JPH0529143A - Soft magnetic thin film - Google Patents
Soft magnetic thin filmInfo
- Publication number
- JPH0529143A JPH0529143A JP20369691A JP20369691A JPH0529143A JP H0529143 A JPH0529143 A JP H0529143A JP 20369691 A JP20369691 A JP 20369691A JP 20369691 A JP20369691 A JP 20369691A JP H0529143 A JPH0529143 A JP H0529143A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- magnetic thin
- composition
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 126
- 239000010409 thin film Substances 0.000 title claims abstract description 99
- 239000000203 mixture Substances 0.000 claims abstract description 47
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 10
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 21
- 229910052720 vanadium Inorganic materials 0.000 claims description 17
- 229910052748 manganese Inorganic materials 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- 229910007744 Zr—N Inorganic materials 0.000 abstract description 15
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- 230000004907 flux Effects 0.000 abstract description 11
- 230000035699 permeability Effects 0.000 abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005389 magnetism Effects 0.000 description 5
- 229910000702 sendust Inorganic materials 0.000 description 5
- 239000011162 core material Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 229910020641 Co Zr Inorganic materials 0.000 description 1
- 229910020520 Co—Zr Inorganic materials 0.000 description 1
- -1 T i Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/131—Amorphous metallic alloys, e.g. glassy metals containing iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高飽和磁束密度と高周
波透磁率を持ち、高密度記録再生用磁気ヘッドのコア材
料等に好適な軟磁性薄膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a soft magnetic thin film having a high saturation magnetic flux density and a high frequency magnetic permeability, which is suitable as a core material of a magnetic head for high density recording and reproduction.
【０００２】[0002]
【発明の背景】例えばオーディオテープレコーダやＶＴ
Ｒ（ビデオテープレコーダ）等の磁気記録再生装置にお
いては、記録信号の高密度化や高品質化等が進められて
おり、この高記録密度化に対応して、磁気記録媒体とし
て磁性粉にＦｅ、Ｃｏ、Ｎｉ等の金属あるいは合金から
なる粉末を用いた、いわゆるメタルテープや、強磁性金
属材料を真空薄膜形成技術によりベースフィルム上に直
接被着した、いわゆる蒸着テープ等が開発され、各分野
で実用化されている。BACKGROUND OF THE INVENTION For example, audio tape recorders and VTs.
In a magnetic recording / reproducing apparatus such as an R (video tape recorder), higher density and higher quality of recording signals are being promoted. In response to this higher recording density, magnetic powder is used as a magnetic recording medium in Fe powder. So-called metal tapes using powders made of metals or alloys such as Co, Ni, and so-called vapor-deposited tapes on which a ferromagnetic metal material is directly deposited on a base film by a vacuum thin film forming technology have been developed. Has been put into practical use in.
【０００３】[0003]
【従来の技術及び発明が解決しようとする課題】ところ
で、このような所定の保磁力を有する磁気記録媒体の特
性を発揮せしめるためには、磁気ヘッドのコア材料の特
性として、高い飽和磁束密度Ｂｓを有するとともに、同
一の磁気ヘッドで再生を行なおうとする場合において
は、高透磁率を併せて有することが要求される。In order to bring out the characteristics of a magnetic recording medium having such a predetermined coercive force, a high saturation magnetic flux density Bs is required as a characteristic of the core material of the magnetic head. In addition, in the case of reproducing with the same magnetic head, it is required to have high magnetic permeability at the same time.
【０００４】従来は、センダスト合金（Ｆｅ−Ｓｉ−Ａ
ｌ、Ｂｓは、およそ１０ＫＧ）や、Ｃｏ系アモルファス
合金などが用いられていたが、センダスト合金は、膜の
内部応力が大きく、また結晶粒が成長し易く厚膜化が難
しい。また、飽和磁束密度Ｂｓが１０ＫＧ程度で、今以
上の高密度記録には飽和磁束密度Ｂｓが不充分である。
また、Ｃｏ系アモルファス合金は特性も良く高飽和磁束
密度Ｂｓのものも作製できるが、４５０℃程度で結晶化
してしまうため、ヘッド形成する際に高温でガラス接合
できず、充分な接合強度が得られないという難点があっ
た。Conventionally, a sendust alloy (Fe-Si-A) is used.
For l and Bs, about 10 KG) and Co-based amorphous alloys were used. However, in the Sendust alloy, the internal stress of the film is large, and it is difficult to increase the film thickness because crystal grains easily grow. Further, the saturation magnetic flux density Bs is about 10 KG, which is insufficient for higher density recording than this.
In addition, Co-based amorphous alloys have good characteristics and can be produced with high saturation magnetic flux density Bs, but since they crystallize at about 450 ° C., glass bonding cannot be performed at high temperature during head formation, and sufficient bonding strength is obtained. There was a difficulty that I could not do it.
【０００５】その他の軟磁性材料としては窒化鉄があ
り、一般に、窒素含有雰囲気中で鉄をターゲットとして
イオンビーム蒸着あるいはスパッタリング等により薄膜
状に形成される。さらに、この薄膜は必要に応じて熱処
理されることもあった。しかしながら、この軟磁性薄膜
は、熱処理又は加熱によって保磁力が大幅に上昇してし
まい特性の安定性が不充分であるという問題があった。Another soft magnetic material is iron nitride, which is generally formed into a thin film by ion beam deposition or sputtering with iron as a target in a nitrogen-containing atmosphere. Further, this thin film may be heat-treated if necessary. However, this soft magnetic thin film has a problem that the coercive force is significantly increased by heat treatment or heating, and the stability of the characteristics is insufficient.
【０００６】特開昭６３−２９９２１９号公報には、こ
のような問題点を改良せんとした次の軟磁性薄膜が記載
されている。Japanese Unexamined Patent Publication (Kokai) No. 63-299219 discloses the following soft magnetic thin film, which is an improvement over these problems.
【０００７】「ＦｅxＮyＡz（ただし、ｘ、ｙ、ｚは各
々組成比を原子％として表し、ＡはＳｉ、Ａｌ、Ｔａ、
Ｂ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｃｒ、Ｍｎ、Ｚｒ、Ｎ
ｂ、Ｔｉ、Ｍｏ、Ｖ、Ｗ、Ｈｆ、Ｇａ、Ｇｅ、希土類元
素の少なくとも１種を表す。）なる組成式で示され、そ
の組成範囲が
0.5≦ｙ≦ 5.0
0.5≦ｚ≦ 7.5
ｘ＋ｙ＋ｚ＝ １００
であることを特徴とする軟磁性薄膜。」"Fe x N y A z (where x, y, and z are composition ratios expressed in atomic%, A is Si, Al, Ta,
B, Mg, Ca, Sr, Ba, Cr, Mn, Zr, N
It represents at least one of b, Ti, Mo, V, W, Hf, Ga, Ge, and a rare earth element. ), The composition range is 0.5 ≦ y ≦ 5.0 0.5 ≦ z ≦ 7.5 x + y + z = 100. "
【０００８】しかし、特開昭６３−２９９２１９号公報
に記載の軟磁性薄膜もまた熱処理によって保磁力が上昇
するのを避けられない。However, the coercive force of the soft magnetic thin film described in JP-A-63-299219 is unavoidably increased by heat treatment.
【０００９】さらに一軸異方性を有していないため高周
波における透磁率を高くすることができないという欠点
がある。Further, since it has no uniaxial anisotropy, it has a drawback that the magnetic permeability at high frequencies cannot be increased.
