JPH05198722A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] An object of the present invention is to reduce thermal stress and displacement generated in a solder joint, prevent cracking of the solder, and thereby improve reliability. It is a thing. [Structure] The lead 11 is projected outside the encapsulating resin 6 from a position where the height from the mounting board is higher than the center of the encapsulating resin 6, and the height of the external lead is measured without increasing the height of the entire device. Was made larger.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount type semiconductor device, and more particularly to improvement of leads thereof.

[0002]

29 is a sectional view showing a mounting state of an example of a conventional surface mount type semiconductor device (Small Outlet Package), and FIG. 30 is a side view of the semiconductor device of FIG. In the figure, on the die pad 1,
The semiconductor element 3 is mounted via the die bond material 2. A gull-wing type lead 5 is electrically connected to the electrode of the semiconductor element 3 via a gold wire 4, respectively.

A part of the die pad 1, the semiconductor element 3, the gold wire 4 and the lead 5 is resin-sealed with a sealing resin 6. The lead 5 is composed of an internal lead located inside the sealing resin and an external lead outside the sealing resin, and a soldering portion 5a is provided at the tip of the external lead. This semiconductor device is mounted on the mounting substrate 8 by ball-bonding the soldered portion 5 a to the mounting substrate 8 with the solder 7.

In the conventional semiconductor device as described above, the overall height dimension H and the height at which the lead 5 protrudes from the sealing resin (exterior mold) 6, that is, the height dimension h of the external lead. Is H> (H ₁ + H ₂ + H ₃ )> h. Further, if the difference between the thicknesses H ₁ and H ₃ of the upper and lower sealing resins 6 of the semiconductor element 3 is large, the package body (resin sealing portion) is deformed (warped), so that H is inevitably generated.
It is assumed that ₁ ≈ H ₃ . Furthermore, the die pad sinking dimension H ₄
Is adjusted so that h≈ (H ₁ + H ₂ + H ₃ ) / 2.

Next, FIG. 31 shows another example of a conventional semiconductor device (Small Outlet Package Wi).
FIG. 32 is a side view showing (th I Lead), and FIG. 32 is another example (Small Outlet Package)
It is a side view showing a with J Lead, and has I-shaped and J-shaped leads 9 and 10, respectively. Then, soldering portions 9a and 10a are provided at the tip portions of the leads 9 and 10, respectively.

By the way, when the size of the package body increases due to the diversification of semiconductor devices, the coefficient of thermal expansion of the package body also changes, and the difference from the coefficient of thermal expansion of the mounting substrate 8 becomes large, and excessive heat is applied to the solder joint. Stress is generated. With respect to the thermal stress σ (kgf / mm ² ) and displacement of such a solder joint, when the given temperature difference is ΔT, the package body size L ₁ (mm) and the thermal expansion coefficient α ₁ (1
/ ° C) and the thermal expansion coefficient α ₂ of the mounting substrate 8 (α ₂ −
α ₁ ) is taken as a variable and increases in proportion to L ₁ × (α ₂ −α ₁ ) × ΔT.

Further, the thermal stress σ and the displacement are related to the height dimension h of the external lead, the shape I and the elastic coefficient E. To alleviate the thermal stress σ and the displacement, h ³ / (E × I)
Needs to be small.

[0008]

In the conventional semiconductor device configured as described above, the submerged dimension H ₄ of the die pad 1 is equal to the plate thickness of the leads 5, 9 and 10 or the semiconductor element 3.
Since it was decided to be about 0.2 to 0.25 mm which is half of the thickness of the external lead, the height h of the external lead is (H ₁ + H ₂ + H ₃ ).
It is almost decided with / 2. Therefore, when the dimension h cannot be sufficiently taken and the package body dimension L ₁ is increased, the thermal stress σ and the displacement generated in the solder joint are increased, and the solder 7 is cracked. was there. Further, if the dimension h of the conventional apparatus is simply increased, the height dimension H of the entire apparatus also increases.

