JPS6363152A - Production of optical recording medium - Google Patents
Production of optical recording mediumInfo
- Publication number
- JPS6363152A JPS6363152A JP61208195A JP20819586A JPS6363152A JP S6363152 A JPS6363152 A JP S6363152A JP 61208195 A JP61208195 A JP 61208195A JP 20819586 A JP20819586 A JP 20819586A JP S6363152 A JPS6363152 A JP S6363152A
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- tellurium
- nitrogen
- recording
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 239000011669 selenium Substances 0.000 claims abstract description 13
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 12
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910001370 Se alloy Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
−本発明はレーザ光によって情報を記録再生することの
できる光記録媒体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] - The present invention relates to a method of manufacturing an optical recording medium on which information can be recorded and reproduced using laser light.
[従来の技術]
する光デイスクメモリは、記録密度が高いことから大容
量記録装置として優れた特徴を有している。[Prior Art] Optical disk memories have excellent characteristics as large-capacity recording devices because of their high recording density.
この光記録媒体材料としては、最初にタンタルと鉛が使
用された(サイエンス(Science)154.15
50゜1966) )。それ以来様々の材料が使用され
ているが、テルル(Te)等のカルコゲン元素またはこ
れらの化合物はよく使用されてあり(特公昭47−26
897号公報)、とくにテルル−セレン系合金はよく使
用されている(特公昭54−41902号公報、特公昭
57−7919号公報、特公昭57−56058号公報
)。Tantalum and lead were first used as optical recording medium materials (Science 154.15
50°1966)). Since then, various materials have been used, but chalcogen elements such as tellurium (Te) or their compounds are often used (Japanese Patent Publication No. 47-26
In particular, tellurium-selenium alloys are often used (Japanese Patent Publications No. 41902/1982, 7919/1989, and 56058/1989).
近年、記録装置を小型化するため、レーザ光源としては
半導体レーザが使用されてきている。半導体レーザは発
振波長がaooo人前後であるが、テルル−セレン系合
金はこの波長帯にも比較的よく適合し、適度な反射率と
適度な吸収率が得られる(フィジカ・スティタス・ソリ
ダイ(phys、 5tat。In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around aooo, but tellurium-selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption (physica status solidi). , 5tat.
sol、 7.189.1964) )。sol, 7.189.1964)).
このテルル−セレン系合金を光記録層として用いた光記
録媒体は第1図に示すような構成になっ+rJ Xr
−1−f−モ4− fit蚤C’1l−IT來位+
?二11.11. Jwl。An optical recording medium using this tellurium-selenium alloy as an optical recording layer has a structure as shown in Figure 1.
-1-f-mo4- fit flea C'1l-IT next position +
? 211.11. Jwl.
ン系合金よりなる記録層21が設けられている。記録用
レーザ光は基板1を通して記録層21に集光照射され、
ピット22が形成される。基板1としてはポリカーボネ
ート、ポリオレフィン、ポリメチルペンテン、アクリル
、エポキシ樹脂等の合成樹脂やガラスが使用され、基板
1にはピットが同心円状あるいはスパイラル状に一定間
隔で精度よく記録されるように通常案内溝が設けられて
いる。A recording layer 21 made of a carbon-based alloy is provided. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1,
A pit 22 is formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentene, acrylic, or epoxy resin, or glass, and is usually guided so that pits are recorded concentrically or spirally at regular intervals with high accuracy. A groove is provided.
レーザビーム径程度の幅の溝に光が入射すると光は回折
され、ビーム中心が溝からずれるにつれて回折光強度の
空間分布が変化するので、これを検出してレーザビーム
を溝の中心に入射させるようにサーボ系が構成されてい
る。溝の幅は通常0.3〜1.3Aunであり、溝の深
さは使用するレーザ波長の1712から174の範囲に
設定される。集光に関しても同様にサーボ系が構成され
ている。情報の読み出しは、記録のときよりも弱いパワ
ーのレーザ光をピット上を通過するように照射すること
により、ピットの有無に起因する反射率の変化を検出し
て行う。When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the intensity of the diffracted light changes.This is detected and the laser beam is directed to the center of the groove. The servo system is configured as follows. The width of the groove is usually 0.3 to 1.3 Aun, and the depth of the groove is set within the range of 1712 to 174 of the laser wavelength used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a weaker power than during recording so as to pass over the pits, and detecting changes in reflectance caused by the presence or absence of pits.
