JPH0547608A - Production of solid electrolytic capacitor - Google Patents
Production of solid electrolytic capacitorInfo
- Publication number
- JPH0547608A JPH0547608A JP20182091A JP20182091A JPH0547608A JP H0547608 A JPH0547608 A JP H0547608A JP 20182091 A JP20182091 A JP 20182091A JP 20182091 A JP20182091 A JP 20182091A JP H0547608 A JPH0547608 A JP H0547608A
- Authority
- JP
- Japan
- Prior art keywords
- solid electrolytic
- electrolytic capacitor
- voltage
- atmosphere
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 36
- 239000007787 solid Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 abstract 1
- 229960001763 zinc sulfate Drugs 0.000 abstract 1
- 229910000368 zinc sulfate Inorganic materials 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 thallium ions Chemical class 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012685 gas phase polymerization Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体電解コンデンサの
製造方法に関し、とりわけ、耐湿性能の良好な固体電解
コンデンサの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid electrolytic capacitor, and more particularly to a method for manufacturing a solid electrolytic capacitor having good moisture resistance.
【０００２】[0002]
【従来の技術】一般に固体電解コンデンサは、タンタ
ル、アルミニウム、ニオブ等の弁作用を有する陽極基体
の表面に、誘電体酸化皮膜層、半導体層、および導電体
層を順次形成して積層構造体とし、このように積層した
構造体の固体電解コンデンサ素子をエポキシ樹脂等の外
装材で封口している。そしてこの封口した固体電解コン
デンサは耐湿性テスト等の種々の信頼性テストを行い、
合格したものを製品としている。2. Description of the Related Art Generally, a solid electrolytic capacitor has a laminated structure in which a dielectric oxide film layer, a semiconductor layer and a conductor layer are sequentially formed on the surface of an anode substrate having a valve action such as tantalum, aluminum and niobium. The solid electrolytic capacitor element having such a laminated structure is sealed with an exterior material such as epoxy resin. And this sealed solid electrolytic capacitor is subjected to various reliability tests such as humidity resistance test,
Products that pass are considered as products.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、近年の
電子部品の軽薄短小化に伴い、固体電解コンデンサにお
いても外装材の厚みを出来るだけ薄くすることが望まれ
ている。しかし外装材の厚みを薄くすると外部から湿気
が進入することによって耐湿性が悪くなり、信頼性が低
下するという問題があった。そこで本発明は外装材の厚
みが薄くても耐湿性の良好な固体電解コンデンサを製造
する方法を提供することを目的とする。However, with the recent trend toward lighter, thinner, shorter, and smaller electronic components, it has been desired to reduce the thickness of the exterior material of the solid electrolytic capacitor as much as possible. However, when the thickness of the exterior material is reduced, moisture enters from the outside, resulting in poor moisture resistance and reliability. Therefore, it is an object of the present invention to provide a method for manufacturing a solid electrolytic capacitor having good moisture resistance even if the thickness of the exterior material is thin.
【０００４】[0004]
【課題を解決するための手段】本発明者は、上述した問
題点を解決するために鋭意研究した結果、意外にも高湿
度中に固体電解コンデンサを放置後、高温で電圧印加す
ることにより、耐湿性が大幅に改善されることを見い出
し、本発明を完成させるに到った。Means for Solving the Problems As a result of earnest research to solve the above-mentioned problems, the present inventor has surprisingly found that a solid electrolytic capacitor is left in high humidity and then voltage is applied at high temperature. They have found that the moisture resistance is significantly improved, and have completed the present invention.
【０００５】すなわち、本発明は、弁作用を有する陽極
基体の表面に誘電体酸化皮膜層を形成し、その上に順
次、半導体層および導電体層を形成した後樹脂封口して
コンデンサ素子とし、このコンデンサ素子を相対湿度５
０乃至１００％の雰囲気中に電圧無印加で放置した後、
８０℃以上１８０℃未満の雰囲気中で電圧印加して固体
電解コンデンサを製造する方法にある。That is, according to the present invention, a dielectric oxide film layer is formed on the surface of an anode substrate having a valve action, a semiconductor layer and a conductor layer are sequentially formed on the dielectric oxide film layer, and then a resin is sealed to obtain a capacitor element, Relative humidity 5
After leaving it in an atmosphere of 0 to 100% with no voltage applied,
It is a method for producing a solid electrolytic capacitor by applying a voltage in an atmosphere of 80 ° C. or higher and lower than 180 ° C.