The present invention has been made to solve the above-mentioned problems, and it is possible to increase the height of the external lead without increasing the height of the entire device. An object of the present invention is to obtain a semiconductor device capable of reducing thermal stress and displacement generated at a solder joint, preventing generation of cracks in solder, and consequently improving reliability.

[0010]

According to a first aspect of the present invention, a semiconductor device has a lead projecting outside the sealing resin from a position where the height from the mounting substrate is higher than the center of the sealing resin.

According to another aspect of the semiconductor device of the present invention, the lead is projected outside the sealing resin from a position where the height from the mounting substrate is higher than the center of the sealing resin, and the soldered portion is on the sealing resin side. It is a bent one.

According to another aspect of the semiconductor device of the present invention, the lead is projected outside the sealing resin from a position where the height from the mounting substrate is lower than the center of the sealing resin, and the protruding external lead is separated from the mounting substrate. After being bent to the mounting board side, the soldered portion is bent to the sealing resin side.

[0013]

According to the first aspect of the invention, the height of the external lead is increased by projecting the lead from the higher position of the sealing resin, and the thermal stress generated in the solder joint is reduced.

According to the second aspect of the present invention, the height of the external lead is increased by projecting the lead from a higher position of the sealing resin, or the bent portion is bent toward the sealing resin, thereby soldering. Reduce the joint spacing,
These reduce the thermal stress generated in the solder joint.

According to the third aspect of the present invention, the leads are bent in a direction away from the mounting board and then to the mounting board side, thereby increasing the height of the external leads.
By bending the soldered portion toward the sealing resin side, the solder joint interval is reduced, thereby reducing the thermal stress generated in the solder joint.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. In each figure, the same or corresponding parts as those in FIG. 29 are designated by the same reference numerals, and the description thereof will be omitted. Example 1. FIG. 1 is a sectional view of a semiconductor device of a first embodiment according to the inventions of claims 1 and 2. In the figure, a lead 11 is electrically connected to an electrode of the semiconductor device 3 via a gold wire 4. The lead 11 is bent in a crank shape inside the sealing resin 6 (internal lead), and thereby protrudes from the highest position in the height direction from the mounting substrate 8 (FIG. 29) to the outside of the sealing resin 6. .. In addition, a portion of the lead 11 protruding outside the sealing resin 6, that is, a tip portion of the external lead, has a soldering portion 11 bent toward the sealing resin 6 side.
a is provided.

FIG. 2 is an explanatory view for explaining a difference in thermal stress generated between the lead 11 of FIG. 1 and the conventional lead 5. In the figure, assuming that the height of the external lead of the conventional example is h ₁ and the height of the external lead of Example 1 is h ₂ ,
H ₁ <h ₂ due to the difference in height of the protruding position. Also, h ₂ is the lead 1 from the height H of the entire device (Fig. 29).
It is reduced by half the thickness of 1.

In FIG. 2, when the point a of the lead 5 is displaced in the direction of the arrow by L ₁ × (α ₂ -α ₁ ) × ΔT due to the difference in thermal expansion coefficient, the point b of the lead 5 is displaced by δ _1. To do.
At this time, a load equivalent to that when the load P = 3EIδ ₁ / h ₁ ³ is loaded in the point b is generated in the solder joints c.

On the other hand, in the lead 11 of the first embodiment,
If the point d is displaced by the same load P in the arrow direction,
The displacement amount δ _{2 at the} point e at this time is represented by δ ₂ = Ph ₂ ³ / 3EI, and is larger than δ ₁ in proportion to the cube of the difference of h.
On the contrary, in order to bend the point d of the lead 5 and the point e of the lead 11 by δ, the load P = 3EIδ / h ³ is required.
Therefore, when h increases, the load P required to bend the same δ decreases in inverse proportion to h ³ , and the load of the solder joint, which is a reaction of the load P, decreases.

