JPH0563222A - Manufacturing equipment of photovoltaic apparatus - Google Patents
Manufacturing equipment of photovoltaic apparatusInfo
- Publication number
- JPH0563222A JPH0563222A JP3253174A JP25317491A JPH0563222A JP H0563222 A JPH0563222 A JP H0563222A JP 3253174 A JP3253174 A JP 3253174A JP 25317491 A JP25317491 A JP 25317491A JP H0563222 A JPH0563222 A JP H0563222A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- processing
- laser
- time
- removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 10
- 238000005259 measurement Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、光起電力装置の製造
工程において、エネルギビーム特にレーザビームの照射
により被加工領域を除去する工程を実施する光起電力装
置の製造装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for manufacturing a photovoltaic device, which performs a process of removing a region to be processed by irradiating an energy beam, particularly a laser beam, in a process for manufacturing a photovoltaic device.
【０００２】[0002]
【従来の技術】光起電力装置において、特開昭５７−１
２５８６号公報に開示される先行技術は、レーザビーム
照射により被加工領域を除去するものであって、微細加
工性に優れた製造手法であり、この技法を用いた製造装
置としては、例えば図６に示すような構成のものがあ
る。2. Description of the Related Art In a photovoltaic device, Japanese Patent Laid-Open No. 57-1
The prior art disclosed in Japanese Patent No. 2586 discloses a method of removing an area to be processed by laser beam irradiation, which is a manufacturing method excellent in fine workability. A manufacturing apparatus using this technique is, for example, FIG. There is a configuration as shown in.
【０００３】この製造装置において、レーザ発振器ａか
ら出射されるレーザビームｂは、光学系ｃを介して被加
工物である光起電力装置Ｗに照射されて、この光起電力
装置Ｗの半導体膜等が選択的に除去されるが、この半導
体膜等を除去するに際しては、除去されるべき半導体膜
等を完全に除去すべく、そのエネルギ密度等の加工条件
が厳格に設定されていた。In this manufacturing apparatus, a laser beam b emitted from a laser oscillator a is applied to a photovoltaic device W, which is a workpiece, via an optical system c, and a semiconductor film of the photovoltaic device W. Etc. are selectively removed. However, when the semiconductor film or the like is removed, the processing conditions such as the energy density are strictly set so as to completely remove the semiconductor film or the like to be removed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、この加
工条件は、調整手段がなく調整不可能であることから、
以下に述べるような問題があった。However, since the processing conditions cannot be adjusted without adjusting means,
There was a problem as described below.
【０００５】すなわち、除去されるべき半導体膜等を完
全に除去し、かつこの半導体膜等の下層に損傷を与える
ことのない最適なレーザビームのエネルギ密度等の加工
条件は、光起電力装置Ｗにおける被加工領域の膜構成に
より決定されるところ、この膜構成における材質や膜厚
等は、実際上バラツキがあって完全には均一でない。That is, the optimum processing conditions such as the energy density of the laser beam that completely removes the semiconductor film or the like to be removed and does not damage the lower layer of the semiconductor film or the like are determined by the photovoltaic device W. As determined by the film configuration of the processed region in, the material, film thickness, and the like in this film configuration actually vary and are not completely uniform.
【０００６】したがって、このように膜構成が不均一な
光起電力装置Ｗの各被加工領域に対して、一定の加工条
件下にレーザ加工が行われると、上記膜厚等のバラツキ
によって、被加工領域に加工不良を生じていた。Therefore, when laser processing is performed on each processing region of the photovoltaic device W having such a non-uniform film structure under a constant processing condition, the above-mentioned variation in film thickness or the like causes the processing to be performed. Machining failure occurred in the machining area.
【０００７】例えば、必要とされるレベルよりも高いエ
ネルギ密度のレーザビームを照射した場合は、所望する
被加工領域を超えた下層の領域が除去されるなど悪影響
が生じる。一方、必要とされるレベルよりも低いエネル
ギ密度のレーザビームを照射した場合は、所望する被加
工領域内で除去されない部位が生じてしまう。そして、
これら加工不良はいずれも、光起電力装置の性能を低下
させる原因となっていた。For example, when a laser beam having an energy density higher than a required level is irradiated, adverse effects such as removal of a lower layer region beyond a desired region to be processed occur. On the other hand, when a laser beam having an energy density lower than the required level is irradiated, a portion that is not removed occurs in a desired processed region. And
All of these processing defects have been a cause of deteriorating the performance of the photovoltaic device.
