JPH062147Y2 - Gap switch - Google Patents
Gap switchInfo
- Publication number
- JPH062147Y2 JPH062147Y2 JP18843987U JP18843987U JPH062147Y2 JP H062147 Y2 JPH062147 Y2 JP H062147Y2 JP 18843987 U JP18843987 U JP 18843987U JP 18843987 U JP18843987 U JP 18843987U JP H062147 Y2 JPH062147 Y2 JP H062147Y2
- Authority
- JP
- Japan
- Prior art keywords
- gap switch
- contact electrode
- gdb
- mixture
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 8
- 238000010891 electric arc Methods 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Contacts (AREA)
Description
【考案の詳細な説明】 ［産業上の利用分野］ 本考案は、例えば、サージ吸収素子試験装置の高電圧開
閉のために用いられるギャップスイッチに係り、特に、
接点電極の表面に保護層を形成することにより耐アーク
性を向上させたギャップスイッチに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a gap switch used for opening and closing a high voltage of, for example, a surge absorber testing apparatus, and
The present invention relates to a gap switch having improved arc resistance by forming a protective layer on the surface of a contact electrode.
［従来の技術］ 従来、アレスタやバリスタ或いはこれらを複合化した素
子等のサージ吸収素子の特性を試験する試験装置は、高
圧電源にＣＬ回路を接続すると共に、上記ＣＬ回路にギ
ャップスイッチを介装した構造と成されている。即ち、
上記試験装置は、第３図に示す如く、高圧電源ＨＶに充
電用抵抗Ｒ１を介してコンデンサＣを並列接続すると共
に、これにギャップスイッチ１を介して波頭長調整用抵
抗Ｒ２及び波頭長調整用コイルＬを直列接続し、更に波
尾長調整用抵抗Ｒ３を並列接続した構造を有している。[Prior Art] Conventionally, a test apparatus for testing the characteristics of a surge absorbing element such as an arrester, a varistor, or an element in which these are combined has connected a CL circuit to a high-voltage power supply and provided a gap switch in the CL circuit. The structure is made. That is,
As shown in FIG. 3, the above-mentioned test apparatus has a capacitor C connected in parallel to a high-voltage power supply HV via a charging resistor R 1 and a wavefront length adjusting resistor R 2 and a wavefront length connected thereto via a gap switch 1. It has a structure in which the adjusting coils L are connected in series and the wave tail length adjusting resistor R 3 is connected in parallel.
而して、上記サージ吸収素子の試験に際しては、上記ギ
ャップスイッチ１を操作してコンデンサＣに蓄積された
電荷を放出させ、サージ吸収素子Ｓに高電圧のインパル
スサージを印加する。When testing the surge absorbing element, the gap switch 1 is operated to release the electric charge accumulated in the capacitor C, and a high voltage impulse surge is applied to the surge absorbing element S.
上記ギャップスイッチは、例えば、略球状に加工した真
鍮に硬質メッキを施した一対の接点電極３ａ，３ｂを対
向配置した構造と成されており、同様の材料より成る第
３の接点電極３ｃを上記一対の接点電極３ａ，３ｂに接
触させたり離したりすることによってギャップスイッチ
１の開閉動作を行っている。The gap switch has, for example, a structure in which a pair of contact electrodes 3a and 3b made of hard plated brass, which is processed into a substantially spherical shape, are arranged to face each other, and a third contact electrode 3c made of a similar material is used as the contact electrode 3c. The opening / closing operation of the gap switch 1 is performed by bringing the pair of contact electrodes 3a and 3b into and out of contact with each other.
［考案が解決しようとする問題点］ ところが、上記試験装置が発生するインパルスサージ
は、その電圧値が３〜７［ｋｖ］程度と高いため、上記
ギャップスイッチの開閉動作に伴って発生する接点電極
間のアーク放電によって、接点電極の接触部分にスパッ
タして消耗し、甚だしい場合には溶着を生じてギャップ
スイッチの寿命を著しく短いものとしている。[Problems to be solved by the invention] However, since the voltage value of the impulse surge generated by the test device is as high as about 3 to 7 [kv], the contact electrode generated by the opening / closing operation of the gap switch. Due to the arc discharge between them, the contact portion of the contact electrode is sputtered and consumed, and in extreme cases, welding is caused to shorten the life of the gap switch remarkably.
