JPH0590146A - Beam aligner - Google Patents

Abstract

(57) [Abstract] [Purpose] A plurality of semiconductor chips and the like can be exposed at the same time, and a semiconductor wafer and the like can be exposed in a short time. The beam exposure apparatus 11 has beam guns 13 each having a theoretical yield number for emitting a beam 14, and the beam gun 13 is covered with a shield 17 having a passage port 18.
Only the beam 14 passing through the passage opening 18 and reflected by the half mirror 23 is deflected by the deflecting device 21 and is incident on the semiconductor chip 16 of the semiconductor wafer 15. Therefore, the theoretical yield number of semiconductor chips 16 can be simultaneously exposed by the separate beams 14 deflected by the respective deflecting devices 21.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a beam exposure apparatus for exposing a semiconductor wafer or the like with an electron beam, an ion beam or the like.

[0002]

2. Description of the Related Art Beam exposure apparatuses have been used to overcome the limitations of photolithography for miniaturization of semiconductor devices and to carry out maskless etching and the like. In this beam exposure apparatus, conventionally, a beam is emitted by a single beam gun, and the beam is irradiated onto a semiconductor wafer or the like while being deflected by a deflection means (for example, "Monthly Semi").
director World "Press Journal, Inc. (1985.5) p. 120-126).

[0003]

However, if a single beam gun is used, it takes a long time to complete the exposure of all the semiconductor chips on the semiconductor wafer, and the semiconductor device can be manufactured with high efficiency. I can't.

[0004]

A beam exposure apparatus 11 according to the present invention has a plurality of beam guns 13 each for emitting a beam 14 and a plurality of passage openings 18 corresponding to the plurality of beam guns 13. And a shield 17 for shielding the beam 14 incident on a portion other than the plurality of passage openings 18.
And a plurality of deflection means 21 corresponding to the plurality of passage openings 18 and for deflecting the beam 14 that has passed through the plurality of passage openings 18.

[0005]

In the beam exposure apparatus 11 according to the present invention, the divergence of the beam 14 emitted from each of the plurality of beam guns 13 is limited by the shield 17, and the plurality of passage openings 18 of the shield 17 and the plurality of deflecting means are provided. 21 and 21 are paired with each other, it is possible to simultaneously expose a plurality of semiconductor chips 16 and the like by the separate beams 14 deflected by the respective deflection means 21.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

In the beam exposure apparatus 11 of this embodiment, as shown in FIGS.
From the base 12 so as to project downward or obliquely downward,
A plurality of beam guns 13 are provided. The beam guns 13 each emit a beam 14 such as an electron beam or an ion beam, and the number of beam guns 13 is set equal to the theoretical yield, that is, the number of semiconductor chips 16 that can be obtained from one semiconductor wafer 15. is there.

As shown in FIGS. 1 and 3, the beam gun 13 is covered with a planetarium-shaped shield 17.
The shield 17 is provided with a plurality of passage openings 18 corresponding to 3 and considering the incident angle of the beam 14. For this reason, only the beam 14 with extremely accurate alignment and registration passes through the shield 17, and even if an error occurs in these adjustments, the influence on the semiconductor wafer 15 can be reliably prevented.

Below the shield 17, a plurality of deflecting devices 21 corresponding to the passage ports 18 are provided. Deflection device 2
Reference numeral 1 is supported by a deflection angle variable arm 22 and a reflection angle variable arm 2 to which a half mirror 23 is attached.
Deflection devices 4 are arranged in pairs.

As shown in FIG. 4, the deflection device 21 has four stages of deflection coils 21a to 21d. Half mirror 2
Beam 14 which is reflected by 3 and is incident on the deflecting device 21
Is subjected to dynamic focusing by deflection by the deflection coil 21a, that is, alignment adjustment, focus adjustment is performed by focusing by the deflection coil 21b, tuning of focusing and linearity is performed by the deflection coil 21c, and 0. Fine tuning is applied so that the design rule of about 1 μm can be supported.