Further, in FIG. 2, when the one-end fixed beam fixed at the point c is considered as a first-order approximation model, the displacement amount δ at the point e due to the external force P depends on the dimension, shape I and material E of the beam. δ = Ph ³ / 3EI, this equation is
It can be transformed to (3EI / h ³ ) δ. Therefore, 3EI / h ³
Gives the spring constant of the fixed beam. This spring constant is
It decreases in inverse proportion to h ³ .

In the conventional semiconductor device, the spring constant is increased because h is reduced in order to reduce the height dimension H of the entire device. However, according to the invention of claim 1, as shown in FIG. Since h ₁ <h ₂ , the spring constant becomes small. Here, if h ₂ ≈2h ₁ , the spring constant after improvement can be reduced to about 1/8 of the conventional value. Since the relation between the spring constant k, the displacement amount δ and the load P is P = kδ, if the displacement amount δ caused by the difference in the coefficient of thermal expansion between the package body and the mounting substrate is the same, the spring constant k is large. The load P becomes smaller as it becomes larger. Then, the reaction of the load P generated at the solder joint is also reduced.

As described above, in the semiconductor device of FIG. 1, the height h of the external lead is larger than that of the conventional example, so that when the protruding portion of the lead 11 from the sealing resin 6 is displaced, the solder The load on the joint is reduced. As a result, the thermal stress and displacement generated at the solder joint are reduced, and cracking of the solder 7 (FIG. 29) is prevented. Moreover, if the standoff is increased to obtain such an effect, the height dimension H of the entire apparatus increases, but the height dimension H does not increase in the first embodiment.

Further, the difference in the amount of expansion due to the difference in the coefficient of linear expansion between the package body and the mounting substrate 8 when mounted on the mounting substrate 8 is L when the soldering portion interval is L ₂ as shown in FIG. _It is proportional to ₂ × (α ₂ −α ₁ ) × ΔT. On the other hand, in the semiconductor device of Example 1 described above, the soldering portion 11a is bent toward the sealing resin 6 side, so
₂ is smaller. Therefore, the thermal stress and displacement of the solder joint are further reduced.

Example 2. FIG. 3 is a sectional view of a semiconductor device according to a second embodiment of the invention of claims 1 and 2. As shown in this figure, the same effect as that of the first embodiment can be obtained when the lead frame with the die pad submerged is used.

Example 3. FIG. 4 is a sectional view of a semiconductor device of a third embodiment according to the invention of claim 1, and the tip portion of the lead 11 does not necessarily have to be bent toward the sealing resin 6 side. As shown in FIG. 4, even in the I-shaped soldering portion 11b extending at a right angle to the mounting board 8, by projecting the lead 11 from a high position on the side surface of the sealing resin 6, the thermal stress of the solder joint portion is increased. And deformation can be sufficiently reduced.

Example 4. FIG. 5 is a sectional view of a semiconductor device according to a fourth embodiment of the invention of claims 1 and 2. As shown in this figure, a J-shaped deformed soldering portion 11c may be provided at the tip of the lead 11.

Example 5. FIG. 6 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the invention of claims 1 and 2, and a J-shaped soldering portion 11d reaching the lower part of the sealing resin 6 is provided at the tip of the lead 11. It may be provided. By making the leads 11 J-shaped as in these Embodiments 4 and 5, the height dimension of the entire device is increased to some extent as compared with that of FIG. 1, but the thermal stress of the solder joint is the same as that of the conventional J-shape. Can be significantly reduced than

Example 6. FIG. 7 is a sectional view of a semiconductor device according to a sixth embodiment of the invention of claims 1 and 2. As shown in the drawing, the die pad 1 and the leads 11 may be molded so that one ends thereof are located near the bottom surface of the sealing resin 6, and the height dimension of the entire device can be reduced.

Example 7. FIG. 8 is a sectional view of a semiconductor device according to a seventh embodiment of the present invention. In the device of this figure, the inner lead of the lead 11 is molded so as to be positioned near the bottom surface and the side surface of the sealing resin 6, and not only the height dimension of the entire device but also the length dimension can be reduced.