本考案は、上述の点に鑑み案出されたもので、接点電極
に耐アーク性を付与することにより、寿命特性を向上さ
せたギャップスイッチの実現を目的とする。The present invention has been devised in view of the above points, and an object thereof is to provide a gap switch having improved life characteristics by imparting arc resistance to a contact electrode.
［問題を解決するための手段］ 上述の目的を達成するため、本考案のギャップスイッチ
は、接点電極の表面に、ＹＢ６、ＬａＢ６、ＣｅＢ６、
ＧｄＢ６、ＹＢ４、ＧｄＢ４から成る群より選択される
物質の単体又は混合物を少なくとも含む保護層を形成し
たことを特徴とするものである。[Means for Solving the Problem] In order to achieve the above-mentioned object, the gap switch of the present invention has YB 6 , LaB 6 , CeB 6 , and
It is characterized in that a protective layer containing at least a single substance or a mixture of substances selected from the group consisting of GdB 6 , YB 4 , and GdB 4 is formed.
［作用］ 本考案は、アーク放電によるスパッタが少ない導電物質
である希土類元素の六硼化物及び四硼化物であるＹ
Ｂ６、ＬａＢ６、ＣｅＢ６、ＧｄＢ６、ＹＢ４、ＧｄＢ
４から成る群より選択される物質の単体又は混合物を少
なくとも含む保護層を接点電極の表面に形成したので、
ギャップスイッチの開閉動作に伴って発生するアーク放
電による接点電極のスパッタが著しく減少し、接点電極
同士が溶着する恐れがほとんどなくなる。[Operation] The present invention is a rare earth element hexaboride and tetraboride Y which is a conductive material with less spatter by arc discharge.
B 6, LaB 6, CeB 6 , GdB 6, YB 4, GdB
Since a protective layer containing at least a single substance or a mixture of substances selected from the group consisting of 4 is formed on the surface of the contact electrode,
Sputtering of the contact electrodes due to arc discharge generated by the opening / closing operation of the gap switch is significantly reduced, and there is almost no risk of the contact electrodes being welded to each other.
［実施例］ 以下、図面に基づいて本考案の一実施例を説明する。第
１図は、本考案の一実施例に係るギャップスイッチを示
す要部側面図である。図に於いてギャップスイッチ１
は、表面にそれぞれ保護層２ａ，２ｂを形成した第１の
接点電極３ａ及び第２の接点電極３ｂを基台４ａ，４ｂ
に取り付けて所定距離はなして対向配置し、更に、同じ
く表面に保護層２ｃを形成して基台４ｃに取り付けた第
３の接点電極３ｃを、上記第１の接点電極３ａ及び第２
の接点電極３ｂと対向させて配置した構造を有してい
る。上記第３の接点電極３ｃは、上記第１の接点電極３
ａと第２の接点電極３ｂの中心を結ぶ線と略直交する方
向に移動自在となされ、第１の接点電極３ａ及び第２の
接点電極３ｂと接触させる。（破線）ことによって上記
両接点電極３ａ，３ｂを電気的に接続してギャップスイ
ッチ１を閉じる様に構成されている。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a side view of essential parts showing a gap switch according to an embodiment of the present invention. In the figure, gap switch 1
Includes a first contact electrode 3a and a second contact electrode 3b on the surfaces of which protective layers 2a and 2b are respectively formed, and bases 4a and 4b.
The third contact electrode 3c attached to the base 4c and further provided with a protective layer 2c on the surface and facing each other with a predetermined distance between the first contact electrode 3a and the second contact electrode 3a.
The contact electrode 3b is arranged so as to face the contact electrode 3b. The third contact electrode 3c is the first contact electrode 3
The first contact electrode 3a and the second contact electrode 3b are in contact with the first contact electrode 3a and the second contact electrode 3b. By connecting the contact electrodes 3a and 3b to each other (broken line), the gap switch 1 is closed.