【０００８】以上のような問題は、レーザビーム以外の
他のエネルギビームを使用したものにおいて共通して生
じていた。The above-mentioned problems commonly occur in the case of using an energy beam other than the laser beam.
【０００９】この発明は、かかる従来の問題点に鑑みて
なされたものであって、被加工物の膜構成のバラツキの
如何にかかわらず、常に最適な加工条件下でエネルギビ
ーム加工を行うことのできる光起電力装置の製造装置の
提供を目的とする。The present invention has been made in view of the above-mentioned conventional problems, and it is possible to always perform energy beam processing under optimal processing conditions regardless of variations in the film structure of a workpiece. An object of the present invention is to provide a manufacturing apparatus for a photovoltaic device that can be manufactured.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、この発明の製造装置は、レーザビームを被加工物の
被加工領域に照射して、この被加工領域を除去する工程
を行うものであって、前記レーザビームの照射開始時か
ら前記被加工領域の除去完了までの時間を測定する時間
測定手段と、この時間測定手段により測定された時間に
基づき、前記レーザビームの照射条件を最適化する条件
制御手段とを備えてなることを特徴とする。In order to achieve the above object, the manufacturing apparatus of the present invention performs a step of irradiating a processing region of a workpiece with a laser beam and removing the processing region. Therefore, the irradiation condition of the laser beam is optimized based on the time measuring means for measuring the time from the start of the irradiation of the laser beam to the completion of the removal of the processed region, and the time measured by the time measuring means. And a condition control means for controlling the condition.
【００１１】[0011]
【作用】この発明の製造装置によれば、時間測定手段
が、常時被加工物に対するレーザビームの照射開始時か
ら被加工領域の除去完了までに要する時間を測定し、条
件制御手段が、時間測定手段の測定結果を、予め設定し
た被加工領域の除去に要する最適値と比較しつつ、この
最適値に一致するようレーザビームの照射条件を逐次変
化させていき、これにより、最適な照射条件下での被加
工領域の除去を光起電力装置全面にわたって実現する。According to the manufacturing apparatus of the present invention, the time measuring means constantly measures the time required from the start of laser beam irradiation to the workpiece to the completion of removal of the processing area, and the condition control means measures the time. While comparing the measurement result of the means with the optimum value required for the removal of the preset processing area, the irradiation conditions of the laser beam are sequentially changed so as to match the optimum value. The removal of the processed region is realized over the entire surface of the photovoltaic device.
【００１２】つまり、被加工領域はレーザビーム照射に
より昇温して、除去される。この場合、高エネルギ密度
のレーザビーム照射時は、被加工領域の温度上昇が早
く、短時間で除去される。これに対し、低エネルギ密度
のレーザビーム照射時は、被加工領域の温度上昇が遅
く、レーザビーム照射開始時から除去までの時間は長く
なる。That is, the region to be processed is heated by the laser beam irradiation and removed. In this case, when the laser beam with a high energy density is irradiated, the temperature of the region to be processed rises quickly and is removed in a short time. On the other hand, when the laser beam having a low energy density is irradiated, the temperature rise in the processed region is slow, and the time from the start of the laser beam irradiation to the removal is long.
【００１３】したがって、この発明では、レーザビーム
照射開始時から被加工領域除去までの時間を測定し、入
射パワー密度の過不足を判定、調整することで、被加工
領域の除去に適したパワー密度を与えることができる。Therefore, according to the present invention, the time from the start of laser beam irradiation to the removal of the processed area is measured, and the excess or deficiency of the incident power density is determined and adjusted, whereby the power density suitable for removal of the processed area is determined. Can be given.
【００１４】[0014]
【実施例】以下、この発明の実施例を図面を参照して説
明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１５】実施例１ この発明に係る光起電力装置の製造装置の構成を図１お
よび図２に示し、この製造装置は、エネルギビームとし
てレーザビームＬを用いたものであって、基本構成とし
てのレーザ発振器１および光学系２と、これら基本構成
１，２を自動制御する時間測定手段３および条件制御手
段４からなる制御装置とを備えてなる。Embodiment 1 The construction of a photovoltaic device manufacturing apparatus according to the present invention is shown in FIGS. 1 and 2, and this manufacturing apparatus uses a laser beam L as an energy beam and has a basic structure. The laser oscillator 1 and the optical system 2 and the control device including the time measuring means 3 and the condition controlling means 4 for automatically controlling the basic configurations 1 and 2 are provided.