【００１０】また、製膜条件にもよるが、一般的に結晶
質材料は、膜を付着する過程でセルフシャドウイング効
果によって柱状晶になり易く、粒界部にボイドが形成さ
れるために磁気的に不連続になり軟磁気特性が劣化して
しまう傾向がある。このセルフシャドウイング効果は、
磁気ヘッドを作製する際の様に下地に段差がある場合や
厚膜化する場合に特に顕著となり、充分な特性が得られ
ないという難点があった。Although it depends on the film forming conditions, generally, a crystalline material is apt to form columnar crystals due to the self-shadowing effect in the process of adhering the film, and voids are formed in the grain boundary portion, so that the magnetic material is magnetic. Tend to become discontinuous and soft magnetic properties deteriorate. This self-shadowing effect is
This is particularly noticeable when there is a step on the underlayer or when the film is thickened as in the case of manufacturing a magnetic head, and there is a problem that sufficient characteristics cannot be obtained.
【００１１】本発明は、上記従来技術の問題点を改良し
た軟磁性薄膜の提供を目的とする。It is an object of the present invention to provide a soft magnetic thin film that solves the above problems of the prior art.
【００１２】[0012]
【課題を解決するための手段及び作用】本発明によれば
次の軟磁性薄膜により上記目的を達成することができ
る。According to the present invention, the above object can be achieved by the following soft magnetic thin film.
【００１３】Ｆｅa-mＭmＢbＮc（但し、ａ、ｂ、ｃ、
ｍは各々原子％を示し、ＭはＣｏ、Ｒｕ、Ｃｒの少なく
とも１種以上を表わし、ＢはＺｒ、Ｈｆ、Ｔｉ、Ｎｂ、
Ｔａ、Ｍｏ、Ｗの少なくとも１種以上を表わす。）なる
組成式で示され、その組成範囲は
０＜ｍ／ａ＜ 0.1
０＜ｂ≦２０
０＜ｃ≦２２
の範囲(但し、ｂ≦7.5かつｃ≦５を除く)である軟磁性
薄膜。Fe am M m B b N c (provided that a, b, c,
m represents atomic% respectively, M represents at least one kind of Co, Ru and Cr, B represents Zr, Hf, Ti, Nb,
It represents at least one of Ta, Mo and W. ), And the composition range is 0 <m / a <0.10 <b ≦ 200 <c ≦ 22 (however, b ≦ 7.5 and c ≦ 5 are excluded).
【００１４】Ｆｅa-mＭmＢbＮc（但し、ａ、ｂ、ｃ、
ｍは各々原子％を示し、ＭはＣｏ、Ｒｕ、Ｃｒ、Ｖ、Ｎ
ｉ、Ｍｎ、Ｐｄ、Ｉｒ、Ｐｔの少なくとも１種以上を表
わし、ＢはＺｒ、Ｈｆ、Ｔｉ、Ｎｂ、Ｔａ、Ｍｏ、Ｗの
少なくとも１種以上を表わす。）なる組成式で示され、
その組成範囲は
０＜ｍ／ａ＜０．３
０＜ｂ≦２０
０＜ｃ≦２２
の範囲(但し、ｂ≦7.5かつｃ≦５を除く)である軟磁性
薄膜。Fe am M m B b N c (provided that a, b, c,
m is each atomic%, M is Co, Ru, Cr, V, N
i, Mn, Pd, Ir and Pt represent at least one kind, and B represents at least one kind of Zr, Hf, Ti, Nb, Ta, Mo and W. ) Is represented by the composition formula,
The soft magnetic thin film having a composition range of 0 <m / a <0.3 0 <b ≦ 20 0 <c ≦ 22 (excluding b ≦ 7.5 and c ≦ 5).
【００１５】これらの組成範囲を点Ｅ、Ｆ、Ｇ、Ｈ、
Ｉ、Ｊにより図１に示す。These composition ranges are defined by points E, F, G, H,
It is shown in FIG. 1 by I and J.
【００１６】上記の組成範囲において、好ましくは、
０＜ｍ／ａ＜０．２である。In the above composition range, preferably
0 <m / a <0.2.
【００１７】なお、上記組成式において、ａ＋ｂ＋ｃ＝
１００（ａｔ％）である。In the above composition formula, a + b + c =
It is 100 (at%).
【００１８】Ｆｅa-d-eＸbＮcＲｕdＺe（但し、ａ、
ｂ、ｃ、ｄ、ｅは各々原子％を示し、ＸはＺｒ及びＨｆ
の少なくとも１種以上を表わし、ＺはＣｒ、Ｖ及びＭｎ
の少なくとも１種以上を表わす。）なる組成式で示さ
れ、その組成範囲は
０＜ｂ≦２０
０＜ｃ≦２２
０＜ｄ≦１０
０＜ｅ≦５
の範囲(但し、ｂ≦7.5かつｃ≦５を除く)である軟磁性
薄膜。Fe ade X b N c Ru d Z e (provided that a,
b, c, d and e each represent atomic%, X represents Zr and Hf
Of at least one of Z, Cr, V and Mn.
Of at least one of ), The composition range is 0 <b ≦ 20 0 <c ≦ 2 20 <d ≦ 10 0 <e ≦ 5 (provided that b ≦ 7.5 and c ≦ 5 are excluded). Magnetic thin film.
【００１９】上記組成範囲において、ａ＋ｂ＋ｃ＝１０
０（ａｔ％）であり、好ましくは、前記ｂ、ｃ、ｄ及び
ｅのうちの少なくとも一が下記範囲内に属することであ
る。より好ましくは、これらの全てが下記範囲内に属す
ることである。
２≦ｂ≦１５
５≦ｃ≦２２
0.1≦ｄ≦１０
0.1≦ｅ≦５In the above composition range, a + b + c = 10
It is 0 (at%), and preferably at least one of b, c, d and e belongs to the following range. More preferably, all of them belong to the following range. 2 ≦ b ≦ 15 5 ≦ c ≦ 22 0.1 ≦ d ≦ 10 0.1 ≦ e ≦ 5
【００２０】本出願人は、前記従来技術の問題点を改良
するものとして次の軟磁性薄膜について特許出願を行っ
た（平成１年特許願第３０４８１１号）。The present applicant has filed a patent application for the following soft magnetic thin film as a solution to the above problems of the prior art (Japanese Patent Application No. 304811 in 1991).
【００２１】「ＦｅaＢbＮc（但し、ａ、ｂ、ｃは各々
原子％を示し、ＢはＺｒ、Ｈｆ、Ｔｉ、Ｎｂ、Ｔａ、
Ｖ、Ｍｏ、Ｗの少なくとも１種以上を表わす。）なる組
成式で示され、その組成範囲は
０＜ｂ≦２０
０＜ｃ≦２２
の範囲(但し、ｂ≦7.5かつｃ≦５を除く)であることを
特徴とする軟磁性薄膜。」"Fe a B b N c (where a, b and c each represent atomic%, B represents Zr, Hf, Ti, Nb, Ta,
Represents at least one of V, Mo and W. ), The composition range is 0 <b ≦ 200 0 <c ≦ 22 (however, b ≦ 7.5 and c ≦ 5 are excluded), the soft magnetic thin film. "
【００２２】これに対して、本発明の軟磁性薄膜は、Ｆ
ｅの一部を前記特定量の元素Ｍで置き換えているので、
次のような効果を奏する。磁歪を元素Ｍの含有量に対応
して正の方向へ変化させ又は０に近い値（絶対値）に正
確に調整できる。飽和磁束密度Ｂｓをより一層増加させ
ることができる（特にＭがＣｏの場合）。磁歪が小さい
場合にも異方性磁界を数Ｏｅ（少なくとも２Ｏｅ程度ま
で）つけることができ高周波で使用する場合にも高い透
磁率が得られる（特にＭがＣｏの場合）。耐食性をより
一層向上させることができる（特にＭがＣｒ、Ｃｏ、Ｎ
ｉ、Ｐｄ、Ｉｒ、Ｐｔ及びＲｕの少なくとも一種以上の
場合）。電気比抵抗を高めることができるので、渦電流
損失を低減でき、高周波で使用する場合にも高い透磁率
が得られる（特にＭが、Ｖ、Ｃｒ、Ｍｎの少なくとも一
種以上の場合）。On the other hand, the soft magnetic thin film of the present invention is F
Since a part of e is replaced by the specific amount of the element M,
It has the following effects. The magnetostriction can be changed in the positive direction or accurately adjusted to a value close to 0 (absolute value) in accordance with the content of the element M. The saturation magnetic flux density Bs can be further increased (especially when M is Co). Even if the magnetostriction is small, an anisotropic magnetic field of several Oe (up to at least about 2 Oe) can be applied, and a high magnetic permeability can be obtained even when used at a high frequency (especially when M is Co). Corrosion resistance can be further improved (especially M is Cr, Co, N
i, Pd, Ir, Pt, and / or Ru). Since the electrical resistivity can be increased, eddy current loss can be reduced, and a high magnetic permeability can be obtained even when used at high frequencies (in particular, when M is at least one of V, Cr and Mn).
