JPH0514431B2 - - Google Patents
Info
- Publication number
- JPH0514431B2 JPH0514431B2 JP54120251A JP12025179A JPH0514431B2 JP H0514431 B2 JPH0514431 B2 JP H0514431B2 JP 54120251 A JP54120251 A JP 54120251A JP 12025179 A JP12025179 A JP 12025179A JP H0514431 B2 JPH0514431 B2 JP H0514431B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current
- carrier
- emitter
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12025179A JPS5645082A (en) | 1979-09-19 | 1979-09-19 | Low-loss diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12025179A JPS5645082A (en) | 1979-09-19 | 1979-09-19 | Low-loss diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645082A JPS5645082A (en) | 1981-04-24 |
| JPH0514431B2 true JPH0514431B2 (de) | 1993-02-25 |
Family
ID=14781564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12025179A Granted JPS5645082A (en) | 1979-09-19 | 1979-09-19 | Low-loss diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645082A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189679A (ja) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | ダイオ−ド |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5365073A (en) * | 1976-11-24 | 1978-06-10 | Hitachi Ltd | Semiconductor rectifying device |
-
1979
- 1979-09-19 JP JP12025179A patent/JPS5645082A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645082A (en) | 1981-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0216591B2 (de) | ||
| JPH09501270A (ja) | 炭化ケイ素サイリスタ | |
| JP2003318413A (ja) | 高耐圧炭化珪素ダイオードおよびその製造方法 | |
| CN101271926A (zh) | 高效整流器 | |
| JPS6335113B2 (de) | ||
| JP3269625B2 (ja) | 炭化珪素に形成された高速回復高温度整流ダイオード | |
| JPH10511812A (ja) | パッシベーション層を有する半導体デバイス | |
| Fossum et al. | A minority-carrier transport model for polysilicon contacts to silicon bipolar devices, including solar cells | |
| CN105405873A (zh) | 一种半导体器件及其制造方法 | |
| JP2000049363A (ja) | ショットキーダイオード及びその製造方法 | |
| JPS6334630B2 (de) | ||
| JPH08316470A (ja) | 電力用半導体素子 | |
| Jain et al. | Dopant profile analysis of boron in solar grade poly‐and single‐crystalline silicon | |
| US4569118A (en) | Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same | |
| Kamins | A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films | |
| CN113540207A (zh) | 一种基于B掺杂扩散进行寿命控制的辐射加固SiC器件 | |
| GB2191036A (en) | Hot charge-carrier transistors | |
| CN112242449A (zh) | 一种基于SiC衬底沟槽型MPS二极管元胞结构 | |
| JPS58165380A (ja) | 高耐圧半導体装置 | |
| JP3412851B2 (ja) | 高耐圧ショットキー・ダイオード | |
| CN113066856A (zh) | 具有双层外延结构的Trench MOS肖特基整流器件及制造方法 | |
| JP2621854B2 (ja) | 高移動度トランジスタ | |
| JPH08241993A (ja) | パワースイッチングデバイス | |
| JP4802356B2 (ja) | 横型接合型電界効果トランジスタ | |
| JPH07115211A (ja) | ショットキ半導体装置 |