【００１６】加工用レーザ発振器１として、図示例にお
いてはＱスイッチ付ＹＡＧレーザが使用されており、こ
の加工用レーザ１のレーザビームＬの発射タイミング
は、トリガ発生器１０からのトリガパルスにより制御さ
れる。A YAG laser with a Q switch is used as the processing laser oscillator 1 in the illustrated example, and the emission timing of the laser beam L of the processing laser 1 is controlled by a trigger pulse from a trigger generator 10. It
【００１７】光学系２は、加工用レーザ１からのレーザ
ビームＬを反射するハーフミラー１１ａと、レーザビー
ムＬを集光する集光レンズ１１ｂとを備え、上記加工用
レーザ１から発射されるレーザビームＬは、これらハー
フミラー１１ａおよび集光レンズ１１ｂを介して、被加
工物Ｗに照射される。The optical system 2 includes a half mirror 11a for reflecting the laser beam L from the processing laser 1 and a condenser lens 11b for condensing the laser beam L, and the laser emitted from the processing laser 1 is used. The beam L is applied to the workpiece W via the half mirror 11a and the condenser lens 11b.
【００１８】時間測定手段３は、レーザビームＬの照射
開始時から被加工物Ｗにおける被加工領域の除去完了ま
での時間を測定するためのもので、図示例においては、
時間測定用ビームとしてＨｅ−Ｎｅレーザ５が用いられ
ている。The time measuring means 3 is for measuring the time from the start of the irradiation of the laser beam L to the completion of removal of the region to be processed in the work W, and in the illustrated example,
A He-Ne laser 5 is used as the time measuring beam.
【００１９】このＨｅ−Ｎｅレーザ５から発射される測
定用レーザビームＭは、集光レンズ１２を介して被加工
物Ｗの被加工領域に照射されるとともに、この被加工領
域を通過するレーザビームＭが、集光レンズ１３を介し
て検出器であるフィルタ付ピンフォトダイオード６に照
射される。ピン・フォト・ダイオード６は、この照射量
に応じた信号を増幅器７を介してディジタル・ストレー
ジ・オシロスコープ８へ送り、これにより、現在の加工
用レーザ照射開始時より被加工領域の除去までの時間が
測定される。The measuring laser beam M emitted from the He-Ne laser 5 is applied to the work area of the work W through the condenser lens 12 and passes through the work area. M is irradiated onto the pin photodiode 6 with a filter, which is a detector, through the condenser lens 13. The pin photo diode 6 sends a signal corresponding to this irradiation amount to the digital storage oscilloscope 8 via the amplifier 7, whereby the time from the start of the current laser irradiation for processing to the removal of the processing area is performed. Is measured.
【００２０】また、これと並行して、上記加工用レーザ
１からのレーザビームＬの照射量がピンフォトダイオー
ド９により検出されて、この検出信号も上記オシロスコ
ープ８へ送られる。このオシロスコープ８の表示内容に
ついては後述する。At the same time, the irradiation amount of the laser beam L from the processing laser 1 is detected by the pin photodiode 9, and this detection signal is also sent to the oscilloscope 8. The display contents of the oscilloscope 8 will be described later.
【００２１】条件制御手段４は、レーザビームＬの照射
条件を上記被加工領域の加工に最適な状態に自動調整す
るためのもので、上記時間測定手段３からの測定結果デ
ータに基づき、最適な照射条件に対する現在の加工条件
を比較判断しつつ、この条件が最適値となるように、上
記加工用レーザ１および光学系２を制御する。The condition control means 4 is for automatically adjusting the irradiation condition of the laser beam L to the optimum state for processing the above-mentioned region to be processed, and based on the measurement result data from the time measuring means 3, the optimum condition is obtained. The processing laser 1 and the optical system 2 are controlled so that the present processing conditions are compared with the irradiation conditions and the optimum values are obtained.