【００２３】Ｆｅの一部をＲｕで置き換えた場合は、上
記のように耐食性をより一層向上させることができる。
そして、薄膜全体のうちの１０原子％までのＲｕでＦｅ
の一部を置き換える場合には、好ましくは、薄膜全体の
うちの５原子％までの前記Ｚ元素（即ち、Ｃｒ、Ｖ及び
Ｍｎの少なくとも１種以上の元素）で残りのＦｅの一部
を置き換える。これにより、軟磁性薄膜製造時及び製造
後に長時間（例えば４時間程度）の熱処理を行っても、
薄膜中の窒素が著しく減少せず、軟磁気特性が悪くなら
ない。Ｃｒ、Ｖ及びＭｎの各元素は、Ｎとの親和性が比
較的大きいことによると考えられる。なお、熱処理時間
が１時間程度であれば、薄膜中の窒素の著しい減少や軟
磁気特性の悪化は生じない。When part of Fe is replaced by Ru, the corrosion resistance can be further improved as described above.
And Fe is Fe with Ru of up to 10 atomic% of the whole thin film.
In the case of replacing a part of Fe, it is preferable to replace a part of the remaining Fe with the Z element (that is, at least one element of Cr, V and Mn) up to 5 atom% of the entire thin film. . As a result, even if the heat treatment is performed for a long time (for example, about 4 hours) during and after the soft magnetic thin film is manufactured,
Nitrogen in the thin film is not significantly reduced, and soft magnetic properties are not deteriorated. It is considered that each element of Cr, V and Mn has a relatively high affinity with N. If the heat treatment time is about 1 hour, the nitrogen content in the thin film is not significantly reduced and the soft magnetic characteristics are not deteriorated.
【００２４】好ましくは、前記組成範囲は
６９≦ａ≦９３
２≦ｂ≦１５
５≦ｃ≦２２
の範囲である。この組成範囲を点Ｑ、Ｋ、Ｌ、Ｕ、Ｍに
より図１に示す。Preferably, the composition range is 69≤a≤93 2≤b≤15 5≤c≤22. This composition range is shown in FIG. 1 by points Q, K, L, U and M.
【００２５】また好ましくは、その組成範囲は、前記四
者の擬三成分組成座標系（Ｆｅ＋Ｍ、Ｂ、Ｎ）において
Ｐ（９１、２、７）
Ｑ（９３、２、５）
Ｒ（８８、７、５）
Ｓ（７３、１２、１５）
Ｔ（６９、１２、１９）
Ｕ（６９、９、２２）
Ｖ（７６、５、１９）
の７点を結ぶ線分で囲まれた範囲である。この組成範囲
を点Ｐ、Ｑ、Ｒ、Ｓ、Ｔ、Ｕ、Ｖにより図１に示す。Further, preferably, the composition range is P (91,2,7) Q (93,2,5) R (88, in the four quasi three-component composition coordinate system (Fe + M, B, N). 7, 5) S (73, 12, 15) T (69, 12, 19) U (69, 9, 22) V (76, 5, 19) It is the range surrounded by the line segment connecting 7 points. . This composition range is shown in FIG. 1 by points P, Q, R, S, T, U and V.
【００２６】結晶粒径は、好ましくは３００⌒以下であ
る。The crystal grain size is preferably 300 ⌒ or less.
【００２７】[0027]
【好適な実施態様及び作用】本発明の軟磁性薄膜は、Ｆ
ｅ、Ｎと、特定の元素Ｍ、即ち、Ｃｏ、Ｒｕ、Ｃｒ、
Ｖ、Ｎｉ、Ｍｎ、Ｐｄ、Ｉｒ、Ｐｔの少なくとも１種以
上の元素と、特定の添加元素Ｂ、即ち、Ｚｒ、Ｈｆ、Ｔ
ｉ、Ｎｂ、Ｔａ、Ｍｏ、Ｗの少なくとも１種以上の元素
とから成り、これらＦｅとＮと特定の元素ＭとＢ（夫々
２種以上も含む）の四者は、前記特定の組成範囲内にあ
る。BEST MODE FOR CARRYING OUT THE INVENTION The soft magnetic thin film of the present invention comprises F
e, N and a specific element M, that is, Co, Ru, Cr,
At least one element of V, Ni, Mn, Pd, Ir, and Pt, and a specific additive element B, that is, Zr, Hf, T
i, Nb, Ta, Mo, W and at least one or more elements, and Fe, N and specific elements M and B (each including two or more elements) are within the specific composition range. It is in.
【００２８】前記組成範囲が、０＜ｂ≦２０かつ、０＜
ｃ≦２２の範囲（但し、ｂ≦7.5かつｃ≦５を除く)であ
る場合、好ましくは、ｂ≧0.5かつｃ≧0.5とする。ｂ＜
0.5又はｃ＜0.5の場合にはその存在による効果が発揮さ
れないことが多いからである。The composition range is 0 <b ≦ 20 and 0 <b
In the case of c ≦ 22 (excluding b ≦ 7.5 and c ≦ 5), b ≧ 0.5 and c ≧ 0.5 are preferable. b <
This is because when 0.5 or c <0.5, the effect due to the presence is often not exhibited.
【００２９】前記添加元素Ｂが２０原子％を越えるか、
又は、Ｎが２２原子％を越える場合には、良好な軟磁性
が得られない。Whether the additive element B exceeds 20 atom%,
Alternatively, if N exceeds 22 atomic%, good soft magnetism cannot be obtained.
【００３０】前記組成範囲が、６９≦ａ≦９３かつ２≦
ｂ≦１５かつ５＜ｃ≦２２（より好ましくは5.5≦ｃ≦
２２）の場合は、より良好な軟磁性を示す。The composition range is 69≤a≤93 and 2≤
b ≦ 15 and 5 <c ≦ 22 (more preferably 5.5 ≦ c ≦
In the case of 22), better soft magnetism is exhibited.
【００３１】また、好ましくは、前記組成は、前記四者
の擬三成分組成座標系（Ｆｅ＋Ｍ、Ｂ、Ｎ）において、
前記特定の点Ｐ、Ｑ、Ｒ、Ｓ、Ｔ、Ｕ、Ｖの７点を結ぶ
線分で囲まれた範囲である。この組成範囲では保磁力が
小さいので、特に磁気ヘッドのコア材料等に好適であ
る。最も好ましくは、保磁力が1.5Ｏｅ以下（さらには
１Ｏｅ以下）を示す組成範囲である。Also, preferably, the composition is in the quasi-ternary composition coordinate system (Fe + M, B, N) of the four parties,
It is a range surrounded by a line segment connecting the seven points of the specific points P, Q, R, S, T, U, and V. Since the coercive force is small in this composition range, it is particularly suitable as a core material of a magnetic head. The most preferable composition range is a coercive force of 1.5 Oe or less (further, 1 Oe or less).
