JPH0615988B2 - Method for manufacturing multi-element infrared detector - Google Patents
Method for manufacturing multi-element infrared detectorInfo
- Publication number
- JPH0615988B2 JPH0615988B2 JP4592985A JP4592985A JPH0615988B2 JP H0615988 B2 JPH0615988 B2 JP H0615988B2 JP 4592985 A JP4592985 A JP 4592985A JP 4592985 A JP4592985 A JP 4592985A JP H0615988 B2 JPH0615988 B2 JP H0615988B2
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- infrared rays
- cold shield
- infrared detector
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title claims description 3
- 238000001514 detection method Methods 0.000 claims description 17
- 239000006096 absorbing agent Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 4
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は多素子形赤外線検出器及びその製造方法に関す
る。The present invention relates to a multi-element infrared detector and a manufacturing method thereof.
（従来技術とその問題点） 駅外線検出素子では信号赤外線以外の不要な赤外線が多
い程、その見かけ上の比検出能，すなわち検出感度が低
下する。このため、単素子形の赤外線検出器では通常は
円形開口のいわゆるコールドシールドを設け、赤外線の
入射角を制限して不要の赤外線の入射を防いでいる。多
素子形の赤外線検出器の場合にもこうしたコールドシー
ルドが必要であるが、これを単素子形と同様に単一の開
口によって設定した場合には、中央部に配列された素子
と周辺部の素子とでこの開口を見込む立体角が異なるた
め、それぞれの検出感度が大きく異なり、特に中央部の
素子で特性が低減する。このため多素子形赤外線検出器
として、従来第４図に示すように、個々の素子に対応さ
せて開口窓を設けたコールドシールドを用いたものが知
られている（特開昭57-142526）。すなわち多素子形赤
外線検出デバイス３２の各素子３５に入射する赤外線は
コールドシールド３１の対応した開口部３４によって、
どの素子についても立体各θiになっており、従って中
央部の素子３５ａから周辺部の素子３５ｂまでの比検出
能すなわち検出感度の分布がかなり均一となり、中央部
の素子３５ａでも特性低減はかなり防止できる。しか
し、実際にはこの構造でも検出感度の不均一性及び特性
低減が生ずることは第３図からも明らかである。すなわ
ち、赤外線は各素子へ直上の対応する開口部３４からの
みでなく隣接する開口部３６からも入射するため、中央
部の素子と周辺部の素子とで開口を見込む立体角は実質
的に異なり、単一の開口のコールドシールドによるもの
よりは軽減されるものの、検出感度の不均一性と特性低
減の問題を根本的に解決することはできなかった。(Prior art and its problems) In the station line detection element, the more unnecessary infrared rays other than the signal infrared rays, the lower the apparent specific detectability, that is, the detection sensitivity. For this reason, a single element type infrared detector is usually provided with a so-called cold shield having a circular opening to limit the incident angle of infrared rays to prevent unnecessary infrared rays from entering. Such a cold shield is also necessary in the case of a multi-element type infrared detector, but when it is set by a single aperture like the single element type, the elements arranged in the central part and the peripheral part are arranged. Since the solid angle that sees this opening differs depending on the element, the respective detection sensitivities greatly differ, and the characteristics are reduced especially in the central element. For this reason, as a multi-element type infrared detector, there is known a conventional one using a cold shield having an opening window corresponding to each element as shown in FIG. 4 (Japanese Patent Laid-Open No. 57-142526). . That is, the infrared rays incident on each element 35 of the multi-element type infrared detection device 32 are caused by the corresponding openings 34 of the cold shield 31.
Each element has three-dimensional θ i , and therefore the distribution of the specific detectability, that is, the detection sensitivity, from the central element 35a to the peripheral element 35b becomes fairly uniform, and the characteristic reduction of the central element 35a is also considerable. It can be prevented. However, it is clear from FIG. 3 that in reality, even with this structure, nonuniformity in detection sensitivity and reduction in characteristics occur. That is, since infrared rays are incident on each element not only from the corresponding opening 34 immediately above but also from the adjacent opening 36, the solid angle at which the element in the central portion and the element in the peripheral portion see the opening is substantially different. Although it is less than the single aperture cold shield, the problems of non-uniformity of detection sensitivity and characteristic reduction could not be fundamentally solved.
