JPH06273921A - Mask protecting pellicle - Google Patents
Mask protecting pellicleInfo
- Publication number
- JPH06273921A JPH06273921A JP6194993A JP6194993A JPH06273921A JP H06273921 A JPH06273921 A JP H06273921A JP 6194993 A JP6194993 A JP 6194993A JP 6194993 A JP6194993 A JP 6194993A JP H06273921 A JPH06273921 A JP H06273921A
- Authority
- JP
- Japan
- Prior art keywords
- pellicle
- air
- permeable
- prevent
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000035699 permeability Effects 0.000 claims description 5
- 239000000428 dust Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置の製造工程
のうちのフォトリソグラフィー工程に用いられるマスク
保護用ペリクルに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pellicle for mask protection used in a photolithography process in the manufacturing process of semiconductor devices.
【0002】[0002]
【従来の技術】半導体装置の製造工程には、フォトマス
クのパターンを半導体ウェーハに転写してパターンを形
成するフォトリソグラフィー工程が必要である。この工
程でフォトマスクのパターン面に塵埃等の異物が付着し
ていると、これがウェーハにも転写され、パターン欠陥
が生じ、結果的に半導体装置の製造歩留りが低下する。
このようなことを防ぐために、従来はマスク保護用ペリ
クルを用いていた。2. Description of the Related Art A semiconductor device manufacturing process requires a photolithography process for forming a pattern by transferring a pattern of a photomask onto a semiconductor wafer. If foreign matter such as dust adheres to the pattern surface of the photomask in this step, it is also transferred to the wafer, pattern defects occur, and as a result, the manufacturing yield of semiconductor devices decreases.
In order to prevent such a situation, conventionally, a mask protection pellicle has been used.
【0003】図2は従来のマスク保護用ペリクルを模式
的に示した斜視図で、21はペリクルフレーム、22は
ペリクル膜、23はフォトマスクである。ペリクルフレ
ーム21の上面には、粘着剤を用いて透光性のペリクル
膜22を張設している。ペリクルフレームの下面にも粘
着剤を塗布し、フォトマスク上にペリクルフレームを装
着している。FIG. 2 is a perspective view schematically showing a conventional mask protecting pellicle, in which 21 is a pellicle frame, 22 is a pellicle film, and 23 is a photomask. On the upper surface of the pellicle frame 21, a translucent pellicle film 22 is stretched with an adhesive. An adhesive is also applied to the lower surface of the pellicle frame, and the pellicle frame is mounted on the photomask.
【0004】[0004]
【発明が解決しようとする課題】図2に示すように従来
のマスク保護用ペリクルは、ペリクル外部の気圧の変動
に応じて、ペリクル膜22が凸状になったり、凹状にな
ったりするので、凸状のペリクル膜22がフォトマスク
のケースに触れて傷ついたり、破れることがあり、フォ
トマスクのパターン面への塵埃等の付着防止というペリ
クル本来の機能を果さなくなるという問題点があった。As shown in FIG. 2, in the conventional mask protecting pellicle, the pellicle film 22 becomes convex or concave depending on the fluctuation of the atmospheric pressure outside the pellicle. There is a problem in that the convex pellicle film 22 may be damaged or broken by touching the case of the photomask, and the pellicle's original function of preventing adhesion of dust or the like to the pattern surface of the photomask may not be fulfilled.
【0005】本発明の目的は、ペリクル外部の気圧の変
動によるペリクル膜の形状変化を防止し、信頼性の高い
マスク保護用ペリクルを提供することである。An object of the present invention is to provide a highly reliable mask protecting pellicle which prevents a change in shape of the pellicle film due to a change in atmospheric pressure outside the pellicle.
【0006】[0006]
【課題を解決するための手段】本発明におけるマスク保
護用ペリクルは、ペリクル膜が通気性を有することを特
徴とするものである。The pellicle for mask protection according to the present invention is characterized in that the pellicle film has air permeability.
【0007】[0007]
【実施例】図1は、実施例のマスク保護用ペリクルを模
式的に示した斜視図である。1 is a perspective view schematically showing a mask protecting pellicle according to an embodiment.
