JPH05121390A - 酸の除去方法 - Google Patents
酸の除去方法Info
- Publication number
- JPH05121390A JPH05121390A JP3308268A JP30826891A JPH05121390A JP H05121390 A JPH05121390 A JP H05121390A JP 3308268 A JP3308268 A JP 3308268A JP 30826891 A JP30826891 A JP 30826891A JP H05121390 A JPH05121390 A JP H05121390A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- acid
- lump
- steam
- washing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Heat Treatment Of Water, Waste Water Or Sewage (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3308268A JPH05121390A (ja) | 1991-10-29 | 1991-10-29 | 酸の除去方法 |
| US07/967,066 US5346557A (en) | 1991-10-29 | 1992-10-28 | Process for cleaning silicon mass and the recovery of nitric acid |
| KR1019920020055A KR100230979B1 (ko) | 1991-10-29 | 1992-10-29 | 실리콘괴(塊)의 세정방법 |
| DE69217024T DE69217024T2 (de) | 1991-10-29 | 1992-10-29 | Verfahren zur Reinigung einer Siliziummasse |
| EP92118561A EP0548504B1 (de) | 1991-10-29 | 1992-10-29 | Verfahren zur Reinigung einer Siliziummasse |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3308268A JPH05121390A (ja) | 1991-10-29 | 1991-10-29 | 酸の除去方法 |
| JP31148491A JP2949207B2 (ja) | 1991-10-31 | 1991-10-31 | シリコン処理廃液から硝酸を回収、再利用する方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05121390A true JPH05121390A (ja) | 1993-05-18 |
Family
ID=26565475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3308268A Pending JPH05121390A (ja) | 1991-10-29 | 1991-10-29 | 酸の除去方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5346557A (de) |
| EP (1) | EP0548504B1 (de) |
| JP (1) | JPH05121390A (de) |
| KR (1) | KR100230979B1 (de) |
| DE (1) | DE69217024T2 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020153340A1 (ja) | 2019-01-25 | 2020-07-30 | 株式会社トクヤマ | 多結晶シリコン塊状物、その梱包体及びこれらの製造方法 |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996041687A1 (en) * | 1995-06-05 | 1996-12-27 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
| US5846386A (en) * | 1994-01-07 | 1998-12-08 | Startec Ventures, Inc. | On-site ammonia purification for semiconductor manufacture |
| US6350425B2 (en) * | 1994-01-07 | 2002-02-26 | Air Liquide America Corporation | On-site generation of ultra-high-purity buffered-HF and ammonium fluoride |
| US5846387A (en) * | 1994-01-07 | 1998-12-08 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing |
| US5722442A (en) * | 1994-01-07 | 1998-03-03 | Startec Ventures, Inc. | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
| US5496778A (en) * | 1994-01-07 | 1996-03-05 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
| US5785820A (en) * | 1994-01-07 | 1998-07-28 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
| DE19522525A1 (de) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Verfahren und Vorrichtung zum Feinstreinigen von Oberflächen |
| WO1996039265A1 (en) * | 1995-06-05 | 1996-12-12 | Startec Ventures, Inc. | On-site ammonia purification for semiconductor manufacture |
| AU6161996A (en) * | 1995-06-05 | 1996-12-24 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid f or semiconductor processing |
| JP2001527697A (ja) * | 1995-06-05 | 2001-12-25 | スターテック・ベンチャーズ・インコーポレーテッド | 半導体プロセス用超高純度バッファードｈｆのオンサイト生成 |
| AU2862495A (en) * | 1995-06-05 | 1996-12-24 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component m anufacture |
| US6001223A (en) * | 1995-07-07 | 1999-12-14 | Air Liquide America Corporation | On-site ammonia purification for semiconductor manufacture |
| US5753567A (en) * | 1995-08-28 | 1998-05-19 | Memc Electronic Materials, Inc. | Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma |
| US6214173B1 (en) | 1996-06-05 | 2001-04-10 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity nitric acid |
| US5843322A (en) * | 1996-12-23 | 1998-12-01 | Memc Electronic Materials, Inc. | Process for etching N, P, N+ and P+ type slugs and wafers |
| CA2232777C (en) * | 1997-03-24 | 2001-05-15 | Hiroyuki Baba | Method for producing silicon for use in solar cells |
| DE19741465A1 (de) * | 1997-09-19 | 1999-03-25 | Wacker Chemie Gmbh | Polykristallines Silicium |
| SG92720A1 (en) * | 1999-07-14 | 2002-11-19 | Nisso Engineering Co Ltd | Method and apparatus for etching silicon |
| TW511180B (en) * | 2000-07-31 | 2002-11-21 | Mitsubishi Chem Corp | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
| JP4826882B2 (ja) * | 2005-05-18 | 2011-11-30 | 株式会社 アイアイエスマテリアル | スクラップシリコンの選別及び分析方法 |
