JPH06283659A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] The present invention reduces the thickness of the entire apparatus and
The purpose is to prevent the bonding wire 6 for the lead 4 from contacting the bus bar 3 and improve the reliability. [Structure] The leads 4 are superposed on the bus bar 3 via an insulating film, the bus bar 3 and the leads 4 are integrated, and the bonding wires 5 and 6 are connected at the shortest distance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
LOC (Lead o) for high density mounting of LSI
The present invention relates to a semiconductor device having an (n Chip) structure.

[0002]

2. Description of the Related Art FIG. 6 is a plan view showing an example of a conventional semiconductor device, and FIG. 7 is a sectional view taken along the line VII-VII of FIG.
In the figure, 1 is a semiconductor chip (LSI chip), 2 is a plurality of pads provided on the semiconductor chip 1, and 3 are parallel to each other and are arranged on the semiconductor chip 1 at intervals.
Busbars of a book, these busbars 3 acting as common electrodes. 4 is a bus bar 3 in the same plane as the bus bar 3
A plurality of leads arranged in a direction orthogonal to
Reference numerals 5 and 6 are bonding wires (gold wires) that connect the pad 2 to the bus bar 3 and the leads 4, respectively. Illustration of the sealing material such as resin is omitted.

In the conventional semiconductor device having the LOC structure as described above, the bus bar 3 arranged on the semiconductor chip 1 is used.
The lead 4 and the lead 4 are integrated at their ends, and the required pad 2 and the corresponding bus bar 3 or lead 5 are connected by the bonding wires 5 and 6. Usually, the bus bar 3 is used for a power supply line and a ground line, and the semiconductor chip 1 is freely supplied with a power supply and a ground at any place. Therefore, the two bus bars 3 are arranged on the same surface as the signal line leads 4.

[0004]

In the conventional semiconductor device constructed as described above, the bonding wire 6 connecting the pad 2 and the lead 4 extends in a large arc beyond the bus bar 3. However, there is a problem that the bonding wire 6 hinders the thinning of the entire apparatus and there is a risk that the bonding wire 6 contacts the bus bar 3.

The present invention has been made to solve the above problems, and it is possible to reduce the thickness of the entire device, and the bonding wires connected to the leads come into contact with the bus bar. It is an object of the present invention to obtain a semiconductor device which can prevent the occurrence of damage and improve reliability.

[0006]

According to another aspect of the present invention, there is provided a semiconductor device in which a lead and a bus bar are superposed on each other with an insulator interposed therebetween.

In the semiconductor device according to the second aspect of the present invention, the area other than the wire bond region of the bus bar is covered with an insulator, and the lead is superposed on the bus bar.

A semiconductor device according to a third aspect of the present invention is such that a bus bar is superposed on a semiconductor chip via an insulator, and leads are further superposed on the bus bar via an insulator.

[0009]

According to the first aspect of the invention, since the bus bar and the lead are overlapped with each other, wire bonding to the lead can be performed without the influence of the bus bar.

According to the second aspect of the present invention, by covering the area other than the wire bond region of the bus bar with an insulator, it is possible to more reliably prevent the bonding wire connected to the lead from being electrically connected to the bus bar.

In the third aspect of the invention, the entire device is thinned by bonding the bus bar onto the semiconductor chip.

[0012]

Embodiments of the present invention will be described below with reference to the drawings. Example 1. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line II-II of FIG. 1, and FIG. 3 is a sectional view taken along line III-III of FIG. is there. In the figure, the lead 4 is laid on the bus bar 3 with the insulator film 11 interposed therebetween. The leads 4 are arranged in the direction orthogonal to the bus bar 3 as in the conventional case. Other configurations are similar to those of the conventional example.

In such a semiconductor device, the bus bar 3 and the lead 4 arranged on the semiconductor chip 1 are made of the insulating film 1.
Since the leads 4 are integrated by 1 and the bus bar 3 overlaps the bus bar 3, the wire can be freely connected to the bus bar 3 and the leads 4 at the shortest distance without interfering with each other's bonding. it can. Therefore, the bonding wire 6 for the lead 4 does not draw an arc larger than necessary, the entire device is thinned, and the bonding wire 6 is prevented from coming into contact with the bus bar 3.

Further, since the bus bar 3 and the lead 4 are integrated, the mechanical strength of the bus bar 3 and the lead 4 is increased, and the workability during bonding is significantly improved.

