JPH052129B2 - - Google Patents

Info

Publication number: JPH052129B2
Authority: JP; Japan
Prior art keywords: electrode; liquid crystal; display device; flc; alignment
Prior art date: 1985-05-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP60117350A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61273523A (ja

Inventor

Shunpei Yamazaki

Takashi Inushima

Akira Mase

Toshimitsu Konuma

Mitsunori Sakama

Toshiji Hamaya

Minoru Myazaki

Kohei Okitsu

Toshiji Yamaguchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-05-29

Filing date

1985-05-29

Publication date

1993-01-11

1985-05-29 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

1985-05-29 Priority to JP60117350A priority Critical patent/JPS61273523A/ja

1986-12-03 Publication of JPS61273523A publication Critical patent/JPS61273523A/ja

1993-01-11 Publication of JPH052129B2 publication Critical patent/JPH052129B2/ja

Status Granted legal-status Critical Current

Links

239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 32
239000004973 liquid crystal related substance Substances 0.000 claims description 19
239000000758 substrate Substances 0.000 claims description 13
239000011159 matrix material Substances 0.000 claims description 9
239000002131 composite material Substances 0.000 claims description 5
239000004020 conductor Substances 0.000 claims description 4
229910010272 inorganic material Inorganic materials 0.000 claims description 4
239000011147 inorganic material Substances 0.000 claims description 3
239000012212 insulator Substances 0.000 claims description 3
239000011368 organic material Substances 0.000 claims description 2
238000000034 method Methods 0.000 description 25
239000004065 semiconductor Substances 0.000 description 10
239000010408 film Substances 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 8
239000011521 glass Substances 0.000 description 6
238000005566 electron beam evaporation Methods 0.000 description 5
239000004372 Polyvinyl alcohol Substances 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
230000006870 function Effects 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
230000002093 peripheral effect Effects 0.000 description 3
229920002239 polyacrylonitrile Polymers 0.000 description 3
229920001721 polyimide Polymers 0.000 description 3
239000009719 polyimide resin Substances 0.000 description 3
229920002451 polyvinyl alcohol Polymers 0.000 description 3
238000001894 space-charge-limited current method Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
230000002457 bidirectional effect Effects 0.000 description 2
230000005540 biological transmission Effects 0.000 description 2
229910052804 chromium Inorganic materials 0.000 description 2
239000011651 chromium Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
238000010586 diagram Methods 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
QPJVMBTYPHYUOC-UHFFFAOYSA-N Methyl benzoate Natural products COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
239000004988 Nematic liquid crystal Substances 0.000 description 1
239000004677 Nylon Substances 0.000 description 1
101100446681 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FLC3 gene Proteins 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000003086 colorant Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000001017 electron-beam sputter deposition Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000005621 ferroelectricity Effects 0.000 description 1
230000005669 field effect Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
150000002484 inorganic compounds Chemical class 0.000 description 1
238000003475 lamination Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
229910001635 magnesium fluoride Inorganic materials 0.000 description 1
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
239000000395 magnesium oxide Substances 0.000 description 1
AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
239000000463 material Substances 0.000 description 1
230000003446 memory effect Effects 0.000 description 1
230000006386 memory function Effects 0.000 description 1
229940095102 methyl benzoate Drugs 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
229920001778 nylon Polymers 0.000 description 1
-1 octyl oxy, benzylidene amino methyl Chemical group 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
150000002894 organic compounds Chemical class 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
229920005989 resin Polymers 0.000 description 1
239000011347 resin Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
238000002834 transmittance Methods 0.000 description 1

Landscapes

Liquid Crystal (AREA)

JP60117350A 1985-05-29 1985-05-29 液晶表示装置 Granted JPS61273523A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60117350A JPS61273523A (ja)	1985-05-29	1985-05-29	液晶表示装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60117350A JPS61273523A (ja)	1985-05-29	1985-05-29	液晶表示装置

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP33904393A Division JPH0772778B2 (ja)	1993-12-03	1993-12-03	液晶表示装置

Publications (2)

Publication Number	Publication Date
JPS61273523A JPS61273523A (ja)	1986-12-03
JPH052129B2 true JPH052129B2 (ko)	1993-01-11

Family

ID=14709514

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60117350A Granted JPS61273523A (ja)	1985-05-29	1985-05-29	液晶表示装置

Country Status (1)

Country	Link
JP (1)	JPS61273523A (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0341420A (ja) *	1989-07-07	1991-02-21	Seiko Epson Corp	Ｍｉｍ液晶電気光学装置およびその製造方法
JPH06289351A (ja) *	1992-03-04	1994-10-18	Shunsuke Kobayashi	液晶表示装置の製造方法と液晶表示装置
JPH06289359A (ja) *	1992-03-04	1994-10-18	Shunsuke Kobayashi	液晶表示装置の製造方法
JP2990233B2 (ja) *	1992-07-03	1999-12-13	株式会社半導体エネルギー研究所	液晶電気光学装置
JP3080285B2 (ja) *	1993-05-20	2000-08-21	株式会社半導体エネルギー研究所	液晶電気光学装置
JPH07175089A (ja) *	1994-12-26	1995-07-14	Semiconductor Energy Lab Co Ltd	液晶表示装置

1985
- 1985-05-29 JP JP60117350A patent/JPS61273523A/ja active Granted

Also Published As

Publication number	Publication date
JPS61273523A (ja)	1986-12-03

Legal Events

Date	Code	Title	Description
2005-01-11	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-05-29	EXPY	Cancellation because of completion of term

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JPS61273523A (ja)	1986-12-03	液晶表示装置
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