【００３２】前記添加元素ＢがＺｒである場合、軟磁性
薄膜の好ましい組成範囲は、
Ｆｅd（ＺｒeＮ1-e）100-d
７７≦ｄ≦８８
0.3≦ｅ≦0.38
で示される範囲である（但し、このＦｅの一部は前記特
定量の元素Ｍで置き換えられている）。この組成範囲を
点Ｗ、Ｘ、Ｙ、Ｚにより図１に示す。これらの点Ｗ、
Ｘ、Ｙ、Ｚの座標はほぼ次の通りである。When the additive element B is Zr, the preferable composition range of the soft magnetic thin film is Fe d (Zr e N 1-e ) 100-d 77 ≦ d ≦ 88 0.3 ≦ e ≦ 0.38 (However, a part of this Fe is replaced by the above-mentioned specific amount of element M). This composition range is shown in FIG. 1 by points W, X, Y and Z. These points W,
The X, Y, Z coordinates are approximately as follows.
【００３３】
Ｗ（８８、3.6、8.4）
Ｘ（８８、4.56、7.44）
Ｙ（７７、8.74、14.26）
Ｚ（７７、6.9、16.1）
即ち、この範囲では、Ｆｅ及びＭを７７〜８８原子％含
み、かつ、Ｚｒの含有率ｂ（原子％）とＮの含有率ｃ
（原子％）の比ｃ／ｂがおよそ1.63〜2.33となってい
る。この組成範囲の軟磁性薄膜は、良好な軟磁性（例え
ば、保磁力Ｈｃ＜５Ｏｅ）を示す。W (88, 3.6, 8.4) X (88, 4.56, 7.44) Y (77, 8.74, 14.26) Z (77, 6.9, 16.1) That is, in this range, Fe and M are 77 to 88 atomic%. Contains, and Zr content b (atomic%) and N content c
The ratio c / b of (atomic%) is about 1.63 to 2.33. The soft magnetic thin film in this composition range exhibits excellent soft magnetism (for example, coercive force Hc <5 Oe).
【００３４】前記添加元素Ｂは、一種又は二種以上にす
ることができる。例えばＺｒのみ添加することができる
が、その他の添加元素でＺｒの一部（例えば添加される
Ｚｒのうちの３０原子％）を置き換えることができる。The additive element B may be one kind or two or more kinds. For example, only Zr can be added, but a part of Zr (for example, 30 atomic% of added Zr) can be replaced with other additive element.
【００３５】本発明の軟磁性薄膜は、例えばＲＦスパッ
タ法等の気相析着法により前記特定組成の非晶質薄膜を
得て、この非晶質薄膜を例えば、３５０〜６５０℃で熱
処理し前記非晶質薄膜の一部ないし全部を結晶化させて
製造することができる。好ましくは、前記熱処理時に磁
界を印加して一軸磁気異方性を誘導し前記非晶質薄膜の
一部ないし全部を結晶化させて製造することができる。For the soft magnetic thin film of the present invention, an amorphous thin film having the above-described specific composition is obtained by vapor deposition such as RF sputtering, and this amorphous thin film is heat-treated at 350 to 650 ° C., for example. It can be manufactured by crystallizing a part or all of the amorphous thin film. Preferably, a magnetic field may be applied during the heat treatment to induce uniaxial magnetic anisotropy to crystallize a part or all of the amorphous thin film.
【００３６】本発明の軟磁性薄膜を前記の方法により製
造する場合、形成される基板の種類により製造後の軟磁
性薄膜の諸特性に差が生じる場合があるので、適宜基板
を選択して製造することが好ましい。When the soft magnetic thin film of the present invention is manufactured by the above method, the characteristics of the soft magnetic thin film after manufacturing may differ depending on the type of the substrate to be formed. Preferably.
【００３７】[0037]
【実施例】以下の実施例により本発明の効果を示す。EXAMPLES The effects of the present invention will be shown by the following examples.
【００３８】[0038]
【実施例１】Ｆｅ90-mＣｏmＺｒ10（ｍ＝1.5、3.0又は
4.5(ａｔ％)）の組成のターゲットを用い、0.0、2.5、
5.0、7.5、10.0、12.5モル％の窒素を含む窒素含有アル
ゴンガス雰囲気中で高周波スパッタリングを行ない、種
々の組成のＦｅ−Ｃｏ−Ｚｒ−Ｎ非晶質薄膜を得た。こ
れらの非晶質薄膜を磁界中において３５０℃×１時間又
は５５０℃×１時間で熱処理し種々のＦｅ−Ｃｏ−Ｚｒ
−Ｎ軟磁性薄膜を得た。これらの結果を表１に示す。ま
た表１には、５５０℃×１時間の熱処理によって得られ
た軟磁性薄膜中における全メタル原子（Ｆｅ、Ｃｏ及び
Ｚｒ）中のＺｒの存在率（％）、及び窒素／Ｚｒ比も示
す。さらに軟磁性薄膜の磁気特性として保磁力Ｈｃ、異
方性磁界Ｈｋ及び飽和磁歪λsもあわせて示す。EXAMPLE 1 Fe 90-m Co m Zr 10 (m = 1.5,3.0 or
4.5 (at%)) target, 0.0, 2.5,
High frequency sputtering was performed in a nitrogen-containing argon gas atmosphere containing 5.0, 7.5, 10.0 and 12.5 mol% of nitrogen to obtain Fe-Co-Zr-N amorphous thin films having various compositions. These amorphous thin films were heat-treated in a magnetic field at 350 ° C. × 1 hour or 550 ° C. × 1 hour to obtain various Fe—Co—Zr.
A -N soft magnetic thin film was obtained. The results are shown in Table 1. Table 1 also shows the abundance (%) of Zr in all metal atoms (Fe, Co and Zr) in the soft magnetic thin film obtained by the heat treatment at 550 ° C. for 1 hour, and the nitrogen / Zr ratio. Furthermore, coercive force Hc, anisotropic magnetic field Hk, and saturation magnetostriction λs are also shown as magnetic characteristics of the soft magnetic thin film.
【００３９】[0039]
【表１】 [Table 1]
【００４０】[0040]
【実施例２】実施例１と同様にして種々の組成の非晶質
薄膜を得た。これらの非晶質薄膜を磁界中において５５
０℃で１、２、３、４時間熱処理して種々の軟磁性薄膜
を得た。これらの結果を得られた軟磁性薄膜の種々の特
性と共に表２に示す。Example 2 In the same manner as in Example 1, amorphous thin films having various compositions were obtained. These amorphous thin films are exposed to a magnetic field of 55
Various soft magnetic thin films were obtained by heat treatment at 0 ° C. for 1, 2, 3, 4 hours. Table 2 shows various characteristics of the soft magnetic thin film obtained by these results.
【００４１】[0041]
【参考例】Ｆｅ90.0Ｚｒ10.0の組成のターゲットを用
い、6.0モル％の窒素を含有する窒素含有アルゴンガス
雰囲気中で高周波スパッタリングを行ないＦｅ−Ｚｒ−
Ｎ非晶質薄膜を形成し、これを磁界中において５５０℃
で１、２、３、４時間熱処理しＦｅ−Ｚｒ−Ｎ軟磁性薄
膜を得た。これらの結果を表２に示す。[Reference example] Using a target having a composition of Fe 90.0 Zr 10.0 , high frequency sputtering was performed in a nitrogen-containing argon gas atmosphere containing 6.0 mol% of nitrogen.
N amorphous thin film is formed, and this is 550 ° C. in a magnetic field.
Then, the Fe-Zr-N soft magnetic thin film was obtained by heat treatment for 1, 2, 3, 4 hours. The results are shown in Table 2.