（発明の目的） 本発明の目的は上記の問題を解決し、多素子形赤外線検
出器の各素子へ入射する赤外線の光量を均一にすること
で検出感度を均一にでき、特性低減を生じない多素子形
赤外線検出器の製造方法を提供することにある。(Object of the Invention) The object of the present invention is to solve the above problems and to make the detection sensitivity uniform by making the amount of infrared light incident on each element of the multi-element infrared detector uniform, without causing a reduction in characteristics. It is to provide a method for manufacturing a multi-element infrared detector.
（発明の構成） 本発明の多素子形赤外線検出器の製造方法は、検出しよ
うとする波長域の赤外線を透過する材料から成る基板上
に、該赤外線を吸収する材料から成る層を形成した後、
これらを複数枚重ねて接着してから厚さ方向の板状に形
成してコールドシールドを作成し、一方の面上に複数の
赤外線検出素子を配列し容器の底面に他方の面を向けて
赤外線検出デバイスを固定し、前記一の面と所定の間隔
を保って前記容器に前記コールドシールドを、前記層が
前記赤外線検出素子の各々に対応してつい立て状の赤外
線吸収体となり、前記赤外線検出素子の一つに入射する
赤外線が隣接する前記赤外線検出素子に実質的に入謝し
ないように固定することを特徴とする。(Structure of the Invention) A method of manufacturing a multi-element infrared detector according to the present invention comprises: forming a layer made of a material that absorbs infrared rays on a substrate made of a material that transmits infrared rays in a wavelength range to be detected. ,
A plurality of these are stacked and bonded together, then formed into a plate shape in the thickness direction to create a cold shield, and multiple infrared detection elements are arranged on one side and the other side is directed to the bottom of the container and the infrared rays are placed. The detection device is fixed, the cold shield is provided in the container while keeping a predetermined distance from the one surface, and the layer serves as a vertical infrared absorber corresponding to each of the infrared detection elements, and the infrared detection is performed. It is characterized in that infrared rays incident on one of the elements are fixed so that they do not substantially enter the adjacent infrared detecting element.
（実施例） 次に、本発明の実施例について図面を用いて説明する。(Example) Next, the Example of this invention is described using drawing.
第１図は本発明の一実施例を説明するためその一部を工
程順に示した斜視図である。まず、第１図(a)に示すよ
うに、赤外線が透過する材料から成る基板２１上に赤外
線を吸収する材料から成る層２２を形成する。この基板
２１としては検出しようとする赤外線を透過させるもの
であればよく、SiやGe,ZnS,ZnSe等が適している。ま
た、赤外線を吸収する材料の層２２としてはSiO2やAl2O
3、ガラス等を用いることができ、スパッタリングや蒸
着により成膜することができる。この時その膜厚taがコ
ールドシールドについ立て状吸収体の厚さとなり、ま
た、このtaと基板２１の厚さtsとの和がつい立て状吸収
体の配列のピッチLwとなる。次に第１図(b)に示すよう
に層２２が形成された基板２１を複数枚、すなわち多素
子形赤外線検出デバイスの素子数よりも多く用意し、こ
れを接着して積層ブロックを形成する。続いてこれを第
１図(c)に示すように厚さ方向、すなわち基板２１の面
に垂直な方向の板状に切断し、所定の厚さtcに加工を行
なうことにより、つい立て状吸収体が配列された一次元
多素子形赤外線検出器用コールドシールドの製造が完了
する。FIG. 1 is a perspective view showing a part of it in order of steps for explaining an embodiment of the present invention. First, as shown in FIG. 1A, a layer 22 made of a material absorbing infrared rays is formed on a substrate 21 made of a material transmitting infrared rays. The substrate 21 may be any one that transmits infrared rays to be detected, and Si, Ge, ZnS, ZnSe or the like is suitable. Further, as the layer 22 made of a material that absorbs infrared rays, SiO 2 or Al 2 O is used.
3 , glass or the like can be used, and a film can be formed by sputtering or vapor deposition. In this case the thickness t a is the thickness of about upright shaped absorber coldshield, also the pitch L w of the array of sum evictions shaped absorber and the thickness t s of the t a and the substrate 21 . Next, as shown in FIG. 1 (b), a plurality of substrates 21 on which the layer 22 is formed, that is, more than the number of elements of the multi-element infrared detection device, are prepared and bonded to form a laminated block. . Subsequently, as shown in FIG. 1 (c), this is cut into a plate shape in the thickness direction, that is, in the direction perpendicular to the surface of the substrate 21, and processed into a predetermined thickness t c , thereby forming a vertical shape. Manufacture of a cold shield for a one-dimensional multi-element infrared detector in which absorbers are arranged is completed.
次に、これを用いた多素子形赤外線検出器の例を第２図
に示す。コールドシールド１は多素子形赤外線検出デバ
イス２の複数の素子６の各々に対応して設けられた、赤
外線を吸収するつい立て状吸収体４の配列から成り、赤
外線を透過させる材料から成る開口部５と共に一体化さ
れたものである。また容器３は多素子形赤外線検出デバ
イス２を納まると共に、コールドシールド１を所定の位
置に保持、固定するものである。Next, an example of a multi-element type infrared detector using this is shown in FIG. The cold shield 1 is composed of an array of vertical absorbers 4 for absorbing infrared rays, which are provided corresponding to each of the plurality of elements 6 of the multi-element infrared detecting device 2, and are made of a material that transmits infrared rays. It is integrated with 5. The container 3 accommodates the multi-element infrared detecting device 2 and holds and fixes the cold shield 1 at a predetermined position.
この構成により、素子６への赤外線入射角は隣接の素子
との中間に設けられた直近のつい立て状吸収体により、
制限され、各素子への赤外線入射量は均一になる。例え
ば代表的なものとして素子６の大きさＷ＝５０μｍ、間
隔ｇ＝５０μｍの多素子形赤外線検出器で開口角θ＝２
０゜とする場合、厚さｔa ＝１０μｍのつい立て状吸収
体をピッチＬw ＝１００μｍとして、上端１１を１１３
μｍ、下端１０を２８μｍの高さに、いいかえれば、厚
さｔc ＝８５μｍのコールドシールドを素子の面から間
隔Ｓ＝２８μｍとなるように設置すればよく、これらの
値を適切に設定することにより任意の開口角θの設定が
可能である。With this configuration, the incident angle of infrared rays on the element 6 is determined by the latest vertical absorber provided in the middle of the adjacent element,
The amount of infrared rays incident on each element is limited and becomes uniform. For example, as a typical example, a multi-element type infrared detector in which the size W of the element 6 is 50 μm and the interval g is 50 μm is an aperture angle θ = 2.
In the case of 0 °, the vertical absorber having a thickness ta = 10 μm is set at a pitch L w = 100 μm and the upper end 11 is set to 113.
μm, the lower end 10 is 28 μm high, in other words, a cold shield having a thickness t c = 85 μm may be installed so that the distance S = 28 μm from the surface of the element, and these values should be set appropriately. Can be used to set an arbitrary opening angle θ.
尚、この一次元配列の直交方向の開口角については簡単
には容器で制限すればよいが、このコールドシールドで
同時に設定しようとする場合には、板状のコールドシー
ルドの幅twを所定の大きさ、例えば１００μｍの程度に
し、その両側面２３にも赤外線を吸収する層を形成すれ
ばよい。その後、容器３に、多素子形赤外線検出デバイ
ス２を納めると共に、コールドシールド１を所定の位置
に保持、固定する。The opening angle in the orthogonal direction of this one-dimensional array may be simply limited by the container. However, when simultaneously setting the cold shield, the width t w of the plate-shaped cold shield is set to a predetermined value. The size may be, for example, about 100 μm, and a layer that absorbs infrared rays may be formed on both side surfaces 23 thereof. Then, the multi-element infrared detecting device 2 is placed in the container 3, and the cold shield 1 is held and fixed at a predetermined position.
（発明の効果） 以上詳細に説明したように、本発明によれば、各素子へ
入射する赤外線の光量を等しくすることで検出感度の均
一性がよく特性低減のない多素子形赤外線検出器を得る
ことができる。(Effects of the Invention) As described in detail above, according to the present invention, a multi-element infrared detector having good detection sensitivity uniformity and no characteristic reduction by making the amount of infrared light incident on each element equal. Obtainable.