Example 8. 9 is a sectional view of a semiconductor device according to an eighth embodiment of the present invention. In the figure, the lead 12 is of a gull-wing type similar to the conventional example, and the inner lead does not have a bent portion. However, by increasing the sinking amount H ₄ of the die pad 1, the leads 12 can be moved from the high position on the side surface of the sealing resin 6 to the sealing resin 6
It sticks out. One end of the lead 12 is connected to the electrode of the semiconductor blocking 3 via the gold wire 4 in the sealing resin 6,
A soldering portion 12a is provided at the other end of the lead 12.

Also in such a semiconductor device, since the height of the external lead is larger than that in FIG. 29, the thermal stress and displacement of the solder joint are reduced, and the solder 7 is cracked. Is prevented.

Example 9. FIG. 10 shows claims 1 and 2.
Is a cross-sectional view of a semiconductor device of Example 9 according to the invention of FIG. As shown in this figure, the other end of the lead 12 may be bent toward the sealing resin 6 side to form the soldered portion 12b, and as described above, the stress at the solder joint portion is further reduced.

Example 10. FIG. 11 is a sectional view of a semiconductor device according to a tenth embodiment of the invention of claim 1, in which a lead 12 having a linear inner lead as in FIG. 9 is attached to an I-shaped soldering portion 12c as in FIG. May be provided.

Example 11. FIG. 12 is a cross-sectional view of a semiconductor device according to an eleventh embodiment of the invention of claims 1 and 2, wherein a lead 12 having a linear inner lead is formed on a soldered portion obtained by modifying the J-shape as in FIG. 12d may be provided.

Example 12. 13 is a cross-sectional view of a semiconductor device according to a twelfth embodiment of the invention of claim 1 and claim 2, wherein the internal lead is a straight lead 12 and, like FIG. J-shaped soldering part 12e that wraps around
May be provided.

Example 13 FIG. 14 is a sectional view of a semiconductor device according to a thirteenth embodiment of the invention of claims 1 and 2. In the thirteenth embodiment, the leads 12 are arranged in the same manner as in FIG. 10, but the die pad 1 and the semiconductor element 3 are arranged.
Are arranged upside down. Also in such a semiconductor device, since the height of the external lead is larger than that of the conventional example and the soldering portion 12b is bent toward the sealing resin 6, the thermal stress of the solder joint portion is reduced.

Example 14 FIG. 15 is a sectional view of a semiconductor device according to a fourteenth embodiment of the invention of claims 1 and 2. In this device, the die pad 1 and the leads 12 are arranged on the uppermost part of the sealing resin 6 in order to further increase the height dimension of the external leads, and the thermal stress can be reduced as compared with that in FIG.

Example 15. 16 is a sectional view of a semiconductor device according to a fifteenth embodiment of the present invention. As shown in the figure, the die pad 1, the semiconductor element 3 and the lead 12 may be arranged in the same manner as in FIG. 14, and the lead 12 may be provided with an I-shaped soldering portion 12c similar to that in FIG.

Example 16. FIG. 17 is a sectional view of a semiconductor device according to a sixteenth embodiment of the present invention. As shown in the drawing, the die pad 1, the semiconductor element 3 and the leads 12 may be arranged in the same manner as in FIG. 15, and the leads 12 may be provided with the I-shaped soldering portions 12c similar to those in FIG.

Example 17 FIG. 18 is a cross-sectional view of a semiconductor device according to a seventeenth embodiment of the invention of claims 1 and 2, and in the arrangement of FIG. 14, a J-shaped soldering portion 12 similar to that of FIG.
It may be e.

Example 18. FIG. 19 is a sectional view of a semiconductor device according to an eighteenth embodiment of the invention of claims 1 and 2, and in the arrangement of FIG. 15, a J-shaped soldering portion 12 similar to that of FIG.
It may be e.

