JPH0530367Y2 - - Google Patents
Info
- Publication number
- JPH0530367Y2 JPH0530367Y2 JP1988063555U JP6355588U JPH0530367Y2 JP H0530367 Y2 JPH0530367 Y2 JP H0530367Y2 JP 1988063555 U JP1988063555 U JP 1988063555U JP 6355588 U JP6355588 U JP 6355588U JP H0530367 Y2 JPH0530367 Y2 JP H0530367Y2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- resistance wire
- wire
- contact hole
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Semiconductor Integrated Circuits (AREA)
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は、Ｄ／Ａ変換回路、或いはＡ／Ｄ変換
回路等に用いられる抵抗線の折返し構造に関す
る。[Detailed Description of the Invention] (a) Industrial Application Field The present invention relates to a folding structure of a resistance wire used in a D/A conversion circuit or an A/D conversion circuit.
(ロ) 従来の技術
一般のＤ／Ａ変換回路は、基準電圧の印加され
る一本の抵抗線が複数に均等分割され、各分割点
にスイツチングトランジスタが接続されて構成さ
れる。その抵抗線は通常Poly−Siで形成され、
回路規模の縮小を図るために基板上に折曲げられ
て形成される。(B) Prior Art A general D/A conversion circuit is constructed by dividing a single resistance line to which a reference voltage is applied into a plurality of equal parts, and connecting a switching transistor to each division point. The resistance wire is usually made of Poly-Si,
It is bent and formed on the substrate in order to reduce the circuit scale.
第３図は、抵抗線の折返し構造を示す平面図で
ある。この図に於いて１１はPoly−Siからなる
抵抗線、１２はAl配線である。抵抗線１１は、
複数が一定間隔をおいて配列形成され、Al配線
１２が絶縁膜を介して抵抗線１１の端部と重畳す
るように形成される。絶縁膜には、抵抗線１１上
を等間隔にコンタクトホール１３ａ，１３ｂが設
けられ、抵抗線１１への接続がなされる。そし
て、抵抗線１１上に設けられた各コンタクトホー
ル１３ａを通して抵抗線１１にスイツチングトラ
ンジスタ（図示せず）が接続され、Ｄ／Ａ変換回
路が構成される。このような抵抗線の折返し構造
では、コンタクトホール１３ａ，１３ｂがひとつ
のフオトマスクに依つて形成できるため、マスク
ずれ等でコンタクトホール１３ａ，１３ｂが所望
の位置からずれた場合でも、各コンタクトホール
１３ａ，１３ｂ間の抵抗値は変化せず、コンタク
トホール１３ａ，１３ｂの位置ずれに依る抵抗値
のばらつきは生じなかつた。しかし、均一に形成
された抵抗線１１上に直接配線を接続すると、抵
抗線１１自体の単位長さあたりの抵抗値のばらつ
きを生じるため、回路特性を劣化させた。 FIG. 3 is a plan view showing the folded structure of the resistance wire. In this figure, 11 is a resistance wire made of Poly-Si, and 12 is an Al wiring. The resistance wire 11 is
A plurality of Al wires 12 are formed in an array at regular intervals, and the Al wires 12 are formed so as to overlap with the end portions of the resistance wires 11 with an insulating film interposed therebetween. Contact holes 13a and 13b are provided in the insulating film at equal intervals on the resistance line 11, and connection to the resistance line 11 is made. A switching transistor (not shown) is connected to the resistance line 11 through each contact hole 13a provided on the resistance line 11, thereby forming a D/A conversion circuit. In such a resistance wire folding structure, the contact holes 13a, 13b can be formed using one photomask, so even if the contact holes 13a, 13b are deviated from the desired position due to mask misalignment, etc., each contact hole 13a, 13b can be formed using a single photomask. The resistance value between contact holes 13b did not change, and no variation in resistance value occurred due to positional deviation between contact holes 13a and 13b. However, when wiring is directly connected to the uniformly formed resistance wire 11, the resistance value per unit length of the resistance wire 11 itself varies, resulting in deterioration of circuit characteristics.
