JPH0536865U - Thin film substrate - Google Patents

Thin film substrate

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Publication number
JPH0536865U
JPH0536865U JP8302091U JP8302091U JPH0536865U JP H0536865 U JPH0536865 U JP H0536865U JP 8302091 U JP8302091 U JP 8302091U JP 8302091 U JP8302091 U JP 8302091U JP H0536865 U JPH0536865 U JP H0536865U
Authority
JP
Japan
Prior art keywords
thin film
base material
resin
substrate
film substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8302091U
Other languages
Japanese (ja)
Inventor
学 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
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Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8302091U priority Critical patent/JPH0536865U/en
Publication of JPH0536865U publication Critical patent/JPH0536865U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 薄膜基板に使用する絶縁基材の表面に形成す
る感光性樹脂薄膜の厚さを一様なものとする基材構造を
得る。 【構成】 基材1の表面の全外周部にテーパー8を設け
たもので、この面に樹脂溶液を用いてスピンコートする
と膜厚の均一な樹脂薄膜2が得られる、薄膜基板はこの
樹脂薄膜2を基体としてこの上に導体薄膜パターンを形
成している。
(57) [Summary] [Objective] To obtain a base material structure in which a photosensitive resin thin film formed on the surface of an insulating base material used for a thin film substrate has a uniform thickness. [Structure] A taper 8 is provided on the entire outer peripheral portion of the surface of a substrate 1, and a resin thin film 2 having a uniform film thickness can be obtained by spin coating a resin solution on this surface. 2 is used as a base, and a conductor thin film pattern is formed thereon.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial application]

本考案は薄膜基板に関し、特に電子部品を搭載するために使用する薄膜基板に 関するものである。 The present invention relates to a thin film substrate, and more particularly to a thin film substrate used for mounting electronic components.

【0002】[0002]

【従来の技術】[Prior art]

図4及び図5は従来の薄膜基板の一連の製造工程を示す要部模式断面図である 。図4は工程順に工程A〜Eを示し、図5は図4に続く工程F〜Iを示す。なお 、工程Iに示す断面図が従来の薄膜基板の基準構成を示すものである。 4 and 5 are schematic cross-sectional views of a main part showing a series of conventional manufacturing steps of a thin film substrate. 4 shows steps A to E in the order of steps, and FIG. 5 shows steps F to I following FIG. The cross-sectional view shown in step I shows the reference configuration of the conventional thin film substrate.

【0003】 図4,図5において、シリコン、セラミック等からなる板状絶縁性の基材1( 工程A)上に、後述のスピンコート法により感光性の樹脂薄膜2を形成し、(工 程B)、その上に、ガラス板にCrなどの金属薄膜により数μ〜数10μの導体 パターンのネガあるいはポジパターンを形成してなるマスク7を密着あるいはマ スクパターン投影し(工程C)、紫外線あるいは電子線等を照射することにより 感光性の樹脂薄膜2中にマスク7のネガあるいはポジ潜像2aを形成する(工程 C)。In FIGS. 4 and 5, a photosensitive resin thin film 2 is formed on a plate-shaped insulating substrate 1 (step A) made of silicon, ceramics or the like by a spin coating method described later, and B), and a mask 7 formed by forming a negative or positive pattern of a conductor pattern of several μ to several tens of μ on a glass plate by a thin metal film such as Cr is adhered or mask-pattern projected onto it (step C), and ultraviolet rays are applied. Alternatively, the negative or positive latent image 2a of the mask 7 is formed in the photosensitive resin thin film 2 by irradiating with an electron beam or the like (step C).

