JPH058672Y2 - - Google Patents

Info

Publication number
JPH058672Y2
JPH058672Y2 JP1986146114U JP14611486U JPH058672Y2 JP H058672 Y2 JPH058672 Y2 JP H058672Y2 JP 1986146114 U JP1986146114 U JP 1986146114U JP 14611486 U JP14611486 U JP 14611486U JP H058672 Y2 JPH058672 Y2 JP H058672Y2
Authority
JP
Japan
Prior art keywords
reaction tube
susceptor
reaction
vapor phase
shaft member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986146114U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351432U (it
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986146114U priority Critical patent/JPH058672Y2/ja
Publication of JPS6351432U publication Critical patent/JPS6351432U/ja
Application granted granted Critical
Publication of JPH058672Y2 publication Critical patent/JPH058672Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1986146114U 1986-09-24 1986-09-24 Expired - Lifetime JPH058672Y2 (it)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986146114U JPH058672Y2 (it) 1986-09-24 1986-09-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986146114U JPH058672Y2 (it) 1986-09-24 1986-09-24

Publications (2)

Publication Number Publication Date
JPS6351432U JPS6351432U (it) 1988-04-07
JPH058672Y2 true JPH058672Y2 (it) 1993-03-04

Family

ID=31058281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986146114U Expired - Lifetime JPH058672Y2 (it) 1986-09-24 1986-09-24

Country Status (1)

Country Link
JP (1) JPH058672Y2 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6090183B2 (ja) * 2014-01-23 2017-03-08 信越半導体株式会社 気相成長装置の清掃又は点検方法及びエピタキシャルウェーハの製造方法
JP6356004B2 (ja) * 2014-08-05 2018-07-11 住友化学株式会社 反応容器の密閉構造、および基板処理装置

Also Published As

Publication number Publication date
JPS6351432U (it) 1988-04-07

Similar Documents

Publication Publication Date Title
JP2778574B2 (ja) 半導体用製造装置
JPH02138473A (ja) 縦型熱処理装置
US5131842A (en) Corrosion resistant thermal treating apparatus
JPH04308090A (ja) 気相化学反応生成装置のロードロック機構
JPS60184678A (ja) 真空処理装置
JPH021116A (ja) 熱処理装置
JP4063661B2 (ja) 半導体製造装置及び半導体の製造法
JP7163764B2 (ja) 気相成長装置
JP4677088B2 (ja) グラファイトナノファイバー薄膜形成用熱ｃｖｄ装置
JP2715817B2 (ja) 薄膜気相成長装置
JP7188256B2 (ja) 気相成長方法及び気相成長装置
JPH01309315A (ja) 熱処理装置
JP2002305190A (ja) 熱処理装置及びその清浄方法
JPH04202091A (ja) 化合物半導体の気相成長装置
JPH071789Y2 (ja) 縦型気相成長装置
JPH0574712A (ja) 有機金属気相成長装置
JPH1192280A (ja) シリコンエピタキシャル気相成長装置
JPH0512279Y2 (it)
US5509967A (en) Heat treatment apparatus
JP2714576B2 (ja) 熱処理装置
JP2002008997A (ja) 半導体装置の製造方法及びその装置
JPS63299115A (ja) 気相成長装置
JP4627860B2 (ja) グラファイトナノファイバー薄膜形成用熱ｃｖｄ装置
JPH0831756A (ja) 半導体製造装置の反応炉
JPH11214377A (ja) 縦型減圧気相成長装置とこれを用いた気相成長方法