JPH053892B2 - - Google Patents
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- Publication number
- JPH053892B2 JPH053892B2 JP59241149A JP24114984A JPH053892B2 JP H053892 B2 JPH053892 B2 JP H053892B2 JP 59241149 A JP59241149 A JP 59241149A JP 24114984 A JP24114984 A JP 24114984A JP H053892 B2 JPH053892 B2 JP H053892B2
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- Prior art keywords
- electrode
- layer
- hydrogen gas
- oxide
- sensor
- Prior art date
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、気体中の水素ガスを検知する水素ガ
スセンサに関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a hydrogen gas sensor that detects hydrogen gas in gas.
従来の技術
従来水素ガスセンサとして知られているものに
は半導体式ガスセンサ、パラジウムゲートFET
ガスセンサ、接触燃焼式ガスセンサ等がある。Conventional technology Conventionally known hydrogen gas sensors include semiconductor gas sensors and palladium gate FETs.
There are gas sensors, catalytic combustion type gas sensors, etc.
半導体ガスセンサは、SnO2、γ−Fe2O3等の
酸化物表面に吸着する還元性ガスによつて酸化物
の抵抗値が変化する現象を利用している。 Semiconductor gas sensors utilize the phenomenon that the resistance value of oxides such as SnO 2 and γ-Fe 2 O 3 changes due to reducing gases adsorbed on the surfaces thereof.
パラジウムゲートFETガスセンサは、
MOSFETのゲートのSiO2の上にパラジウムを付
けて構成され、パラジウムとSiO2との間の電気
二重層の電位が雰囲気の水素ガス濃度と比例関係
にあることを利用してFETで電気二重層の電位
を検出するものである。 Palladium gate FET gas sensor is
It is constructed by attaching palladium on SiO 2 at the gate of MOSFET, and the electric double layer in FET is created by utilizing the fact that the potential of the electric double layer between palladium and SiO 2 is proportional to the hydrogen gas concentration in the atmosphere. It detects the potential of
接触燃焼式ガスセンサは、測温体にガス酸化触
媒を付けてガスを燃焼させ、その発熱による測温
体の温度上昇からガス濃度を知るものである。 A catalytic combustion gas sensor attaches a gas oxidation catalyst to a temperature measuring element to combust the gas, and determines the gas concentration from the temperature rise of the temperature measuring element due to the heat generated.
発明が解決しようとする問題点
上記のような従来の水素ガスセンサは、センサ
のガス感応部を加熱する必要があり、このため消
費電力が大きく、かつセンサのガス感応部と回
路、ケース等の間に断熱空間を必要としセンサの
小型化に限度があつた。Problems to be Solved by the Invention In the conventional hydrogen gas sensor as described above, it is necessary to heat the gas sensing part of the sensor, which consumes a large amount of power, and there is a gap between the gas sensing part of the sensor and the circuit, case, etc. This requires an insulated space, which limits the ability to miniaturize the sensor.
本発明は、以上に鑑み、常温で十分な感度を有
する小型の水素ガスセンサを提供することを目的
とする。 In view of the above, an object of the present invention is to provide a small-sized hydrogen gas sensor that has sufficient sensitivity at room temperature.
問題点を解決するための手段
本発明は、遷移金属の酸化物が水素イオンと反
応して層間化合物を生成することを利用して水素
ガス濃度を測定するもので、遷移金属の酸化物層
と、この酸化物層と接触する第1の電極、及び前
記酸化物層と水素イオン伝導性の固体電解質層を
介して対向させた第2の電極により構成したもの
である。Means for Solving the Problems The present invention measures hydrogen gas concentration by utilizing the fact that transition metal oxides react with hydrogen ions to generate intercalation compounds. , a first electrode in contact with the oxide layer, and a second electrode opposed to the oxide layer via a hydrogen ion conductive solid electrolyte layer.
作 用
層間化合物を作る遷移金属酸化物は多数知られ
ている。WO3、MoO3、TiO2、V2O5、Cr2O3な
どである。WO3を例にとると、水素イオンとの
間に1式の平衡が成立し、層間化合物HxWO3の
抵抗率はxの指数に反比例することが知られてい
る。Effect Many transition metal oxides that form intercalation compounds are known. These include WO 3 , MoO 3 , TiO 2 , V 2 O 5 and Cr 2 O 3 . Taking WO 3 as an example, it is known that one equation of equilibrium is established between it and hydrogen ions, and that the resistivity of the intercalation compound H x WO 3 is inversely proportional to the exponent of x.