【００４２】[0042]
【表２】 [Table 2]
【００４３】[0043]
【実施例３】Ｆｅ90-xＲｕxＺｒ10（ｘ＝1.5、3.0又は
4.5(ａｔ％)）の組成のターゲットを用いて高周波スパ
ッタリングを行ないＦｅ−Ｒｕ−Ｚｒ−Ｎ非晶質薄膜を
形成し、これらを５５０℃×１時間で熱処理してＦｅ−
Ｒｕ−Ｚｒ−Ｎ軟磁性薄膜を得た。前記非晶質薄膜形成
時のスパッタガス雰囲気中のＮ2含有率と、得られた軟
磁性薄膜の飽和磁歪λsとの関係を図２に示す。Example 3 Fe 90-x Ru x Zr 10 (x = 1.5, 3.0 or
High frequency sputtering is performed using a target having a composition of 4.5 (at%)) to form an Fe-Ru-Zr-N amorphous thin film, and these are heat-treated at 550 ° C x 1 hour to produce Fe-
A Ru-Zr-N soft magnetic thin film was obtained. FIG. 2 shows the relationship between the N 2 content in the sputtering gas atmosphere when forming the amorphous thin film and the saturation magnetostriction λs of the obtained soft magnetic thin film.
【００４４】[0044]
【実施例４】Ｆｅ92.6-xＸXＺｒ7.4（Ｘ＝Ｃｏ、Ｃｒ又
はＲｕ）のターゲットを用いて高周波スパッタリングを
行ないＦｅ−Ｘ−Ｚｒ−Ｎ非晶質薄膜を形成し、これら
を熱処理してＦｅ−Ｘ−Ｚｒ−Ｎ軟磁性薄膜を得た。得
られた前記軟磁性薄膜に含まれる前記Ｘ元素の含有率ｘ
と、軟磁性薄膜の飽和磁歪λsとの関係を図３に示す。Example 4 Fe 92.6-x X X Zr 7.4 to form a Fe-X-Zr-N amorphous thin film subjected to the high-frequency sputtering using a target of (X = Co, Cr or Ru), and heat-treated them To obtain an Fe-X-Zr-N soft magnetic thin film. Content x of the X element contained in the obtained soft magnetic thin film x
And the saturation magnetostriction λs of the soft magnetic thin film are shown in FIG.
【００４５】図３によれば、次のことがわかる。Ｃｏ、
Ｃｒ又はＲｕを含まない軟磁性薄膜は飽和磁歪λsが負
でありその値は−４×１０-7である。ところがＦｅの一
部をＣｏ、Ｃｒ又はＲｕの一部でしだいに置き換えてゆ
くと飽和磁歪λsが正に変化しその値もしだいに大きく
なる。従って、好ましい飽和磁歪、その絶対値が９×１
０-7以下、より好ましくは６×１０-7、さらに好ましく
は２×１０-7以下から０までの軟磁性薄膜を、それに対
応する特定量のＣｏ、Ｃｒ又はＲｕでＦｅの一部を置き
換えることによって得ることができる。According to FIG. 3, the following can be seen. Co,
The soft magnetic thin film containing no Cr or Ru has a negative saturation magnetostriction λs and its value is −4 × 10 −7 . However, when part of Fe is gradually replaced with part of Co, Cr, or Ru, the saturation magnetostriction λs changes positively and its value gradually increases. Therefore, the preferred saturation magnetostriction, the absolute value of which is 9 × 1
0 -7 or less, replacing some of the Fe soft magnetic thin film and more preferably 6 × 10 -7, more preferably from 2 × 10 -7 or less to 0, in particular of Co, Cr or Ru corresponding thereto Can be obtained by
【００４６】[0046]
【実施例５】Ｆｅ90-xＣｏxＺｒ10（ｘ＝1.5、3.0又は
4.5(ａｔ％)）のターゲットを用いて高周波スパッタリ
ングを行ないＦｅ−Ｃｏ−Ｚｒ−Ｎ非晶質薄膜を形成
し、これらを５５０℃で１時間又は４時間熱処理してＦ
ｅ−Ｃｏ−Ｚｒ−Ｎ軟磁性薄膜を得た。前記非晶質薄膜
形成時のスパッタガス雰囲気中のＮ2含有率と、得られ
た軟磁性薄膜の飽和磁歪λsとの関係を図４に示す。Example 5 Fe 90-x Co x Zr 10 (x = 1.5, 3.0 or
4.5 (at%)) target to perform high frequency sputtering to form an Fe-Co-Zr-N amorphous thin film, and heat-treat these at 550 ° C. for 1 hour or 4 hours to remove F
An e-Co-Zr-N soft magnetic thin film was obtained. FIG. 4 shows the relationship between the N 2 content in the sputtering gas atmosphere when forming the amorphous thin film and the saturation magnetostriction λs of the obtained soft magnetic thin film.
【００４７】[0047]
【実施例６】Ｆｅ90-xＣｒxＺｒ10（ｘ＝1.5、3.0又は
4.5(ａｔ％)）のターゲットを用いて１０％Ｎ2−Ａｒ雰
囲気中で高周波スパッタリングを行ないＦｅ−Ｘ−Ｚｒ
−Ｎ非晶質薄膜を形成し、これを５５０℃で４時間熱処
理してＦｅ−Ｘ−Ｚｒ−Ｎ軟磁性薄膜を得た。前記軟磁
性薄膜に含まれる前記Ｘ元素（Ｃｒ）の含有率ｘと、得
られた軟磁性薄膜の飽和磁歪λsとの関係を図５に示
す。また、これらの膜の分析組成と飽和磁歪、異方性磁
界Hk、電気比抵抗ρの値を表３に示す。Example 6 Fe 90-x Cr x Zr 10 (x = 1.5, 3.0 or
4.5 (at%)) target and high-frequency sputtering was performed in a 10% N 2 -Ar atmosphere to perform Fe-X-Zr.
A -N amorphous thin film was formed and heat-treated at 550 ° C for 4 hours to obtain a Fe-X-Zr-N soft magnetic thin film. FIG. 5 shows the relationship between the content x of the X element (Cr) contained in the soft magnetic thin film and the saturation magnetostriction λs of the obtained soft magnetic thin film. Table 3 shows the analysis composition, saturation magnetostriction, anisotropic magnetic field Hk, and electrical resistivity ρ of these films.
【００４８】図５および表３から次のことが判る。ｘ＝
４までＣｒが含有されても飽和磁歪は１０の−６乗以下
であり良好な軟磁性を示す。（特にｘ＝0.75の時に飽和
磁歪は零となり、良好な軟磁性を示す。）また、Ｃｒ添
加によって電気比抵抗が約１００μΩcmとなり、即ちセ
ンダスト合金と同等以上に高くなり、高周波での渦電流
損失を低減することができる。これは、Ｎの含有量がＣ
ｒを添加していない合金よりも高いためと考えられる。The following can be seen from FIG. 5 and Table 3. x =
Even when Cr is contained up to 4, the saturation magnetostriction is 10 −6 power or less and shows good soft magnetism. (Especially when x = 0.75, saturation magnetostriction becomes zero and shows good soft magnetism.) Also, the electrical resistivity becomes about 100 μΩcm by adding Cr, that is, it becomes higher than that of Sendust alloy, and eddy current loss at high frequency. Can be reduced. This is because the content of N is C
It is considered that this is because it is higher than the alloy in which r is not added.
【００４９】[0049]
【表３】 [Table 3]
【００５０】以上本発明の実施例によれば、１０ａｔ％
（さらには15ａｔ％）を越えてＮを含有する軟磁性薄膜
が得られた。As described above, according to the embodiment of the present invention, 10 at%
A soft magnetic thin film containing N (more than 15 at%) was obtained.