【0008】ペリクルフレーム11へのペリクル膜12
やフォトマスク13の設置方法は、従来例と同様であ
る。Pellicle film 12 on pellicle frame 11
The method of installing the photomask 13 and the photomask 13 is the same as that of the conventional example.
【0009】本実施例が図2の従来例と異なる点は、ペ
リクル膜12の一部に1個あるいは複数個の孔14を設
け、ペリクル膜12に通気性をもたせたことである。こ
こで、孔14の径は特に制限はないが、塵埃等の侵入を
防ぐ意味から1μm以下が望ましい。また、孔14を設
ける場所は、パターン転写に影響がない場所が望まし
い。The present embodiment is different from the conventional example of FIG. 2 in that one or more holes 14 are provided in a part of the pellicle film 12 so that the pellicle film 12 has air permeability. Here, the diameter of the hole 14 is not particularly limited, but is preferably 1 μm or less in order to prevent intrusion of dust and the like. Further, the place where the hole 14 is provided is preferably a place which does not affect the pattern transfer.
【0010】以上のように、ペリクル膜12が通気性を
有するので、ペリクル外部の気圧の変動によるペリクル
膜12の形状変化はない。As described above, since the pellicle film 12 has air permeability, there is no change in the shape of the pellicle film 12 due to fluctuations in atmospheric pressure outside the pellicle.
【0011】尚、上記実施例において、ペリクル外部か
らの塵埃等の侵入を防ぐために、さらにフィルターをペ
リクル膜の下部に接するように設けてもよい。In the above embodiment, a filter may be further provided in contact with the lower part of the pellicle film in order to prevent dust and the like from entering from the outside of the pellicle.
【0012】また、上記実施例では角形フレームを用い
たが、これに限るものではなく、円形等その他の形状で
もよい。Further, although the rectangular frame is used in the above embodiment, the invention is not limited to this, and it may have a circular shape or another shape.
【0013】さらに、上記実施例ではペリクル膜に孔を
設けたが、ペリクル膜自体を通気性の材料で作製しても
同様の効果が得られる。Further, although the pellicle film is provided with holes in the above embodiment, the same effect can be obtained even if the pellicle film itself is made of a gas permeable material.
【0014】[0014]
【発明の効果】本発明では、ペリクル膜が通気性を有す
るため、ペリクル外部の気圧の変動によるペリクル膜の
形状変化を防止し、信頼性の高いマスク保護用ペリクル
を提供することができる。According to the present invention, since the pellicle film has air permeability, it is possible to prevent the shape change of the pellicle film due to the fluctuation of the atmospheric pressure outside the pellicle, and to provide a highly reliable mask protecting pellicle.
【図1】本発明の実施例のマスク保護用ペリクルを模式
的に示した斜視図である。FIG. 1 is a perspective view schematically showing a mask protecting pellicle according to an embodiment of the present invention.
【図2】従来例を模式的に示した斜視図である。FIG. 2 is a perspective view schematically showing a conventional example.
12………ペリクル膜 12 ... Pellicle membrane
Claims (1)
とするマスク保護用ペリクル。1. A pellicle for mask protection, wherein the pellicle film has air permeability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6194993A JPH06273921A (en) | 1993-03-22 | 1993-03-22 | Mask protecting pellicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6194993A JPH06273921A (en) | 1993-03-22 | 1993-03-22 | Mask protecting pellicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06273921A true JPH06273921A (en) | 1994-09-30 |
Family
ID=13185963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6194993A Withdrawn JPH06273921A (en) | 1993-03-22 | 1993-03-22 | Mask protecting pellicle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06273921A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110097691A (en) * | 2010-02-23 | 2011-08-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for manufacturing pellicle and pellicle film for lithography |
-
1993
- 1993-03-22 JP JP6194993A patent/JPH06273921A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110097691A (en) * | 2010-02-23 | 2011-08-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for manufacturing pellicle and pellicle film for lithography |
| JP2011175001A (en) * | 2010-02-23 | 2011-09-08 | Shin-Etsu Chemical Co Ltd | Pellicle for lithography and method for producing pellicle film |
| TWI470343B (en) * | 2010-02-23 | 2015-01-21 | 信越化學工業股份有限公司 | Production method of photomask mask film and mask for dust film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000530 |