JPS60227474A - Ｍｏｓトランジスタの製造方法 - Google Patents

Ｍｏｓトランジスタの製造方法

Info

Publication number
JPS60227474A
JPS60227474A JP59084584A JP8458484A JPS60227474A JP S60227474 A JPS60227474 A JP S60227474A JP 59084584 A JP59084584 A JP 59084584A JP 8458484 A JP8458484 A JP 8458484A JP S60227474 A JPS60227474 A JP S60227474A
Authority
JP
Japan
Prior art keywords
channel
oxide film
region
drain
dirt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59084584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527274B2 (2
Inventor
Hiroshi Matsumoto
比呂志 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59084584A priority Critical patent/JPS60227474A/ja
Publication of JPS60227474A publication Critical patent/JPS60227474A/ja
Publication of JPH0527274B2 publication Critical patent/JPH0527274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59084584A 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法 Granted JPS60227474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084584A JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084584A JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60227474A true JPS60227474A (ja) 1985-11-12
JPH0527274B2 JPH0527274B2 (2) 1993-04-20

Family

ID=13834719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084584A Granted JPS60227474A (ja) 1984-04-26 1984-04-26 Ｍｏｓトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60227474A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060199A (ja) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
CN102365714A (zh) * 2009-01-30 2012-02-29 先进微装置公司 用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587261U (ja) * 1992-04-28 1993-11-26 日産ディーゼル工業株式会社 可変レゾネータ装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060199A (ja) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
CN102365714A (zh) * 2009-01-30 2012-02-29 先进微装置公司 用于具有缩小的栅极电极间距的非对称晶体管的梯度阱注入
JP2012516556A (ja) * 2009-01-30 2012-07-19 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 減少させられたゲート電極ピッチを有する非対称トランジスタのための段階的なウエル注入
US9449826B2 (en) 2009-01-30 2016-09-20 Advanced Micro Devices, Inc. Graded well implantation for asymmetric transistors having reduced gate electrode pitches

Also Published As

Publication number Publication date
JPH0527274B2 (2) 1993-04-20

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