【0004】 ついで、感光性の樹脂薄膜2とその中に形成されたネガあるいはポジ潜像2a の感光性樹脂の現像液に対する溶解度の差を利用して数μ〜数10μの微細な樹 脂パターン2bを現像した(工程D)。さらに、スパッタあるいは蒸着により全 面に数100A(オングストローム)のCu等の金属導体薄膜3を形成してメッ キ電極とした後、このメッキ電極上にメッキレジスト薄膜4を形成した(工程E )。メッキレジスト薄膜4上に前述と同様にしてマスク7aを密着あるいはマス クパターン投影し、紫外線あるいは電子線を照射して、メッキレジスト薄膜4中 にマスク7aのネガあるいはポジ潜像4aを形成し、メッキレジスト薄膜4とネ ガあるいはポジ潜像4aのメッキレジスト現像液の溶解度の差を利用して数μ〜 数10μの微細なメッキレジストパターン4bを形成する(工程G)。Next, by utilizing the difference in solubility of the photosensitive resin thin film 2 and the negative or positive latent image 2a formed therein in the developing solution of the photosensitive resin, a fine resin pattern of several μm to several tens of μm is used. 2b was developed (step D). Further, a metal conductor thin film 3 of several 100 A (angstrom) such as Cu was formed on the entire surface by sputtering or vapor deposition to form a metal electrode, and then a plating resist thin film 4 was formed on this plated electrode (step E). In the same manner as described above, the mask 7a is closely contacted or mask pattern projected on the plating resist thin film 4, and ultraviolet rays or electron beams are irradiated to form a negative or positive latent image 4a of the mask 7a in the plating resist thin film 4. By utilizing the difference in solubility between the plating resist thin film 4 and the negative or positive latent image 4a of the plating resist developing solution, a fine plating resist pattern 4b of several μ to several tens μ is formed (step G).

【0005】 ついで、導体薄膜3のメッキレジストパターン4bの覆われていない領域に電 解メッキによりCu等の厚付金属メッキ層5を形成した後、メッキレジストパタ ーン4bをメッキレジストの溶剤により除去し(工程H)、さらに、金属導体薄 膜3と厚付金属メッキ層5を一括してエッチングを行い、金属導体薄膜3と厚付 金属メッキ層5との厚さの差を利用して露出している金属導体薄膜3のみの部分 を除去し、金属導体薄膜3と厚付金属メッキ層5のみにより形成された数μ〜数 10μの導体パターン6を形成した(工程I)。Then, after forming a thick metal plating layer 5 such as Cu by electroplating on a region of the conductor thin film 3 which is not covered by the plating resist pattern 4b, the plating resist pattern 4b is formed by a solvent of the plating resist. After removing (process H), the metal conductor thin film 3 and the thick metal plating layer 5 are collectively etched, and the difference in thickness between the metal conductor thin film 3 and the thick metal plating layer 5 is used. Only the exposed portion of the metal conductor thin film 3 was removed, and a conductor pattern 6 of several μ to several tens μ formed by only the metal conductor thin film 3 and the thick metal plating layer 5 was formed (step I).

【0006】 以上のような工程A〜Iにより基材1上に一層の導体パターン6を有する薄膜 基板の基準構成の形成が終了するが、実用される薄膜基板は工程Iから工程Bに 戻す工程を所定回繰り返すことにより電子デバイスを搭載するための多層薄膜か らなる薄膜基板の形成を完了する。The steps A to I as described above complete the formation of the standard configuration of the thin film substrate having the conductor pattern 6 on the base material 1. However, a practical thin film substrate is returned from step I to step B. By repeating this step a predetermined number of times, the formation of a thin film substrate composed of a multilayer thin film for mounting an electronic device is completed.

【0007】 ここで、前述のスピンコート法について、図6のスピンコート法による感光性 樹脂の塗布状態の模式説明図を用いて、説明する。すなわち、上記のような製造 工程において、感光性樹脂及びレジスト等の均一な樹脂薄膜を形成する方法とし て、図6に示すように、基材1上に樹脂溶液2dを滴下し、所定時間、所定回転 数で基材1を回転させ、樹脂溶液2dの粘性と回転による遠心力により滴下した 樹脂溶液2dを基材全面に拡げ、さらに遠心力により過剰の樹脂溶液を振り切る 事により均一な例えば感光性樹脂薄膜2を得るスピンコート法が用いられている 。Here, the above-mentioned spin coating method will be described with reference to the schematic explanatory view of the coating state of the photosensitive resin by the spin coating method of FIG. That is, as a method for forming a uniform resin thin film such as a photosensitive resin and a resist in the manufacturing process as described above, as shown in FIG. By rotating the substrate 1 at a predetermined number of revolutions, spreading the dropped resin solution 2d by the viscosity of the resin solution 2d and the centrifugal force due to the rotation, and spreading the excess resin solution by the centrifugal force to even out the photosensitive resin. The spin coating method for obtaining the functional resin thin film 2 is used.

