JPH0636326B2 - Heat resistant black electrode - Google Patents
Heat resistant black electrodeInfo
- Publication number
- JPH0636326B2 JPH0636326B2 JP12657589A JP12657589A JPH0636326B2 JP H0636326 B2 JPH0636326 B2 JP H0636326B2 JP 12657589 A JP12657589 A JP 12657589A JP 12657589 A JP12657589 A JP 12657589A JP H0636326 B2 JPH0636326 B2 JP H0636326B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- black
- electrode
- heat
- black electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は螢光表示管(以下、VFDと略称する)の配線電
極や薄膜EL表示素子の背面電極などに用いて好適な耐
熱性黒色電極に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention is a heat-resistant black electrode suitable for use as a wiring electrode of a fluorescent display tube (hereinafter abbreviated as VFD) or a back electrode of a thin film EL display element. It is about.
一般に電気の良導体であるAlは、薄膜EL表示素子の
背面電極やVFDの配線および電極材料として広く用い
られている。しかし、Al電極の表面は光の反射率が約
90%と極めて高いので、これを用いた上記表示素子に
おいては、表示面に外光の反射によるギラツキを生じ易
いという欠点がある。このAl電極の光学的欠点を改善
するものとして黒色電極が知られており、その材料とし
てはC,AsSs,SiGeもしくはAl,In,Cr,Mn,
Moなどの酸化物が提案されている。Generally, Al, which is a good conductor of electricity, is widely used as a back electrode of a thin film EL display element, VFD wiring, and an electrode material. However, since the surface of the Al electrode has a very high light reflectance of about 90%, the display element using the Al electrode has a drawback that glare is likely to occur on the display surface due to reflection of external light. A black electrode is known to improve the optical defect of the Al electrode, and its material is C, AsSs, SiGe or Al, In, Cr, Mn,
Oxides such as Mo have been proposed.
しかしながら、これらの黒色材量とAl電極とを積層し
た黒色電極は、付着力が弱く、また耐熱性に乏しい。し
かもエツチングによるパターニングが難かしく、製造工
程が繁雑となるなどの問題があつた。However, the black electrode in which the amount of the black material and the Al electrode are laminated has weak adhesion and poor heat resistance. Moreover, patterning by etching is difficult and the manufacturing process becomes complicated.
このような問題を改善したものとしては、本発明者らは
特開昭63-241846号公報においてVFDの熱処理工程に耐え
得る耐熱性を有しかつパターニング性に優れた耐熱性黒
色材料とAl電極との2層構造からなる黒色電極を提案
した。As a solution to such a problem, the present inventors have disclosed in JP-A-63-241846 that a heat-resistant black material and an Al electrode having heat resistance capable of withstanding the heat treatment step of VFD and excellent in patterning property. And a black electrode having a two-layer structure.
しかしながら、この2層構造の耐熱性黒色電極では、第
4図に示すようにその分光反射特性は極めて大きなうね
りを有し、このために若干青みがかつた着色や若干ピン
クがかつた着色を生じ易かつた(真の黒色電極では分光
反射率はフラツトな直線となる。)また、人間の視感度
の高い550nm付近での反射率を約10%以下とするため
には、この2層構造の黒色電極では成膜直後と熱処理後
との間での反射率の変化が極めて大きいため、成膜工程
およびそれに続く熱処理工程において極めて厳密な工程
管理が要求されるという問題があつた。However, in this heat-resistant black electrode having a two-layer structure, as shown in FIG. 4, its spectral reflection characteristic has an extremely large undulation, which causes a slight bluish coloring or a slight pink coloring. It is easy (the spectral reflectance of a true black electrode is a flat line). In addition, in order to reduce the reflectance at around 550 nm, where human visibility is high, to about 10% or less, this two-layer structure is used. In the black electrode, there is a problem that extremely strict process control is required in the film formation process and the subsequent heat treatment process because the change in reflectance between the film formation and the heat treatment is extremely large.
