JPH0527274B2 - - Google Patents

Info

Publication number
JPH0527274B2
JPH0527274B2 JP59084584A JP8458484A JPH0527274B2 JP H0527274 B2 JPH0527274 B2 JP H0527274B2 JP 59084584 A JP59084584 A JP 59084584A JP 8458484 A JP8458484 A JP 8458484A JP H0527274 B2 JPH0527274 B2 JP H0527274B2
Authority
JP
Japan
Prior art keywords
channel
oxide film
region
drain
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59084584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60227474A (ja
Inventor
Hiroshi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59084584A priority Critical patent/JPS60227474A/ja
Publication of JPS60227474A publication Critical patent/JPS60227474A/ja
Publication of JPH0527274B2 publication Critical patent/JPH0527274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59084584A 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法 Granted JPS60227474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084584A JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084584A JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60227474A JPS60227474A (ja) 1985-11-12
JPH0527274B2 true JPH0527274B2 (2) 1993-04-20

Family

ID=13834719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084584A Granted JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60227474A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587261U (ja) * 1992-04-28 1993-11-26 日産ディーゼル工業株式会社 可変レゾネータ装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060199A (ja) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
DE102009006885B4 (de) 2009-01-30 2011-09-22 Advanced Micro Devices, Inc. Verfahren zum Erzeugen einer abgestuften Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen und Halbleiterbauelemente

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587261U (ja) * 1992-04-28 1993-11-26 日産ディーゼル工業株式会社 可変レゾネータ装置

Also Published As

Publication number Publication date
JPS60227474A (ja) 1985-11-12

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