JPH0620972A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPH0620972A JPH0620972A JP20063292A JP20063292A JPH0620972A JP H0620972 A JPH0620972 A JP H0620972A JP 20063292 A JP20063292 A JP 20063292A JP 20063292 A JP20063292 A JP 20063292A JP H0620972 A JPH0620972 A JP H0620972A
- Authority
- JP
- Japan
- Prior art keywords
- cvd
- ion source
- vacuum pump
- product
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＣＶＤ装置に係り、特に
ＣＶＤ反応管内の気相反応で生成される副生成物をイオ
ン源から放射されるイオンにより荷電し、電気的に副生
成物を除去することができるＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus, and in particular, a by-product produced by a gas phase reaction in a CVD reaction tube is electrically charged by ions emitted from an ion source to electrically remove the by-product. The present invention relates to a CVD apparatus that can be used.
【０００２】[0002]
【従来の技術】ＣＶＤ装置を使用して成膜を行ったり、
微粒子を造る場合、主生成物以外に副生成物ができる場
合がある。主生成物は基板上に薄膜を形成したり、微粒
子として取り出されて使用される。しかし、副生成物は
排気系の中に流れ、冷やされ固体粒子となって真空ポン
プの中に入り込み、ケーシングや回転翼に付着し真空ポ
ンプの故障や寿命低下の原因となっていた。2. Description of the Related Art A CVD apparatus is used to form a film,
When producing fine particles, by-products may be formed in addition to the main product. The main product is used by forming a thin film on the substrate or extracting as a fine particle. However, the by-product flows into the exhaust system, is cooled, becomes solid particles, enters the vacuum pump, and adheres to the casing and the rotor blades, causing a failure and a shortened life of the vacuum pump.
【０００３】[0003]
【発明が解決しようとする課題】従来、副生成物が真空
ポンプの中に入り込むことを防止するために、ガストラ
ップを設け、排気ガスを強制的に冷却し管壁に付着さ
せ、副生成物を取り除く方法が取られているが、効果的
ではない。また、真空ポンプ内ではケーシングや回転翼
に副生成物が付着しないようシースエアとして多量の清
浄窒素ガスを流しているが、これも十分効果があるとは
言えない。Conventionally, in order to prevent a by-product from entering a vacuum pump, a gas trap is provided, and exhaust gas is forcibly cooled and adhered to a pipe wall. Has been taken, but it is not effective. In the vacuum pump, a large amount of clean nitrogen gas is made to flow as sheath air so as to prevent by-products from adhering to the casing and the rotary blades, but this cannot be said to be sufficiently effective.
【０００４】本発明は上述の事情に鑑みなされたもの
で、その目的とする処は、効果的に副生成物を取り除
き、真空ポンプの故障や寿命低下を防ぐことができるＣ
ＶＤ装置を提供することにある。The present invention has been made in view of the above-mentioned circumstances, and a purpose thereof is to effectively remove a by-product and prevent a failure or a reduction in life of a vacuum pump.
It is to provide a VD device.
【０００５】[0005]
【課題を解決するための手段】上述した目的を達成する
ため、本発明のＣＶＤ装置は、真空源に連通されたＣＶ
Ｄ反応管を備え減圧下で使用されるＣＶＤ装置におい
て、前記ＣＶＤ反応管と真空源との間に、ＣＶＤ反応管
の中で生成される副生成物を正又は負に荷電するイオン
源と、該イオン源によってイオン化された副生成物を電
気的に捕集するための電気的捕集部とを設けたことを特
徴とするものである。In order to achieve the above-mentioned object, the CVD apparatus of the present invention comprises a CV connected to a vacuum source.
In a CVD apparatus equipped with a D reaction tube and used under reduced pressure, an ion source for positively or negatively charging a by-product generated in the CVD reaction tube, between the CVD reaction tube and a vacuum source, An electrical collector for electrically collecting the by-product ionized by the ion source is provided.
【０００６】[0006]
【作用】前述した構成からなる本発明によれば、ＣＶＤ
反応管で生成された副生成物はイオン源を通過する間に
正又は負に荷電される。そして、イオン源によってイオ
ン化された副生成物は電場が形成された電気的捕集部に
おいて捕集される。したがって、副生成物を真空ポンプ
に入る前に効果的に除去することができ、真空ポンプの
故障や寿命低下を防止することができる。According to the present invention having the above-described structure, the CVD
Byproducts produced in the reaction tube are positively or negatively charged while passing through the ion source. Then, the by-products ionized by the ion source are collected in the electrical collector in which the electric field is formed. Therefore, the by-product can be effectively removed before entering the vacuum pump, and the vacuum pump can be prevented from malfunctioning or from shortening its life.
【０００７】[0007]
【実施例】以下、本発明に係るＣＶＤ装置の一実施例を
図１及び図２を参照して説明する。本発明に係るＣＶＤ
装置においては、図１に示されるように、ＣＶＤ反応管
１と排気系の真空ポンプ２との間にイオン源３と、電気
的捕集部５とが設置されている。前記イオン源３には、
アメリシウム（ 241Ａｍ）、クリプトン（85Ｋｒ）、ポ
ロニウム（ 210Ｐｏ）等の様なエネルギーの低い放射性
物質４が使用されている。これらの放射性物質４はエア
ロゾルを荷電させたり、中和するのに広く使われてお
り、危険度は低い。イオン源３を通過する副生成物はイ
オンにより正又は負に荷電される。また、電気的捕集部
５には、複数の平板状の電極６が配設されており、これ
ら複数の電極６は直流電源７に接続されている。したが
って、対向する電極６，６間には電場が形成されてお
り、イオン源３で荷電された副生成物は電気的捕集部５
によって捕集される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the CVD apparatus according to the present invention will be described below with reference to FIGS. CVD according to the present invention
In the apparatus, as shown in FIG. 1, an ion source 3 and an electrical collector 5 are installed between a CVD reaction tube 1 and an exhaust system vacuum pump 2. The ion source 3 includes
A low energy radioactive substance 4 such as americium ( 241 Am), krypton ( 85 Kr), polonium ( 210 Po) is used. These radioactive substances 4 are widely used for charging and neutralizing the aerosol, and the risk is low. By-products passing through the ion source 3 are positively or negatively charged by the ions. In addition, a plurality of flat plate-shaped electrodes 6 are arranged in the electrical collector 5, and the plurality of electrodes 6 are connected to a DC power supply 7. Therefore, an electric field is formed between the electrodes 6 and 6 facing each other, and the by-products charged in the ion source 3 are electrically collected by the electric collector 5.
To be collected by.
【０００８】次に、前述のように構成されたＣＶＤ装置
の作用を図２を参照して説明する。この作用の説明にお
いては、ジクロールシランガス（ＳｉＨ2Ｃｌ2）とアン
モニアガス（ＮＨ3 ）を使用してシリコンナイトライド
（Ｓｉ3Ｎ4）を成膜する例を用いて説明する。Next, the operation of the CVD apparatus configured as described above will be described with reference to FIG. In the description of this action, an example of forming a film of silicon nitride (Si 3 N 4 ) using dichlorosilane gas (SiH 2 Cl 2 ) and ammonia gas (NH 3 ) will be described.
【０００９】半導体の絶縁膜に用いられるシリコンナイ
トライドを成膜する時、ジクロールシランガスとアンモ
ニアガスを使用して行う場合がしばしばある。この反応
は下記のように表される。 ３ＳｉＨ2Ｃｌ2＋１０ＮＨ3 → Ｓｉ3Ｎ4＋６ＮＨ4Ｃｌ＋６Ｈ2 この時、副生成物、塩化アンモニウム（ＮＨ4 Ｃｌ）が
生成する。塩化アンモニウムは１８４℃で気体から固体
となる。１８４℃より高温にあるＣＶＤ反応管（約７０
０〜９５０℃）の中ではガス状であり、排気系の中に流
れでて冷却され数ｎｍ〜数μｍ程度の粒子となる。生成
された粒子は一部配管に付着し、その多くは真空ポンプ
の中に入り込み、ケーシングや回転翼に付着して摩擦や
かじり等の故障の原因となり、真空ポンプの寿命を低下
させる。Dichlorosilane gas and ammonia gas are often used when forming a silicon nitride film used for an insulating film of a semiconductor. This reaction is represented as follows: 3SiH 2 Cl 2 + 10NH 3 → Si 3 N 4 + 6NH 4 Cl + 6H 2 At this time, a by-product, ammonium chloride (NH 4 Cl), is produced. Ammonium chloride changes from a gas to a solid at 184 ° C. CVD reaction tubes (about 70
(0 to 950 ° C.), it is gaseous, and flows into the exhaust system to be cooled to form particles of several nm to several μm. The produced particles partially adhere to the pipe, and most of them enter the vacuum pump and adhere to the casing and the rotating blades, causing troubles such as friction and galling, which shortens the life of the vacuum pump.
【００１０】そこで、本実施例においては、図１に示さ
れるようにＣＶＤ反応管１と真空ポンプ２の間にイオン
源３と電気的捕集部５を設け、これらイオン源３及び電
気的捕集部５を冷却され固体となった副生成物である塩
化アンモニウムを含む排気ガスが通過するようにする。
イオン源３を通過する副生成物は、図２に示されるよう
にイオンにより正又は負に荷電され、電場を形成した電
気的捕集部５において捕集される。Therefore, in this embodiment, as shown in FIG. 1, an ion source 3 and an electrical collector 5 are provided between the CVD reaction tube 1 and the vacuum pump 2, and the ion source 3 and the electrical collector 5 are provided. Exhaust gas containing ammonium chloride, which is a by-product that has been cooled and solidified, is allowed to pass through the collecting portion 5.
The by-product passing through the ion source 3 is positively or negatively charged by the ions as shown in FIG. 2, and is collected in the electrical collector 5 that forms an electric field.
【００１１】本実施例においては、塩化アンモニウムの
粒子の減少した排気ガスが真空ポンプ２の中に入るた
め、ポンプケーシングや回転翼等への塩化アンモニウム
の付着が減少し、故障が少なくなり真空ポンプの長寿命
化が図れる。In the present embodiment, since the exhaust gas in which the ammonium chloride particles are reduced enters the vacuum pump 2, the adhesion of ammonium chloride to the pump casing, the rotor blades, etc. is reduced, and the failure is reduced and the vacuum pump is reduced. Can have a long life.
【００１２】塩化アンモニウムは水溶性であるので捕集
部をカートリッジ式にして取り出しを容易にしておくこ
とにより、水洗いで簡単に捕集部の洗浄が出来る利点が
ある。また、塩化アンモニウムを含まない排気ガスが真
空ポンプ２の中に入るので、シースエアとしての窒素ガ
スは不要となるか、極く僅かですみ経済的にも有利であ
る。Since ammonium chloride is water-soluble, there is an advantage that the collecting part can be easily washed by washing with water by making the collecting part into a cartridge type so as to be easily taken out. Further, since the exhaust gas containing no ammonium chloride enters the vacuum pump 2, the nitrogen gas as the sheath air is unnecessary, or it is very small, which is economically advantageous.
【００１３】以上、ジクロールシランガスとアンモニア
ガスを使用してシリコンナイトライドを生膜する例につ
いて述べたが、本発明は、ＣＶＤ装置を用い気相反応か
ら主生成物以外に副生成物を生成するような場合はすべ
て適用できる。The example of forming a silicon nitride film by using dichlorosilane gas and ammonia gas has been described above. In the present invention, a by-product is produced from a gas phase reaction by using a CVD apparatus in addition to the main product. All such cases are applicable.
【００１４】[0014]
【発明の効果】以上説明したように本発明によれば、Ｃ
ＶＤ反応管で生成される副生成物を正または負に荷電し
電気的に捕集することにより、副生成物を効果的に除去
することができ、真空ポンプの故障や寿命低下を防止す
ることができる。As described above, according to the present invention, C
A by-product generated in a VD reaction tube is positively or negatively charged and electrically collected, so that the by-product can be effectively removed, and failure of the vacuum pump and shortening of life can be prevented. You can
【図１】本発明に係るＣＶＤ装置の一実施例を示す説明
図である。FIG. 1 is an explanatory view showing an embodiment of a CVD apparatus according to the present invention.
【図２】図１に示すＣＶＤ装置の作用を説明する説明図
である。FIG. 2 is an explanatory view explaining the operation of the CVD apparatus shown in FIG.
１ ＣＶＤ反応管 ２ 真空ポンプ ３ イオン源 ４ 放射性物質 ５ 電気的捕集部 1 CVD reaction tube 2 Vacuum pump 3 Ion source 4 Radioactive material 5 Electrical collector
Claims (2)
減圧下で使用されるＣＶＤ装置において、前記ＣＶＤ反
応管と真空源との間に、ＣＶＤ反応管の中で生成される
副生成物を正又は負に荷電するイオン源と、該イオン源
によってイオン化された副生成物を電気的に捕集するた
めの電気的捕集部とを設けたことを特徴とするＣＶＤ装
置。1. In a CVD apparatus equipped with a CVD reaction tube connected to a vacuum source and used under reduced pressure, a by-product formed in the CVD reaction tube between the CVD reaction tube and the vacuum source. A CVD apparatus comprising: an ion source for positively or negatively charging the anode, and an electrical collector for electrically capturing a by-product ionized by the ion source.
ｍ）、クリプトン（85Ｋｒ）、ポロニウム（ 210Ｐｏ）
等の軟β線やα線を放射する物質からなることを特徴と
する請求項１記載のＣＶＤ装置。2. The ion source is americium ( 241 A
m), krypton ( 85 Kr), polonium ( 210 Po)
The CVD apparatus according to claim 1, which is made of a substance that emits soft β-rays or α-rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20063292A JPH0620972A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20063292A JPH0620972A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0620972A true JPH0620972A (en) | 1994-01-28 |
Family
ID=16427615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20063292A Pending JPH0620972A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11117531B2 (en) | 2016-10-31 | 2021-09-14 | Autonetworks Technologies, Ltd. | Wire harness module |
-
1992
- 1992-07-03 JP JP20063292A patent/JPH0620972A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11117531B2 (en) | 2016-10-31 | 2021-09-14 | Autonetworks Technologies, Ltd. | Wire harness module |
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