【００２２】条件制御手段４により制御されるものとし
ては、図示例においては、加工用レーザ１の加工速度や
光学系２の焦点ずらし量等であるが、このほか加工用レ
ーザ１や光学系２以外に働きかけることにより加工条件
の最適化を図ってもよい。The conditions controlled by the condition control means 4 are the processing speed of the processing laser 1 and the defocus amount of the optical system 2 in the illustrated example. The processing conditions may be optimized by acting on other factors.
【００２３】同時間測定手段により検出される信号例を
示す。図３は、上記オシロスコープ８の表示内容を示
し、透明電極上に半導体膜を形成した被加工物Ｗに照射
される加工用レーザビームＬの強度と、このときの被加
工物Ｗの被加工領域を通過する測定用レーザビームＭの
強度が表示される。An example of a signal detected by the same time measuring means will be shown. FIG. 3 shows the display contents of the oscilloscope 8, the intensity of the processing laser beam L irradiated on the workpiece W having the semiconductor film formed on the transparent electrode, and the processed region of the workpiece W at this time. The intensity of the measuring laser beam M passing through is displayed.
【００２４】図３において、Ｉo はそれぞれ被加工物Ｗ
に照射した加工用レーザビームＬのパワー密度であり、
半導体膜の選択加工に対し、上から、最適より強、最
適、および最適より弱のパワー密度が表示されている。In FIG. 3, I o is the workpiece W, respectively.
Is the power density of the processing laser beam L irradiated on the
The power densities stronger than optimum, optimum, and weaker than optimum are displayed from the top for the selective processing of the semiconductor film.
【００２５】なお、この図において、Ｈｅ−Ｎｅレーザ
５の強度が、被加工物Ｗの半導体膜加工により一度低下
した後、再び上昇しているが、これは、半導体膜溶融に
伴う、Ｈｅ−Ｎｅレーザ５の過透の減少と、それに引き
続いて起こる半導体膜除去に伴う、Ｈｅ−Ｎｅレーザ５
の透過の増大を示している。よって、このＨｅ−Ｎｅレ
ーザ５の透過光の強度をみることにより、被加工領域の
除去される時間を測定することができる。In this figure, the intensity of the He-Ne laser 5 is once reduced by the semiconductor film processing of the workpiece W and then increased again. This is due to the melting of the semiconductor film, He-Ne. The He—Ne laser 5 is accompanied by the reduction of the translucency of the Ne laser 5 and the subsequent removal of the semiconductor film.
Shows an increase in the transmission of Therefore, by looking at the intensity of the transmitted light of the He-Ne laser 5, the removal time of the processed region can be measured.
【００２６】また、Ｈｅ−Ｎｅレーザ５の透過光の強度
の変化は、加工用レーザ１のパワー密度が強いほど急激
に起こっており、このことは、加工用レーザ１のパワー
密度が強いほど短時間で被加工領域の除去が起こってい
ることを示している。Further, the change in the intensity of the transmitted light of the He-Ne laser 5 occurs more abruptly as the power density of the processing laser 1 is higher, and this is shorter as the power density of the processing laser 1 is stronger. It shows that the removal of the processed region is occurring in time.
【００２７】よって、上記条件制御手段４により、被加
工領域の除去が起こる時間を最適なパワー密度における
時間と一致させるべく上記加工条件を調整することで、
最適な加工条件における加工を、被加工物Ｗの膜構成の
バラツキによらず実現することができることになる。Therefore, the condition control means 4 adjusts the processing conditions so that the time for removing the processed region coincides with the time at the optimum power density.
The processing under the optimum processing conditions can be realized regardless of variations in the film configuration of the workpiece W.
【００２８】而して、加工用レーザ（レーザ発振器）１
からのレーザビームＬを光学系２を介して被加工物Ｗの
被加工領域に照射し、この被加工領域を除去する工程に
おいて、時間測定手段３が、常時、被加工物Ｗに対する
レーザビームＬの照射開始時から被加工領域の除去完了
までに要する時間を測定し、条件制御手段４が、時間測
定手段３の測定結果を、予め設定した被加工領域の除去
に要する最適値と比較して現在の加工条件を判断し、こ
れが上記最適値に一致するよう加工用レーザ１や光学系
２等を制御して、レーザビームＬの照射条件を逐次変化
させていく。これにより、最適な照射条件下での被加工
領域の除去が被加工物Ｗ全面にわたって行われることと
なる。Thus, the processing laser (laser oscillator) 1
In the process of irradiating the processed region of the workpiece W with the laser beam L from the optical system 2 through the optical system 2 and removing the processed region, the time measuring means 3 always applies the laser beam L to the workpiece W. The time required from the start of irradiation to the completion of removal of the processing area is measured, and the condition control means 4 compares the measurement result of the time measuring means 3 with a preset optimum value required for removing the processing area. The current processing conditions are determined, and the processing laser 1 and the optical system 2 are controlled so that they match the optimum values, and the irradiation conditions of the laser beam L are sequentially changed. As a result, the removal of the processing area under the optimum irradiation condition is performed over the entire surface of the processing object W.