【０００６】以下、本発明について説明する。本発明に
おいて固体電解コンデンサの陽極として用いられる弁作
用を有する陽極基体としては、例えばアルミニウム、タ
ンタルおよびこれらを基質とする合金等、弁作用を有す
る金属がいずれも使用できる。そして陽極基体の形状と
しては、アルミニウムの箔や板状、棒状のタンタル焼結
体がある。The present invention will be described below. As the anode substrate having a valve action which is used as the anode of the solid electrolytic capacitor in the present invention, any metal having a valve action such as aluminum, tantalum and alloys having these as substrates can be used. As the shape of the anode substrate, there are aluminum foil, plate-shaped, and rod-shaped tantalum sintered bodies.
【０００７】陽極基体の表面に設ける誘電体酸化皮膜層
は、弁作用金属の表面上に設けられた他の誘電体酸化物
の層であってもよいが、特に弁作用金属自体の酸化物か
らなる層であることが望ましい。いずれの場合にも酸化
物層を設ける方法としては、電解液を用いた陽極化成法
など従来公知の方法を用いることができる。The dielectric oxide film layer provided on the surface of the anode substrate may be a layer of another dielectric oxide provided on the surface of the valve action metal, but especially from the oxide of the valve action metal itself. It is desirable that the layer is In any case, as a method for providing the oxide layer, a conventionally known method such as an anodization method using an electrolytic solution can be used.
【０００８】次に誘電体酸化皮膜層上に半導体層を形成
させるが、誘電体酸化皮膜層まで形成した部位の一部を
陽極部として設けるか、またはこの部位の一部に陽極リ
ードを接続して陽極部としておく。そして半導体層は、
これらの陽極部とした部位を除いて誘電体酸化皮膜層上
に半導体層を形成する。Next, a semiconductor layer is formed on the dielectric oxide film layer. A part of the part where the dielectric oxide film layer is formed is provided as an anode part, or an anode lead is connected to this part of the part. As the anode part. And the semiconductor layer is
A semiconductor layer is formed on the dielectric oxide film layer except for those portions which are the anode portions.
【０００９】誘電体酸化皮膜層上に設けられる半導体層
の種類には特に制限は無く、従来公知の半導体層が使用
できるが、とりわけ本願出願人の出願による二酸化鉛、
または二酸化鉛と硫酸鉛からなる半導体層（特開昭６２
−２５６４２３号公報、特開昭６３−５１６２１号公
報）が、作製した固体電解コンデンサの高周波性能が良
好なために好ましい。The kind of semiconductor layer provided on the dielectric oxide film layer is not particularly limited, and a conventionally known semiconductor layer can be used. In particular, lead dioxide applied by the applicant of the present application,
Alternatively, a semiconductor layer composed of lead dioxide and lead sulfate (Japanese Patent Laid-Open No. Sho 62-62)
-256423 and JP-A-63-51621) are preferable because the high frequency performance of the produced solid electrolytic capacitor is good.
【００１０】また酸化剤と有機酸を用いて気相重合によ
ってポリアニリン、ポリピロール等の電導性高分子化合
物を半導体層として形成させる方法（特開昭６２−４７
１０９号公報）やタリウムイオンおよび過硫酸イオンを
含んだ反応母液から化学的に酸化第２タリウムを半導体
層として析出させる方法（特開昭６２−３８７１５号公
報）もその一例である。このような半導体層上には、例
えばカーボンペーストおよび／または銀ペースト等の従
来公知の導電ペーストを積層して導電体層が形成され
る。Further, a method of forming a conductive polymer compound such as polyaniline or polypyrrole as a semiconductor layer by gas phase polymerization using an oxidizing agent and an organic acid (JP-A-62-47).