本発明は、前述した従来の課題に鑑み、表示素子、特に
螢光体の電子励起面の反対側(基板側)から表示を観察
するタイプのVFDにおける表示面のギラツキを大幅に
低減し、さらにその表示品位を向上させるためになされ
たものであり、VFDなどの製造工程における熱処理に
耐え得る高い耐熱性を有し、かつパターニング性が良好
でより黒色度の高い耐熱性黒色電極を提供することを目
的としている。In view of the above-mentioned conventional problems, the present invention significantly reduces the glare on the display surface in a display element, particularly a VFD of the type in which the display is observed from the side opposite to the electron excitation surface of the phosphor (substrate side), and The present invention has been made in order to improve the display quality, and provides a heat-resistant black electrode having high heat resistance that can withstand heat treatment in a manufacturing process such as VFD, good patterning property, and higher blackness. It is an object.
本発明による耐熱性黒色電極は、透光性絶縁基板上に、
耐熱性金属の中にAlおよびMoの酸化物のうち少なく
とも1つを含んだ黒色薄膜もしくは耐熱性金属の酸化物
の中にAl,Moおよびそれらの酸化物のうち少なくと
も1つを含む黒色薄膜を形成し、その上に上記黒色薄膜
より酸化の程度が低い黒色薄膜(中間黒色薄膜)もしく
はMo薄膜(中間Mo薄膜)を配置し、さらにその上に
Al薄膜を積層形成して3層薄膜から構成するものであ
る。The heat-resistant black electrode according to the present invention, on a translucent insulating substrate,
A black thin film containing at least one of Al and Mo oxides in a heat resistant metal or a black thin film containing at least one of Al, Mo and those oxides in a heat resistant metal oxide. A black thin film (intermediate black thin film) or a Mo thin film (intermediate Mo thin film) having a lower degree of oxidation than the above black thin film is formed thereon, and an Al thin film is further laminated thereon to form a three-layer thin film. To do.
このとき、上記耐熱性金属およびその酸化物は、Ti,
Cr,Mn,Zr,Mo,Wおよびそれらの酸化物のう
ち少なくとも1つを主たる構成材料として用いる。At this time, the refractory metal and its oxide are Ti,
At least one of Cr, Mn, Zr, Mo, W and oxides thereof is used as a main constituent material.
本発明における耐熱性黒色電極においては、黒色度が高
く、各薄膜間および透光性絶縁基板との付着力に優れ、
VFDなどの表示素子の熱処理工程(空気中約580
℃)に耐え得る耐熱性を有し、しかも従来と同じAのエ
ツチヤントで良好なパターニングを行なうことができ
る。In the heat-resistant black electrode in the present invention, the degree of blackness is high, and the adhesion between each thin film and the translucent insulating substrate is excellent,
Heat treatment process for display elements such as VFD (approx. 580 in air)
It has heat resistance capable of withstanding the temperature (° C.), and good patterning can be performed with the same etchant A as the conventional one.
