JPH0590476A - Semiconductor device - Google Patents

Abstract

(57) [Abstract] [Purpose] The present invention makes it possible to easily mount a semiconductor integrated circuit chip that requires a high-definition and multi-pin lead frame by high integration and high definition, and also has excellent reliability. Another object of the present invention is to provide a semiconductor device. A semiconductor integrated circuit chip is fixed directly or indirectly to a plurality of leads of a lead frame, and terminals in the semiconductor integrated circuit chip and the leads have a predetermined correspondence and are electrically connected. In a semiconductor device that is electrically connected, the semiconductor integrated circuit chip is mounted on the island of the lead frame via a glass substrate having a relay lead made of a metal film formed by a vacuum deposition method. Semiconductor device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for mounting semiconductor integrated circuit chips such as IC and LSI.

[0002]

2. Description of the Related Art In a conventional semiconductor device, a semiconductor integrated circuit chip such as an IC or LSI is fixed to the center of a section of a lead frame, and the inner lead is connected to the semiconductor integrated circuit chip by wire bonding, and then a resin is used. The structure was sealed. A considerable proportion of the lead frame has an island suspended in the central portion of one unit by a support portion extending from the frame. At this time, the semiconductor integrated circuit chip is placed on the island. It is fixed to.

By the way, as semiconductor integrated circuit chips such as ICs and LSIs are becoming highly integrated and highly refined, the number of leads of a lead frame is increased and the lead pitch is narrowed in a conventional semiconductor device. As a result, mounting and electrical connection of the semiconductor integrated circuit chip have become increasingly difficult. In addition, Fe-Ni-based alloys and Fe-Ni-Co-based alloys, which are lead frame materials used for these,
Alternatively, in the case of a Cu-based alloy, the difference in coefficient of thermal expansion between the mounted semiconductor integrated circuit chip and the mounted semiconductor integrated circuit chip is extremely large, so that the stress generated during heat generation during use causes cracks or the like in the semiconductor integrated circuit chip. It has become very difficult to obtain a highly reliable semiconductor device.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and is compatible with a lead frame having a large number of pins and a high definition, and is easy to mount on a semiconductor integrated circuit chip and is free from cracks. It is an object to obtain a highly reliable semiconductor device without problems such as the above.

[0005]

Means provided by the present invention for solving the above-mentioned problems are that a semiconductor integrated circuit chip is directly or indirectly fixed to a plurality of leads of a lead frame, In a semiconductor device in which a terminal in the semiconductor integrated circuit chip and the lead are electrically connected in a predetermined correspondence relationship, the semiconductor integrated circuit chip has a relay lead made of a metal film formed by a vacuum deposition method. Another object of the present invention is to provide a semiconductor device which is mounted on an island of the lead frame via a glass substrate. At this time, the relay lead plays a role of a wiring circuit on the glass substrate, and the metal used may be a good conductor as long as the vacuum deposition method can be applied, and examples thereof include gold and copper. ..

[0006]

According to the present invention, when the semiconductor integrated circuit chip is mounted on the island of the lead frame, the semiconductor integrated circuit chip is mounted via the glass substrate having the relay lead made of the metal film by the vacuum deposition method. It is possible to form a high-definition pattern by a film (preferably a thin film) on the surface of the glass substrate, but if a metal that is a good conductor, such as gold or copper, is used as the material for this high-definition film pattern, the pattern Is insulated by the glass substrate, which is an insulator, and resin or ceramics, which is an insulator used for packaging, so that this pattern can be used as a wiring circuit.

Further, when a metal film formed by a vacuum vapor deposition method is used as the wiring circuit, it has a strong adhesion to the glass substrate and an excellent bonding property. Further, since the difference in the coefficient of thermal expansion between the glass substrate and the semiconductor integrated circuit chip is about the same, the semiconductor caused by the stress generated from the difference in expansion due to the heat generation during use, which is a problem in the conventional technique. It is extremely unlikely that a crack or the like will occur in the integrated circuit chip.

The present invention will now be described in more detail with reference to the drawings and examples, but the present invention is not limited thereto.

[0009]

EXAMPLE 1 Example 1 of the present invention is shown in FIG. Gold is deposited to a thickness of 1500 Å on the mounting surface of the glass substrate 5 by a vacuum deposition method. Next, a resist (negative resist made by Tokyo Ohka Kogyo Co., Ltd., trade name: PME
R) was applied, and a mask having a desired pattern was used for selective exposure and development, followed by etching to obtain relay leads 3 on the glass substrate 5. Next, after being cut into a desired size and shape, the IC chip 1 and the relay leads 3 on the glass substrate 5 are electrically connected using the gold bumps 2. Then, the conductive paste 8 (manufactured by Toyo Ink Mfg. Co., Ltd., trade name: Rexbond S-600) was die-bonded onto the island 7 of the lead frame 6.

Thereafter, the inner lead portion of the lead frame 6 and the relay lead 3 are electrically connected by wire bonding 4. Finally, the semiconductor integrated circuit chip was mounted by molding this with the sealing resin 9. As a result, it is possible to obtain a semiconductor device which has high pin count, is highly resistant to cracks, and has high reliability.

The step of cutting the glass substrate 5 into a desired size and shape in this embodiment is performed after the relay leads 3 and the IC chip 1 on the mounting surface are electrically connected by the gold bumps 2. It is also possible to carry out. Further, the vapor deposition film to be the relay lead 3 on the glass substrate 5 is not limited to gold as described above, but copper or other metal can be used.

<Second Embodiment> The glass substrate 5 of the first embodiment.
By providing a mask of a desired pattern on the film formation surface of the glass substrate 5 when forming a gold film on the upper surface by a vacuum vapor deposition method, a gold thin film can be formed without the above process (so-called photolithography). A semiconductor device similar to that of Example 1 could be provided by immediately obtaining the relay lead 3 made of a patterned gold thin film.

[0013]

As described above, according to the present invention,
A semiconductor integrated circuit chip is mounted on the island of the lead frame via a glass substrate having a relay lead made of a metal vapor deposition film. Therefore, the relay lead can have a high-definition pattern. In addition, it has excellent bonding strength, and because it is possible to control the position during bonding while observing from the back side of the glass substrate, it is particularly suitable for bonding with bumps, and it is compatible with semiconductor devices with high integration and high definition. It's easy. Furthermore, since this glass substrate has the same coefficient of thermal expansion as that of the semiconductor integrated circuit chip, the generation of extra stress due to heat generation during use is greatly mitigated compared to the conventional case, and cracks in the semiconductor integrated circuit chip occur. It is possible to very effectively prevent the above, and it was possible to easily obtain a semiconductor device having dramatically improved reliability in these aspects.

[0014]

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

[Explanation of symbols]

 1 ... IC chip 2 ... Gold bump 3 ... Relay lead 4 ... Wire bonding 5 ... Glass substrate 6 ... Lead frame 7 ... Island 8 ... Conductive paste 9. ..Sealing resin

Claims (1)

[Claims] 1. A semiconductor integrated circuit chip is directly or indirectly fixed to a plurality of leads of a lead frame,
In a semiconductor device in which terminals in the semiconductor integrated circuit chip and the leads are electrically connected in a predetermined correspondence relationship, the semiconductor integrated circuit chip has a relay lead made of a metal film formed by a vacuum deposition method. Through the glass substrate,
A semiconductor device mounted on an island of the lead frame.