WO3+xH++xeHxWO3 (1)
水素ガスが酸化物WO3の表面に吸着して1式
の反応を起こすためには、温度を上げる必要があ
るが、活性なWO3、例えば非晶質WO3の表面に
白金等を薄く付着させると、常温で1式の反応を
起こすことができる。 WO 3 +xH + +xeH x WO 3 (1) In order for hydrogen gas to adsorb onto the surface of the oxide WO 3 and cause the reaction of equation 1, it is necessary to raise the temperature, but if the active WO 3 is When a thin layer of platinum or the like is attached to the surface of solid WO 3 , one type of reaction can occur at room temperature.
一方、酸素の存在下では
HxWO3+x/2・O2→WO3+H2O (2)
なる反応が起こり、xの減少をもたらす。従つて
酸素の存在下での一定の水素ガス濃度によるHx
WO3のx値は酸素のない場合よりも小さい。 On the other hand, in the presence of oxygen, the reaction H x WO 3 +x/2·O 2 →WO 3 +H 2 O (2) occurs, resulting in a decrease in x. Therefore, H x due to a constant hydrogen gas concentration in the presence of oxygen
The x value of WO 3 is smaller than without oxygen.
常温で酸素の存在下において水素ガスに対する
感度を大きくするためには、HxWO3と酸素とを
直接接触しないように分離する必要がある。この
ためにWO3と雰囲気との間に水素イオン伝導体
を設けるが、このことにより水素ガスとWO3と
の接触も断たれるために(1)の反応が起きなくな
る。 In order to increase the sensitivity to hydrogen gas in the presence of oxygen at room temperature, it is necessary to separate H x WO 3 and oxygen so that they do not come into direct contact. For this purpose, a hydrogen ion conductor is provided between WO 3 and the atmosphere, but this also cuts off the contact between hydrogen gas and WO 3 , so that the reaction (1) no longer occurs.
本発明の水素ガスセンサは、基本的に第1図に
示すように、第1の電極1上に遷移金属酸化物層
2を設け、その上に水素イオン伝導性固体電解質
層3を介して第2の電極4を設けた構成である。
なお、5は支持体である。この水素ガスセンサの
基本的動作は、第2の電極4を例えばパラジウム
で構成し、電極4と1との間に電極4が正となる
電圧を印加すると、パラジウムに吸着して解離し
た水素は水素イオン伝導体を介して遷移金属酸化
物層2に到達し、酸化物と反応して層間化合物を
作る。次に2つの電極間に交流電圧を印加して、
2つの電極間のインピーダンスを測定することに
より層間化合物の生成量を知ることができ、従つ
て水素ガス濃度を知ることができる。逆に電極1
を正にして電極1と電極4との間に電圧を印加す
ることにより、層間化合物から水素を引き抜くこ
とができ、センサを再生することができる。この
ようにして本発明の水素ガスセンサは繰り返し使
用することができる。 Basically, the hydrogen gas sensor of the present invention, as shown in FIG. This is a configuration in which electrodes 4 are provided.
In addition, 5 is a support body. The basic operation of this hydrogen gas sensor is that when the second electrode 4 is made of palladium, for example, and a voltage is applied between the electrodes 4 and 1 so that the electrode 4 becomes positive, hydrogen adsorbed to the palladium and dissociated becomes hydrogen. It reaches the transition metal oxide layer 2 via the ion conductor and reacts with the oxide to form an intercalation compound. Next, apply an AC voltage between the two electrodes,
By measuring the impedance between the two electrodes, the amount of intercalation compound produced can be determined, and therefore the hydrogen gas concentration can be determined. Conversely, electrode 1
By applying a voltage between the electrodes 1 and 4 with the voltage positive, hydrogen can be extracted from the intercalation compound, and the sensor can be regenerated. In this way, the hydrogen gas sensor of the present invention can be used repeatedly.
実施例 以下、本発明の実施例を説明する。Example Examples of the present invention will be described below.
実施例 1
ガラス基板上にニツケル−クロム合金を1000Å
蒸着し、その一部に5mm×5mmの面積でWO3を
3000Å蒸着し、更に触媒として白金を20Å蒸着
し、次に6mm×6mmの面積でWO3を完全に被る
ようにSiO2を3000Å蒸着する。次に5mm×5mm
の面積でパラジウムをWO3と同じ位置に400Å蒸
着した。なお、WO3は電子ビームにより1×
10-5Torrで蒸着したもので、非晶質であつた。Example 1 Nickel-chromium alloy with a thickness of 1000Å on a glass substrate
WO 3 was deposited on a part of it in an area of 5 mm x 5 mm.