以下、図面を用いて本発明の実施例を詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
実施例1 第1図は本発明による耐熱性黒色電極の一実施例を示す
主要断面図であり、ここでは基板側から発光を観察する
タイプのVFD用ガラス基板上に本発明による耐熱性黒
色電極を作製した場合を示している。すなわち、この実
施例では、黒色薄膜および中間黒色薄膜のスパツタリン
グターゲツトとして第2図(a),(b)に示すようなMo板
1にAl酸化物小片2を面積比で約40%埋め込んだ複
合ターゲツト3を用い、上記VFD用ガラス基盤11上
にArガスを用いて通常のスパツタ法にて膜厚約500
ÅのAl2O3:Moの黒色薄膜12を形成する。引き
続きこの黒色薄膜12上に、上記複合ターゲツト3より
も若干Al酸化物の含有量が少ない複合ターゲツトを用
いて上記同様の条件によるスパツタ法にて膜厚約800
Åの中間黒色薄膜13上に、Al板をターゲツトとして
同様にArガスを用いてスパツタ法にて膜厚約1.5μm
のAl薄膜14を積層形成してこれらの3層薄膜からな
る黒色電極15を作製した。しかる後、この黒色電極1
5を形成したガラス基板11を従来と同様のVFDの製
造工程に流してVFDを製造したところ、上記黒色電極
15の分光反射率は380〜780nmの可視光域においてほぼ
10%以下であり、かつ人間の視感度の高い550nm付近
での値は5〜6%と低く(第3図参照)、本発明者らが
提案した従来の2層構造よりも黒色度の高い電極が得ら
れた。また、このように構成された黒色電極15は、従
来の2層構造の黒色電極15よりも優れた耐熱性(成膜
直後と熱処理後との間での反射率の変化が小さい)と良
好なパターニング性とを有しており、熱処理工程での電
極の白色化,剥れ,導通不良、エツチング不良などの発
生は全く認められなかつた。Example 1 FIG. 1 is a main cross-sectional view showing an example of a heat-resistant black electrode according to the present invention. Here, a heat-resistant black electrode according to the present invention is placed on a glass substrate for VFD of a type in which light emission is observed from the substrate side. It shows a case where is manufactured. That is, in this embodiment, as a sputtering target of the black thin film and the intermediate black thin film, the Al oxide small piece 2 is embedded in the Mo plate 1 as shown in FIGS. 2 (a) and 2 (b) in an area ratio of about 40%. The composite target 3 is used, and a film thickness of about 500 is formed on the glass substrate 11 for VFD by Ar gas using an ordinary sputtering method.
A black thin film 12 of Al 2 O 3 : Mo of Å is formed. Subsequently, a composite target having an Al oxide content slightly smaller than that of the composite target 3 is used on the black thin film 12 by a sputtering method under the same conditions as described above to obtain a film thickness of about 800.
On the intermediate black thin film 13 of Å, an Al plate was used as a target and Ar gas was used in the same manner by a sputtering method to obtain a film thickness of about 1.5 μm.
Al thin films 14 were laminated to form a black electrode 15 composed of these three-layer thin films. Then, this black electrode 1
When the VFD was manufactured by flowing the glass substrate 11 on which 5 was formed into a VFD manufacturing process similar to the conventional one, the spectral reflectance of the black electrode 15 was about 10% or less in the visible light range of 380 to 780 nm, and The value in the vicinity of 550 nm, where human visibility is high, is as low as 5 to 6% (see FIG. 3), and an electrode having higher blackness than the conventional two-layer structure proposed by the present inventors was obtained. In addition, the black electrode 15 configured in this manner has excellent heat resistance (small change in reflectance between immediately after film formation and after heat treatment) and good performance as compared with the conventional black electrode 15 having a two-layer structure. It has a patterning property, and no whitening, peeling, conduction failure, etching failure, etc. of the electrode were observed in the heat treatment process.
実施例2 本実施例では、中間層としてMo薄膜を用いた3層構造
の黒色電極の作製を行なつた。まず、実施例1と同様に
ガラス基板11上に膜厚約500ÅのAl2O3:Mo黒色薄膜1
2を形成し、引き続きこの黒色薄膜12上に、中間層と
してMo板をターゲツトをArガスでスパツタを行なつ
て膜厚約1000ÅのMoの薄膜を堆積し、さらこのMo薄膜
上に、膜厚1.5μmのAl薄膜14を積層形成して黒色
電極を作製した。このように構成された黒色電極を従来
と同様の燐酸系Alエツチヤントにてパターニングを行
なつたところ、膜の剥れや電極パターンの乱れなどの発
生がなく、分光反射率は実施例1の場合と同様に380〜7
80nmの可視光域においてほぼ10%以下であり、かつ人
間の視感度の高い550nm付近での値は約5%程度(第3
図参照)であつた。Example 2 In this example, a black electrode having a three-layer structure using a Mo thin film as an intermediate layer was manufactured. First, as in Example 1, the Al 2 O 3 : Mo black thin film 1 having a film thickness of about 500Å was formed on the glass substrate 11.