Example 19 20 is a cross-sectional view of a semiconductor device according to a nineteenth embodiment of the invention of claims 1 and 2, and the same J-shaped deformed soldering portion 12d as that of FIG. 12 may be used in the arrangement of FIG.

Example 20. 21 is a cross-sectional view of a semiconductor device according to a twentieth embodiment of the invention of claims 1 and 2, and the same soldering portion 12d as the one shown in FIG.

Example 21. 22 is a cross-sectional view of a semiconductor device of Example 21 according to the first and second aspects of the invention. In each of the above embodiments, the semiconductor element 3 and the leads 11 and 12 are electrically connected by thermocompression bonding or ultrasonic thermocompression bonding using the gold wire 4, but as shown in FIG.
You may connect by the TAB method using 13.

Example 22. 23 is a sectional view of a semiconductor device according to a twenty-second embodiment of the present invention. When the TAB method is used, as shown in this figure, the internal lead may be bent to use the lead 14 protruding from the high position of the sealing resin 6 to the outside of the sealing resin 6.

22 shows the soldering portion 12a bent to the sealing resin 6 side, and FIG. 23 shows the gull wing type soldering portion 14a, the shape of the soldering portion is also in the TAB method. The shape is not limited and may be I-shape or J-shape.

Example 23. 24 is a sectional view of a semiconductor device according to a twenty-third embodiment of the present invention. As shown in this figure,
It may be connected to the electrode (connection pad portion) of the semiconductor element 3 by the ball bond joint 15, and the same effect can be obtained if the position where the lead 12 projects from the sealing resin 6 can be increased.

Example 24. 25 is a cross-sectional view of a semiconductor device according to a twenty-fourth embodiment of the invention of claim 1 and claim 2, wherein the positions of the semiconductor element 3 and the lead 12 are higher than those in FIG. It may be larger.

Even in the case of the device shown in FIGS. 24 and 25, the shape of the soldering portion is not particularly limited.

Example 25. FIG. 26 is a sectional view of a semiconductor device according to a 25th embodiment of the present invention. In the figure, the leads 21 project from the lower position of the sealing resin 6 to the outside of the sealing resin 6 as in the conventional example, but are mounted after the external leads are bent in a direction away from the mounting substrate 8 (FIG. 29). It is bent to the board 8 side and has a soldering part 21.
a is bent toward the sealing resin 6 side.

Such a semiconductor device is manufactured by the same method as the conventional method until the step of exterior molding.
Keep the length of the external lead of the item as long as possible and fold it into the shape shown in the figure. As a result, the same effect can be obtained as when the height of the external leads is set to approximately (h ₃ + h ₄ ).
In addition, by bending the soldered portion 21a toward the sealing resin 6 side, the solder joint interval is reduced. These reduce the thermal stress and displacement of the solder joint,
This prevents the solder 7 (FIG. 29) from cracking.

FIG. 27 is a modeled explanatory view for explaining the action of the lead 21 of FIG. Lead 21 can be approximated to the co shaped noodles as shown, the displacement δ is substantially ^{_{(Ph 3 2 / EI) ×}} (2h 3/3 + 2a). The spring constant can be smaller than approximately ^{_{EI / {h 3 2 (2h}} 3/3 + 2a)} next, in FIG.

Example 26. 28 is a sectional view of a semiconductor device according to a 26th embodiment of the present invention. As shown in this figure, the die pad 1 and the lead 21 may be arranged at the lowermost portion in the sealing resin 6 by using the lead 21 having the same shape as in FIG.

The increase of the die pad sinking amount H ₄ can be realized by using a lead frame having a Peano curve die pad and a Peano curve lead as shown in the specification of US Pat. No. 5021865. is there. Regarding the Peano curve, for example, “Fractal” (published by Asakura Shoten in 1987), page 8, “Introduction to Analysis (Revised 3rd Edition)” (published by Iwanami Shoten in 1969) Appendix II and “Iwanami Mathematics Dictionary 3rd Edition” (1985) (Iwanami Shoten)
The explanation is also described on page 241 and the like.