3000 Å is deposited, platinum is further deposited at 20 Å as a catalyst, and then SiO 2 is deposited at 3000 Å so as to completely cover WO 3 in an area of 6 mm×6 mm. Next 5mm x 5mm
Palladium was evaporated to a thickness of 400 Å in the same position as WO 3 with an area of . In addition, WO 3 is 1×
It was deposited at 10 -5 Torr and was amorphous.
ニツケル−クロム合金電極とパラジウム電極と
の間に振巾0.1V、周波数10KHzの交流を印加して
インピーダンスを測定したところ、10.2KΩであ
つた。次にパラジウム電極を負にして1Vの電圧
を10秒間印加し、上と同様の交流インピーダンス
を測定したところ17.2KΩであつた。次に、この
センサを空気に1%の水素ガスを混合した雰囲気
中におき、ニツケル−クロム合金電極を負にして
1Vの電圧を10秒間印加したのち、交流インピー
ダンスを測定したところ9.6KΩであつた。センサ
を空気中に移しパラジウム電極を負に1Vの電圧
を10秒間印加したのち交流インピーダンスを測定
すると17.1KΩであつた。 When an alternating current with an amplitude of 0.1 V and a frequency of 10 KHz was applied between the nickel-chromium alloy electrode and the palladium electrode and the impedance was measured, it was 10.2 KΩ. Next, a voltage of 1V was applied for 10 seconds with the palladium electrode negative, and the AC impedance was measured in the same way as above, and it was 17.2KΩ. Next, this sensor was placed in an atmosphere of air mixed with 1% hydrogen gas, and the nickel-chromium alloy electrode was turned negative.
After applying a voltage of 1V for 10 seconds, the AC impedance was measured and found to be 9.6KΩ. After moving the sensor into the air and applying a negative voltage of 1V to the palladium electrode for 10 seconds, the AC impedance was measured and found to be 17.1KΩ.
水素ガス濃度を変えて上と同様の測定をした結
果を第2図に示す。 Figure 2 shows the results of measurements similar to those above while changing the hydrogen gas concentration.
実施例 2
酸化モリブデン粉末(99.9%)10gをとり、塩
化白金酸の0.1%水溶液50c.c.中に入れ、撹拌しな
がら水素化ホウ素ナトリウム0.5gを加える。撹
拌を1時間続けたのち、水洗して乾燥する。これ
により白金付酸化モリブデンが作られる。これを
2つに分け、一方は結着剤と溶媒とを混合してア
ルミナ基板上に形成された大きさ5mm×5mmの白
金電極上に5mm×5mmの大きさで印刷し乾燥す
る。この上にリンモリブテン酸水溶液を塗布し40
℃、85%RH中に5時間保持して乾燥する。次に
上の白金付酸化モリブデンに黒鉛と結着剤と溶媒
とを混合したインクでリンモリブテン酸の上に6
mm×6mmの面積で印刷し40℃、85%RH中で乾燥
して第2電極を作る。第2電極が5mm×5mmの寸
法で範囲気に接するよう周囲を常温硬化性エポキ
シ樹脂で被う。Example 2 Take 10 g of molybdenum oxide powder (99.9%), add it to 50 c.c. of a 0.1% aqueous solution of chloroplatinic acid, and add 0.5 g of sodium borohydride while stirring. After stirring for 1 hour, the mixture is washed with water and dried. This produces platinized molybdenum oxide. This is divided into two parts, one of which is printed with a size of 5 mm x 5 mm on a platinum electrode with a size of 5 mm x 5 mm formed on an alumina substrate by mixing a binder and a solvent, and dried. Apply phosphomolybdic acid aqueous solution on top of this for 40 minutes.
Dry by keeping at 85% RH for 5 hours. Next, ink made by mixing graphite, a binder, and a solvent with the platinized molybdenum oxide above is applied to the phosphomolybtenic acid.
Print in an area of mm x 6 mm and dry at 40°C and 85% RH to make the second electrode. The second electrode has dimensions of 5 mm x 5 mm and is covered with room temperature curable epoxy resin so as to be in contact with air.
このセンサを空気中に置き、第2電極を負とし
て白金電極との間に0.5Vを印加したのち、振巾
0.1V、周波数10KHzの交流でインピーダンスを測
定したところ2.3MΩであつた。次にこのセンサ
を水素を1%含む空気中におき、白金電極を負と
して0.5Vの電圧を10秒間印加したのち、振巾
0.1V、周波数10KHzの交流でインピーダンスを測
定したところ125KΩであつた。次にセンサを空
気中に取り出し、白金電極を正として0.5Vの電
圧を印加したのちインピーダンスを測定したとこ
ろ2.3MΩであつた。 Place this sensor in the air, set the second electrode as negative, and apply 0.5V between it and the platinum electrode.