上記第１の接点電極３ａ、第２の接点電極３ｂ及び第３
の接点電極３ｃは、それぞれ真鍮を略球状に加工した接
点部３１ａ，３２ｂ，３２ｃから基台取付け用のネジ部
３２ａ，３２ｂ，３２ｃを突出させた形状を有してお
り、その表面に硬質クロムメッキを施すと共に、更に上
記メッキ上に、六硼化ランタン（ＬａＢ６）をプラズマ
溶射して保護層２ａ，２ｂ，２ｃを形成している。尚、
第１図に於いては、上記保護層２ａ，２ｂ，２ｃを接点
電極接点部３１ａ，３１ｂ，３１ｃ全体に形成している
が、第２図に示す如く接点部３１ａ，３１ｂ，３１ｃの
前方部分のみに形成しても良く、要は、ギャップスイッ
チの開閉動作時に於いて接点電極３ａ，３ｂ，３ｃ同士
が接触する部分に形成されていれば足りる。The first contact electrode 3a, the second contact electrode 3b and the third
The contact electrode 3c has a shape in which the screw parts 32a, 32b, 32c for mounting the base are projected from the contact parts 31a, 32b, 32c, which are made by processing brass into a substantially spherical shape, and the surface thereof is made of hard chrome. In addition to plating, lanthanum hexaboride (LaB 6 ) is plasma sprayed on the plating to form protective layers 2a, 2b, 2c. still,
In FIG. 1, the protective layers 2a, 2b, 2c are formed on the contact electrode contact portions 31a, 31b, 31c as a whole, but as shown in FIG. 2, the front portions of the contact portions 31a, 31b, 31c. It suffices to form only the contact electrodes 3a, 3b, 3c during the opening / closing operation of the gap switch.
上記保護層２ａ，２ｂ，２ｃは、アーク放電による消耗
が少ない導電性を有する層として形成する必要があり、
この条件を満たす材料としては、希土類元素の六硼化物
（ＹＢ６，ＬａＢ６，ＣｅＢ６，ＧｄＢ６等）若しくは
四硼化物（ＹＢ４，ＧｄＢ４等）の単体又は混合物が適
しており、中でも上述した六硼化ランタン（ＬａＢ６）
が最適である。また、アーク放電に対する耐消耗性を有
する導電材料としては、モリブデン、タングステン若し
くは表面にアルミナの薄層が形成されたアルミニウムの
単体又は混合物があるが、これらを上記希土類元素の硼
化物に混合して用いても略同等の効果が得られるもので
ある。The protective layers 2a, 2b, 2c need to be formed as conductive layers that are less consumed by arc discharge.
As a material satisfying this condition, hexaboride (YB 6 , LaB 6 , CeB 6 , GdB 6, etc.) of a rare earth element or tetraboride (YB 4 , GdB 4, etc.) alone or a mixture is suitable, and among them, Lanthanum hexaboride (LaB 6 ) described above
Is the best. Further, as the conductive material having wear resistance against arc discharge, there are molybdenum, tungsten, or a simple substance or a mixture of aluminum having a thin layer of alumina formed on the surface thereof. These are mixed with a boride of the above rare earth element. Even if it is used, substantially the same effect can be obtained.
本考案のギャップスイッチと従来のギャップスイッチと
の寿命特性を比較するため、ギャップスイッチを開閉し
て電圧値７．５［ｋｖ］、電圧波形８×２０［μｓ］、
電流値１，０００［Ａ］のサージを１［回／分］の条件
で発生させたところ、従来品が平均３万回で溶着したの
に対し、本考案品は約２４万回で溶着が発生し、その寿
命が略８倍となった。In order to compare the life characteristics of the gap switch of the present invention and the conventional gap switch, the gap switch is opened and closed to a voltage value of 7.5 [kv], a voltage waveform of 8 × 20 [μs],
When a surge with a current value of 1,000 [A] was generated under the condition of 1 [times / minute], the conventional product welded at an average of 30,000 times, whereas the product of the present invention welded at about 240,000 times. It occurred and its life was increased by about 8 times.
尚、上記実施例に於いては、ギャップスイッチをサージ
吸収素子用の試験装置に用いた場合について述べたが、
これに限られることはなく、高電圧、高電流を開閉する
必要のある装置のギャップスイッチとして、広く適用可
能である。In the above embodiment, the case where the gap switch is used in the test device for the surge absorbing element has been described.
The present invention is not limited to this, and can be widely applied as a gap switch of a device that needs to open and close a high voltage and a high current.
