JPS6365706A - 電圧分圧回路 - Google Patents

電圧分圧回路

Info

Publication number: JPS6365706A
Authority: JP; Japan
Prior art keywords: voltage; diffusion layer; gate electrode; electrode; gate
Prior art date: 1986-09-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP61210175A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0569325B2 (2

Inventor

Kuniaki Koyama

小山　邦明

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-05

Filing date

1986-09-05

Publication date

1988-03-24

1986-09-05 Application filed by NEC Corp filed Critical NEC Corp

1986-09-05 Priority to JP61210175A priority Critical patent/JPS6365706A/ja

1988-03-24 Publication of JPS6365706A publication Critical patent/JPS6365706A/ja

1993-09-30 Publication of JPH0569325B2 publication Critical patent/JPH0569325B2/ja

Status Granted legal-status Critical Current

Links

238000009792 diffusion process Methods 0.000 claims abstract description 31
239000004065 semiconductor Substances 0.000 claims abstract description 7
239000000758 substrate Substances 0.000 claims abstract description 7
239000000284 extract Substances 0.000 claims description 2
239000010410 layer Substances 0.000 abstract description 32
229910052782 aluminium Inorganic materials 0.000 abstract description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
239000011229 interlayer Substances 0.000 abstract description 3
238000009413 insulation Methods 0.000 abstract 1
229910052751 metal Inorganic materials 0.000 description 5
239000002184 metal Substances 0.000 description 5
238000010586 diagram Methods 0.000 description 4
230000000694 effects Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
239000012535 impurity Substances 0.000 description 2
238000000034 method Methods 0.000 description 2
238000007796 conventional method Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1

Landscapes

Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Attenuators (AREA)

JP61210175A 1986-09-05 1986-09-05 電圧分圧回路 Granted JPS6365706A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61210175A JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61210175A JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Publications (2)

Publication Number	Publication Date
JPS6365706A true JPS6365706A (ja)	1988-03-24
JPH0569325B2 JPH0569325B2 (2)	1993-09-30

Family

ID=16585021

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61210175A Granted JPS6365706A (ja)	1986-09-05	1986-09-05	電圧分圧回路

Country Status (1)

Country	Link
JP (1)	JPS6365706A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0422168A (ja) *	1990-05-17	1992-01-27	Nec Corp	分圧回路

1986
- 1986-09-05 JP JP61210175A patent/JPS6365706A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0422168A (ja) *	1990-05-17	1992-01-27	Nec Corp	分圧回路

Also Published As

Publication number	Publication date
JPH0569325B2 (2)	1993-09-30

Similar Documents

Publication	Publication Date	Title
US5196373A (en)	1993-03-23	Method of making trench conductor and crossunder architecture
US5773899A (en)	1998-06-30	Bonding pad for a semiconductor chip
KR940006179A (ko)	1994-03-23	반도체 장치와 그 제작방법
US5665991A (en)	1997-09-09	Device having current ballasting and busing over active area using a multi-level conductor process
US5057895A (en)	1991-10-15	Trench conductor and crossunder architecture
US4890191A (en)	1989-12-26	Integrated circuits
US3975718A (en)	1976-08-17	Semiconductor arrangement, particularly a storage arrangement with field effect transistors, and method of operating the same
US6815798B2 (en)	2004-11-09	Integrated capacitor for sensing the voltage applied to a terminal of an integrated or discrete power device on a semiconductor substrate
JP2006332428A (ja)	2006-12-07	半導体集積回路装置
US5270566A (en)	1993-12-14	Insulated gate semiconductor device
KR100225944B1 (ko)	1999-10-15	가변 드레인 전류형 트랜지스터를 갖는 반도체 장치
JPH11307745A (ja)	1999-11-05	非揮発性半導体素子及びその製造方法
JPH0569325B2 (2)	1993-09-30
JP2000150778A (ja)	2000-05-30	ポリシリコン抵抗素子
JPH0473960A (ja)	1992-03-09	半導体集積回路
JPH02137256A (ja)	1990-05-25	半導体集積回路
US20060033164A1 (en)	2006-02-16	Semiconductor device
JPS6342532Y2 (2)	1988-11-08
JPS61224348A (ja)	1986-10-06	半導体集積回路装置
JPS5812343A (ja)	1983-01-24	半導体装置
JPH05110075A (ja)	1993-04-30	絶縁ゲート型電界効果トランジスタ
JPS60244058A (ja)	1985-12-03	半導体集積回路装置
JPS6146042A (ja)	1986-03-06	半導体装置
JPH02151065A (ja)	1990-06-11	Ｍｏｓ集積回路
JPS63131568A (ja)	1988-06-03	半導体メモリ装置