第４図は、配線の接続領域を設けた抵抗線の折
返し構造を示す平面図である。抵抗線２１の側辺
には、スイツチングトランジスタ等を接続するた
めの接続領域２４が抵抗線２１から突出して設け
られ、この接続領域２４上にコンタクトホール２
３ａが形成され、スイツチングトランジスタが接
続される。 FIG. 4 is a plan view showing a folded structure of a resistance wire provided with a wiring connection area. A connection region 24 for connecting a switching transistor or the like is provided on the side of the resistance wire 21 to protrude from the resistance wire 21, and a contact hole 2 is formed on this connection region 24.
3a is formed and a switching transistor is connected thereto.
(ハ) 考案が解決しようとする課題
しかしながら、第４図に示すような構造に於い
て、コンタクトホール２３ａ，２３ｂの位置ずれ
が生じた場合、接続領域２４に設けられたコンタ
クトホール２３ａどうしの間の抵抗値は変化しな
いが、そのコンタクトホール２３ａと抵抗線２１
端部に設けられたコンタクトホール２３ｂとの間
の抵抗値が変化する。即ち、抵抗線２１から突出
して設けられた接続領域２４内でコンタクトホー
ル２３ａに位置がずれた場合は、抵抗線２１上で
コンタクトホール２３ｂの位置がずれた場合に比
して、抵抗値の変動が十分に小さい。従つて、両
方のコンタクトホール２３ａ，２３ｂの位置ずれ
が同じ距離だけ生じた場合でも、その間の抵抗値
が変化する。例えば、第５図に示すようにコンタ
クトホール２３ｂが所望の位置から抵抗線２１の
長さ方向にｌだけずれたとすれば、抵抗値は所望
の値からRs1だけずれることになる。ここでRsは
抵抗線の単位長さあたりの抵抗値である。(c) Problems to be solved by the invention However, in the structure shown in FIG. Although the resistance value of the contact hole 23a and the resistance wire 21 do not change,
The resistance value between the contact hole 23b provided at the end changes. That is, if the contact hole 23a is misaligned within the connection region 24 provided protruding from the resistance wire 21, the resistance value will fluctuate more than when the contact hole 23b is misaligned on the resistance wire 21. is small enough. Therefore, even if both contact holes 23a and 23b are misaligned by the same distance, the resistance value between them changes. For example, if the contact hole 23b deviates from the desired position by l in the length direction of the resistance wire 21 as shown in FIG. 5, the resistance value will deviate from the desired value by Rs1. Here, Rs is the resistance value per unit length of the resistance wire.
(ニ) 課題を解決するための手段
本考案は上述の課題を解決するためになされた
もので、基板上に一定の間隔をおいて配列形成さ
れた複数の抵抗線と、この抵抗線の端部に重畳す
ると共に隣接する抵抗線の端部間に跨つて形成さ
れる金属配線と、を備え、上記金属配線と抵抗線
とが接続されて各抵抗線どうしが接続された抵抗
線の折返し構造に於いて、上記抵抗線端部の接続
点近傍の線幅が抵抗線中央部に比して広く形成さ
れ、上記接続点近傍の単位長さあたりの抵抗値が
低減せしめられたことを特徴とする。(d) Means for solving the problem The present invention was made to solve the above problem, and it uses a plurality of resistance wires arranged at regular intervals on a substrate, and the ends of the resistance wires. and a metal wiring formed overlapping the ends of the resistance wire and spanning between the ends of adjacent resistance wires, the metal wiring and the resistance wire are connected, and each resistance wire is connected to each other. The line width near the connection point at the end of the resistance wire is formed wider than that at the center of the resistance wire, and the resistance value per unit length near the connection point is reduced. do.
(ホ) 作用
本考案に依れば、抵抗線の金属配線との接続点
近傍の線幅を広く形成したことで、接続点近傍の
単位長さあたりの抵抗値を低減させることがで
き、コンタクトホールの位置ずれが生じて抵抗線
と金属配線との接続点がずれた場合に於いても、
各接続点間の抵抗値の変化を最小限にして抵抗値
のばらつきを低減することができる。(E) Effect According to the present invention, by forming the line width near the connection point of the resistance wire with the metal wiring to be wide, the resistance value per unit length near the connection point can be reduced, and the contact Even if the hole position shifts and the connection point between the resistance wire and metal wiring shifts,
Variations in resistance values can be reduced by minimizing changes in resistance values between connection points.
(ヘ) 実施例 本考案の一実施例を図面に従つて説明する。(f) Examples An embodiment of the present invention will be described with reference to the drawings.
