JPH0565632A - インジウム−錫−酸化物を基板に被覆する装置 - Google Patents

インジウム−錫−酸化物を基板に被覆する装置

Info

Publication number: JPH0565632A
Authority: JP; Japan
Prior art keywords: target; substrate; indium; coating; sputtered
Prior art date: 1991-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP4044612A

Other languages

English (en)

Japanese (ja)

Inventor

Michael Schanz

シヤンツミヒヤエル

Rudolf Latz

ラツツルードルフ

Michael Dr Scherer

シエーラーミヒヤエル

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Balzers und Leybold Deutschland Holding AG

Original Assignee

Leybold AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-03-04

Filing date

1992-03-02

Publication date

1993-03-19

1992-03-02 Application filed by Leybold AG filed Critical Leybold AG

1993-03-19 Publication of JPH0565632A publication Critical patent/JPH0565632A/ja

Status Pending legal-status Critical Current

Links

238000000576 coating method Methods 0.000 title claims abstract description 17
239000011248 coating agent Substances 0.000 title claims abstract description 16
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
229910003437 indium oxide Inorganic materials 0.000 title 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title 1
229910001887 tin oxide Inorganic materials 0.000 title 1
239000000758 substrate Substances 0.000 claims abstract description 17
239000002245 particle Substances 0.000 claims abstract description 8
239000012495 reaction gas Substances 0.000 claims abstract description 4
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
238000010438 heat treatment Methods 0.000 claims description 4
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 2
238000007254 oxidation reaction Methods 0.000 abstract 1
238000004544 sputter deposition Methods 0.000 description 10
238000000034 method Methods 0.000 description 9
239000003990 capacitor Substances 0.000 description 3
239000007789 gas Substances 0.000 description 3
238000002955 isolation Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000005684 electric field Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
230000001965 increasing effect Effects 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
230000007774 longterm Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000010891 electric arc Methods 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000005596 ionic collisions Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000007769 metal material Substances 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
239000002887 superconductor Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)

JP4044612A 1991-03-04 1992-03-02 インジウム−錫−酸化物を基板に被覆する装置 Pending JPH0565632A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE4106771.1		1991-03-04
DE4106771A DE4106771A1 (de)	1991-03-04	1991-03-04	Vorrichtung zum beschichten eines substrats, vorzugsweise zum beschichten von flachglas, mit einer indium-zinn-oxid-schicht

Publications (1)

Publication Number	Publication Date
JPH0565632A true JPH0565632A (ja)	1993-03-19

Family

ID=6426381

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4044612A Pending JPH0565632A (ja)	1991-03-04	1992-03-02	インジウム−錫−酸化物を基板に被覆する装置

Country Status (5)

Country	Link
JP (1)	JPH0565632A (de)
BE (1)	BE1006649A3 (de)
CH (1)	CH684000A5 (de)
DE (1)	DE4106771A1 (de)
FI (1)	FI920457A7 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10018842C2 (de) *	2000-04-14	2002-03-21	Ardenne Anlagentech Gmbh	Verfahren zum Aufbringen von TCO-Schichten auf Substrate
EP2360290A1 (de) *	2010-02-11	2011-08-24	Applied Materials, Inc.	Verfahren zur Herstellung einer ITO-Schicht und Sputtersystem

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1365492A (en) *	1971-02-05	1974-09-04	Triplex Safety Glass Co	Metal oxide films
US4318796A (en) *	1980-07-15	1982-03-09	Murata Manufacturing Co., Ltd.	Sputtering apparatus
DE3210351A1 (de) *	1982-03-20	1983-09-22	Leybold-Heraeus GmbH, 5000 Köln	Verfahren und vorrichtung zum herstellen von magnetischen aufzeichnungsschichten

1991
- 1991-03-04 DE DE4106771A patent/DE4106771A1/de not_active Withdrawn
- 1991-10-24 CH CH3112/91A patent/CH684000A5/de not_active IP Right Cessation
1992
- 1992-01-15 BE BE9200035A patent/BE1006649A3/fr not_active IP Right Cessation
- 1992-02-03 FI FI920457A patent/FI920457A7/fi unknown
- 1992-03-02 JP JP4044612A patent/JPH0565632A/ja active Pending

Also Published As

Publication number	Publication date
FI920457A7 (fi)	1992-09-05
BE1006649A3 (fr)	1994-11-08
CH684000A5 (de)	1994-06-30
FI920457A0 (fi)	1992-02-03
DE4106771A1 (de)	1992-09-10

Publication	Publication Date	Title
US4299678A (en)	1981-11-10	Magnetic target plate for use in magnetron sputtering of magnetic films
EP1038045B1 (de)	2013-11-13	Verfahren zum magnetverstärkten sputtern
US5431799A (en)	1995-07-11	Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
US4610770A (en)	1986-09-09	Method and apparatus for sputtering
US4324631A (en)	1982-04-13	Magnetron sputtering of magnetic materials
US4013532A (en)	1977-03-22	Method for coating a substrate
US4179351A (en)	1979-12-18	Cylindrical magnetron sputtering source
JP3397786B2 (ja)	2003-04-21	マグネトロンスパッタイオンプレーティング
EP0285668B1 (de)	1994-05-25	Vorrichtung zur bildung dünner folien
US6238537B1 (en)	2001-05-29	Ion assisted deposition source
JPH04136177A (ja)	1992-05-11	マイクロ波プラズマ処理装置
JPH0641739A (ja)	1994-02-15	高真空・高速イオン処理装置
JPH0565632A (ja)	1993-03-19	インジウム−錫−酸化物を基板に被覆する装置
RU2101383C1 (ru)	1998-01-10	Способ катодного распыления
CN117385329A (zh)	2024-01-12	磁控溅射镀膜装置
US3801719A (en)	1974-04-02	Emitter block assembly
JPH01139762A (ja)	1989-06-01	スパッタリング装置
KR100951007B1 (ko)	2010-04-02	마그네트론 스퍼터링 장치
JPH0488165A (ja)	1992-03-23	スパッタ型イオン源
JP3784203B2 (ja)	2006-06-07	マグネトロンスパッタ方法と装置
JPH05230651A (ja)	1993-09-07	スパッタ成膜基板ホルダ−
JPS6127464B2 (de)	1986-06-25
JPH03215664A (ja)	1991-09-20	薄膜形成装置
JPH07107189B2 (ja)	1995-11-15	薄膜形成装置
JP2777657B2 (ja)	1998-07-23	プラズマ付着装置