【００５１】[0051]
【実施例７】Ｆｅ−Ｍ−Ｚｒ10（Ｍ＝Ｃｒ又はＣｏ）の
ターゲット、又はＶ、Ｍｎ若しくはＮｉの小片をのせた
Ｆｅ90Ｚｒ10のターゲットを用いて、１０％Ｎ2−Ａｒ
雰囲気中で高周波スパッタリングを行ないＦｅ−Ｍ−Ｚ
ｒ−Ｎ非晶質薄膜（Ｍ＝Ｖ、Ｃｒ、Ｍｎ、Ｃｏ又はＮ
ｉ）を形成し、これらを５５０℃４時間、磁界中で熱処
理し、Ｆｅ−Ｍ−Ｚｒ−Ｎ軟磁性薄膜（Ｍ＝Ｖ、Ｃｒ、
Ｍｎ、Ｃｏ又はＮｉ）を得た。EXAMPLE 7 Using Fe-M-Zr 10 of (M = Cr or Co) target, or V, a target of Fe 90 Zr 10 topped with pieces of Mn or Ni, 10% N 2 -Ar
High frequency sputtering in atmosphere, Fe-M-Z
r-N amorphous thin film (M = V, Cr, Mn, Co or N
i) is formed, and these are heat-treated in a magnetic field at 550 ° C. for 4 hours to obtain a Fe-M-Zr-N soft magnetic thin film (M = V, Cr,
Mn, Co or Ni) was obtained.
【００５２】得られたＦｅ−Ｍ−Ｚｒ−Ｎ軟磁性薄膜の
飽和磁束密度ＢS、飽和磁歪λS 、異方性磁界ＨK、電気
比抵抗ρ及び原子％によるＮ／Ｚｒ比をそれぞれ図６〜
図１０に示す。これらの図の横軸は、得られた軟磁性薄
膜中のＦｅとＭとＺｒに対するＭ元素、即ち、Ｖ、Ｃ
ｒ、Ｍｎ、Ｃｏ又はＮｉ元素の存在率ｍ（原子％）を示
す。また、これらの膜の分析組成と飽和磁歪、Ｂｓ、Ｈ
ｋ、Ｈｃ、ρの値を表４に示す。The saturation magnetic flux density B S , the saturation magnetostriction λ S , the anisotropic magnetic field H K , the electrical resistivity ρ, and the N / Zr ratio by atomic% of the Fe-M-Zr-N soft magnetic thin film thus obtained are shown respectively. 6 ~
As shown in FIG. The abscissas of these figures are M elements for Fe, M and Zr in the obtained soft magnetic thin film, that is, V and C.
The abundance ratio m (atomic%) of r, Mn, Co, or Ni element is shown. In addition, the analysis composition and saturation magnetostriction of these films, Bs, H
Table 4 shows the values of k, Hc, and ρ.
【００５３】[0053]
【表４】 [Table 4]
【００５４】図６によれば、得られた軟磁性薄膜は、高
い飽和磁束密度を有することがわかる。なお、Ｃｏを含
有する場合は、Ｃｏ以外の元素とは異なり、Ｃｏ元素の
存在率の増加にともない飽和磁束密度も増加するという
ことがわかる。According to FIG. 6, the obtained soft magnetic thin film has a high saturation magnetic flux density. It should be noted that when Co is contained, unlike the elements other than Co, the saturation magnetic flux density increases as the abundance ratio of the Co element increases.
【００５５】図７によれば、Ｆｅ−Ｚｒ−Ｎ軟磁性薄膜
の飽和磁歪は負（−２．５×１０-7）であるが、前記Ｍ
元素を存在させることにより飽和磁歪を０ないし正にす
ることができる、ということがわかる。特に、すべての
Ｍ元素についてｍが0.5〜1.5原子％の範囲で飽和磁歪が
０になる。また、Ｍ元素を多量に添加しても、飽和磁歪
は、１０-6オーダー以下である。According to FIG. 7, the saturation magnetostriction of the Fe—Zr—N soft magnetic thin film is negative (−2.5 × 10 −7 ).
It can be seen that the saturation magnetostriction can be made 0 or positive by the presence of the element. Particularly, for all M elements, the saturation magnetostriction becomes 0 when m is in the range of 0.5 to 1.5 atomic%. Even if a large amount of M element is added, the saturation magnetostriction is 10 −6 order or less.
【００５６】図８は、Ｍ元素の添加による誘導異方性磁
界の変化を示す。Ｆｅ−Ｚｒ−Ｎ軟磁性薄膜の一軸異方
性磁界は、１．３（Ｏｅ）であるが、Ｍ元素を３原子％
まで添加する場合は、いずれのＭ元素でも異方性磁界を
増加させることができる。しかし、Ｃｒ、Ｍｎ、及びＮ
ｉの場合は、３原子％を越えて添加すると、異方性磁界
が減少する。このように、本発明の軟磁性薄膜は、誘導
磁気異方性を付与できるので高周波透磁率を出しやす
い。FIG. 8 shows changes in the induced anisotropy field due to the addition of the M element. The uniaxial anisotropic magnetic field of the Fe-Zr-N soft magnetic thin film is 1.3 (Oe), but the M element is 3 atom%.
When added up to, any anisotropic element can increase the anisotropic magnetic field. However, Cr, Mn, and N
In the case of i, if added in excess of 3 atomic%, the anisotropic magnetic field decreases. As described above, the soft magnetic thin film of the present invention can impart induced magnetic anisotropy, and thus can easily provide high frequency magnetic permeability.
【００５７】図９は、Ｍ元素添加による電気比抵抗の変
化を示す。Ｖ、Ｃｒ、又はＭｎのいずれかを５％程度添
加することにより、１００μΩ・ｃｍを越える著しい電
気比抵抗の増加が観られた。これにより、高周波での渦
電流損失を低減することができる。一方、Ｃｏ及びＮｉ
を５％程度添加しても、電気比抵抗はあまり増加しなか
った。FIG. 9 shows the change in electrical resistivity due to the addition of the M element. By adding about 5% of V, Cr, or Mn, a remarkable increase in electrical resistivity exceeding 100 μΩ · cm was observed. As a result, eddy current loss at high frequencies can be reduced. On the other hand, Co and Ni
Even if about 5% was added, the electrical resistivity did not increase so much.
【００５８】図１０は、Ｍ元素の存在率ｍとＮ／Ｚｒ比
との関係を示す。図１０によれば、Ｖ、Ｃｒ及びＭｎ
は、ＣｏやＮｉに比較して、Ｎとの親和性が良好である
と考えられる。即ち、得られた軟磁性薄膜にＶ、Ｃｒ又
はＭｎが存在する場合には、Ｃｏ又はＮｉが存在する場
合よりも、より多くのＮが存在できると考えられる。FIG. 10 shows the relationship between the abundance ratio m of the M element and the N / Zr ratio. According to FIG. 10, V, Cr and Mn
Is considered to have a better affinity with N than Co or Ni. That is, it is considered that when V, Cr, or Mn is present in the obtained soft magnetic thin film, more N can be present than when Co or Ni is present.