第１図は本考案の抵抗線の折返し構造を示す平
面図である。抵抗線１は、第４図と同様にPoly
−Siからなり、側辺には、接続領域４が抵抗線１
から突出して形成され、Al配線２が絶縁膜を介
して抵抗線１の端部に重畳するように形成される
と共に、コンタクトホール３ｂを通して抵抗線１
とAl配線２とが接続される。そして、コンタク
トホール３ａを通して接続領域４にスイツチング
トランジスタが接続されて、Ｄ／Ａ変換回路が構
成される。本考案の特徴とするところは、抵抗線
１端部を中央部に比して線幅を広く形成したこと
にある。即ち、Al配線２が接続される抵抗線１
の端部の線幅を中央部に比して広く形成すること
に依つて、抵抗線１の単位長さあたりの抵抗値を
低減させ、コンタクトホール３ｂの位置がずれた
場合に於いても、接続領域４に設けられたコンタ
クトホール３ａと抵抗線１端部に設けられたコン
タクトホール３ｂとの間の抵抗値の変化を最小限
にするものである。 FIG. 1 is a plan view showing the folded structure of the resistance wire of the present invention. Resistance wire 1 is Poly as shown in Figure 4.
-Si, and the connection area 4 is connected to the resistance wire 1 on the side.
The Al wiring 2 is formed so as to overlap the end of the resistance wire 1 through the insulating film, and the Al wiring 2 is formed to protrude from the resistance wire 1 through the contact hole 3b.
and Al wiring 2 are connected. Then, a switching transistor is connected to the connection region 4 through the contact hole 3a, thereby forming a D/A conversion circuit. The feature of the present invention is that the end portion of the resistance wire 1 is formed to have a wider line width than the central portion. That is, the resistance wire 1 to which the Al wiring 2 is connected
By making the line width at the end part wider than that at the center part, the resistance value per unit length of the resistance wire 1 can be reduced, and even if the position of the contact hole 3b is shifted, This minimizes the change in resistance value between the contact hole 3a provided in the connection region 4 and the contact hole 3b provided at the end of the resistance line 1.
第１図に示す抵抗の折返し構造に於いて、第２
図に示すように、抵抗線１の長さ方向にコンタク
トホール３ｂの位置がｌだけずれた場合には、抵
抗値の変化はRs′l′となる。抵抗線１の層厚が均
一であるとすれば抵抗線１の単位長さあたりの抵
抗値Rsは線幅に反比例するため、例えば抵抗線
１の端部を中央部の３倍に形成すれば抵抗線１端
部の単位長さあたりの抵抗値Rs′は、Rsの1/3と
なる。従つて、コンタクトホール３ｂの位置ずれ
の距離ｌが同じ場合でも、抵抗値の変化が第４図
に示す構造の場合に比して1/3となる。コンタク
トホール３ｂは、抵抗線１の幅方向に細長く形成
され、そのコンタクトホール３ｂの抵抗線１に於
ける長さ方向の位置に依つて抵抗値が決まるた
め、抵抗線の幅方向へのコンタクトホール３ｂの
位置ずれは抵抗値に影響しない。 In the folded structure of the resistor shown in Figure 1, the second
As shown in the figure, when the position of the contact hole 3b is shifted by l in the length direction of the resistance wire 1, the change in resistance value becomes Rs'l'. If the layer thickness of resistance wire 1 is uniform, the resistance value Rs per unit length of resistance wire 1 is inversely proportional to the line width. The resistance value Rs' per unit length of one end of the resistance wire is 1/3 of Rs. Therefore, even if the displacement distance l of the contact hole 3b is the same, the change in resistance value will be 1/3 compared to the structure shown in FIG. 4. The contact hole 3b is formed long and thin in the width direction of the resistance line 1, and the resistance value is determined depending on the position of the contact hole 3b in the length direction of the resistance line 1. The positional shift of 3b does not affect the resistance value.
尚、本実施例に於いては、Ｄ／Ａ変換回路に本
考案を用いた場合を示したが、基板上に抵抗線が
折曲げられて配線される回路構成、例えばＡ／Ｄ
変換回路等に用いることができる。 In this example, a case where the present invention is used in a D/A conversion circuit is shown, but a circuit configuration in which a resistance wire is bent and wired on a board, for example, an A/D converter circuit is shown.