| DE102006040830A1 (de) * | 2006-08-31 | 2008-03-06 | Wacker Chemie Ag | Verfahren zur Aufarbeitung einer Ätzmischung, die bei der Herstellung von hochreinem Silicium anfällt |
| DE102007031471A1 (de) * | 2007-07-05 | 2009-01-08 | Schott Solar Gmbh | Verfahren zur Aufbereitung von Siliciummaterial |
| DE102007039626A1 (de) * | 2007-08-22 | 2009-02-26 | Wacker Chemie Ag | Verfahren zum Reinigen von polykristallinem Silicium |
| JP4941415B2 (ja) * | 2007-09-04 | 2012-05-30 | 三菱マテリアル株式会社 | クリーンベンチ |
| DE102009054525A1 (de) | 2009-12-10 | 2011-06-16 | Wacker Chemie Ag | Verfahren zur Entfernung von Stickoxiden und Hydrogennitrit aus Säuregemischen |
| DE102010040836A1 (de) | 2010-09-15 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung von Silicium-Dünnstäben |
| DE102010042869A1 (de) | 2010-10-25 | 2012-04-26 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinen Siliciumstäben |
| CN102134077B (zh) * | 2011-01-25 | 2012-09-05 | 云南乾元光能产业有限公司 | 一种湿法提纯多晶硅的方法 |
| CN103215593A (zh) * | 2012-01-19 | 2013-07-24 | 库特勒自动化系统(苏州)有限公司 | 用于处理酸性蚀刻废物体系的回收系统及回收方法 |
| DE102013225146A1 (de) | 2013-12-06 | 2014-04-24 | Wacker Chemie Ag | Verfahren zur Herstellung eines Silicium-Dünnstabs |
| CN107117753A (zh) * | 2016-02-24 | 2017-09-01 | 浙江东氟塑料科技有限公司 | 一种硅太阳能电池制绒废液回收利用的方法 |
| EP3427007B1 (de) * | 2016-03-10 | 2021-11-10 | Defelsko Corporation | Verfahren und system zum testen von oberflächen für kontaminanten |
| US11214892B2 (en) * | 2017-04-24 | 2022-01-04 | Tokuyama Corporation | Method for manufacturing polycrystalline silicon fragment and method for managing surface metal concentration of polycrystalline silicon fragment |
| CN111170320B (zh) * | 2019-12-27 | 2021-01-19 | 苏州晶洲装备科技有限公司 | 一种用于多晶硅制绒废酸液回收利用装置和方法 |
| CN112537814B (zh) * | 2020-12-31 | 2024-07-23 | 江苏电科环保有限公司 | 含氟硝酸废液的处理系统 |
| CN118002544B (zh) * | 2024-02-23 | 2025-11-25 | 江苏鑫华半导体科技股份有限公司 | 一种电子级硅料清洗装置及方法 |
| CN118022959A (zh) * | 2024-03-27 | 2024-05-14 | 新疆大全新能源股份有限公司 | 一种硅料破碎过程中去除磁性物质的工艺 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2992080A (en) * | 1958-07-25 | 1961-07-11 | Gen Electric | Method of improving the purity of silicon |
| US4186032A (en) * | 1976-09-23 | 1980-01-29 | Rca Corp. | Method for cleaning and drying semiconductors |
| US4261791A (en) * | 1979-09-25 | 1981-04-14 | Rca Corporation | Two step method of cleaning silicon wafers |
| DE3129009A1 (de) * | 1981-07-22 | 1983-02-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von fuer solarzellen verwendbarem silizium |
| DE3128979C2 (de) * | 1981-07-22 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium |
| DE3317286A1 (de) * | 1983-05-11 | 1984-11-22 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur reinigung von silicium durch saeureeinwirkung |
| US4695327A (en) * | 1985-06-13 | 1987-09-22 | Purusar Corporation | Surface treatment to remove impurities in microrecesses |
| DE3728693A1 (de) * | 1987-08-27 | 1989-03-09 | Wacker Chemitronic | Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen |
| FR2659956B1 (fr) * | 1990-03-21 | 1992-06-26 | Cogema | Procede de traitement d'une solution aqueuse contenant principalement de l'acide nitrique et de l'acide fluorhydrique. |
-
1991
- 1991-10-29 JP JP3308268A patent/JPH05121390A/ja active Pending
-
1992
- 1992-10-28 US US07/967,066 patent/US5346557A/en not_active Expired - Fee Related
- 1992-10-29 DE DE69217024T patent/DE69217024T2/de not_active Expired - Fee Related
- 1992-10-29 KR KR1019920020055A patent/KR100230979B1/ko not_active Expired - Fee Related
- 1992-10-29 EP EP92118561A patent/EP0548504B1/de not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020153340A1 (ja) | 2019-01-25 | 2020-07-30 | 株式会社トクヤマ | 多結晶シリコン塊状物、その梱包体及びこれらの製造方法 |
| KR20210118837A (ko) | 2019-01-25 | 2021-10-01 | 가부시키가이샤 도쿠야마 | 다결정 실리콘 괴상물, 그의 포장체 및 이들의 제조방법 |
| US12371237B2 (en) | 2019-01-25 | 2025-07-29 | Tokuyama Corporation | Polycrystalline silicon lump, packaging body thereof, and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69217024D1 (de) | 1997-03-06 |
| KR930008193A (ko) | 1993-05-21 |
| EP0548504B1 (de) | 1997-01-22 |
| EP0548504A3 (en) | 1993-12-01 |
| KR100230979B1 (ko) | 1999-11-15 |
| US5346557A (en) | 1994-09-13 |
| EP0548504A2 (de) | 1993-06-30 |
| DE69217024T2 (de) | 1997-08-21 |
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