【００２９】実施例２ 本例は図４に示し、時間測定手段３が、被加工物Ｗの被
加工領域を透過する加工用レーザビームＬの強度を測定
するように構成されたものである。Example 2 This example is shown in FIG. 4, and the time measuring means 3 is configured to measure the intensity of the processing laser beam L that passes through the region to be processed of the workpiece W.
【００３０】すなわち、被加工物Ｗの背面側において、
上記レーザビームＬの照射方向に対向してピンフォトダ
イオード６が配置されており、これがレーザビームＬの
被加工領域の透過量に応じた信号を図２のオシロスコー
プ８へ送り、これにより、現在の加工用レーザ照射開始
時から被加工領域の除去までの時間が測定されることと
なる。その他の構成および作用は実施例１と同様であ
る。That is, on the back side of the workpiece W,
The pin photodiode 6 is arranged so as to face the irradiation direction of the laser beam L, and this sends a signal according to the amount of transmission of the laser beam L in the processed region to the oscilloscope 8 in FIG. The time from the start of the laser irradiation for processing to the removal of the processing area is measured. Other configurations and operations are similar to those of the first embodiment.
【００３１】実施例３ 本例は図５に示し、時間測定手段３が、被加工物Ｗの被
加工領域を反射する測定用レーザビームＭの強度を測定
するように構成されたものである。Embodiment 3 This embodiment is shown in FIG. 5, and the time measuring means 3 is constructed so as to measure the intensity of the measuring laser beam M which reflects the work area of the work W.
【００３２】すなわち、上記被加工領域に測定用レーザ
ビームＭを斜め上方から照射する一方、被加工物Ｗに対
する測定用レーザビームＭの反射方向に対向してピンフ
ォトダイオード６が配置されている。そして、加工用レ
ーザビームＬによる被加工領域除去に伴う上記測定用レ
ーザビームＭの反射量に応じた信号が、ピンフォトダイ
オード６から図２のオシロスコープ８へ送られて、現在
の加工用レーザ照射開始時から被加工領域の除去までの
時間が測定されることとなる。その他の構成および作用
は実施例１と同様である。That is, while the measurement laser beam M is applied obliquely from above to the processing region, the pin photodiode 6 is arranged so as to face the direction in which the measurement laser beam M is reflected by the workpiece W. Then, a signal corresponding to the amount of reflection of the measurement laser beam M associated with the removal of the region to be processed by the processing laser beam L is sent from the pin photodiode 6 to the oscilloscope 8 in FIG. The time from the start to the removal of the processed region will be measured. Other configurations and operations are similar to those of the first embodiment.
【００３３】[0033]
【発明の効果】以上詳述したように、この発明によれ
ば、レーザビームの照射開始時から前記被加工領域の除
去完了までの時間を測定する時間測定手段と、この時間
測定手段により測定された時間に基づき、前記レーザビ
ームの照射条件を最適化する条件制御手段とを備えてな
るから、被加工物の膜構成のバラツキの如何にかかわら
ず、常に最適な加工条件下でレーザビーム加工を行うこ
とができ、加工不足および下層の損傷がなくなること
で、光起電力装置を安定した特性で製造することができ
る。As described above in detail, according to the present invention, the time measuring means for measuring the time from the start of the irradiation of the laser beam to the completion of the removal of the region to be processed, and the time measuring means. Since it is provided with a condition control means for optimizing the laser beam irradiation conditions based on the time, the laser beam processing is always performed under the optimum processing conditions regardless of variations in the film configuration of the workpiece. Since it can be carried out, and lack of processing and damage to the lower layer are eliminated, the photovoltaic device can be manufactured with stable characteristics.
【図１】この発明に係る実施例１である光起電力装置の
製造装置の構成を示すブロック図である。FIG. 1 is a block diagram showing a configuration of a photovoltaic device manufacturing apparatus that is Embodiment 1 of the present invention.
【図２】同製造装置におけるレーザビーム照射開始時よ
り被加工領域の除去までの時間測定手段を示すブロック
図である。FIG. 2 is a block diagram showing a time measuring means from the start of laser beam irradiation to the removal of a region to be processed in the manufacturing apparatus.
【図３】同時間測定手段により検出される測定用レーザ
ビームＭの被加工領域通過強度の信号を示す線図であ
る。FIG. 3 is a diagram showing a signal of a processing region passing intensity of a measuring laser beam M detected by the time measuring unit.
【図４】この発明に係る実施例２の製造装置における時
間測定手段の検知部の構成を示す図である。FIG. 4 is a diagram showing a configuration of a detection unit of a time measuring means in a manufacturing apparatus according to a second embodiment of the present invention.
【図５】この発明に係る実施例３の製造装置における時
間測定手段の検知部の構成を示す図である。FIG. 5 is a diagram showing a configuration of a detection unit of a time measuring means in a manufacturing apparatus according to a third embodiment of the present invention.
【図６】従来の光起電力装置の製造装置の構成を示す概
略図である。FIG. 6 is a schematic view showing a configuration of a conventional photovoltaic device manufacturing apparatus.
１ レーザ発振器（加工用レーザ） ２ 光学系 ３ 時間測定手段 ４ 条件制御手段 ５ Ｈｅ−Ｎｅレーザ（時間測定用レーザ） Ｌ 加工用レーザビーム Ｍ 測定用レーザビーム 1 laser oscillator (processing laser) 2 optical system 3 time measuring means 4 condition controlling means 5 He-Ne laser (time measuring laser) L processing laser beam M measuring laser beam
Claims (1)
照射して、この被加工領域を除去する工程を行う光起電
力装置の製造装置において、前記レーザビームの照射開
始時から前記被加工領域の除去完了までの時間を測定す
る時間測定手段と、この時間測定手段により測定された
時間に基づき、前記レーザビームの照射条件を最適化す
る条件制御手段とを備えてなることを特徴とする光起電
力装置の製造装置。1. A manufacturing apparatus for a photovoltaic device, which performs a step of irradiating a region to be processed of a workpiece with a laser beam and removing the region to be processed, wherein the workpiece is processed from the start of irradiation of the laser beam. It is characterized by comprising time measuring means for measuring the time until completion of removal of the region, and condition control means for optimizing the irradiation conditions of the laser beam based on the time measured by the time measuring means. Manufacturing equipment for photovoltaic devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3253174A JPH0563222A (en) | 1991-09-03 | 1991-09-03 | Manufacturing equipment of photovoltaic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3253174A JPH0563222A (en) | 1991-09-03 | 1991-09-03 | Manufacturing equipment of photovoltaic apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0563222A true JPH0563222A (en) | 1993-03-12 |
Family
ID=17247570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3253174A Pending JPH0563222A (en) | 1991-09-03 | 1991-09-03 | Manufacturing equipment of photovoltaic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0563222A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5472600A (en) * | 1977-11-21 | 1979-06-11 | Toshiba Corp | Laser processing method |
| JPS6366931A (en) * | 1986-09-08 | 1988-03-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS6483390A (en) * | 1987-09-24 | 1989-03-29 | Nec Corp | Laser beam machine |
| JPH03154385A (en) * | 1989-11-13 | 1991-07-02 | Mitsubishi Heavy Ind Ltd | Manufacture of photovoltaic generator |
-
1991
- 1991-09-03 JP JP3253174A patent/JPH0563222A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5472600A (en) * | 1977-11-21 | 1979-06-11 | Toshiba Corp | Laser processing method |
| JPS6366931A (en) * | 1986-09-08 | 1988-03-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS6483390A (en) * | 1987-09-24 | 1989-03-29 | Nec Corp | Laser beam machine |
| JPH03154385A (en) * | 1989-11-13 | 1991-07-02 | Mitsubishi Heavy Ind Ltd | Manufacture of photovoltaic generator |
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