JPS5645082A - Low-loss diode - Google Patents

Low-loss diode

Info

Publication number
JPS5645082A
JPS5645082A JP12025179A JP12025179A JPS5645082A JP S5645082 A JPS5645082 A JP S5645082A JP 12025179 A JP12025179 A JP 12025179A JP 12025179 A JP12025179 A JP 12025179A JP S5645082 A JPS5645082 A JP S5645082A
Authority
JP
Japan
Prior art keywords
type layer
tau
layer
time
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12025179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0514431B2 (de
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12025179A priority Critical patent/JPS5645082A/ja
Publication of JPS5645082A publication Critical patent/JPS5645082A/ja
Publication of JPH0514431B2 publication Critical patent/JPH0514431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Bipolar Transistors (AREA)
JP12025179A 1979-09-19 1979-09-19 Low-loss diode Granted JPS5645082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12025179A JPS5645082A (en) 1979-09-19 1979-09-19 Low-loss diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12025179A JPS5645082A (en) 1979-09-19 1979-09-19 Low-loss diode

Publications (2)

Publication Number Publication Date
JPS5645082A true JPS5645082A (en) 1981-04-24
JPH0514431B2 JPH0514431B2 (de) 1993-02-25

Family

ID=14781564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12025179A Granted JPS5645082A (en) 1979-09-19 1979-09-19 Low-loss diode

Country Status (1)

Country Link
JP (1) JPS5645082A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365073A (en) * 1976-11-24 1978-06-10 Hitachi Ltd Semiconductor rectifying device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365073A (en) * 1976-11-24 1978-06-10 Hitachi Ltd Semiconductor rectifying device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド

Also Published As

Publication number Publication date
JPH0514431B2 (de) 1993-02-25

Similar Documents

Publication Publication Date Title
JPS5742164A (en) Semiconductor device
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS57138174A (en) Semiconductor device
EP0631356A3 (de) Lichtemittierende Halbleitervorrichtung
JPS5654064A (en) Semiconductor device
JPS57111076A (en) Semiconductor light-emitting device
JPS5645081A (en) Low-loss diode
JPS5645087A (en) Semiconductor device
JPS57132370A (en) Low-loss diode
JPS5780769A (en) Semiconductor device
JPS5753928A (en) Compound semiconductor device
JPS52128057A (en) Manufacture of arsenide gallium epitaxial thin layer
JPS5728366A (en) Semiconductor device
JPS55158663A (en) Transistor
JPS5571080A (en) Preparation of electrode for compound semiconductor luminous element
JPS57148384A (en) Luminous surface type semiconductor light-emitting element
JPS57132379A (en) Manufacture of light-emitting semiconductor device
JPS5795663A (en) Semiconductor photo detector and its manufacture
JPS56124265A (en) Semiconductor device
JPS5548990A (en) Semiconductor joining laser forming method
JPS56126980A (en) Semiconductor device and manufacture thereof
JPS56169377A (en) Light semiconductor device
JPS54102880A (en) Semiconductor device
JPS5673481A (en) Gun diode
JPS538574A (en) Lateral thyristor