No. 109) and a method of chemically depositing thallium oxide as a semiconductor layer from a reaction mother liquor containing thallium ions and persulfate ions (JP-A-62-38715) are examples thereof. On such a semiconductor layer, a conductor layer is formed by laminating a conventionally known conductive paste such as carbon paste and / or silver paste.
【００１１】次いで導電体層上に陰極リードを導電ペー
スト等で接続し、この素子を単板で、あるいは複数枚積
層するか、または巻回してコンデンサ素子とする。そし
てこのコンデンサ素子はエポキシ樹脂、フェノール樹
脂、アクリレート樹脂などの外装樹脂で封口される。外
装樹脂で封口する方法としてはトランスファ成形、デッ
ピング、ポッティングなどの方法があり、コンデンサ素
子全体を封口する。また一方に開口がある缶内にコンデ
ンサ素子を収容し、エポキシ樹脂等で開口部を封止する
缶封止法でも封口できる。Next, a cathode lead is connected on the conductor layer with a conductive paste or the like, and this element is formed as a single plate, or a plurality of layers is laminated or wound to form a capacitor element. The capacitor element is then sealed with an exterior resin such as epoxy resin, phenol resin, acrylate resin. As a method of sealing with the exterior resin, there are methods such as transfer molding, dipping, and potting, and the entire capacitor element is sealed. Alternatively, the capacitor element may be housed in a can having an opening on one side and the opening may be sealed with an epoxy resin or the like for sealing.
【００１２】次に上述のように樹脂封口された固体電解
コンデンサは相対湿度５０〜１００％の高湿度の雰囲気
中に電圧を印加しない状態で放置する。相対湿度が５０
％未満の雰囲気中で放置しておいても顕著な耐湿性は発
揮しない。また相対湿度５０〜１００％の雰囲気中に電
圧を印加して放置すると、不良品でもあたかも漏れ電流
値が良好な製品のようになってしまい、後述する高温の
雰囲気中で電圧を印加した状態で漏れ電流のテストをし
ても良品と不良品を判別することが困難となる。そして
最終的な耐湿テスト時に劣化を引きおこす可能性がある
ため不都合である。一方、高湿度中に、固体電解コンデ
ンサを放置する時間は使用する陽極基体の種類、大きさ
等によって最適値が変化するため、予備実験によって求
められるが一般には数日以内である。Next, the solid electrolytic capacitor sealed with the resin as described above is left in an atmosphere of high humidity with a relative humidity of 50 to 100% without applying a voltage. Relative humidity is 50
Even if left in an atmosphere of less than%, no remarkable moisture resistance is exhibited. When a voltage is applied and left in an atmosphere of relative humidity of 50 to 100%, a defective product will be like a product with a good leakage current value. Even if a leak current test is performed, it is difficult to distinguish between a good product and a defective product. It is inconvenient because it may cause deterioration during the final moisture resistance test. On the other hand, the time for leaving the solid electrolytic capacitor in high humidity varies depending on the type, size, etc. of the anode substrate to be used, so it is determined by preliminary experiments, but it is generally within a few days.
【００１３】次に高湿度中に電圧無印加で放置された固
体電解コンデンサは、引き続き８０℃以上１８０℃未満
の雰囲気中で電圧印加する。８０℃未満では耐湿性の良
好な固体電解コンデンサは得られず、１８０℃以上では
かえって固体電解コンデンサの性能、とりわけｔａｎδ
値を不良にするので不都合である。また、電圧印加する
ことによって漏れ電流値の良悪の判別をし良品のみを製
品とすることにより、最終の耐湿性テストの結果が良好
となる。電圧を印加しなければ最終の漏れ電流値の良悪
の判別時に良品の数量が減少するために、コスト的に不
利である。Next, the voltage of the solid electrolytic capacitor left in high humidity without voltage application is continuously applied with voltage in an atmosphere of 80 ° C. or higher and less than 180 ° C. If it is lower than 80 ° C, a solid electrolytic capacitor having good moisture resistance cannot be obtained, and if it is 180 ° C or higher, the performance of the solid electrolytic capacitor, especially tanδ
It is inconvenient because it makes the value bad. Also, by applying voltage, it is possible to determine whether the leakage current value is good or bad, and only good products are made into products, so that the final moisture resistance test result becomes good. If no voltage is applied, the number of non-defective products decreases at the time of determining whether the final leakage current value is good or bad, which is disadvantageous in terms of cost.
