JPH0573324B2 - - Google Patents

Info

Publication number
JPH0573324B2
JPH0573324B2 JP18214287A JP18214287A JPH0573324B2 JP H0573324 B2 JPH0573324 B2 JP H0573324B2 JP 18214287 A JP18214287 A JP 18214287A JP 18214287 A JP18214287 A JP 18214287A JP H0573324 B2 JPH0573324 B2 JP H0573324B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon
layer
opening
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP18214287A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6427221A (en
Inventor
Kazuyuki Sugahara
Tadashi Nishimura
Shigeru Kusunoki
Yasuaki Inoe
Yasuo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP18214287A priority Critical patent/JPS6427221A/ja
Publication of JPS6427221A publication Critical patent/JPS6427221A/ja
Publication of JPH0573324B2 publication Critical patent/JPH0573324B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP18214287A 1987-07-23 1987-07-23 Manufacture of laminated type semiconductor device Granted JPS6427221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18214287A JPS6427221A (en) 1987-07-23 1987-07-23 Manufacture of laminated type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18214287A JPS6427221A (en) 1987-07-23 1987-07-23 Manufacture of laminated type semiconductor device

Publications (2)

Publication Number Publication Date
JPS6427221A JPS6427221A (en) 1989-01-30
JPH0573324B2 true JPH0573324B2 (de) 1993-10-14

Family

ID=16113085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18214287A Granted JPS6427221A (en) 1987-07-23 1987-07-23 Manufacture of laminated type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6427221A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005022306B4 (de) * 2004-05-17 2009-12-31 Samsung Electronics Co., Ltd., Suwon Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Fin-Feldeffekttransistor (FinFET)
JP4510707B2 (ja) * 2004-09-08 2010-07-28 三星電子株式会社 エピタキシャル膜の形成方法と、これを用いた薄膜形成方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6427221A (en) 1989-01-30

Similar Documents

Publication Publication Date Title
US5128732A (en) Stacked semiconductor device
US4874718A (en) Method for forming SOI film
JPS643045B2 (de)
WO2003023866A1 (en) Thin film semiconductor device and method for fabricating the same
JP4203141B2 (ja) 非晶質シリコン層の結晶化方法及びこれを使用する薄膜トランジスターの製造方法
JPS5939790A (ja) 単結晶の製造方法
JPS62160712A (ja) 半導体装置の製造方法
JPH0438141B2 (de)
KR100818285B1 (ko) 단결정 실리콘 로드 제조방법
JPH01168050A (ja) 積層型半導体装置
JPS6342417B2 (de)
JPS643046B2 (de)
JPS5880831A (ja) 半導体装置用基板の製造方法
JPH043459A (ja) 積層型半導体装置の製造方法
JPS63300510A (ja) 積層型半導体装置
JPS5939791A (ja) 単結晶の製造方法
JPH0560668B2 (de)
JP3291845B2 (ja) 結晶成長方法およびｍｏｓトランジスタのチャネル形成方法
JPH0368532B2 (de)
JPH0257337B2 (de)
JPH0574706A (ja) 単結晶半導体膜の製造方法
JPH04299518A (ja) 半導体装置およびその製造方法
JPS6362893B2 (de)
JPS59224114A (ja) 単結晶半導体薄膜の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term