【００５９】[0059]
【実施例８】Ｆｅ85.5Ｚｒ10Ｒｕ4.5の組成のターゲッ
トを用い、このターゲット上に５ｍｍ角のＣｒ小片を配
して、５モル％の窒素を含む窒素含有アルゴンガス雰囲
気中でＲＦスパッタリングを行ない（電力４００Ｗ）、
種々の組成のＦｅ−Ｚｒ−Ｎ−Ｒｕ−Ｃｒ非晶質薄膜
（膜厚約１μｍ）を得た。これらの非晶質薄膜を磁界中
において５５０℃で４時間熱処理して、種々のＦｅ−Ｚ
ｒ−Ｎ−Ｒｕ−Ｃｒ軟磁性薄膜を得た。得られた軟磁性
薄膜の組成（原子％）及び磁化容易軸方向の保磁力Ｈｃ
［Ｏｅ］を表５に示す。Example 8 A target having a composition of Fe 85.5 Zr 10 Ru 4.5 was used, a 5 mm square Cr piece was placed on this target, and RF sputtering was performed in an atmosphere of nitrogen-containing argon gas containing 5 mol% nitrogen. (Power 400W),
Fe-Zr-N-Ru-Cr amorphous thin films (film thickness: about 1 [mu] m) having various compositions were obtained. These amorphous thin films were heat-treated in a magnetic field at 550 ° C. for 4 hours to obtain various Fe-Z
An r-N-Ru-Cr soft magnetic thin film was obtained. Composition (atomic%) of the obtained soft magnetic thin film and coercive force Hc in the direction of easy axis of magnetization
Table 5 shows [Oe].
【００６０】表５によれば、ＲｕでＦｅの一部を置き換
える場合には、1.58原子％のＣｒで残りのＦｅの一部を
置き換えることにより、長時間熱処理による保磁力の増
大を防止できる、ということがわかる。According to Table 5, when a part of Fe is replaced by Ru, 1.58 atomic% of Cr replaces a part of the remaining Fe, whereby an increase in coercive force due to long-time heat treatment can be prevented. I understand that.
【００６１】[0061]
【表５】 [Table 5]
【００６２】[0062]
【発明の効果】本発明の軟磁性薄膜は、上述の説明から
も明らかな様に、センダスト合金やアモルファス軟磁性
合金よりもはるかに高い飽和磁束密度を有し、かつ、磁
歪を零とすることができ、低保磁力、高透磁率の優れた
軟磁気特性を得ることができる。As is apparent from the above description, the soft magnetic thin film of the present invention has a saturation magnetic flux density much higher than those of the Sendust alloy and the amorphous soft magnetic alloy, and has zero magnetostriction. It is possible to obtain excellent soft magnetic properties such as low coercive force and high magnetic permeability.
【００６３】また、電気抵抗率もセンダスト並に高く磁
界中熱処理によって一軸異方性を持たせることができ、
その大きさも組成や熱処理時間によって制御することが
できるので、目的に応じた高周波透磁率を得ることがで
きる。さらに６５０℃までの熱処理によっても特性が劣
化しないことから、ガラスボンディングなどに対する耐
熱性にも優れており、あわせて高い硬度と耐食性を持つ
ことから、耐摩耗性も高く、信頼性の高い材料となって
いる。Further, the electrical resistivity is as high as Sendust, and uniaxial anisotropy can be given by heat treatment in a magnetic field.
Since its size can also be controlled by the composition and heat treatment time, it is possible to obtain a high frequency magnetic permeability according to the purpose. Furthermore, since the characteristics do not deteriorate even by heat treatment up to 650 ° C, it has excellent heat resistance against glass bonding, etc., and also has high hardness and corrosion resistance, so it has high wear resistance and high reliability. Has become.
【００６４】本発明の軟磁性薄膜は、製膜時には非晶質
合金として形成し熱処理によって後から微結晶化させる
ことができるので、膜形成にあたってステップカバレッ
ジが良好でかつ鏡面が得られ易く多層膜化などの手段に
依らなくても結晶粒の粗大化を防ぐことができるので、
厚膜化することが可能である。Since the soft magnetic thin film of the present invention can be formed as an amorphous alloy at the time of film formation and can be microcrystallized later by heat treatment, it has a good step coverage in forming the film and is easy to obtain a mirror surface. Since it is possible to prevent coarsening of crystal grains without relying on a means such as
It is possible to increase the film thickness.
【００６５】前記特定量のＲｕと前記特定量のＣｒ、Ｖ
及びＭｎのうちの少なくとも１種でＦｅの一部を置き換
えた軟磁性薄膜は、顕著な耐食性を有すると共に、長時
間熱処理によっても薄膜中の窒素が著しく減少せず、軟
磁気特性が悪くならない。The specific amount of Ru and the specific amounts of Cr and V
The soft magnetic thin film in which a part of Fe is replaced by at least one of Fe and Mn has remarkable corrosion resistance, and nitrogen in the thin film does not significantly decrease even after long-time heat treatment, and soft magnetic characteristics do not deteriorate.
【００６６】従って、本発明の軟磁性薄膜を例えば磁気
ヘッドのコア材料として用いることによって、高保磁力
の磁気記録媒体に対応することができ、高品質化、高帯
域化、高記録密度化を図ることができる。Therefore, by using the soft magnetic thin film of the present invention as a core material of a magnetic head, for example, it is possible to deal with a magnetic recording medium having a high coercive force, and to achieve high quality, high bandwidth and high recording density. be able to.
【図１】本発明の軟磁性薄膜の組成範囲を示す図であ
る。FIG. 1 is a diagram showing a composition range of a soft magnetic thin film of the present invention.
【図２】非晶質薄膜形成時のスパッタガス雰囲気中のＮ
2含有率と、得られた軟磁性薄膜の飽和磁歪λsとの関係
を示す図である。FIG. 2 shows N in a sputtering gas atmosphere when forming an amorphous thin film.
2 is a diagram showing the relationship between the content rate and the saturation magnetostriction λs of the obtained soft magnetic thin film. FIG.
【図３】得られた軟磁性薄膜に含まれる前記Ｘ元素の含
有率ｘと、軟磁性薄膜の飽和磁歪λsとの関係を示す図
である。FIG. 3 is a diagram showing the relationship between the content x of the X element contained in the obtained soft magnetic thin film and the saturation magnetostriction λs of the soft magnetic thin film.
【図４】非晶質薄膜形成時のスパッタガス雰囲気中のＮ
2含有率と、得られた軟磁性薄膜の飽和磁歪λsとの関係
を示す図である。FIG. 4 N in a sputtering gas atmosphere when forming an amorphous thin film
2 is a diagram showing the relationship between the content rate and the saturation magnetostriction λs of the obtained soft magnetic thin film. FIG.
【図５】得られた軟磁性薄膜に含まれるＣｒの含有率ｘ
と、軟磁性薄膜の飽和磁歪λsとの関係を示す図であ
る。FIG. 5: Content x of Cr contained in the obtained soft magnetic thin film
FIG. 3 is a diagram showing the relationship between the magnetic field and the saturation magnetostriction λs of the soft magnetic thin film.
【図６】本発明の軟磁性薄膜のＭ元素の存在率ｍ（原子
％）（但し、ＦｅとＭとＺｒ中におけるＭの存在率）
（以下同じ）と飽和磁束密度との関係を示す図である。FIG. 6 shows the abundance ratio M (atomic%) of M element in the soft magnetic thin film of the present invention (however, the abundance ratio of M in Fe, M and Zr).
It is a figure which shows the relationship between (same below) and saturation magnetic flux density.
【図７】本発明の軟磁性薄膜のＭ元素の存在率ｍと飽和
磁歪λsとの関係を示す図である。FIG. 7 is a diagram showing the relationship between the abundance ratio m of M element and the saturation magnetostriction λs of the soft magnetic thin film of the present invention.
【図８】本発明の軟磁性薄膜のＭ元素の存在率ｍと異方
性磁界Ｈｋとの関係を示す図である。FIG. 8 is a diagram showing a relationship between an abundance ratio m of M element and an anisotropic magnetic field Hk in the soft magnetic thin film of the present invention.
【図９】本発明の軟磁性薄膜のＭ元素の存在率ｍと電気
比抵抗ρとの関係を示す図である。FIG. 9 is a diagram showing the relationship between the abundance ratio m of the M element and the electrical resistivity ρ of the soft magnetic thin film of the present invention.
【図１０】本発明の軟磁性薄膜のＭ元素の存在率ｍとＮ
／Ｚｒ比との関係を示す図である。FIG. 10 shows the abundance ratio m and N of M element in the soft magnetic thin film of the present invention.
It is a figure which shows the relationship with / Zr ratio.
Claims (4)
は各々原子％を示し、ＭはＣｏ、Ｒｕ、Ｃｒの少なくと
も１種以上を表わし、ＢはＺｒ、Ｈｆ、Ｔｉ、Ｎｂ、Ｔ
ａ、Ｍｏ、Ｗの少なくとも１種以上を表わす。）成る組
成式で示され、その組成範囲は ０＜ｍ／ａ＜０．１ ０＜ｂ≦２０ ０＜ｃ≦２２ の範囲(但し、ｂ≦7.5かつｃ≦５を除く)であることを
特徴とする軟磁性薄膜。1. Fe am M m B b N c (provided that a, b, c, m
Each represent atomic%, M represents at least one of Co, Ru and Cr, B represents Zr, Hf, Ti, Nb and T.
Represents at least one of a, Mo and W. ), The composition range is 0 <m / a <0.1 0 <b ≦ 20 0 <c ≦ 22 (provided that b ≦ 7.5 and c ≦ 5 are excluded). Characteristic soft magnetic thin film.
は各々原子％を示し、ＭはＣｏ、Ｒｕ、Ｃｒ、Ｖ、Ｎ
ｉ、Ｍｎ、Ｐｄ、Ｉｒ、Ｐｔの少なくとも１種以上を表
わし、ＢはＺｒ、Ｈｆ、Ｔｉ、Ｎｂ、Ｔａ、Ｍｏ、Ｗの
少なくとも１種以上を表わす。）なる組成式で示され、
その組成範囲は ０＜ｍ／ａ＜ 0.3 ０＜ｂ≦２０ ０＜ｃ≦２２ の範囲(但し、ｂ≦7.5かつｃ≦５を除く)であることを
特徴とする軟磁性薄膜。2. Fe am M m B b N c (provided that a, b, c, m
Are atomic% respectively, M is Co, Ru, Cr, V, N
i, Mn, Pd, Ir and Pt represent at least one kind, and B represents at least one kind of Zr, Hf, Ti, Nb, Ta, Mo and W. ) Is represented by the composition formula,
A soft magnetic thin film having a composition range of 0 <m / a <0.30 <b ≦ 200 <c ≦ 22 (excluding b ≦ 7.5 and c ≦ 5).
ｂ、ｃ、ｄ、ｅは各々原子％を示し、ＸはＺｒ及びＨｆ
の少なくとも１種以上を表わし、ＺはＣｒ、Ｖ及びＭｎ
の少なくとも１種以上を表わす。）なる組成式で示さ
れ、その組成範囲は ０＜ｂ≦２０ ０＜ｃ≦２２ ０＜ｄ≦１０ ０＜ｅ≦５ の範囲(但し、ｂ≦7.5かつｃ≦５を除く)であることを
特徴とする軟磁性薄膜。3. Fe ade X b N c Ru d Z e (provided that a,
b, c, d and e each represent atomic%, X represents Zr and Hf
Of at least one of Z, Cr, V and Mn.
Of at least one of ), And the composition range is 0 <b ≦ 20 0 <c ≦ 2 20 <d ≦ 10 0 <e ≦ 5 (excluding b ≦ 7.5 and c ≦ 5). A soft magnetic thin film.
一が ２≦ｂ≦１５ ５≦ｃ≦２２ 0.1≦ｄ≦１０ 0.1≦ｅ≦５ の範囲に属することを特徴とする請求項３に記載の軟磁
性薄膜。4. At least one of said b, c, d and e belongs to the range of 2 ≦ b ≦ 15 5 ≦ c ≦ 22 0.1 ≦ d ≦ 10 0.1 ≦ e ≦ 5. 3. The soft magnetic thin film described in 3.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3203696A JP2784105B2 (en) | 1990-07-27 | 1991-07-19 | Soft magnetic thin film |
| US07/878,624 US5421915A (en) | 1989-01-26 | 1992-05-05 | Method for preparing same and magnetic head |
| US08/775,518 US5772797A (en) | 1989-01-26 | 1997-01-02 | Soft magnetic thin film, method for preparing same and magnetic head |
| US08/957,791 US6238492B1 (en) | 1989-01-26 | 1997-10-24 | Soft magnetic thin film, method for preparing same and magnetic head |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2-200310 | 1990-07-27 | ||
| JP20031090 | 1990-07-27 | ||
| JP2-269452 | 1990-10-09 | ||
| JP26945290 | 1990-10-09 | ||
| JP3-138561 | 1991-05-15 | ||
| JP13856191 | 1991-05-15 | ||
| JP3203696A JP2784105B2 (en) | 1990-07-27 | 1991-07-19 | Soft magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0529143A true JPH0529143A (en) | 1993-02-05 |
| JP2784105B2 JP2784105B2 (en) | 1998-08-06 |
Family
ID=27472153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3203696A Expired - Fee Related JP2784105B2 (en) | 1989-01-26 | 1991-07-19 | Soft magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2784105B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652436A (en) * | 2020-12-16 | 2021-04-13 | 中国科学院宁波材料技术与工程研究所 | High-frequency soft magnetic material and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6357758A (en) * | 1986-08-26 | 1988-03-12 | Matsushita Electric Ind Co Ltd | Nitriding magnetic alloy film |
| JPH02218006A (en) * | 1989-02-17 | 1990-08-30 | Matsushita Electric Ind Co Ltd | Magnetic head and production thereof |
| JPH03132005A (en) * | 1989-10-18 | 1991-06-05 | Hitachi Ltd | Magnetic thin film and magnetic head using this film |
| JPH03188603A (en) * | 1989-09-25 | 1991-08-16 | Tdk Corp | Soft magnetic thin-film and magnetic head |
| JPH0410402A (en) * | 1990-04-26 | 1992-01-14 | Matsushita Electric Ind Co Ltd | Soft magnetic thin film, its manufacture, and magnetic head |
| JPH0483313A (en) * | 1990-07-25 | 1992-03-17 | Matsushita Electric Ind Co Ltd | Soft magnetic thin film and magnetic head |
-
1991
- 1991-07-19 JP JP3203696A patent/JP2784105B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6357758A (en) * | 1986-08-26 | 1988-03-12 | Matsushita Electric Ind Co Ltd | Nitriding magnetic alloy film |
| JPH02218006A (en) * | 1989-02-17 | 1990-08-30 | Matsushita Electric Ind Co Ltd | Magnetic head and production thereof |
| JPH03188603A (en) * | 1989-09-25 | 1991-08-16 | Tdk Corp | Soft magnetic thin-film and magnetic head |
| JPH03132005A (en) * | 1989-10-18 | 1991-06-05 | Hitachi Ltd | Magnetic thin film and magnetic head using this film |
| JPH0410402A (en) * | 1990-04-26 | 1992-01-14 | Matsushita Electric Ind Co Ltd | Soft magnetic thin film, its manufacture, and magnetic head |
| JPH0483313A (en) * | 1990-07-25 | 1992-03-17 | Matsushita Electric Ind Co Ltd | Soft magnetic thin film and magnetic head |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652436A (en) * | 2020-12-16 | 2021-04-13 | 中国科学院宁波材料技术与工程研究所 | High-frequency soft magnetic material and preparation method thereof |
| CN112652436B (en) * | 2020-12-16 | 2024-05-31 | 中国科学院宁波材料技术与工程研究所 | A high frequency soft magnetic material and preparation method thereof |
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|---|---|
| JP2784105B2 (en) | 1998-08-06 |
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