[0055]

As described above, in the semiconductor device according to the first aspect of the invention, the lead is projected outside the sealing resin from a position where the height from the mounting substrate is higher than the center of the sealing resin.
The height of the external lead can be increased without increasing the height of the entire device, which can reduce the thermal stress and displacement generated in the solder joint.
It is possible to prevent cracks in the solder,
As a result, there is an effect that the reliability can be improved.

Further, in the semiconductor device of the invention of claim 2, the lead is projected to the outside of the sealing resin from a position where the height from the mounting substrate is higher than the center of the sealing resin, and the soldered portion is on the sealing resin side. Since it is bent in the above manner, the thermal stress and displacement generated in the solder joint can be further reduced as compared with the invention of claim 1, and the reliability can be further enhanced.

Further, the semiconductor device of the invention of claim 3 is
The lead is projected outside the sealing resin from a position where the height from the mounting board is lower than the center of the sealing resin, the protruding external lead is bent in the direction away from the mounting board, and then bent to the mounting board side, and the soldered part Is bent toward the sealing resin side, the thermal stress and the displacement generated in the solder joint can be further reduced as compared with the invention of claim 2, and the reliability can be further enhanced.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device of a first embodiment according to the first and second aspects of the invention.

FIG. 2 is an explanatory diagram for explaining a difference in thermal stress generated in a lead of FIG. 1 and a conventional example.

FIG. 3 is a cross-sectional view of a semiconductor device of a second embodiment according to the invention of claims 1 and 2.

FIG. 4 is a sectional view of a semiconductor device of a third embodiment according to the invention of claim 1.

FIG. 5 is a sectional view of a semiconductor device according to a fourth embodiment of the invention of claims 1 and 2;

FIG. 6 is a sectional view of a semiconductor device according to a fifth embodiment of the invention of claims 1 and 2.

FIG. 7 is a sectional view of a semiconductor device according to a sixth embodiment of the invention of claims 1 and 2.

FIG. 8 is a sectional view of a semiconductor device according to a seventh embodiment of the invention of claims 1 and 2.

FIG. 9 is a sectional view of a semiconductor device of an eighth embodiment according to the invention of claim 1.

FIG. 10 is a ninth embodiment according to the inventions of claims 1 and 2;
3 is a cross-sectional view of the semiconductor device of FIG.

FIG. 11 is a sectional view of a semiconductor device according to a tenth embodiment of the invention of claim 1.

FIG. 12 is a first embodiment according to the invention of claims 1 and 2;
2 is a sectional view of the semiconductor device of FIG.

FIG. 13 is a first embodiment according to the inventions of claims 1 and 2;
It is sectional drawing of the semiconductor device of 2.

FIG. 14 is a first embodiment according to the inventions of claims 1 and 2;
It is sectional drawing of the semiconductor device of FIG.

FIG. 15 is a first embodiment according to the inventions of claims 1 and 2;
4 is a cross-sectional view of the semiconductor device of FIG.

FIG. 16 is a sectional view of a semiconductor device of Example 15 according to the invention of claim 1.

FIG. 17 is a sectional view of a semiconductor device of Example 16 according to the invention of claim 1.

FIG. 18 is a first embodiment according to the invention of claims 1 and 2;
It is sectional drawing of the semiconductor device of 7.

FIG. 19 is a first embodiment according to the invention of claims 1 and 2;
8 is a sectional view of the semiconductor device of FIG.

20 is a first embodiment according to the invention of claim 1 and claim 2;
It is sectional drawing of the semiconductor device of 9.

FIG. 21 is a second embodiment according to the invention of claims 1 and 2;
It is sectional drawing of the semiconductor device of No. 0.

FIG. 22 is a second embodiment according to the invention of claims 1 and 2;
2 is a sectional view of the semiconductor device of FIG.

FIG. 23 is a cross-sectional view of a semiconductor device of Example 22 according to the invention of claim 1.