【００１４】湿度については特に限定されないが、通常
４０％以下であり、印加電圧は作製するコンデンサの耐
電圧以下である。電圧印加しておく時間も特に限定はな
いが通常数時間以内でよい。The humidity is not particularly limited, but is usually 40% or less, and the applied voltage is less than the withstand voltage of the capacitor to be manufactured. The time for applying the voltage is not particularly limited, but is usually within several hours.
【００１５】[0015]
【作用】固体電解コンデンサを作製するにあたり、相対
湿度５０〜１００％の高湿度の雰囲気中に電圧を印加し
ないで放置し、さらに８０℃以上１８０℃未満の雰囲気
中で電圧を印加することによって、固体電解コンデンサ
に湿度による劣化に対する抵抗力を持たせうるものと考
えられる。In producing a solid electrolytic capacitor, by leaving it in a high humidity atmosphere having a relative humidity of 50 to 100% without applying a voltage, and further applying a voltage in an atmosphere of 80 ° C. or higher and less than 180 ° C., It is considered that the solid electrolytic capacitor can have resistance to deterioration due to humidity.
【００１６】[0016]
【実施例】以下、実施例および比較例を示して本発明を
さらに詳しく説明する。 実施例１〜１２、比較例１〜１２ りん酸とりん酸アンモニウム水溶液中で化成処理して表
面に誘電体酸化皮膜層を形成した４５μＦ／cm2 のアル
ミニウムエッチング箔（以下、化成箔と称する。）の小
片５×３mmを、酢酸鉛三水和物２．４モル／リットルの
水溶液と過硫酸アンモニウム４．０モル／リットル水溶
液の混合液に、小片の３×３mm部分が浸漬するように漬
け６０℃で２０分放置し、二酸化鉛と硫酸鉛からなる半
導体層を形成した。EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples. Examples 1 to 12 and Comparative Examples 1 to 12 45 μF / cm 2 aluminum etching foil (hereinafter referred to as chemical conversion foil) having a dielectric oxide film layer formed on the surface by chemical conversion treatment in phosphoric acid and ammonium phosphate aqueous solution. 5) 3 mm of the small piece of) is soaked in a mixed solution of an aqueous solution of lead acetate trihydrate 2.4 mol / liter and ammonium persulfate 4.0 mol / liter so that the 3 × 3 mm part of the small piece is immersed. It was left at 20 ° C. for 20 minutes to form a semiconductor layer made of lead dioxide and lead sulfate.
【００１７】このような操作を３回行った後、半導体層
上にカーボンペーストおよび銀ペーストを順に積層して
導電体層を形成した。次いで別に用意したリードフレー
ムの互いに対向した１対の凸部に各々、導電体層形成部
と、半導体層が形成されていない部分を各々載置し、前
者は導電ペーストで後者は熔接で接続した後、エポキシ
樹脂をトランスファー成形してチップ状固体電解コンデ
ンサを作製した。そしてこの外装樹脂の厚みを測定した
ところ約１．２〜１．７mmであった。次に表１に示した
湿度中に２４時間放置した後、表１に並記した温度の恒
温槽に入れ１０Ｖを印加して３時間放置した。このよう
な工程を経た後、漏れ電流の測定を行いその値が０．０
５μＡ以下のものを良品として固体電解コンデンサとし
た。After performing such an operation three times, a carbon paste and a silver paste were sequentially laminated on the semiconductor layer to form a conductor layer. Then, a conductor layer forming portion and a portion where the semiconductor layer is not formed are respectively placed on a pair of mutually opposing convex portions of a separately prepared lead frame, and the former is connected by a conductive paste and the latter is connected by welding. Then, an epoxy resin was transfer-molded to produce a chip solid electrolytic capacitor. When the thickness of this exterior resin was measured, it was about 1.2 to 1.7 mm. Next, after leaving it in the humidity shown in Table 1 for 24 hours, it was placed in a constant temperature bath having the temperatures shown in Table 1 and 10 V was applied and left for 3 hours. After such a process, the leakage current is measured and the value is 0.0
A solid electrolytic capacitor having 5 μA or less was regarded as a good product.
