JPH05503501A - 光学的品質の単結晶を成長させるための熱水的方法 - Google Patents
光学的品質の単結晶を成長させるための熱水的方法Info
- Publication number
- JPH05503501A JPH05503501A JP91504331A JP50433191A JPH05503501A JP H05503501 A JPH05503501 A JP H05503501A JP 91504331 A JP91504331 A JP 91504331A JP 50433191 A JP50433191 A JP 50433191A JP H05503501 A JPH05503501 A JP H05503501A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- hydrothermal
- raw material
- process according
- hydrothermal method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 90
- 238000001027 hydrothermal synthesis Methods 0.000 title claims description 39
- 230000003287 optical effect Effects 0.000 title description 10
- 239000002994 raw material Substances 0.000 claims description 37
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 29
- 239000011707 mineral Substances 0.000 claims description 29
- 239000000243 solution Substances 0.000 claims description 19
- 239000007864 aqueous solution Substances 0.000 claims description 18
- 239000001963 growth medium Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 238000004090 dissolution Methods 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 230000001089 mineralizing effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 12
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 9
- 229910001369 Brass Inorganic materials 0.000 description 8
- 239000010951 brass Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 6
- 229910003202 NH4 Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004933 hydrothermal crystal growth Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 235000010333 potassium nitrate Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007836 KH2PO4 Substances 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 235000018936 Vitellaria paradoxa Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (20)
- 1.Mの濃度が少なくとも約8モル濃度である造鉱素水溶液を使用し、結晶化中 に約500℃以下の成長領域温度もしくは14,000psi以下の圧力、また はその双方を使用することを特徴とする、式中のMがK、Rb、TlおよびNH 4、ならびにその混合物よりなるグループから選択されたものであり、XがPお よびAs、ならびにその混合物よりなるグループから選択されたものであるMT iOXO4の結晶を成長領域の高温において成長させる、造鉱素溶液を含有する 成長媒体を使用する熱水的方法。
- 2.原料を原料領域において溶解させ、原料領域の温度が成長領域の温度より高 く、かつ約500℃またはそれ以下であることを特徴とする請求の範囲1記載の 熱水的方法。
- 3.結晶成長が9,000psiまたはそれ以下の圧力で起きることを特徴とす る請求の範囲1記載の熱水的方法。
- 4.上記の圧力が2,000ないし8.000psiの範囲であることを特徴と する請求の範囲1記載の熱水的方法。
- 5.上記のMの濃度が約10ないし15モル濃度であることを特徴とする請求の 範囲1記載の熱水的方法。
- 6.上記の造鉱業溶液が、約2.2:1ないし約1.2:1のM対Xのモル比で MとXとを含有することを特徴とする請求の範囲1記載の熱水的方法。
- 7.MがKであることを特徴とする請求の範囲1記載の熱水的方法。
- 8.XがPであることを特徴とする請求の範囲7記載の熱水的方法。
- 9.XがPであることを特徴とする請求の範囲1記載の熱水的方法。
- 10.XがAsであることを特徴とする請求の範囲1記載の熱水的方法。
- 11.造鉱素の水溶液中の上記のMの濃度が14,000psi以下の圧力で結 晶成長を起こさせるのに有効な少なくとも約8モル濃度の値であることを特徴と する、(1)容器中に(a)成長領域中のMTiOXO4の結晶の造核成長手段 、(b)原料領域中の土記のMTiOX04の結晶を成長させるための原料と、 選択した濃度のMを含有する造鉱素の水溶液とを有する成長媒体、ならびに(c )上記の成長領域と上記の原料領域との間に温度勾配を作る手段を準備し;(2 )上記の原料領域中で少なくとも上記の原料の一部の溶解に効果を現すのに十分 な原料温度を使用し;(3)上記の成長領域中で上記の原料温度よりは低い、高 い成長温度と圧力とを使用して上記の結晶の成長を開始させる各段階を包含する 上記の請求項1記載の熱水的方法。
- 12.原料温度が約450℃またはそれ以下であることを特徴とする請求の範囲 11記載の熱水的方法。
- 13.結晶成長が9.000psiまたはそれ以下の圧力で起きることを特徴と する請求の範囲11記載の熱水的方法。
- 14.上記の圧力が2,000ないし8,000psiの範囲であることを特徴 とする請求の範囲11記載の熱水的方法。
- 15.上記のMの濃度が約10ないし15モル濃度であることを特徴とする請求 の範囲11記載の熱水的方法。
- 16.上記の造鉱素溶液が、約2.2:1ないし約1.2:1のM対Xのモル比 でMおよびXを含有することを特徴とする請求の範囲11記載の熱水的方法。
- 17.MがKであることを特徴とする請求の範囲11記載の熱水的方法。
- 18.XがPであることを特徴とする請求の範囲17記載の熱水的方法。
- 19.XがPであることを特徴とする請求の範囲11記載の熱水的方法。
- 20.XがAsであることを特徴とする請求の範囲11記載の熱水的方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/461,562 US5066356A (en) | 1990-01-05 | 1990-01-05 | Hydrothermal process for growing optical-quality single crystals |
| US461,562 | 1990-01-05 | ||
| PCT/US1990/007357 WO1991009993A1 (en) | 1990-01-05 | 1990-12-20 | Hydrothermal process for growing optical-quality single crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05503501A true JPH05503501A (ja) | 1993-06-10 |
| JP3289895B2 JP3289895B2 (ja) | 2002-06-10 |
Family
ID=23833073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50433191A Expired - Lifetime JP3289895B2 (ja) | 1990-01-05 | 1990-12-20 | 光学的品質の単結晶を成長させるための水熱方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5066356A (ja) |
| EP (1) | EP0509060B1 (ja) |
| JP (1) | JP3289895B2 (ja) |
| AU (1) | AU7306891A (ja) |
| DE (1) | DE69022743T2 (ja) |
| WO (1) | WO1991009993A1 (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5281405A (en) * | 1992-02-19 | 1994-01-25 | E. I. Du Pont De Nemours And Company | Optically useful compositions and a sol-gel process for their production |
| US5264073A (en) * | 1992-02-28 | 1993-11-23 | E. I. Du Pont De Nemours And Company | Hydrothermal process for growing optical-quality single crystals and aqueous mineralizer therefor |
| US5326423A (en) * | 1992-03-25 | 1994-07-05 | E. I. Du Pont De Nemours And Company | Doped crystalline titanyl arsenates and preparation thereof |
| JP3289905B2 (ja) * | 1992-03-31 | 2002-06-10 | イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー | 光学品質結晶の損傷感受性を減少させる方法 |
| JPH0664995A (ja) * | 1992-05-15 | 1994-03-08 | Sony Corp | KTiOPO4 単結晶及びその製造方法 |
| US5350961A (en) * | 1992-07-31 | 1994-09-27 | E. I. Du Pont De Nemours And Company | Acoustic wave devices for controlling high frequency signals |
| WO1995010817A1 (en) * | 1993-10-08 | 1995-04-20 | E.I. Du Pont De Nemours And Company | Acoustic frequency mixing devices using potassium titanyl phosphate and its analogs |
| US5418866A (en) * | 1993-10-08 | 1995-05-23 | E. I. Du Pont De Nemours And Company | Surface acoustic wave devices for controlling high frequency signals using modified crystalline materials |
| US5448125A (en) * | 1994-06-27 | 1995-09-05 | E. I. Du Pont De Nemours And Company | Surface skimming bulk wave generation in KTiOPO4 and its analogs |
| US7317859B2 (en) * | 2004-08-25 | 2008-01-08 | Advanced Photonics Crystals | Periodically poled optical crystals and process for the production thereof |
| CN1308502C (zh) * | 2005-01-11 | 2007-04-04 | 桂林矿产地质研究院 | 非线性光学晶体Nb:KTP的合成方法 |
| US9506166B1 (en) | 2010-07-08 | 2016-11-29 | Clemson University Research Foundation | Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers |
| US9493887B1 (en) | 2010-07-08 | 2016-11-15 | Clemson University Research Foundation | Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same |
| US9014228B1 (en) | 2010-07-08 | 2015-04-21 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals for solid state laser applications |
| US9711928B2 (en) | 2012-06-22 | 2017-07-18 | Clemson University Research Foundation | Single crystals with internal doping with laser ions prepared by a hydrothermal method |
| US9469915B2 (en) | 2012-06-22 | 2016-10-18 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression |
| CN103305899A (zh) * | 2013-06-19 | 2013-09-18 | 中国有色桂林矿产地质研究院有限公司 | 一种水热法生长大尺寸砷酸钛氧钾体单晶的方法 |
| US10156025B2 (en) | 2015-05-04 | 2018-12-18 | University Of South Carolina | Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949323A (en) * | 1974-03-14 | 1976-04-06 | E. I. Du Pont De Nemours & Company | Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices |
| JPS565400A (en) * | 1979-06-18 | 1981-01-20 | Du Pont | Crystal growth of ktiopo4 and its analogue compound |
| US4305778A (en) * | 1979-06-18 | 1981-12-15 | E. I. Du Pont De Nemours And Company | Hydrothermal process for growing a single crystal with an aqueous mineralizer |
| FR2585345B1 (fr) * | 1985-07-26 | 1989-08-18 | Centre Nat Rech Scient | Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle |
| FR2609976B2 (fr) * | 1985-07-26 | 1989-11-03 | Centre Nat Rech Scient | Syntheses en flux de cristaux et epitaxies de solutions solides isotypes de ktiopo4 |
| US4654111A (en) * | 1985-12-02 | 1987-03-31 | At&T Laboratories | Hydrothermal growth of potassium titanyl phosphate |
| US4761202A (en) * | 1986-05-30 | 1988-08-02 | U.S. Philips Corporation | Process for crystal growth of KTiOPO4 from solution |
| US4740265A (en) * | 1987-01-08 | 1988-04-26 | E. I. Du Pont De Nemours And Company | Process for producing an optical waveguide and the product therefrom |
| US4766954A (en) * | 1987-01-08 | 1988-08-30 | E. I. Du Pont De Nemours And Company | Process for producing an optical waveguide |
-
1990
- 1990-01-05 US US07/461,562 patent/US5066356A/en not_active Expired - Lifetime
- 1990-12-20 WO PCT/US1990/007357 patent/WO1991009993A1/en not_active Ceased
- 1990-12-20 EP EP91904693A patent/EP0509060B1/en not_active Expired - Lifetime
- 1990-12-20 DE DE69022743T patent/DE69022743T2/de not_active Expired - Lifetime
- 1990-12-20 AU AU73068/91A patent/AU7306891A/en not_active Abandoned
- 1990-12-20 JP JP50433191A patent/JP3289895B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69022743T2 (de) | 1997-04-24 |
| EP0509060A1 (en) | 1992-10-21 |
| WO1991009993A1 (en) | 1991-07-11 |
| EP0509060B1 (en) | 1995-09-27 |
| JP3289895B2 (ja) | 2002-06-10 |
| AU7306891A (en) | 1991-07-24 |
| US5066356A (en) | 1991-11-19 |
| DE69022743D1 (de) | 1995-11-02 |
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