【0008】 なお、上述のスピンコート法では、遠心力により基材1上に滴下した樹脂溶融 2dを基材全面に拡げ、さらに遠心力により余分な樹脂溶液2dを振り切ること で均一な樹脂薄膜2が形成されるが、遠心力と樹脂溶液の粘度との関係から、図 6に示すように、基材1の外周部Bの樹脂薄膜2の膜厚が厚くなる。この樹脂薄 膜2に微細パターンを描くためにはあらかじめフォトマスク7を密着させ、紫外 線あるいは電子線を照射し、樹脂薄膜にフォトマスクパターンのネガあるいはポ ジ潜像2aをつくるが、基材1の中央部Aと基材1の外周部Bとの樹脂2の膜厚 が異なる為、基材1の中央部Aにおいてフォトマスク7と樹脂薄膜2との間にギ ャップ11が生じ、紫外線あるいは電子線を照射した際に紫外線あるいは電子線 の回り込みが発生し、樹脂薄膜2に形成される潜像2aの解像度が低下する。従 来技術では基材1上に滴下した樹脂溶液2dを遠心力により基材1上に拡げた後 、一時的に基材1の回転数を上げ、遠心力により基材1の外周部Bに残った樹脂 を振り切る事により均一な樹脂薄膜2を得ていた。In the above spin coating method, the resin melt 2d dropped on the base material 1 is spread over the entire surface of the base material by the centrifugal force, and the excess resin solution 2d is shaken off by the centrifugal force to form a uniform resin thin film 2 However, due to the relationship between the centrifugal force and the viscosity of the resin solution, the film thickness of the resin thin film 2 on the outer peripheral portion B of the base material 1 becomes thick as shown in FIG. In order to draw a fine pattern on the resin thin film 2, a photomask 7 is brought into close contact with the resin thin film 2 in advance, and an ultraviolet ray or an electron beam is irradiated to form a negative or positive latent image 2a of the photomask pattern on the resin thin film. Since the film thickness of the resin 2 at the central portion A of the base material 1 is different from that at the outer peripheral portion B of the base material 1, a gap 11 is generated between the photomask 7 and the resin thin film 2 at the central portion A of the base material 1 and ultraviolet rays are generated. Alternatively, when the electron beam is irradiated, the ultraviolet rays or the electron beam wraps around, and the resolution of the latent image 2a formed on the resin thin film 2 decreases. In the conventional technique, after the resin solution 2d dropped on the base material 1 is spread on the base material 1 by the centrifugal force, the rotation speed of the base material 1 is temporarily increased and the outer peripheral portion B of the base material 1 is moved by the centrifugal force. A uniform resin thin film 2 was obtained by shaking off the remaining resin.

【0009】[0009]

【考案が解決しようとする課題】[Problems to be solved by the device]

上記のような基本構造からなる従来の薄膜基板では、前項でその製造方法を詳 しく説明したことから明らかなように、以下に示すような解決すべき問題点があ る。 The conventional thin film substrate having the above-described basic structure has the following problems to be solved, as is clear from the detailed description of the manufacturing method in the preceding section.

【0010】 (イ)一時的に基材1の回転数を上げ、基材1の外周部Bに残った樹脂を振り切 り、均一な樹脂薄膜2を得ようとした場合、遠心力だけでは基材1の外周部に残 った樹脂が完全には振り切れず、基材1の中央部Aにおけるフォトマスク7と樹 脂薄膜2間のギャップ11は完全になくならず、紫外線あるいは電子線を照射し た際に紫外線あるいは電子線の回り込みが発生し、樹脂薄膜2に形成される潜像 2aの解像度が低下する。(B) When the number of revolutions of the base material 1 is temporarily increased and the resin remaining on the outer peripheral portion B of the base material 1 is shaken off to obtain a uniform resin thin film 2, the centrifugal force alone is used. The resin remaining on the outer periphery of the base material 1 is not completely shaken off, and the gap 11 between the photomask 7 and the resin thin film 2 in the central portion A of the base material 1 is not completely eliminated, and ultraviolet rays or electron beams are not emitted. When irradiated, ultraviolet rays or electron beams wrap around, and the resolution of the latent image 2a formed on the resin thin film 2 decreases.

【0011】 (ロ)一時的に基材1の回転数を上げ、基材1の外周部Bに残った樹脂を振り切 り、均一な樹脂薄膜2を得ようとした場合基材1の中心部Aの樹脂薄膜2の膜厚 が遠心力により振り切られ、樹脂薄膜2と導体パターン6とを積層した場合、樹 脂薄膜2の膜厚が薄くなりすぎるため積層する導体パターン6の間の電気的絶縁 性が低下する。(B) When the rotation speed of the base material 1 is temporarily increased to shake off the resin remaining on the outer peripheral portion B of the base material 1 to obtain a uniform resin thin film 2, the center of the base material 1 When the film thickness of the resin thin film 2 in the part A is shaken off by the centrifugal force and the resin thin film 2 and the conductor pattern 6 are laminated, the resin thin film 2 becomes too thin and the electrical conductivity between the conductor patterns 6 to be laminated is reduced. Insulation is reduced.

【0012】 本考案は、上記のような問題点すなわち(イ)基材の中央部Aにおけるマスク と樹脂薄膜との密着性不足によるパターンの解像度低下、(ロ)基材の外周部B に残った樹脂薄膜を一時的に回転数を上げて振り切る場合の基材1の中心部Aの 樹脂薄膜2の膜厚の減少による電気的絶縁性の低下という問題を解決するために なされたもので、基材の簡単な加工により上記の解像度及び絶縁性の低下を防止 した薄膜基板を提供することを目的とするものである。The present invention has the above-mentioned problems, that is, (a) the resolution of the pattern is lowered due to insufficient adhesion between the mask and the resin thin film in the central portion A of the base material, and (b) the peripheral portion B of the base material remains. This is done in order to solve the problem that the electrical insulation is deteriorated due to the decrease in the film thickness of the resin thin film 2 in the central portion A of the base material 1 when the rotational speed of the resin thin film is temporarily increased and shaken off. It is an object of the present invention to provide a thin film substrate in which the above-mentioned deterioration in resolution and insulating property is prevented by simple processing of a base material.

【0013】[0013]

【課題を解決するための手段】[Means for Solving the Problems]

本考案に係る薄膜基板は、板状の絶縁性基材の表面に導体薄膜のパターンを形 成してなる電子部品搭載用の薄膜基板の基材表面に加工形状を有するものであっ て、第1の考案では基材表面側の全外周部にテーパーを設けたものであり、第2 の考案は上記のテーパーの代りに段差を設けたものであり、第3の考案は上記の テーパーの代りに溝を設けたものである。 The thin film substrate according to the present invention has a processed shape on the substrate surface of a thin film substrate for mounting electronic parts, which is formed by forming a pattern of a conductive thin film on the surface of a plate-shaped insulating substrate. In the first invention, a taper is provided on the entire outer peripheral portion on the surface side of the base material, in the second invention, a step is provided instead of the above taper, and in the third invention, the above taper is replaced. It has a groove in it.

【0014】[0014]

【作用】[Action]

本考案においては、その第1、第2、第3の考案で、薄膜基板の板状基材全外 周部にあらかじめそれぞれテーパー、段差、溝を設けたものを使用するから、ス ピンコート法によって基材表面に樹脂薄膜を形成する際に、中央から外周部へス ピン拡散した樹脂(溶液)が極めて自然にテーパー部、段差部、溝部へ溜り込む ようになり、基材表面の主要部全面に膜厚の均一の樹脂薄膜が得られる。このた め、後工程におけるマスク面との密着性が向上するから、パターンの解像度は低 下しない。 In the present invention, in the first, second, and third inventions, since the taper, the step, and the groove are provided in advance on the entire outer peripheral portion of the thin film substrate, the spin coat method is used. When the resin thin film is formed on the surface of the base material, the resin (solution) that has been spin-diffused from the center to the outer periphery will naturally collect in the taper part, step part, and groove part, and the entire main part of the base material surface A resin thin film having a uniform film thickness can be obtained. Therefore, the adhesion to the mask surface in the subsequent process is improved, and the pattern resolution is not lowered.

【0015】[0015]

【実施例】【Example】

図1は本考案による第1の実施例基材を説明する模式断面図、図2は同じく第 2の実施例基材を説明する断面図、図3は同じく第3の実施例基材を説明する断 面図である。 FIG. 1 is a schematic sectional view illustrating a first embodiment base material according to the present invention, FIG. 2 is a sectional view illustrating a second embodiment base material, and FIG. 3 is a third embodiment base material. FIG.

【0016】 図1〜3はいずれも基材1の上に感光性の樹脂薄膜2を前述のスピンコート法 により形成した場合に、この樹脂薄膜2とマスク7を密着させた有様を示してい る。FIGS. 1 to 3 each show a state in which the resin thin film 2 and the mask 7 are adhered to each other when the photosensitive resin thin film 2 is formed on the base material 1 by the above-mentioned spin coating method. It

【0017】 まず、図1は基材1の表面側全外周部に外周部へ向うにつれて板厚が薄くなる テーパー8を設けた場合を示したものである。また、図2は基材1の全外周部に 段差9を設けた場合を示した。さらに、図3は基材1の全外周部に極めて近い場 所に溝10を設けた場合を示した。First, FIG. 1 shows a case where a taper 8 whose plate thickness becomes thinner toward the outer peripheral portion is provided on the entire outer peripheral portion on the front surface side of the substrate 1. Further, FIG. 2 shows a case where the step 9 is provided on the entire outer peripheral portion of the substrate 1. Further, FIG. 3 shows a case where the groove 10 is provided in a place extremely close to the entire outer peripheral portion of the substrate 1.

【0018】 以上のように、本考案による薄膜基板の基材の外周部Bに、テーパー8、段差 9又は溝10を設けることにより、樹脂溶液2d(図6参照)がスピンコート法 により拡散した場合、外周部B上の樹脂溶液はスムーズにそれぞれテーパー部、 段差部、溝部へ溜り込むことになるので膜厚の均一な樹脂薄膜2が形成される。 このようにして基材1の外周部Bにおける樹脂の残りがなくなり、基材1の中央 部Aにおけるフォトマスク7と樹脂薄膜2の密着が完全に行なわれることにより 樹脂薄膜2に形成されるフォトマスク7のネガあるいはポジ潜像2aの解像度が 向上する。また、一時的に基材1の回転数を上げ、基材1の外周部Bに残った樹 脂を振り切る操作が省略できる為、基材1の中央部Aの樹脂薄膜2の膜厚が確保 でき、樹脂薄膜2と導体パターン6を積層させた場合の導体パターン6間の電気 的絶縁性が確保できる。このため、本考案による基材1上に形成されたパターン の解像度及び導体パターン間の絶縁性低下という問題のない優れた薄膜基板が得 られる。As described above, by providing the taper 8, the step 9 or the groove 10 on the outer peripheral portion B of the base material of the thin film substrate according to the present invention, the resin solution 2d (see FIG. 6) is diffused by the spin coating method. In this case, the resin solution on the outer peripheral portion B smoothly collects in the taper portion, the step portion, and the groove portion, respectively, so that the resin thin film 2 having a uniform film thickness is formed. In this way, the resin remaining on the outer peripheral portion B of the base material 1 is eliminated, and the photomask 7 and the resin thin film 2 in the central portion A of the base material 1 are completely adhered to each other. The resolution of the negative or positive latent image 2a of the mask 7 is improved. Further, since the operation of temporarily increasing the rotation speed of the base material 1 and shaking off the resin remaining on the outer peripheral portion B of the base material 1 can be omitted, the film thickness of the resin thin film 2 in the central portion A of the base material 1 is secured. It is possible to secure the electrical insulation between the conductor patterns 6 when the resin thin film 2 and the conductor patterns 6 are laminated. Therefore, it is possible to obtain an excellent thin film substrate without the problems of the resolution of the pattern formed on the substrate 1 according to the present invention and the deterioration of the insulation between the conductor patterns.

【0019】[0019]

【考案の効果】[Effect of the device]

以上のように本考案によれば、基材の表面全外周部にテーパー、段差又は溝を 形成し、その上に導体薄膜のパターンを形成した均一厚さの薄膜基板を提供する ことができるから、マスクのネガ又はポジ潜像の解像度が低下しない高解像度で 、かつ、形成された多層の導体パターン間に絶縁不良のない優れた薄膜基板を得 ることができる。 As described above, according to the present invention, it is possible to provide a thin film substrate having a uniform thickness in which a taper, a step, or a groove is formed on the entire outer peripheral surface of a base material, and a conductor thin film pattern is formed on the taper. Thus, it is possible to obtain a high-resolution thin film substrate having a high resolution in which the resolution of a negative or positive latent image of a mask is not deteriorated and having no insulation failure between the formed multilayer conductor patterns.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案による第1の実施例基材を説明する模式
断面図である。
FIG. 1 is a schematic cross-sectional view illustrating a first embodiment substrate according to the present invention.

【図2】本考案による第2の実施例基材を示す模式断面
図である。
FIG. 2 is a schematic cross-sectional view showing a second embodiment substrate according to the present invention.

【図3】本考案による第3の実施例基材を示す模式断面
図である。
FIG. 3 is a schematic cross-sectional view showing a third embodiment substrate according to the present invention.

【図4】従来の薄膜基板の製造工程を示す工程A〜Eの
断面図である。
4A to 4C are cross-sectional views of steps A to E showing steps of manufacturing a conventional thin film substrate.

【図5】図4につづく工程F〜Iの断面図である。5 is a cross-sectional view of steps F to I following FIG.

【図6】スピンコート法による樹脂薄膜形成説明図であ
る。
FIG. 6 is an explanatory view of forming a resin thin film by a spin coating method.

【符号の説明】[Explanation of symbols]

1 基材 2 樹脂薄膜 2a ポジ潜像 2b 樹脂パターン 3 金属導体薄膜 4 メッキレジスト薄膜 4a ポジ潜像 4b メッキレジストパターン 5 厚付金属メッキ層 6 導体パターン 7 マスク 8 テーパー 9 段差 10 溝 11 ギャップ DESCRIPTION OF SYMBOLS 1 base material 2 resin thin film 2a positive latent image 2b resin pattern 3 metal conductor thin film 4 plating resist thin film 4a positive latent image 4b plating resist pattern 5 thick metal plating layer 6 conductor pattern 7 mask 8 taper 9 step 10 groove 11 gap

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 板状の絶縁性基材の表面に導体薄膜のパ
ターンを有してなる電子部品搭載用の薄膜基板であっ
て、 上記基材の表面側の全外周部にテーパーを設けたことを
特徴とする薄膜基板。
1. A thin film substrate for mounting an electronic component, comprising a conductive thin film pattern on the surface of a plate-shaped insulating base material, wherein a taper is provided on the entire outer peripheral portion on the front surface side of the base material. A thin film substrate characterized by the above.
【請求項2】 テーパーの代りに段差を設けたことを特
徴とする請求項1記載の薄膜基板。
2. The thin film substrate according to claim 1, wherein a step is provided instead of the taper.
【請求項3】 テーパーの代りに溝を設けたことを特徴
とする請求項1記載の薄膜基板。
3. The thin film substrate according to claim 1, wherein a groove is provided instead of the taper.
JP8302091U 1991-10-14 1991-10-14 Thin film substrate Pending JPH0536865U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8302091U JPH0536865U (en) 1991-10-14 1991-10-14 Thin film substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8302091U JPH0536865U (en) 1991-10-14 1991-10-14 Thin film substrate

Publications (1)

Publication Number Publication Date
JPH0536865U true JPH0536865U (en) 1993-05-18

Family

ID=13790561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8302091U Pending JPH0536865U (en) 1991-10-14 1991-10-14 Thin film substrate

Country Status (1)

Country Link
JP (1) JPH0536865U (en)

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