[発明が解決しようとする問題点]
しかしながら、テルル−セレン合金層を記録層として用
いた光記録媒体では耐候性と感度と信号品質のすべてを
満足するものではなかった。[Problems to be Solved by the Invention] However, optical recording media using a tellurium-selenium alloy layer as a recording layer do not satisfy all of weather resistance, sensitivity, and signal quality.
本発明は以上のような問題点を解決するためになされた
もので、耐候性がよく、かつ高感度で信号品質が良好で
安定な光記録媒体の製造方法を提供することを目的とす
る。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing an optical recording medium that has good weather resistance, high sensitivity, good signal quality, and stability.
[問題点を解決するための手段]
本発明は基板上に、レーザ光によって一部が選択的に除
去されて情報を記録する記録層を形成することよりなる
光記録媒体の製造方法において、前記記録層中に、テル
ルとセレンを含む物質をターゲットとし、窒素ガスおよ
び水素ガスを含むガス中でスパッタリングしてテルルと
セレンと窒素とを主成分とする層を少なくとも設けるこ
とを特徴とする光記録媒体の製造方法である。[Means for Solving the Problems] The present invention provides a method for manufacturing an optical recording medium, which comprises forming a recording layer on a substrate, a portion of which is selectively removed by a laser beam to record information. Optical recording characterized in that at least a layer containing tellurium, selenium, and nitrogen as main components is provided in the recording layer by sputtering a substance containing tellurium and selenium as a target in a gas containing nitrogen gas and hydrogen gas. This is a method for producing a medium.
テルルとセレンと窒素とを主成分とする層(以下、テル
ル−セレン−窒素層と略す)の厚さは100人からi
ooo人の範囲が記録再生特性の観点から望ましく、セ
レンの含有量は原子数パーセントで2パーセントから5
0パーセントの範囲が記録再生特性、耐候性の観点から
望ましく、窒素の含有量は原子数パーセントで2パ一セ
ント以上20パーセント未満が記録再生特性、耐候性の
観点から望ましい。また、テルル−セレン−窒素層中の
元素の組成比は、ターゲットの組成比や窒素(N2)ガ
スと水素(N2)ガスのガス分圧に依存するのは勿論で
あるが、スパッタ装置の大きさくスパッタ室の表面積等
)ヤスバッタ時間等にも依存するので、所望の記録膜組
成を得るためには各スパッタ装置ごとにN2ガスとN2
ガスの分圧等を適宜設定することが望ましい。The thickness of the layer whose main components are tellurium, selenium, and nitrogen (hereinafter referred to as the tellurium-selenium-nitrogen layer) is from 100 to i
From the viewpoint of recording and reproducing characteristics, the selenium content is preferably in the range of 2 to 5 atomic percent.
A range of 0% is desirable from the viewpoint of recording/reproducing characteristics and weather resistance, and a nitrogen content of 2% or more and less than 20% in terms of atomic percent is desirable from the viewpoint of recording/reproducing characteristics and weather resistance. In addition, the composition ratio of elements in the tellurium-selenium-nitrogen layer naturally depends on the composition ratio of the target and the gas partial pressures of nitrogen (N2) gas and hydrogen (N2) gas, but it also depends on the size of the sputtering equipment. The surface area of the sputtering chamber, etc.) depends on the sputtering time, etc., so in order to obtain the desired recording film composition, N2 gas and N2 gas must be used for each sputtering device.
It is desirable to set the gas partial pressure etc. appropriately.