In the first embodiment, the insulating film 11 is sandwiched only in the overlapping region of the bus bar 3 and the lead 4 to electrically insulate the bus bar 3 and the lead 4. However, the entire back surface of the lead 4 is covered with the insulating material. This may keep the insulation from the bus bar 3, and in this case, it is not necessary to consider the insulation of the bus bar 3.

Further, by covering the entire upper surface of the bus bar 3 with an insulator, it is possible to maintain electrical insulation from the leads 4. In this case, it is necessary to make a hole for electrical connection by etching or the like at a position where the bonding wire 5 needs to be connected to the bus bar 3. The insulation treatment on the lead 4 side is not always necessary.

Example 2. Next, FIG. 4 is a plan view showing a semiconductor device according to an embodiment of the invention of claims 2 and 3,
FIG. 5 is a sectional view taken along the line VV of FIG. In the figure, the bus bar 3 is covered with the insulating film 11 except for the wire bond regions 3 a, and is overlaid on the semiconductor chip 1. That is, the bus bar 3 of the second embodiment is used as a spacer between the semiconductor chip 1 and the lead 4.

In such a semiconductor device, since the entire bus bar 3 is covered with the insulating film 11, the bonding wire 6 for the lead 4 is more reliably prevented from being electrically connected to the bus bar 3. In addition, the insulation between the bus bar 3 and the leads 4 is more surely maintained, and the reliability is improved. Further, since the bus bar 3 is overlaid on the semiconductor chip 1, the whole device can be made thinner.

In order to have a structure in which the bus bar 3 is superposed on the semiconductor chip 1, the bus bar 3 and the semiconductor chip 1 are required.
It is only necessary to provide an insulator between the bus bar 3 and the lead 4 and between the bus bar 3 and the lead 4, and it is not always necessary to cover the entire bus bar 3 with the insulator.

Although the bus bar 3 is arranged below the lead 4 in each of the above-mentioned embodiments, the bus bar 3 may be arranged above the lead 4 in some cases.

[0021]

As described above, in the semiconductor device according to the invention of claim 1, since the lead and the bus bar are superposed on each other with the insulator interposed therebetween, the whole device can be made thin and the lead can be thinned. It is possible to prevent the bonding wire connected to the bus bar from coming into contact with the bus bar, and it is possible to improve reliability. Also,
By integrating the bus bar and the lead, the mechanical strength of the bus bar and the lead is enhanced, and efficient and stable wire bonding can be performed, and the quality can be improved.

In the semiconductor device of the invention of claim 2, since the area other than the wire bond region of the bus bar is covered with the insulator and the lead is overlapped on this bus bar, in addition to the same effect as the invention of claim 1, The insulation between the bonding wire for the lead and the bus bar and the insulation between the bus bar and the lead can be more reliably maintained, and the reliability can be further improved.

According to the semiconductor device of the third aspect of the present invention, the bus bar is superposed on the semiconductor chip via the insulator, and the leads are superposed on the bus bar via the insulator.
In addition to the same effect as that of the invention of claim 1, there is an effect that the entire device can be further thinned.

[Brief description of drawings]

FIG. 1 is a plan view showing a semiconductor device according to an embodiment of the claimed invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a sectional view taken along the line III-III in FIG.

FIG. 4 is a plan view showing a semiconductor device according to an embodiment of the invention of claims 2 and 3;

5 is a cross-sectional view taken along the line VV of FIG.

FIG. 6 is a plan view showing an example of a conventional semiconductor device.

7 is a sectional view taken along the line VII-VII in FIG.

[Explanation of symbols]

 1 Semiconductor Chip 2 Pad 3 Bus Bar 3a Wire Bond Area 4 Lead 5 Bonding Wire 6 Bonding Wire 11 Insulator Film (Insulator)

Claims (3)

[Claims] 1. A semiconductor chip having a plurality of pads,
Busbars arranged at intervals on the semiconductor chip; leads overlapping the busbars via an insulator and extending in a direction intersecting the busbars; the pads, the busbars, and the leads; A semiconductor device comprising: bonding wires connecting to each other. 2. A semiconductor chip having a plurality of pads,
Busbars, which are covered with an insulator except for the wire bond region and are arranged at intervals on the semiconductor chip, and leads which are overlapped with the busbar and extend in a direction intersecting with the busbar, A semiconductor device comprising: a bonding wire connecting the pad, the bus bar, and the lead. 3. A semiconductor chip having a plurality of pads,
A bus bar stacked on the semiconductor chip via an insulator, a lead stacked on the bus bar via an insulator and extending in a direction intersecting the bus bar, the pad, the bus bar, and A semiconductor device, comprising: a bonding wire connecting to the lead.