JPH053429B2 - - Google Patents

Info

Publication number: JPH053429B2
Authority: JP; Japan
Prior art keywords: diamond; layer; sintered body; cvd; particles
Prior art date: 1985-01-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP60000387A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61163164A (ja

Inventor

Shingo Morimoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Resonac Holdings Corp

Original Assignee

Showa Denko KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-01-08

Filing date

1985-01-08

Publication date

1993-01-14

1985-01-08 Application filed by Showa Denko KK filed Critical Showa Denko KK

1985-01-08 Priority to JP60000387A priority Critical patent/JPS61163164A/ja

1986-07-23 Publication of JPS61163164A publication Critical patent/JPS61163164A/ja

1993-01-14 Publication of JPH053429B2 publication Critical patent/JPH053429B2/ja

Status Granted legal-status Critical Current

Links

239000010432 diamond Substances 0.000 claims description 63
229910003460 diamond Inorganic materials 0.000 claims description 54
238000000034 method Methods 0.000 claims description 17
239000000758 substrate Substances 0.000 claims description 12
239000010419 fine particle Substances 0.000 claims description 6
238000004519 manufacturing process Methods 0.000 claims description 4
239000012808 vapor phase Substances 0.000 claims description 3
239000012071 phase Substances 0.000 claims 1
239000002245 particle Substances 0.000 description 15
229910052751 metal Inorganic materials 0.000 description 8
239000002184 metal Substances 0.000 description 8
239000007789 gas Substances 0.000 description 6
238000000151 deposition Methods 0.000 description 4
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
238000005245 sintering Methods 0.000 description 4
230000008021 deposition Effects 0.000 description 3
239000003292 glue Substances 0.000 description 3
150000002739 metals Chemical class 0.000 description 3
PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
230000005484 gravity Effects 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
230000000704 physical effect Effects 0.000 description 2
238000009832 plasma treatment Methods 0.000 description 2
239000010703 silicon Substances 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
238000005507 spraying Methods 0.000 description 2
229910052719 titanium Inorganic materials 0.000 description 2
239000010936 titanium Substances 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
239000004215 Carbon black (E152) Substances 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
238000005219 brazing Methods 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000003054 catalyst Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
239000002360 explosive Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
230000002706 hydrostatic effect Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
-1 methane and hydrogen Chemical class 0.000 description 1
NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
230000001376 precipitating effect Effects 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
238000004513 sizing Methods 0.000 description 1
230000003068 static effect Effects 0.000 description 1
229910003468 tantalcarbide Inorganic materials 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1

Landscapes

Carbon And Carbon Compounds (AREA)

JP60000387A 1985-01-08 1985-01-08 ダイヤモンド焼結体の製造法 Granted JPS61163164A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60000387A JPS61163164A (ja)	1985-01-08	1985-01-08	ダイヤモンド焼結体の製造法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60000387A JPS61163164A (ja)	1985-01-08	1985-01-08	ダイヤモンド焼結体の製造法

Publications (2)

Publication Number	Publication Date
JPS61163164A JPS61163164A (ja)	1986-07-23
JPH053429B2 true JPH053429B2 (de)	1993-01-14

Family

ID=11472389

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60000387A Granted JPS61163164A (ja)	1985-01-08	1985-01-08	ダイヤモンド焼結体の製造法

Country Status (1)

Country	Link
JP (1)	JPS61163164A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2761511B2 (ja) *	1988-07-18	1998-06-04	日本油脂株式会社	超微粒子からなるダイヤモンド焼結体およびその製造方法
JP2520971B2 (ja) *	1990-05-18	1996-07-31	住友電気工業株式会社	ボンディングツ―ル

1985
- 1985-01-08 JP JP60000387A patent/JPS61163164A/ja active Granted

Also Published As

Publication number	Publication date
JPS61163164A (ja)	1986-07-23

Publication	Publication Date	Title
JP3472622B2 (ja)	2003-12-02	研磨剤成形体の製造方法
CA2005518A1 (en)	1990-07-12	Making diamond composite coated cutting tools
JPS5819428B2 (ja)	1983-04-18	研摩用物体及びその製造方法
JPH07178670A (ja)	1995-07-18	研磨剤コンパクトの製造法
GB2213414A (en)	1989-08-16	Brazing diamond to a substrate
JPS6247670B2 (de)	1987-10-08
KR20050072753A (ko)	2005-07-12	소결 지지된 다결정성 다이아몬드 압분체의 제조방법
JPH0624898A (ja)	1994-02-01	多層ｃｖｄダイヤモンド薄膜
EP0320657A1 (de)	1989-06-21	Verfahren zur Züchtung von Diamant
JPH0791651B2 (ja)	1995-10-04	ダイヤモンド被覆炭化タングステン基超硬合金製切削工具チツプ
JPH053429B2 (de)	1993-01-14
JPS61151095A (ja)	1986-07-09	ダイヤモンド合成法
JPH0558784A (ja)	1993-03-09	ダイヤモンドの析出方法
JPH0568548B2 (de)	1993-09-29
JP2003527293A (ja)	2003-09-16	ダイアモンド用およびダイアモンド含有材料用の接着性複合被膜および前記被膜の製造方法
Avigal et al.	1999	A new method for nucleation enhancement of diamond
JPH04157157A (ja)	1992-05-29	人工ダイヤモンド被覆材の製造方法
JP2797612B2 (ja)	1998-09-17	高い付着強度を有する人工ダイヤモンド被覆硬質焼結工具部材
JP3260157B2 (ja)	2002-02-25	ダイヤモンド類被覆部材の製造方法
JP3199127B2 (ja)	2001-08-13	ダイヤモンド含有複合体被覆部材およびその製造方法
JPH01317112A (ja)	1989-12-21	高強度多結晶ダイヤモンド及びその製造方法
JP2686970B2 (ja)	1997-12-08	膜状ダイヤモンドの製造方法
JPH03219079A (ja)	1991-09-26	ダイヤモンド被覆炭化タングステン基超硬合金切削工具の製造法
JP2633968B2 (ja)	1997-07-23	ダイヤモンド被覆材及びその製造法
JP2702979B2 (ja)	1998-01-26	複合ダイヤモンド粒の製造方法