It can be used for conversion circuits, etc.
(ト) 考案の効果
本考案に依れば、抵抗線端部の接続点近傍の線
幅を中央部に比して広く形成して単位長さあたり
の抵抗値を低減させたことで、コンタクトホール
の位置ずれに依つて抵抗線と金属配線との接続点
がずれても各コンタクトホール間の抵抗値の変化
を最小限にできるため、抵抗値のばらつきを防止
でき、回路特性の向上が図れる。(G) Effect of the invention According to the invention, the resistance value per unit length is reduced by forming the line width near the connection point at the end of the resistance wire to be wider than that at the center. Even if the connection point between the resistance wire and the metal wiring shifts due to hole misalignment, the change in resistance value between each contact hole can be minimized, preventing variations in resistance value and improving circuit characteristics. .
第１図及び第２図は本考案の一実施例を示し、
第１図は平面図、第２図は抵抗線端部の拡大平面
図である。第３図及び第４図は従来の抵抗線の折
返し構造を示す平面図、第５図は第４図の抵抗線
端部の拡大平面図である。
１，１１，２１……抵抗線、２，１２，２２…
…Al配線、３ａ，３ｂ，１３ａ，１３ｂ，２３
ａ，２３ｂ……コンタクトホール、４，２４……
接続領域。
1 and 2 show an embodiment of the present invention,
FIG. 1 is a plan view, and FIG. 2 is an enlarged plan view of the end of the resistance wire. 3 and 4 are plan views showing a conventional folded structure of a resistance wire, and FIG. 5 is an enlarged plan view of the end portion of the resistance wire in FIG. 1, 11, 21...resistance line, 2, 12, 22...
...Al wiring, 3a, 3b, 13a, 13b, 23
a, 23b...contact hole, 4, 24...
connection area.
Claims (1)
数の抵抗線と、この抵抗線の端部に重畳すると共
に隣接する抵抗線の端部間に跨つて形成される金
属配線と、を備え、上記金属配線と抵抗線とが接
続されて各抵抗線どうしが接続された抵抗線の折
返し構造に於いて、上記抵抗線への接続を得る接
続領域が上記抵抗線の少なくとも一側辺側に突出
して設けられると共に、上記抵抗線端部の上記金
属配線との接続部分近傍の線幅が抵抗線中央部に
比して広く形成され、上記接続点近傍の単位長さ
あたりの抵抗値が低減せしめられたことを特徴と
する抵抗線の折返し構造。 A plurality of resistance wires arranged on a substrate at regular intervals, and a metal wiring formed overlapping the ends of the resistance wires and spanning between the ends of adjacent resistance wires, In the folded resistance wire structure in which the metal wiring and the resistance wire are connected and the resistance wires are connected to each other, a connection region for connecting to the resistance wire protrudes from at least one side of the resistance wire. In addition, the line width near the connection portion of the end portion of the resistance wire with the metal wiring is formed wider than the center portion of the resistance wire, and the resistance value per unit length near the connection point is reduced. The folded structure of the resistance wire is characterized by the fact that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988063555U JPH0530367Y2 (en) | 1988-05-13 | 1988-05-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988063555U JPH0530367Y2 (en) | 1988-05-13 | 1988-05-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01167057U JPH01167057U (en) | 1989-11-22 |
| JPH0530367Y2 true JPH0530367Y2 (en) | 1993-08-03 |
Family
ID=31289050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988063555U Expired - Lifetime JPH0530367Y2 (en) | 1988-05-13 | 1988-05-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0530367Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2988357B2 (en) * | 1996-02-19 | 1999-12-13 | 日本電気株式会社 | Resistance circuit |
| JP4553722B2 (en) * | 2003-12-24 | 2010-09-29 | Ｏｋｉセミコンダクタ株式会社 | Resistance divider circuit and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5720163U (en) * | 1980-07-08 | 1982-02-02 | ||
| JPS59161858A (en) * | 1983-03-07 | 1984-09-12 | Nec Ic Microcomput Syst Ltd | semiconductor integrated circuit |
| JPS61182251A (en) * | 1985-02-08 | 1986-08-14 | Nec Corp | semiconductor equipment |
-
1988
- 1988-05-13 JP JP1988063555U patent/JPH0530367Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01167057U (en) | 1989-11-22 |
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