FIG. 24 is a second embodiment according to the invention of claims 1 and 2;
It is sectional drawing of the semiconductor device of FIG.

FIG. 25 is a second embodiment according to the invention of claims 1 and 2;
4 is a cross-sectional view of the semiconductor device of FIG.

FIG. 26 is a sectional view of a semiconductor device according to a twenty-fifth embodiment of the present invention.

FIG. 27 is a modeled explanatory diagram for explaining the action of the lead of FIG. 26.

FIG. 28 is a sectional view of a semiconductor device of Example 26 according to the invention of claim 3;

FIG. 29 is a cross-sectional view showing a mounted state of an example of a conventional semiconductor device.

30 is a side view of the device of FIG. 29. FIG.

FIG. 31 is a side view showing another example of the conventional semiconductor device.

FIG. 32 is a side view showing still another example of the conventional semiconductor device.

[Explanation of symbols]

 3 Semiconductor element 6 Sealing resin 8 Mounting board 11 Lead 11a Soldering part 11c Soldering part 11d Soldering part 12 Lead 12b Soldering part 12d Soldering part 12e Soldering part 14 Lead 21 Lead 21a Soldering part

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[Procedure amendment]

[Submission date] July 9, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction content]

Further, the thermal stress σ and the displacement are related to the height dimension h of the external lead, the second moment of area I (mm ⁴ ) and the elastic coefficient E, and in order to reduce the thermal stress σ and the displacement. , H ³ / (E × I) must be reduced.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

[Correction content]

Further, in FIG. 2, when the one-end fixed beam fixed at the point c is considered as a first-order approximation model, the displacement amount δ at the point e due to the external force P is determined by the dimension of the beam, the second moment of area I and the material. It is given by E as δ = Ph ³ / 3EI, but this equation can be transformed into P = (3EI / h ³ ) δ. Therefore, 3EI / h ³ gives the spring constant of the one-end fixed beam. This spring constant decreases in inverse proportion to h ³ .

[Procedure 3]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction content]

In the conventional semiconductor device, h is made small in order to make the height H of the entire device small, so the above spring constant becomes large. However, in the invention of claim 1, as shown in FIG. Since h ₁ <h ₂ , the spring constant becomes small. Here, if h ₂ ≈2h ₁ , the spring constant after improvement can be reduced to about 1/8 of the conventional value. Since the relation between the spring constant k, the displacement amount δ and the load P is P = kδ, if the displacement amount δ caused by the difference in the coefficient of thermal expansion between the package body and the mounting substrate is the same, the spring constant k is small.
The load P decreases as the temperature decreases. Then, the reaction of the load P generated at the solder joint is also small.

Claims (3)

[Claims] 1. A semiconductor element which is resin-sealed, and a lead whose one end is electrically connected to the semiconductor element and whose other end projects from a side of the sealing resin and is soldered onto a mounting substrate. In a surface-mounting type semiconductor device comprising: a semiconductor device, wherein the lead projects outside the sealing resin from a position where a height from the mounting substrate is higher than a center of the sealing resin. apparatus. 2. A resin element-sealed semiconductor element, and a lead whose one end is electrically connected to the semiconductor element and whose other end projects from a side portion of the sealing resin and is soldered onto a mounting substrate. In the surface-mounting type semiconductor device including, the lead projects outside the sealing resin from a position where the height from the mounting substrate is higher than the center of the sealing resin, and the other end portion The semiconductor device according to claim 1, wherein the soldering portion of is bent to the sealing resin side. 3. A resin-sealed semiconductor element, and a lead whose one end is electrically connected to the semiconductor element and whose other end projects from a side of the sealing resin and is soldered onto a mounting substrate. In a surface-mounting type semiconductor device comprising and, the lead projects outside the sealing resin from a position where the height from the mounting substrate is lower than the center of the sealing resin,
A semiconductor device, which is bent in a direction away from the mounting board and then bent toward the mounting board, and a soldering portion at the other end is bent toward the sealing resin.