The deflection device 21 and the semiconductor wafer 15 are basically perpendicular to each other, but the beam 14 is emitted from the beam gun 13 by changing the angles of the deflection angle variable arm 22 and the reflection angle variable arm 24. The beam 14 can be obliquely incident on the semiconductor wafer 15 without changing the angle. Therefore, the semiconductor wafer 15 can be etched by the beam 14.

The computer recognizes the size of the semiconductor wafer 15, the theoretical yield, the size of the semiconductor chip 16 and the scribe position, and the deflection coils 21a to 21d.
The computer controls the deflection magnetic field, the focusing magnetic field, the deflection distance and the focusing distance, the angles of the deflection angle variable arm 22 and the reflection angle variable arm 24, etc., in a fully automatic manner in a moment. Also,
These controls can be performed independently for each beam 14.

The beam exposure apparatus 11 of this embodiment as described above
Is a variable deflection angle arm 22 and a variable reflection angle arm 24.
Therefore, it is possible to selectively use the beam collective exposure and the beam drawing.

For example, in order to perform the collective beam exposure on the semiconductor wafer 15, if the beam 14 is an electron beam, PMMA (polymethylmethacrylate) or the like is used for the positive type, and EPB (epoxidized polybutadiene) is used for the negative type. An electron beam resist such as the above is applied to the semiconductor wafer 15.

Then, the semiconductor wafer 15 is transferred to the bottom of the beam exposure apparatus 11 by a fully automatic transfer arm 25,
Each of the theoretical yield number beams 14 of the semiconductor wafer 15 is
Quadrature balanced modulation of one frame is performed in 1/30 seconds by the horizontal synchronizing signal flowing through the deflection coils 21a to 21d. Therefore, if the theoretical yield number is 24, the semiconductor wafer 15 can be exposed in 1/24 time as compared with the conventional beam exposure apparatus having a single beam gun.

In the beam exposure apparatus 11 of this embodiment, a plurality of beam guns 13 project downward or obliquely downward from the substantially hemispherical base 12, but as shown in FIG. The beam gun 13 and the semiconductor chip 16 on the base body 12.
5B, the extremely thick beams 14 may be collectively emitted as shown in FIG. 5B.
The beam gun 13 may be pulled into the substrate 12 as shown in FIG.

Further, the shield 17 is only a single planetarium shape as shown in FIG. 1 and has a passage port 18, but it may be a flat shape as shown in FIG. 6A. 6
The shield 17 itself may have a deflecting / focusing function as shown in FIG. 6B, and the shield 17 may be arranged not only near the beam gun 13 but also immediately before the semiconductor wafer 15 as shown in FIG. 6C. Alternatively, a plurality of shields 17 may be used.

[0018]

In the beam exposure apparatus according to the present invention, a plurality of semiconductor chips or the like can be exposed at the same time, so that a semiconductor wafer or the like can be exposed in a short time.

[Brief description of drawings]

FIG. 1 is a side view of an embodiment of the present invention.

FIG. 2 is a front view of a plurality of beam guns according to an embodiment.

FIG. 3 is a front view of a shield according to an embodiment.

FIG. 4 is a side sectional view of a deflection device according to an embodiment.

FIG. 5 is a side view of a modified example of the beam gun.

FIG. 6 is a side sectional view of a modified example of the shield.

[Explanation of symbols]

 11 Beam Exposure Device 13 Beam Gun 14 Beam 17 Shield 18 Passage Port 21 Deflection Device

Claims (1)

[Claims] 1. A plurality of beam guns each emitting a beam, and a plurality of passage openings corresponding to the plurality of beam guns, and shielding the beam incident on a portion other than the plurality of passage openings. And a plurality of deflecting means corresponding to the plurality of passage openings for deflecting the beam passing through the plurality of passage openings.