2 is formed on the black thin film 12, and a Mo plate as an intermediate layer is sputtered with a target of Ar gas to deposit a thin film of Mo having a thickness of about 1000Å. A 1.5 μm Al thin film 14 was laminated to form a black electrode. When the black electrode thus constructed was patterned using a phosphoric acid-based Al etchant similar to the conventional one, no peeling of the film or disturbance of the electrode pattern occurred, and the spectral reflectance was the same as in Example 1. Same as 380 ~ 7
The value is approximately 10% or less in the visible light region of 80 nm, and the value is around 5% at around 550 nm where human visibility is high (3rd
(See the figure).
実施例3 本実施例では、黒色薄膜の形成にスパツタリングターゲ
ツトとしてAl板にMo酸化物を埋め込んで複合ターゲ
ツトを用いた。まず、ガラス基板11上に膜厚約500Å
のMoOx:Al黒色薄膜を形成した。このとき、複合ター
ゲツト表面のMo酸化物の占有面積は約50%であり、
スパツタガスにはArガスを用いた。次にこの黒色薄膜
上に膜厚約1000Åの中間Mo薄膜を、さらにこの中間M
o薄膜上に、膜厚約1.5μのAl薄膜14をそれぞれの
スパツタ法にて堆積して黒色電極を作製した。このよう
に構成された黒色電極においても上述した実施例1,実
施例2の場合と同様に高い黒色度,耐熱性および良好な
パターニング性が得られた。Example 3 In this example, a composite target in which Mo oxide was embedded in an Al plate was used as a sputtering target for forming a black thin film. First, the film thickness is about 500Å on the glass substrate 11.
MoOx: Al black thin film was formed. At this time, the occupied area of Mo oxide on the surface of the composite target is about 50%,
Ar gas was used as the sputtering gas. Next, on this black thin film, an intermediate Mo thin film with a film thickness of about 1000Å,
On the thin film, an Al thin film 14 having a thickness of about 1.5 μm was deposited by each sputtering method to produce a black electrode. Also in the black electrode thus configured, high blackness, heat resistance and good patterning property were obtained as in the case of Examples 1 and 2 described above.
なお、発明者らの実験によれば、本発明に用いる黒色薄
膜および中間黒色薄膜は、複合ターゲツトに、Al,A
l酸化物,MoおよびMo酸化物のうち少なくとも1つ
を含ませることにより、燐酸エツチヤントでのエツチン
グが可能であり、またMo中間層も上記エツチヤントで
エツチングできるため、従来のパターニング工程を変更
する必要がなく、さらにTi,Cr,Mn,Zr,M
o,W,Siおよびこれらの酸化物のうち少なくとも1
つを含ませることにより、耐熱性の優れた黒色電極が作
製できた。According to the experiments conducted by the inventors, the black thin film and the intermediate black thin film used in the present invention have Al, A and A in the composite target.
It is possible to etch with a phosphoric acid etchant by including at least one of 1 oxide, Mo and Mo oxide, and the Mo intermediate layer can also be etched with the above etchant. Therefore, it is necessary to change the conventional patterning process. No Ti, Cr, Mn, Zr, M
o, W, Si and at least one of these oxides
By including one of them, a black electrode having excellent heat resistance could be manufactured.
