JPH0620973A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPH0620973A JPH0620973A JP20063392A JP20063392A JPH0620973A JP H0620973 A JPH0620973 A JP H0620973A JP 20063392 A JP20063392 A JP 20063392A JP 20063392 A JP20063392 A JP 20063392A JP H0620973 A JPH0620973 A JP H0620973A
- Authority
- JP
- Japan
- Prior art keywords
- cvd
- vacuum pump
- product
- corona discharge
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006227 byproduct Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000000047 product Substances 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 10
- 235000019270 ammonium chloride Nutrition 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＣＶＤ装置に係り、特に
ＣＶＤ反応管内の気相反応で生成される副生成物をコロ
ナ放電により荷電し、電気的に副生成物を除去すること
ができるＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus, and more particularly to a CVD apparatus capable of electrically charging a by-product produced by a gas phase reaction in a CVD reaction tube by corona discharge to electrically remove the by-product. Regarding the device.
【０００２】[0002]
【従来の技術】ＣＶＤ装置を使用して成膜を行ったり、
微粒子を造る場合、主生成物以外に副生成物ができる場
合がある。主生成物は基板上に薄膜を形成したり、微粒
子として取り出されて使用される。しかし、副生成物は
排気系の中に流れ、冷やされ固体粒子となって真空ポン
プの中に入り込み、ケーシングや回転翼に付着し真空ポ
ンプの故障や寿命低下の原因となっていた。2. Description of the Related Art A CVD apparatus is used to form a film,
When producing fine particles, by-products may be formed in addition to the main product. The main product is used by forming a thin film on the substrate or extracting as a fine particle. However, the by-product flows into the exhaust system, is cooled, becomes solid particles, enters the vacuum pump, and adheres to the casing and the rotor blades, causing a failure and a shortened life of the vacuum pump.
【０００３】[0003]
【発明が解決しようとする課題】従来、副生成物が真空
ポンプの中に入り込むことを防止するために、ガストラ
ップを設け、排気ガスを強制的に冷却し管壁に付着さ
せ、副生成物を取り除く方法が取られているが、効果的
ではない。また、真空ポンプ内ではケーシングや回転翼
に副生成物が付着しないようシースエアとして多量の清
浄窒素ガスを流しているが、これも十分効果があるとは
言えない。Conventionally, in order to prevent a by-product from entering a vacuum pump, a gas trap is provided, and exhaust gas is forcibly cooled and adhered to a pipe wall. Has been taken, but it is not effective. In the vacuum pump, a large amount of clean nitrogen gas is made to flow as sheath air so as to prevent by-products from adhering to the casing and the rotary blades, but this cannot be said to be sufficiently effective.
【０００４】本発明は上述の事情に鑑みなされたもの
で、その目的とする処は、効果的に副生成物を取り除
き、真空ポンプの故障や寿命低下を防ぐことができるＣ
ＶＤ装置を提供することにある。The present invention has been made in view of the above-mentioned circumstances, and a purpose thereof is to effectively remove a by-product and prevent a failure or a reduction in life of a vacuum pump.
It is to provide a VD device.
【０００５】[0005]
【課題を解決するための手段】上述した目的を達成する
ため、本発明のＣＶＤ装置は、真空源に連通されたＣＶ
Ｄ反応管を備え減圧下で使用されるＣＶＤ装置におい
て、前記ＣＶＤ反応管と真空源との間に、ＣＶＤ反応管
の中で生成される副生成物をコロナ放電により荷電する
コロナ放電部と、該コロナ放電部によって荷電された副
生成物を電気的に捕集するための電気的捕集部とを設け
たことを特徴とするものである。In order to achieve the above-mentioned object, the CVD apparatus of the present invention comprises a CV connected to a vacuum source.
In a CVD apparatus equipped with a D reaction tube and used under reduced pressure, a corona discharge part for charging a by-product generated in the CVD reaction tube by corona discharge between the CVD reaction tube and a vacuum source, An electrical collecting part for electrically collecting the by-product charged by the corona discharge part is provided.
【０００６】[0006]
【作用】前述した構成からなる本発明によれば、ＣＶＤ
反応管で生成された副生成物はコロナ放電部を通過する
間にコロナ放電により発生するイオンまたは電子により
荷電される。そして、コロナ放電部によって荷電された
副生成物は電場が形成された電気的捕集部において捕集
される。したがって、副生成物を真空ポンプに入る前に
効果的に除去することができ、真空ポンプの故障や寿命
低下を防止することができる。According to the present invention having the above-described structure, the CVD
The by-product generated in the reaction tube is charged by ions or electrons generated by the corona discharge while passing through the corona discharge part. Then, the by-products charged by the corona discharge unit are collected in the electric collector in which the electric field is formed. Therefore, the by-product can be effectively removed before entering the vacuum pump, and the vacuum pump can be prevented from malfunctioning or from shortening its life.
