JPH0568098B2 - - Google Patents

Info

Publication number: JPH0568098B2
Authority: JP; Japan
Prior art keywords: film; silicon; oxide film; substrate; insulating film
Prior art date: 1988-07-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP63176720A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0227717A (ja

Inventor

Shuichi Samata

Morya Myashita

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-07-15

Filing date

1988-07-15

Publication date

1993-09-28

1988-07-15 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1988-07-15 Priority to JP63176720A priority Critical patent/JPH0227717A/ja

1990-01-30 Publication of JPH0227717A publication Critical patent/JPH0227717A/ja

1993-09-28 Publication of JPH0568098B2 publication Critical patent/JPH0568098B2/ja

Status Granted legal-status Critical Current

Links

238000000034 method Methods 0.000 claims description 39
229910052710 silicon Inorganic materials 0.000 claims description 34
239000010703 silicon Substances 0.000 claims description 34
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
239000000758 substrate Substances 0.000 claims description 31
239000004065 semiconductor Substances 0.000 claims description 26
238000004519 manufacturing process Methods 0.000 claims description 22
238000009792 diffusion process Methods 0.000 claims description 15
238000004506 ultrasonic cleaning Methods 0.000 claims description 9
238000007740 vapor deposition Methods 0.000 claims description 3
239000010408 film Substances 0.000 description 106
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
229910052814 silicon oxide Inorganic materials 0.000 description 28
239000005380 borophosphosilicate glass Substances 0.000 description 22
239000007789 gas Substances 0.000 description 19
229910021421 monocrystalline silicon Inorganic materials 0.000 description 18
229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
239000000428 dust Substances 0.000 description 13
239000012535 impurity Substances 0.000 description 12
238000005229 chemical vapour deposition Methods 0.000 description 9
238000006243 chemical reaction Methods 0.000 description 8
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
229910052581 Si3N4 Inorganic materials 0.000 description 7
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
229910045601 alloy Inorganic materials 0.000 description 6
239000000956 alloy Substances 0.000 description 6
239000003990 capacitor Substances 0.000 description 6
239000011521 glass Substances 0.000 description 6
238000007796 conventional method Methods 0.000 description 5
238000000151 deposition Methods 0.000 description 5
238000005468 ion implantation Methods 0.000 description 4
239000002245 particle Substances 0.000 description 4
239000010409 thin film Substances 0.000 description 4
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
238000000137 annealing Methods 0.000 description 3
230000007547 defect Effects 0.000 description 3
238000002955 isolation Methods 0.000 description 3
229910052698 phosphorus Inorganic materials 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
238000001556 precipitation Methods 0.000 description 3
230000003068 static effect Effects 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
230000008021 deposition Effects 0.000 description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
238000001259 photo etching Methods 0.000 description 2
229910000676 Si alloy Inorganic materials 0.000 description 1
CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical group [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
230000003749 cleanliness Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
230000002209 hydrophobic effect Effects 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000012528 membrane Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
238000000059 patterning Methods 0.000 description 1
239000012495 reaction gas Substances 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Landscapes

Electrodes Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Memories (AREA)

JP63176720A 1988-07-15 1988-07-15 半導体装置の製造方法 Granted JPH0227717A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP63176720A JPH0227717A (ja)	1988-07-15	1988-07-15	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP63176720A JPH0227717A (ja)	1988-07-15	1988-07-15	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPH0227717A JPH0227717A (ja)	1990-01-30
JPH0568098B2 true JPH0568098B2 (fr)	1993-09-28

Family

ID=16018598

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP63176720A Granted JPH0227717A (ja)	1988-07-15	1988-07-15	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPH0227717A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5200358A (en) *	1991-11-15	1993-04-06	At&T Bell Laboratories	Integrated circuit with planar dielectric layer
KR930020669A (ko) *	1992-03-04	1993-10-20	김광호	고집적 반도체장치 및 그 제조방법

1988
- 1988-07-15 JP JP63176720A patent/JPH0227717A/ja active Granted

Also Published As

Publication number	Publication date
JPH0227717A (ja)	1990-01-30

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Legal Events

Date	Code	Title	Description
2003-09-28	LAPS	Cancellation because of no payment of annual fees