［考案の効果］ 以上詳述の如く、本考案のギャップスイッチは、接点電
極の表面に、アーク放電によるスパッタが少ない導電物
質である希土類元素の六硼化物及び四硼化物であるＹＢ
６、ＬａＢ６、ＣｅＢ６、ＧｄＢ６、ＹＢ４、ＧｄＢ４
から成る群より選択される物質の単体又は混合物を少な
くとも含む保護層を形成しているので、開閉操作による
アーク放電が生じても接点電極がほとんどスパッタしな
いため長期に渡って溶着が発生せず、その寿命特性が格
段に向上するものである。[Effects of the Invention] As described in detail above, the gap switch of the present invention is a rare earth element hexaboride or tetraboride YB which is a conductive material on the surface of a contact electrode and has a small amount of spatter due to arc discharge.
6 , LaB 6 , CeB 6 , GdB 6 , YB 4 , GdB 4
Since a protective layer containing at least a single substance or a mixture of substances selected from the group consisting of is formed, welding does not occur for a long period of time because the contact electrode hardly sputters even when arc discharge occurs due to opening / closing operation, The life characteristics are remarkably improved.
【図面の簡単な説明】 第１図は、本考案の一実施例に係るギャップスイッチの
要部側面図、第２図は、保護層形成領域例を示す接点電
極の側面図であり、第３図は、ギャップスイッチを用い
たサージ吸収素子試験装置の回路図である。 １・・・ギャップスイッチ、２ａ，２ｂ，２ｃ・・・保
護層、３ａ，３ｂ，３ｃ・・・接点電極。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view of a main part of a gap switch according to an embodiment of the present invention, FIG. 2 is a side view of a contact electrode showing an example of a protective layer forming region, and FIG. FIG. 1 is a circuit diagram of a surge absorber testing device using a gap switch. 1 ... Gap switch, 2a, 2b, 2c ... Protective layer, 3a, 3b, 3c ... Contact electrode.
Claims (3)
ｅＢ６、ＧｄＢ６、ＹＢ４、ＧｄＢ４から成る群より選
択される物質の単体又は混合物を少なくとも含む保護層
を形成したことを特徴とするギャップスイッチ。1. YB 6 , LaB 6 , and C on the surface of the contact electrode.
A gap switch comprising a protective layer containing at least a single substance or a mixture of substances selected from the group consisting of eB 6 , GdB 6 , YB 4 , and GdB 4 .
ＧｄＢ６、ＹＢ４、ＧｄＢ４から成る群より選択される
物質の単体又は混合物と、モリブデン、タングステン若
しくは表面にアルミナの薄層が形成されたアルミニウム
の単体又は混合物との混合物より成ることを特徴とする
実用新案登録請求の範囲第１項に記載のギャップスイッ
チ。2. The protective layer comprises YB 6 , LaB 6 , CeB 6 ,
A single substance or a mixture of substances selected from the group consisting of GdB 6 , YB 4 , and GdB 4 , and a mixture of molybdenum, tungsten, or a single substance or mixture of aluminum with a thin layer of alumina formed on the surface thereof. The gap switch according to claim 1 for utility model registration.
徴とする実用新案登録請求の範囲第１項又は第２項の何
れかに記載のギャップスイッチ。3. The gap switch according to claim 1 or 2, wherein the protective layer is a plasma sprayed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18843987U JPH062147Y2 (en) | 1987-12-11 | 1987-12-11 | Gap switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18843987U JPH062147Y2 (en) | 1987-12-11 | 1987-12-11 | Gap switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0193575U JPH0193575U (en) | 1989-06-20 |
| JPH062147Y2 true JPH062147Y2 (en) | 1994-01-19 |
Family
ID=31479531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18843987U Expired - Lifetime JPH062147Y2 (en) | 1987-12-11 | 1987-12-11 | Gap switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062147Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009199804A (en) * | 2008-02-20 | 2009-09-03 | Hitoshi Kijima | Contact and switch |
| JP2011128130A (en) * | 2010-03-12 | 2011-06-30 | Nissin Electric Co Ltd | Impulse current generating device |
-
1987
- 1987-12-11 JP JP18843987U patent/JPH062147Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0193575U (en) | 1989-06-20 |
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