テルルとセレンと窒素とを主成分とする層には、鉛、ア
ンチモン、ヒ素、イオウ、スズ、ゲルマニウム、タリウ
ム、リン、カドミウム、インジウム、ガリウム、亜鉛、
ビスマス、アルミニウム、銅、銀、マグネシウム、タン
タル、金、パラジウム、コバルトの群から選ばれた少な
くとも1種の元素が添加されていてもよい。この場合、
ピットの形状を良好に整える場合がある。ただし、添加
量は原子数パーセントで20パ一セント未満が望ましい
。The layer mainly composed of tellurium, selenium, and nitrogen contains lead, antimony, arsenic, sulfur, tin, germanium, thallium, phosphorus, cadmium, indium, gallium, zinc,
At least one element selected from the group consisting of bismuth, aluminum, copper, silver, magnesium, tantalum, gold, palladium, and cobalt may be added. in this case,
In some cases, the shape of the pit can be improved. However, the amount added is preferably less than 20 percent in terms of atomic percent.
スパッタガスはN2ガスとN2ガスのみでもよいが、放
電や成膜の安定性の観点からは不活性ガスとの混合ガス
が望ましい。また、ざらにその他のガスを混合してもよ
い。The sputtering gas may be N2 gas or only N2 gas, but from the viewpoint of stability of discharge and film formation, a mixed gas with an inert gas is preferable. Further, other gases may be mixed into the mixture.
テルル−セレン−窒素層と基板との間に、酸化物、窒化
物、フッ化物、炭化物、硫化物またはホウ化物で形成さ
れた層を少なくとも1層設けてもよい。この場合記録パ
ワー変動に対する余裕度が大きくなり、トラッキングや
フォーカスのサーボが安定になることがある。At least one layer formed of an oxide, nitride, fluoride, carbide, sulfide or boride may be provided between the tellurium-selenium-nitrogen layer and the substrate. In this case, there is a greater margin for recording power fluctuations, and tracking and focusing servo may become more stable.
また、基板としてはポリカーボネート、ポリオレフィン
、ポリメチルペンテン、アクリル、エポキシ樹脂等の合
成樹脂やガラスなど通常使用されているものが用いられ
る。Further, as the substrate, commonly used materials such as synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic and epoxy resins, and glass are used.
[実施例] 以下本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
100 ’Cで2時間アニール処理した内径15mm、
外径130m1厚ざ1.2mmの案内溝付きポリカーポ
ネ−ト樹脂ディスク基板上に、テルル−セレン合金ター
ゲットをアルゴン(Ar>とN2とN2どの混合ガスで
マグネトロンスパッタして、テルル(Te)とセレン(
Se)と窒素(N)の比が原子数パーセントで85対9
対6のテルル−セレン−窒素層を約240人厚形成し、
しかる後、温度85℃、相対湿度90%の環境に12時
間保存して光記録媒体を作製した。この光ディスクの波
長8300八における基板入射の反射率を測定したとこ
ろ、約26%であった。波長8300Aの半導体レーザ
光を基板を通して入射して記録層上で1.61J!rI
φ程度に絞り、媒体線速度5.65m/sec 、記録
周波数3.778H2,記録パルス幅70nsec、記
録パワー6、0mWの条件で記録し、0.7mWで再生
した。バンド幅30kH2のキャリアーとノイズとの比
(C/N)は48dBと良好であった。15mm inner diameter, annealed at 100'C for 2 hours.
Tellurium (Te) and selenium were sputtered onto a polycarbonate resin disk substrate with a guide groove of 130 m in outer diameter and 1.2 mm in thickness by magnetron sputtering a tellurium-selenium alloy target with a mixed gas of argon (Ar>, N2, and N2). (
The ratio of Se) to nitrogen (N) is 85:9 in atomic percent
Forming a tellurium-selenium-nitrogen layer of about 240 layers thick,
Thereafter, it was stored for 12 hours in an environment with a temperature of 85° C. and a relative humidity of 90% to produce an optical recording medium. When the reflectance of this optical disk at a wavelength of 8,300 degrees when incident on the substrate was measured, it was approximately 26%. Semiconductor laser light with a wavelength of 8300A is incident through the substrate and 1.61J! rI
Recording was performed under the following conditions: medium linear velocity of 5.65 m/sec, recording frequency of 3.778 H2, recording pulse width of 70 nsec, recording power of 6.0 mW, and reproduction at 0.7 mW. The carrier-to-noise ratio (C/N) with a bandwidth of 30 kHz was as good as 48 dB.
この光ディスクを70’C180%の高温高湿度の環境
に60時間保存した後、上記特性を調べたが変化はなく
、耐候性に優れた光記録媒体であることが確認された。After this optical disc was stored in a high temperature and high humidity environment of 70'C 180% for 60 hours, the above characteristics were examined, but there was no change, and it was confirmed that the optical recording medium had excellent weather resistance.
[発明の効果]
以上説明したように、本発明の方法によれば耐候性がよ
く、かつ高感度で信号品質が良好で安定な光記録媒体を
製造することができる。[Effects of the Invention] As explained above, according to the method of the present invention, it is possible to manufacture a stable optical recording medium with good weather resistance, high sensitivity, and good signal quality.
第1図は光記録媒体の1例を示す部分断面図である。 1・・・基板 21・・・記録層 22・・・ピット FIG. 1 is a partial sectional view showing an example of an optical recording medium. 1... Board 21...Recording layer 22...Pit
Claims (1)
されて情報を記録する記録層を形成することよりなる光
記録媒体の製造方法において、前記記録層中に、テルル
とセレンを含む物質をターゲットとし、窒素ガスおよび
水素ガスを含むガス中でスパッタリングしてテルルとセ
レンと窒素とを主成分とする層を少なくとも設けること
を特徴とする光記録媒体の製造方法。(1) A method for manufacturing an optical recording medium comprising forming a recording layer on a substrate, a portion of which is selectively removed by a laser beam to record information, wherein the recording layer contains tellurium and selenium. A method for producing an optical recording medium, which comprises using a substance as a target and sputtering in a gas containing nitrogen gas and hydrogen gas to provide at least a layer containing tellurium, selenium, and nitrogen as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208195A JPS6363152A (en) | 1986-09-03 | 1986-09-03 | Production of optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208195A JPS6363152A (en) | 1986-09-03 | 1986-09-03 | Production of optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6363152A true JPS6363152A (en) | 1988-03-19 |
| JPH048859B2 JPH048859B2 (en) | 1992-02-18 |
Family
ID=16552232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61208195A Granted JPS6363152A (en) | 1986-09-03 | 1986-09-03 | Production of optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6363152A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63171446A (en) * | 1987-01-09 | 1988-07-15 | Mitsubishi Kasei Corp | Method for manufacturing optical recording medium |
-
1986
- 1986-09-03 JP JP61208195A patent/JPS6363152A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63171446A (en) * | 1987-01-09 | 1988-07-15 | Mitsubishi Kasei Corp | Method for manufacturing optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH048859B2 (en) | 1992-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6363153A (en) | Production of optical recording medium | |
| JPS63151486A (en) | Optical recording medium and its production | |
| JPS6363152A (en) | Production of optical recording medium | |
| JP2689429B2 (en) | Optical recording medium | |
| JP2508056B2 (en) | Optical recording medium manufacturing method | |
| JPS6349493A (en) | Optical recording medium and production thereof | |
| JPS6313786A (en) | Optical recording medium | |
| JP2581087B2 (en) | Optical recording medium | |
| JPS62278095A (en) | Optical recording medium | |
| JP2508054B2 (en) | Optical recording medium manufacturing method | |
| JP2508188B2 (en) | Optical recording medium manufacturing method | |
| JP2560711B2 (en) | Optical recording medium | |
| JPH0530390B2 (en) | ||
| JPH051747B2 (en) | ||
| JPS6349494A (en) | Optical recording medium | |
| JPS6314336A (en) | Optical recording medium | |
| JPS6331039A (en) | Optical recording medium | |
| JP2508053B2 (en) | Optical recording medium manufacturing method | |
| JPS6381091A (en) | Optical recording medium | |
| JPH0553018B2 (en) | ||
| JPH0481956B2 (en) | ||
| JPS63151489A (en) | Optical recording medium and its production | |
| JPS6330291A (en) | Optical recording medium | |
| JPS62297182A (en) | Optical recording medium | |
| JPH0481958B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |