JPH0569325B2 - - Google Patents

Info

Publication number: JPH0569325B2
Authority: JP; Japan
Prior art keywords: voltage; diffusion layer; gate electrode; terminals; channel resistance
Prior art date: 1986-09-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61210175A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6365706A (ja

Inventor

Kuniaki Koyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-05

Filing date

1986-09-05

Publication date

1993-09-30

1986-09-05 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1986-09-05 Priority to JP61210175A priority Critical patent/JPS6365706A/ja

1988-03-24 Publication of JPS6365706A publication Critical patent/JPS6365706A/ja

1993-09-30 Publication of JPH0569325B2 publication Critical patent/JPH0569325B2/ja

Status Granted legal-status Critical Current

Links

238000009792 diffusion process Methods 0.000 claims description 31
239000004065 semiconductor Substances 0.000 claims description 7
239000000758 substrate Substances 0.000 claims description 6
239000000284 extract Substances 0.000 claims description 2
239000010410 layer Substances 0.000 description 28
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
238000010586 diagram Methods 0.000 description 4
230000000694 effects Effects 0.000 description 3
239000011229 interlayer Substances 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
229920005591 polysilicon Polymers 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
238000005530 etching Methods 0.000 description 2
239000012535 impurity Substances 0.000 description 2
238000000034 method Methods 0.000 description 2
238000007796 conventional method Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1

Landscapes

Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Attenuators (AREA)

JP61210175A 1986-09-05 1986-09-05 電圧分圧回路 Granted JPS6365706A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61210175A JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61210175A JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Publications (2)

Publication Number	Publication Date
JPS6365706A JPS6365706A (ja)	1988-03-24
JPH0569325B2 true JPH0569325B2 (2)	1993-09-30

Family

ID=16585021

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61210175A Granted JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Country Status (1)

Country	Link
JP (1)	JPS6365706A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0422168A (ja) *	1990-05-17	1992-01-27	Nec Corp	分圧回路

1986
- 1986-09-05 JP JP61210175A patent/JPS6365706A/ja active Granted

Also Published As

Publication number	Publication date
JPS6365706A (ja)	1988-03-24

Similar Documents

Publication	Publication Date	Title
US6369409B1 (en)	2002-04-09	Semiconductor device and method of manufacturing the same
JPS5951141B2 (ja)	1984-12-12	選局装置
US5665991A (en)	1997-09-09	Device having current ballasting and busing over active area using a multi-level conductor process
US4423433A (en)	1983-12-27	High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
US3803461A (en)	1974-04-09	Semiconductor arrangements
US4890191A (en)	1989-12-26	Integrated circuits
US4316202A (en)	1982-02-16	Semiconductor integrated circuit device having a Schottky barrier diode
US3975718A (en)	1976-08-17	Semiconductor arrangement, particularly a storage arrangement with field effect transistors, and method of operating the same
US3414740A (en)	1968-12-03	Integrated insulated gate field effect logic circuitry
JPH05275613A (ja)	1993-10-22	積層型半導体装置
KR100225944B1 (ko)	1999-10-15	가변 드레인 전류형 트랜지스터를 갖는 반도체 장치
JPS6365706A (ja)	1988-03-24	電圧分圧回路
US5270566A (en)	1993-12-14	Insulated gate semiconductor device
US20060033164A1 (en)	2006-02-16	Semiconductor device
JPH06103735B2 (ja)	1994-12-14	半導体集積回路
JPS60244058A (ja)	1985-12-03	半導体集積回路装置
JPS6342532Y2 (2)	1988-11-08
JP2956181B2 (ja)	1999-10-04	抵抗素子を有する半導体装置
JPH0473960A (ja)	1992-03-09	半導体集積回路
JPH036858A (ja)	1991-01-14	マスタスライス方式半導体集積回路装置
KR100493587B1 (ko)	2006-06-21	반도체장치및그제조방법
JP2605753B2 (ja)	1997-04-30	縦形バイポーラトランジスタ
JPS61224348A (ja)	1986-10-06	半導体集積回路装置
JPS5812343A (ja)	1983-01-24	半導体装置
JPS5844601Y2 (ja)	1983-10-08	デュアル型電界効果トランジスタ