第１図は本発明の多素子形赤外線検出器の一実施例を説
明するためその一部を工程順に示した斜視図、第２図は
第１図の実施例により製造された多素子形赤外線検出器
を例示する断面図、第３図は従来の多素子形赤外線検出
器を示す断面図である。 １……コールドシールド、２，３２……多素子形赤外線
検出デバイス、３，３３……容器、４……つい立て状吸
収体、５，３４……開口部、６，３５……素子、６ａ，
３５ａ……中央部の素子、６ｂ，３５ｂ……周辺部の素
子、７，３６……隣接の開口部からの赤外線、８，３７
……隣接する開口部、９……隣接する素子、１０……つ
い立て状吸収体の下端、１１……つい立て状吸収体の上
端、２１……赤外線が透過する基板、２２……赤外線を
吸収する層、３１……従来のコールドシールド。FIG. 1 is a perspective view showing a part of the multi-element infrared detector of the present invention in order of steps for explaining the embodiment, and FIG. 2 is a multi-element infrared detector manufactured by the embodiment of FIG. FIG. 3 is a cross-sectional view illustrating a detector, and FIG. 3 is a cross-sectional view showing a conventional multi-element infrared detector. 1 ... Cold shield, 2, 32 ... Multi-element type infrared detection device, 3, 33 ... Container, 4 ... Vertical absorber, 5, 34 ... Opening part, 6, 35 ... Element, 6a ，
35a ... central element, 6b, 35b ... peripheral element, 7, 36 ... infrared rays from adjacent openings, 8, 37
...... Adjacent openings, 9 ... Adjacent elements, 10 ... Bottom edge of vertical absorber, 11 ... Top edge of vertical absorber, 21 ... Substrate through which infrared rays pass, 22 ... Infrared rays Absorbing layer, 31 ... Conventional cold shield.
Claims (1)
る材料から成る基板上に、該赤外線を吸収する材料から
成る層を形成した後、これらを複数枚重ねて接着してか
ら厚さ方向の板状に形成してコールドシールドを作成
し、一方の面上に複数の赤外線検出素子を配列し容器の
底面に他方の面を向けて赤外線検出デバイスを固定し、
前記一方の面と所定の間隔を保って前記容器に前記コー
ルドシールドを、前記層が前記赤外線検出素子の各々に
対応してつい立て状の赤外線吸収体となり、前記赤外線
検出素子の一つに入射する赤外線が隣接する前記赤外線
検出素子に実質的に入射しないように固定することを特
徴とする多素子形赤外線検出器の製造方法。1. A layer made of a material that absorbs infrared rays is formed on a substrate made of a material that transmits infrared rays in a wavelength range to be detected, and then a plurality of these layers are stacked and adhered to each other in the thickness direction. Create a cold shield by forming it into a plate shape, arrange a plurality of infrared detection elements on one side, and fix the infrared detection device with the other side facing the bottom of the container,
The cold shield is kept in the container while keeping a predetermined distance from the one surface, and the layer becomes a vertical infrared absorber corresponding to each of the infrared detecting elements, and is incident on one of the infrared detecting elements. A method for manufacturing a multi-element infrared detector, characterized in that the infrared rays are fixed so that they do not substantially enter the adjacent infrared detecting elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4592985A JPH0615988B2 (en) | 1985-03-08 | 1985-03-08 | Method for manufacturing multi-element infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4592985A JPH0615988B2 (en) | 1985-03-08 | 1985-03-08 | Method for manufacturing multi-element infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61205827A JPS61205827A (en) | 1986-09-12 |
| JPH0615988B2 true JPH0615988B2 (en) | 1994-03-02 |
Family
ID=12732948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4592985A Expired - Fee Related JPH0615988B2 (en) | 1985-03-08 | 1985-03-08 | Method for manufacturing multi-element infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0615988B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2794527B1 (en) | 1999-06-04 | 2001-09-21 | Thomson Csf | THERMAL DETECTOR WITH A BOUNDARY VIEW ANGLE |
| JP5663900B2 (en) | 2010-03-05 | 2015-02-04 | セイコーエプソン株式会社 | Spectroscopic sensor device and electronic device |
| JP5862025B2 (en) * | 2011-03-16 | 2016-02-16 | セイコーエプソン株式会社 | Optical sensor and electronic equipment |
| JP6015034B2 (en) * | 2012-03-07 | 2016-10-26 | セイコーエプソン株式会社 | Optical sensor and electronic equipment |
-
1985
- 1985-03-08 JP JP4592985A patent/JPH0615988B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61205827A (en) | 1986-09-12 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |