JPH0613331A - Vapor phase epitaxy apparatus - Google Patents

Abstract

PURPOSE:To provide a vapor phase epitaxy apparatus in which vapor reaction of material gases is suppressed and which simultaneously has high safety. CONSTITUTION:A plurality of tubes 12 for transporting materials are connected to a flange 14 connected to a reaction tube 13. A plurality of gas passages are provided at the flange 14 so as not to mix material gases. A plurality of introducing tubes 15 are connected to material gas outlets of the flange 14 in the tube 13 so as to be hermetically sealed. The tubes 15 are disposed immediately before an upstream side of a substrate to transport the materials.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus for growing a growth layer of a semiconductor or a compound on a substrate.

[0002]

2. Description of the Related Art A vapor phase growth apparatus is widely used for growing a semiconductor or oxide superconducting thin film on a substrate.
Among them, the metal organic chemical vapor deposition method suitable for growing a compound semiconductor is widely used, and many compounds are grown. As a conventional vapor phase growth apparatus, for example, the Journal of Cryst
al Growth) Vol. 69, 1984, pp. 10-14. FIG. 3 is a schematic configuration diagram of an example of a conventional vapor phase growth apparatus. A plurality of types of growth gas supplied from the gas flow rate control device 21 are independently transported by the plurality of pipes 22 and connected to the reaction pipe 23. The connecting portion between the pipe 22 and the reaction pipe 23 is generally one in which the pipe is directly connected to the reaction pipe using an O-ring and one in which the pipe is connected to a flange fixed to the upstream portion of the reaction pipe. is there. A substrate 25 placed on the susceptor 24 is arranged in the reaction tube 23, and a high frequency coil 26 for heating the substrate is arranged around the reaction tube 23.

[0003]

When growing a compound semiconductor, for example, InP, there are many reports that trimethylindium ((CH ₃ ) ₃ In: TMIn) and phosphine (PH ₃ ) are used as growth raw materials. There is. Also, Z
When nSe is grown, dimethyl zinc ((CH ₃ ) ₂ Zn: DMZn) and hydrogen selenide (H) are used as growth raw materials.
_A method using ₂ Se) is known. However, it is known that when the conventional vapor phase growth apparatus is used to grow these raw materials, the raw materials react with each other in the vapor phase to inhibit crystal growth. That is, when the gas phase reaction occurs, the raw material is consumed before reaching the substrate, and at the same time, the reaction tube becomes dirty. Further, there is a problem that the reaction product adheres to the substrate and the quality of the grown film deteriorates. In recent years, the PH ₃ / TMIn raw material ratio was set to 150 during InP growth.
By the above, it is known that good-quality InP grows, but the gas-phase reaction was not removed, and a new problem of consuming a large amount of toxic PH ₃ occurred. Also, for ZnSe growth, H ₂ S
Dimethyl selenium ((CH ₃ ) ₂ Se: DMS instead of e
Although it has been found that the gas phase reaction is removed by using e), there is a problem that the growth temperature becomes high because the thermal decomposition temperature of the raw material is high.

On the other hand, as a method of heating the substrate, there is a method of using an electric furnace installed outside the reaction tube. In the conventional growth apparatus, the raw material is thermally decomposed in the upstream portion of the substrate due to heat radiation of the electric furnace, and at the same time, There is a problem in that the reaction reacts and adheres to the inner wall of the reaction tube to hinder the growth. Further, in the conventional growth apparatus, there is an apparatus in which a pipe and a reaction tube are directly connected, but the shape of the reaction tube becomes complicated and the reaction tube may be damaged at the connecting portion. This is particularly dangerous when growing using a highly toxic raw material, and there is a safety problem. The present invention solves such conventional problems and is safe and
Moreover, it is an object of the present invention to provide a vapor phase growth apparatus that can use any raw material without inhibiting growth.

[0005]

In order to achieve the above object, the present invention provides a reaction tube for removably accommodating a substrate or a substrate supported on a susceptor, and a plurality of types of reaction tubes in the reaction tube. In a vapor phase growth apparatus comprising a gas flow rate control device arranged to supply a growth source gas and a heating device arranged on the outer peripheral side of the reaction tube to heat the substrate, the gas flow rate control device side of the reaction tube A plurality of pipes for independently circulating a plurality of kinds of gases in the reaction pipe between the flange provided on the gas flow control device and the gas flow control device are installed while maintaining airtightness, and the reaction pipes of the respective pipes are installed. Phase growth apparatus in which the base end side of the introduction pipe is independently connected to the gas outlet on the side in an airtight state, and the tip end side of the introduction pipe is extended toward the substrate side to the vicinity of the substrate. It is what constitutes.

[0006]

The vapor phase growth apparatus of the present invention has a structure in which the respective source gases flow without mixing in the pipe, the flow path in the flange and the introducing pipe, and the raw material gas does not cause a gas phase reaction. Are transported to the substrate. Further, the flange is connected or fixed to the reaction tube, and the pipe is connected to this flange. Therefore, even if there are a plurality of pipes, it is not necessary to complicate the shape of the reaction tube, the connection is easy, and there is no fear of damaging the reaction tube.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of the vapor phase growth apparatus of this embodiment. The gas flow rate control device 11 is connected to a plurality of pipes 12 that can transport a plurality of growth source gases, respectively. Piping 1
2 is a flange 1 connected and fixed to the upstream end of the reaction tube 13.
4 gas inlets. Therefore, plural kinds of raw material gases are transported into the flange 14 through the independent pipes 12, respectively. The introduction pipes 15 are connected to the gas outlets of the flanges in the reaction pipes 13, respectively. In the present embodiment, the connection between the gas outlet of the flange 14 and the introduction pipe 15 is
In order to ensure airtightness, both connecting parts are threaded, and the introduction pipe with thin Teflon tape wrapped around the screw part is tightened to the screw part of the gas outlet of the flange. The introduction pipe 15 is arranged such that its tip end side extends toward the substrate 17 side. Further, a high-frequency coil 18 is provided as a substrate heating device near the substrate outside the reaction tube.

Next, an example of vapor phase growth using the above vapor phase growth apparatus will be described. Using this vapor phase growth apparatus, TMI
Attempts were made to grow InP using n and PH ₃ . Susceptor 1
The substrate 17 placed on No. 6 was heated by induction heating of the high frequency coil 18. It was found that the vapor phase reaction did not occur under any growth condition without the upstream part of the substrate being contaminated. Further, even if the PH ₃ / TMIn raw material ratio is 10 or less, a good quality crystalline InP film was obtained, and the effect of the present invention was confirmed. FIG. 2 shows a substrate 17 of the vapor phase growth apparatus shown in FIG.
3 is a schematic configuration diagram of a vapor phase growth apparatus when the heating apparatus of FIG. Using this vapor phase growth apparatus,
We tried to grow GaAs. Diethyl gallium chloride ((C ₂ H ₅ ) ₂ GaCl) and arsine (AsH ₃ ) were used as raw materials. Under any growth conditions
The upstream portion of the substrate was not contaminated and no growth inhibition occurred. The obtained film was also excellent in crystallinity.

Although the vapor phase growth apparatus having three introduction tubes is used in the above embodiment, it is obvious that the present invention is not limited to this, and any number of tubes may be used. Further, although the screw structure is used as the connecting means between the pipe and the introducing pipe in the above-mentioned embodiment, the present invention is not limited to this, and any means may be used as long as airtightness is maintained. In the above embodiments, induction heating using a high frequency coil and thermal radiation heating using an electric furnace were used as the heating means for the substrate, but it is clear that the present invention is not limited to these. Further, in the above embodiment, InP and Ga are used.
Although the growth of As was tried and the raw materials as shown above were used, the present invention is not limited to these, and other III-V group compound semiconductors, II-VI group compound semiconductors and oxide superconductors,
Alternatively, it is possible to grow them sequentially, and any growth raw material may be used.

[0010]

As described above, according to the present invention,
Even in the case of using a growth raw material that causes a gas phase reaction between raw materials, it is possible to transport them to the substrate without causing a gas phase reaction. Therefore, a good quality growth layer can be obtained without inhibiting growth in any combination of raw materials. In addition, the structure ensures that the reaction tube is not damaged, thus ensuring safety.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a vapor phase growth apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a vapor phase growth apparatus according to another embodiment of the present invention.

FIG. 3 is a schematic configuration diagram of an example of a conventional vapor phase growth apparatus.

[Explanation of symbols]

 11 Gas Flow Control Device 12 Piping 13 Reaction Pipe 14 Flange 15 Inlet Pipe 16 Susceptor 17 Substrate 18 High Frequency Coil 19 Electric Furnace 21 Gas Flow Control Device 22 Piping 23 Reaction Pipe 24 Susceptor 25 Substrate 26 High Frequency Coil

Claims (1)

[Claims] 1. A reaction tube for removably accommodating a substrate or a substrate supported on a susceptor, a gas flow rate control device arranged to supply a plurality of kinds of growth raw material gas into the reaction tube, In a vapor phase growth apparatus provided with a heating device arranged on the outer peripheral side of a reaction tube to heat the substrate, a plurality of types are provided between a flange provided on the gas flow control device side of the reaction tube and the gas flow control device. A plurality of pipes that independently circulate the gas in the reaction tube are erected while maintaining airtightness, and the base end side of the introduction pipe is independently airtightly connected to the gas outlet on the reaction tube side of each pipe. Connected to
A vapor phase growth apparatus, wherein the tip end side of the introduction tube is extended toward the substrate side and arranged near the substrate.