以上説明したように本発明によれば、従来の2層構造の
耐熱性黒色電極と比べてVFDなどの表示素子の製造工
程の熱処理に耐え得る耐熱性の高い、しかもパターニン
グ性に優れたより黒色度の高い黒色電極が得られる。し
たがつて本発明による黒色電極を配線材料に用いること
により、表示品位の極めて優れた螢光体の電子励起面の
反対側から見るタイプのVFDを安価に提供することが
できるとともに上記VFD以外の他の表示素子、例えば
薄膜EL表示素子の背面電極に用いた場合にも同様の効
果を得ることができる。As described above, according to the present invention, as compared with the conventional heat-resistant black electrode having a two-layer structure, the heat resistance in the manufacturing process of the display element such as VFD is high and the blackness is excellent in the patterning property. It is possible to obtain a black electrode with high efficiency. Therefore, by using the black electrode according to the present invention as a wiring material, it is possible to inexpensively provide a VFD of a type viewed from the side opposite to the electron excitation surface of the phosphor having an extremely excellent display quality, and at the same time other than the above VFD. Similar effects can be obtained when used as a back electrode of another display element, for example, a thin film EL display element.
第1図は本発明による黒色電極の一実施例を示す主要断
面図、第2図(a),(b)は上記実施例において用いられる
複合ターゲツトの一例を示す平面図,そのB−B′線の
断面図、第3図は本発明による黒色電極の分光反射特性
の代表例を示す図、、第4図は従来の2層構造の耐熱性
黒色電極の分光反射率の一例を示す図である。 1……Mo板、2……Al酸化物、3……複合ターゲツ
ト、11……ガラス基板、12……黒色薄膜、13……
中間黒色薄膜、14……Al薄膜、15……黒色電極。FIG. 1 is a main sectional view showing an embodiment of a black electrode according to the present invention, FIGS. 2 (a) and 2 (b) are plan views showing an example of a composite target used in the above embodiment, and BB 'thereof. FIG. 3 is a diagram showing a typical example of the spectral reflection characteristics of the black electrode according to the present invention, and FIG. 4 is a diagram showing an example of the spectral reflectance of the conventional heat-resistant black electrode having a two-layer structure. is there. 1 ... Mo plate, 2 ... Al oxide, 3 ... composite target, 11 ... glass substrate, 12 ... black thin film, 13 ...
Intermediate black thin film, 14 ... Al thin film, 15 ... black electrode.
Claims (1)
lおよびMoの酸化物のうち少なくとも1つを含んだ黒
色薄膜もしくは耐熱性金属の酸化物の中にAl,Moお
よびそれらの酸化物のうち少なくとも1つを含む黒色薄
膜を形成したうえ、この黒色薄膜上にこの黒色薄膜より
も酸化の程度が低い中間黒色薄膜もしくは中間Mo薄膜
を堆積し、さらにこの中間黒色薄膜もしくは中間Mo薄
膜上にAl薄膜を積層してこれら3層薄膜から構成して
なることを特徴とした耐熱性黒色電極。1. A heat-resistant metal in a transparent insulating substrate
a black thin film containing at least one of the oxides of 1 and Mo or a black thin film containing at least one of Al, Mo and those oxides in a heat-resistant metal oxide An intermediate black thin film or an intermediate Mo thin film having a degree of oxidation lower than that of the black thin film is deposited on the thin film, and an Al thin film is further laminated on the intermediate black thin film or the intermediate Mo thin film to form a three-layer thin film. A heat-resistant black electrode characterized by that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12657589A JPH0636326B2 (en) | 1989-05-22 | 1989-05-22 | Heat resistant black electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12657589A JPH0636326B2 (en) | 1989-05-22 | 1989-05-22 | Heat resistant black electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02306505A JPH02306505A (en) | 1990-12-19 |
| JPH0636326B2 true JPH0636326B2 (en) | 1994-05-11 |
Family
ID=14938562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12657589A Expired - Fee Related JPH0636326B2 (en) | 1989-05-22 | 1989-05-22 | Heat resistant black electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0636326B2 (en) |
-
1989
- 1989-05-22 JP JP12657589A patent/JPH0636326B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02306505A (en) | 1990-12-19 |
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| LAPS | Cancellation because of no payment of annual fees |