【００１８】実施例１３〜２４、比較例１３〜２４ 実施例１〜１２で半導体層を酢酸鉛三水和物２．０モル
／リットル水溶液に化成箔を浸漬して、別に用意した白
金陰極との間で電気化学的に形成した二酸化鉛にした以
外は実施例１〜１２と同様にして固体電解コンデンサを
それぞれ作製した。又、各々の作製条件を表２に示し
た。Examples 13 to 24, Comparative Examples 13 to 24 The semiconductor layer in Examples 1 to 12 was dipped in a chemical conversion foil in a 2.0 mol / liter aqueous solution of lead acetate trihydrate to prepare a platinum cathode separately prepared. Solid electrolytic capacitors were produced in the same manner as in Examples 1 to 12 except that lead dioxide formed electrochemically between the two was used. Table 2 shows the respective manufacturing conditions.
【００１９】[0019]
【表１】 [Table 1]
【表２】 以上作製した固体電解コンデンサの性能および８５℃、
８５％ＲＨ中の５００時間の耐湿テスト後のｔａｎδ値
および漏れ電流値が１０μＡ以上を不良とした個数をま
とめて表３に示した。なお、表３の各々の値は、各実施
例および比較例で製作した各々５０個の平均値である。[Table 2] Performance of the solid electrolytic capacitor produced above and 85 ° C,
Table 3 collectively shows the number of defective tan δ values and leakage current values of 10 μA or more after the moisture resistance test in 85% RH for 500 hours. Each value in Table 3 is an average value of 50 pieces manufactured in each of the examples and comparative examples.
【００２０】[0020]
【表３】 [Table 3]
【表４】 [Table 4]
【００２１】[0021]
【発明の効果】本発明の固体電解コンデンサの製法によ
れば、樹脂封口した後、相対湿度５０乃至１００％の高
湿度の雰囲気中に電圧を印加しないで放置し、次に８０
℃以上１８０℃未満の温度の雰囲気中で電圧を印加して
いるので、作製した固体電解コンデンサは耐湿性テスト
時の耐湿性が極めて良好である。According to the method for producing a solid electrolytic capacitor of the present invention, after sealing with a resin, the solid electrolytic capacitor is left in an atmosphere of high humidity with relative humidity of 50 to 100% without applying a voltage, and then 80
Since the voltage is applied in the atmosphere having a temperature of not lower than 180 ° C. and not higher than 180 ° C., the manufactured solid electrolytic capacitor has extremely good humidity resistance in the humidity resistance test.
Claims (1)
酸化皮膜層を形成し、その上に順次、半導体層および導
電体層を形成した後、樹脂封口してコンデンサ素子と
し、このコンデンサ素子を相対湿度５０乃至１００％の
雰囲気中に電圧無印加で放置した後、８０℃以上１８０
℃未満の雰囲気中で電圧印加することを特徴とする固体
電解コンデンサの製造方法。1. A dielectric oxide film layer is formed on a surface of an anode substrate having a valve action, a semiconductor layer and a conductor layer are sequentially formed on the dielectric oxide film layer, and a resin element is sealed to form a capacitor element. After leaving the sample in an atmosphere with relative humidity of 50 to 100% without applying a voltage,
A method for manufacturing a solid electrolytic capacitor, which comprises applying a voltage in an atmosphere of less than ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20182091A JPH0547608A (en) | 1991-08-12 | 1991-08-12 | Production of solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20182091A JPH0547608A (en) | 1991-08-12 | 1991-08-12 | Production of solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0547608A true JPH0547608A (en) | 1993-02-26 |
Family
ID=16447446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20182091A Pending JPH0547608A (en) | 1991-08-12 | 1991-08-12 | Production of solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0547608A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6152333A (en) * | 1984-08-21 | 1986-03-15 | Toshiba Corp | Bonding wire |
-
1991
- 1991-08-12 JP JP20182091A patent/JPH0547608A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6152333A (en) * | 1984-08-21 | 1986-03-15 | Toshiba Corp | Bonding wire |
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