【０００７】[0007]
【実施例】以下、本発明に係るＣＶＤ装置の一実施例を
図１及び図２を参照して説明する。本発明に係るＣＶＤ
装置においては、図１に示されるように、ＣＶＤ反応管
１と排気系の真空ポンプ２との間にコロナ放電部３と、
電気的捕集部５とが設置されている。コロナ放電部３は
放電電極４を備えている。この放電電極４は線対円筒
型、点対平面型、点対多数平面型等、いずれでも良い。
コロナ放電部３を通過する副生成物は、コロナ放電によ
り発生したイオン及び電子により荷電される。また、電
気的捕集部５には、複数の平板状の電極６が配設されて
おり、これら複数の電極６は直流電源７に接続されてい
る。したがって、対向する電極６，６間には電場が形成
されており、コロナ放電部３で荷電された副生成物は電
気的捕集部５によって捕集される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the CVD apparatus according to the present invention will be described below with reference to FIGS. CVD according to the present invention
In the apparatus, as shown in FIG. 1, a corona discharge unit 3 is provided between a CVD reaction tube 1 and an exhaust system vacuum pump 2,
An electrical collection unit 5 is installed. The corona discharge unit 3 includes a discharge electrode 4. The discharge electrode 4 may be a line-to-cylinder type, a point-to-plane type, a point-to-many plane type, or the like.
The by-products passing through the corona discharge part 3 are charged by the ions and electrons generated by the corona discharge. In addition, a plurality of flat plate-shaped electrodes 6 are arranged in the electrical collector 5, and the plurality of electrodes 6 are connected to a DC power supply 7. Therefore, an electric field is formed between the electrodes 6 and 6 facing each other, and the by-products charged in the corona discharge part 3 are collected by the electrical collection part 5.
【０００８】次に、前述のように構成されたＣＶＤ装置
の作用を図２を参照して説明する。この作用の説明にお
いては、ジクロールシランガス（ＳｉＨ2Ｃｌ2）とアン
モニアガス（ＮＨ3 ）を使用してシリコンナイトライド
（Ｓｉ3Ｎ4）を成膜する例を用いて説明する。Next, the operation of the CVD apparatus configured as described above will be described with reference to FIG. In the description of this action, an example of forming a film of silicon nitride (Si 3 N 4 ) using dichlorosilane gas (SiH 2 Cl 2 ) and ammonia gas (NH 3 ) will be described.
【０００９】半導体の絶縁膜に用いられるシリコンナイ
トライドを成膜する時、ジクロールシランガスとアンモ
ニアガスを使用して行う場合がしばしばある。この反応
は下記の様に表される。 ３ＳｉＨ2Ｃｌ2＋１０ＮＨ3 → Ｓｉ3Ｎ4＋６ＮＨ4Ｃｌ＋６Ｈ2 この時、副生成物、塩化アンモニウム（ＮＨ4 Ｃｌ）が
生成する。塩化アンモニウムは１８４℃で気体から固体
となる。１８４℃より高温にあるＣＶＤ反応管（約７０
０〜９５０℃）の中ではガス状であり、排気系の中に流
れでて冷却され数ｎｍ〜数μｍ程度の粒子となる。生成
された粒子は一部配管に付着し、その多くは真空ポンプ
の中に入り込み、ケーシングや回転翼に付着して摩擦や
かじり等の故障の原因となり、真空ポンプの寿命を低下
させる。Dichlorosilane gas and ammonia gas are often used when forming a silicon nitride film used for an insulating film of a semiconductor. This reaction is represented as follows: 3SiH 2 Cl 2 + 10NH 3 → Si 3 N 4 + 6NH 4 Cl + 6H 2 At this time, a by-product, ammonium chloride (NH 4 Cl), is produced. Ammonium chloride changes from a gas to a solid at 184 ° C. CVD reaction tubes (about 70
(0 to 950 ° C.), it is gaseous, and flows into the exhaust system to be cooled to form particles of several nm to several μm. The produced particles partially adhere to the pipe, and most of them enter the vacuum pump and adhere to the casing and the rotating blades, causing troubles such as friction and galling, which shortens the life of the vacuum pump.
【００１０】そこで、本実施例においては、図１に示さ
れるようにＣＶＤ反応管１と真空ポンプ２の間にコロナ
放電部３と電気的捕集部５を設け、これらコロナ放電部
３及び電気的捕集部５の中を冷却され固体となった副生
成物である塩化アンモニウムを含む排気ガスが通過する
ようにする。このとき、コロナ放電部３では、図２に示
されるようにコロナ放電により発生したイオン及び電子
により塩化アンモニウムの粒子を荷電させる。荷電され
た塩化アンモニウムの粒子は、電場を負荷した電気的捕
集部５において捕集される。Therefore, in the present embodiment, as shown in FIG. 1, a corona discharge part 3 and an electrical collection part 5 are provided between the CVD reaction tube 1 and the vacuum pump 2, and the corona discharge part 3 and the electrical collection part 5 are provided. Exhaust gas containing ammonium chloride, which is a by-product that has been cooled and solidified, passes through the target collection section 5. At this time, in the corona discharge part 3, as shown in FIG. 2, the ammonium chloride particles are charged by the ions and electrons generated by the corona discharge. The charged ammonium chloride particles are collected in the electric collector 5 loaded with an electric field.
【００１１】塩化アンモニウムの粒子の減少した排気ガ
スが真空ポンプ２の中に入るため、ポンプケーシングや
回転翼等への塩化アンモニウムの付着が減少し、故障が
少なくなり真空ポンプの長寿命化が図られる。Since the exhaust gas in which the particles of ammonium chloride are reduced enters the vacuum pump 2, the adhesion of ammonium chloride to the pump casing, the rotor blades, etc. is reduced, the failure is reduced, and the life of the vacuum pump is extended. To be
【００１２】コロナ放電部３の放電針、電気的捕集部５
の電極板をガス排気方向と平行に置くことにより圧力損
失の恐れがない。また、塩化アンモニウムは水溶性であ
るので捕集部をカートリッジ式にして取り出しを容易に
しておくことにより、水洗いで簡単に捕集部の洗浄が出
来る利点がある。また、塩化アンモニウムを含まない排
気ガスが真空ポンプ２の中に入るので、シースエアとし
ての窒素ガスは不要となるか、極く僅かですみ経済的に
も有利である。The discharge needle of the corona discharge part 3 and the electrical collection part 5
There is no risk of pressure loss by placing the electrode plate in parallel with the gas exhaust direction. Further, since ammonium chloride is water-soluble, there is an advantage that the trapping portion can be easily washed by washing with water by making the trapping portion into a cartridge type for easy taking out. Further, since the exhaust gas containing no ammonium chloride enters the vacuum pump 2, the nitrogen gas as the sheath air is unnecessary, or it is very small, which is economically advantageous.
【００１３】以上、ジクロールシランガスとアンモニア
ガスを使用してシリコンナイトライドを生膜する例につ
いて述べたが、本発明は、ＣＶＤ装置を用い気相反応か
ら主生成物以外に副生成物を生成するような場合はすべ
て適用できる。The example of forming a silicon nitride film by using dichlorosilane gas and ammonia gas has been described above. In the present invention, a by-product is produced from a gas phase reaction by using a CVD apparatus in addition to the main product. All such cases are applicable.
【００１４】[0014]
【発明の効果】以上説明したように本発明によれば、Ｃ
ＶＤ反応管で生成される副生成物をコロナ放電により荷
電し電気的に捕集することにより、副生成物を効果的に
除去することができ、真空ポンプの故障や寿命低下を防
止することができる。As described above, according to the present invention, C
By charging the by-product generated in the VD reaction tube by corona discharge and electrically collecting the by-product, the by-product can be effectively removed, and failure of the vacuum pump and reduction of life can be prevented. it can.
【図１】本発明に係るＣＶＤ装置の一実施例を示す説明
図である。FIG. 1 is an explanatory view showing an embodiment of a CVD apparatus according to the present invention.
【図２】図１に示すＣＶＤ装置の作用を説明する説明図
である。FIG. 2 is an explanatory view explaining the operation of the CVD apparatus shown in FIG.
１ ＣＶＤ反応管 ２ 真空ポンプ ３ コロナ放電部 ４ 放電電極 ５ 電気的捕集部 1 CVD Reaction Tube 2 Vacuum Pump 3 Corona Discharge Section 4 Discharge Electrode 5 Electrical Collection Section
Claims (1)
減圧下で使用されるＣＶＤ装置において、前記ＣＶＤ反
応管と真空源との間に、ＣＶＤ反応管の中で生成される
副生成物をコロナ放電により荷電するコロナ放電部と、
該コロナ放電部によって荷電された副生成物を電気的に
捕集するための電気的捕集部とを設けたことを特徴とす
るＣＶＤ装置。1. In a CVD apparatus equipped with a CVD reaction tube connected to a vacuum source and used under reduced pressure, a by-product formed in the CVD reaction tube between the CVD reaction tube and the vacuum source. A corona discharge part that charges the
A CVD apparatus provided with an electric collector for electrically collecting the by-product charged by the corona discharge unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20063392A JPH0620973A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20063392A JPH0620973A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0620973A true JPH0620973A (en) | 1994-01-28 |
Family
ID=16427633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20063392A Pending JPH0620973A (en) | 1992-07-03 | 1992-07-03 | Cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620973A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025003252A (en) * | 2023-06-21 | 2025-01-09 | ミラエボ カンパニー リミテッド | A device for collecting reaction by-products in semiconductor processing by inducing thermal decomposition in the high temperature range and oxidation reaction in the low temperature range |
-
1992
- 1992-07-03 JP JP20063392A patent/JPH0620973A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025003252A (en) * | 2023-06-21 | 2025-01-09 | ミラエボ カンパニー リミテッド | A device for collecting reaction by-products in semiconductor processing by inducing thermal decomposition in the high temperature range and oxidation reaction in the low temperature range |
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