The impedance was measured at 0.1V with a frequency of 10KHz and was 2.3MΩ. Next, place this sensor in air containing 1% hydrogen, apply a voltage of 0.5V with the platinum electrode as negative for 10 seconds, and then
When the impedance was measured with alternating current of 0.1V and frequency of 10KHz, it was 125KΩ. Next, the sensor was taken out into the air, and after applying a voltage of 0.5V with the platinum electrode as positive, the impedance was measured and found to be 2.3MΩ.
上記の例ではタングステンの酸化物を用いた
が、前記のような遷移金属酸化物を用いることが
でき、なかでもモリブデンの酸化物がすぐれてい
る。 Although tungsten oxide was used in the above example, any of the above-mentioned transition metal oxides can be used, and among them, molybdenum oxide is excellent.
発明の効果
本発明によれば、センサを加熱することなく常
温において水素ガスに十分な感度が得られるた
め、消費電力を著しく低減することができ、かつ
センサの温度が高くならないため、付属する電子
回路と一体化することも可能であり、小型の乾電
池等を電源とする小形ガスセンサを構成すること
ができる。Effects of the Invention According to the present invention, sufficient sensitivity to hydrogen gas can be obtained at room temperature without heating the sensor, so power consumption can be significantly reduced. It is also possible to integrate it with a circuit, and it is possible to configure a small gas sensor using a small dry battery or the like as a power source.
第1図は本発明の水素ガスセンサの基本的構成
を示す断面図、第2図はその感度特性を示す図で
ある。
1……第1の電極、2……遷移金属酸化物層、
3……固体電解質層、4……第2の電極。
FIG. 1 is a sectional view showing the basic configuration of the hydrogen gas sensor of the present invention, and FIG. 2 is a diagram showing its sensitivity characteristics. 1... First electrode, 2... Transition metal oxide layer,
3... Solid electrolyte layer, 4... Second electrode.
Claims (1)
する第1の電極と、前記酸化物層の前記第1の電
極が接する面の反対側を覆つて積層された水素イ
オン伝導性の固体電解質層と、前記酸化物層と固
体電解質層との間に形成された触媒層と、前記固
体電解質層を介して前記酸化物層と対抗する第2
の電極とを有することを特徴とする水素ガスセン
サ。 2 酸化物がタングステンまたはモリブデンの酸
化物である特許請求の範囲第1項記載の水素ガス
センサ。[Claims] 1. A transition metal oxide layer, a first electrode in contact with the oxide layer, and a layer laminated to cover the opposite side of the oxide layer to the surface in contact with the first electrode. a hydrogen ion conductive solid electrolyte layer, a catalyst layer formed between the oxide layer and the solid electrolyte layer, and a second catalyst layer that opposes the oxide layer through the solid electrolyte layer.
A hydrogen gas sensor characterized by having an electrode. 2. The hydrogen gas sensor according to claim 1, wherein the oxide is an oxide of tungsten or molybdenum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241149A JPS61118651A (en) | 1984-11-15 | 1984-11-15 | hydrogen gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241149A JPS61118651A (en) | 1984-11-15 | 1984-11-15 | hydrogen gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61118651A JPS61118651A (en) | 1986-06-05 |
| JPH053892B2 true JPH053892B2 (en) | 1993-01-18 |
Family
ID=17069993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59241149A Granted JPS61118651A (en) | 1984-11-15 | 1984-11-15 | hydrogen gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61118651A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5342701A (en) * | 1992-03-30 | 1994-08-30 | 410261 B.C. Ltd. | Transition metal oxide films and gas sensors thereof |
| US8636883B2 (en) * | 2006-03-10 | 2014-01-28 | Element One, Inc. | Monitorable hydrogen sensor system |
| CN109769394B (en) * | 2017-09-04 | 2022-04-22 | 新唐科技日本株式会社 | Gas sensor, method for manufacturing gas sensor, gas detection device, and fuel cell vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938541B2 (en) * | 1979-12-22 | 1984-09-18 | 松下電工株式会社 | Flammable gas detection element |
| JPS58105050A (en) * | 1981-12-17 | 1983-06-22 | Murata Mfg Co Ltd | Humidity-sensitive element |
-
1984
- 1984-11-15 JP JP59241149A patent/JPS61118651A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61118651A (en) | 1986-06-05 |
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