JPH057358B2 - - Google Patents

Info

Publication number: JPH057358B2
Authority: JP; Japan
Prior art keywords: film; single crystal; substrate; insulating film; present
Prior art date: 1988-04-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP8824188A

Other languages

English (en)

Japanese (ja)

Other versions

JPH01261300A (ja

Inventor

Tetsuo Nakamura

Makoto Ishida

Akira Namiki

Hideto Kanba

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toyoko Kagaku Co Ltd

Original Assignee

Toyoko Kagaku Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-04-12

Filing date

1988-04-12

Publication date

1993-01-28

1988-04-12 Application filed by Toyoko Kagaku Co Ltd filed Critical Toyoko Kagaku Co Ltd

1988-04-12 Priority to JP8824188A priority Critical patent/JPH01261300A/ja

1989-10-18 Publication of JPH01261300A publication Critical patent/JPH01261300A/ja

1993-01-28 Publication of JPH057358B2 publication Critical patent/JPH057358B2/ja

Status Granted legal-status Critical Current

Links

229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 21
239000013078 crystal Substances 0.000 claims description 12
239000000758 substrate Substances 0.000 claims description 12
238000000034 method Methods 0.000 claims description 9
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
238000001947 vapour-phase growth Methods 0.000 claims description 3
239000007789 gas Substances 0.000 description 5
238000010438 heat treatment Methods 0.000 description 5
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
229910052594 sapphire Inorganic materials 0.000 description 4
239000010980 sapphire Substances 0.000 description 4
238000002128 reflection high energy electron diffraction Methods 0.000 description 3
238000010894 electron beam technology Methods 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
238000000864 Auger spectrum Methods 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000000635 electron micrograph Methods 0.000 description 1
238000001941 electron spectroscopy Methods 0.000 description 1
230000006698 induction Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
239000001272 nitrous oxide Substances 0.000 description 1
239000012495 reaction gas Substances 0.000 description 1
238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000000927 vapour-phase epitaxy Methods 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP8824188A 1988-04-12 1988-04-12 減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法 Granted JPH01261300A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP8824188A JPH01261300A (ja)	1988-04-12	1988-04-12	減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP8824188A JPH01261300A (ja)	1988-04-12	1988-04-12	減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法

Publications (2)

Publication Number	Publication Date
JPH01261300A JPH01261300A (ja)	1989-10-18
JPH057358B2 true JPH057358B2 (de)	1993-01-28

Family

ID=13937363

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8824188A Granted JPH01261300A (ja)	1988-04-12	1988-04-12	減圧気相成長法によるＳｉ基板上へのＡｌ↓２Ｏ↓３単結晶膜のヘテロエピタキシャル成長方法

Country Status (1)

Country	Link
JP (1)	JPH01261300A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1037272A4 (de)	1997-06-19	2004-07-28	Asahi Chemical Ind	Silizium auf isolator (soi) substrat und halbleitenbauelement und verfahren zum deren herstellung
JP4654439B2 (ja) *	2005-09-20	2011-03-23	国立大学法人豊橋技術科学大学	金属酸化物薄膜の形成方法

1988
- 1988-04-12 JP JP8824188A patent/JPH01261300A/ja active Granted

Also Published As

Publication number	Publication date
JPH01261300A (ja)	1989-10-18

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Legal Events

Date	Code	Title	Description
2005-03-15	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-10-11	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-12-12	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2008-01-28	LAPS	Cancellation because of no payment of annual fees