JPH0637152A - Method of manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

(57) [Abstract] [Purpose] In a semiconductor device mounted by TAB, corrosion caused by defective plating of a lead surface near a reinforcing member adhered for the purpose of reinforcing a lead is prevented, and a cross-sectional area is reduced. (EN) A method of manufacturing a semiconductor device capable of preventing a lead disconnection accident that tends to occur. [Structure] Lead group 20 on a single layer tape 1 made of copper foil
Is formed by a photolithography method, and then plating is performed to form a plating layer on the entire surface of each lead 21. afterwards,
The reinforcing member 3 is bonded, the leads 21 are reinforced, and the semiconductor chip 30 is bonded.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which leads are connected by tape bonding, and more particularly to a lead plating process and a reinforcement process using a lead reinforcing member.

[0002]

2. Description of the Related Art Tape bonding (TAB) is a technique for mounting semiconductor chips, which is excellent in mass productivity, and is a technique that can be applied to electrodes of semiconductor chips, which are becoming more and more miniaturized in recent years. Has been adopted.

FIGS. 13 and 14 show a method of manufacturing a film carrier used for this tape bonding and a method of mounting it on the film carrier. As the film carrier 10 on which the adhesive layer 15 is formed, in general, polyimide having excellent heat resistance and insulating properties is often used. First, as shown in FIG. 13A, such a semiconductor device has a sprocket hole 11 for driving a carrier, a device hole 12 for mounting an IC chip, and a slit hole for cutting formed leads. 1
3 is formed on the base film 10 made of polyimide. Then, as shown in FIG. 13B, a thin copper foil 16 is attached onto the adhesive layer 15 formed on the surface of the film 10. Next, the device hole 12 and the slit hole 1
After forming a resist layer on the back surface side of the film 10 on the 3 side, the copper foil 16 is processed from the front surface side on the opposite side by a photolithography method to form a plurality of leads,
The resist layer is removed. Therefore, the lead group 20 including a plurality of leads 21a to 21l as shown in FIG.
Can be formed around each device hole 12. Each of the leads 21 is an inner lead (finger) 22 connected to the electrode of the semiconductor chip facing the inside of the device hole 12, and an outer side of the inner lead 22 with respect to the device hole 12, and connected to the wiring on the substrate. Outer leads 23.

FIG. 14 shows the lead 21 produced as described above.
The process of plating and mounting the IC chip 30 is shown. In this figure, description will be given based on the cross section XX in FIG. As shown in FIG. 14A, one end of the outer lead 23 of the lead 21 formed in FIG. 13 is supported by the base film 10. further,
These leads 21 are supported by a reinforcing member 17 formed by the device hole 12 and the slit hole 13 at a substantially intermediate point 24 of the lead 21, which is a boundary between the outer lead 23 and the inner lead 22. The reinforcing member 17 has a function of preventing flapping and bending of the individual leads 21.

The lead 21 formed on the surface of the base film 10 is provided with 2 as shown in FIG.
Apply color plating. In this example, the inner leads 22 are plated with gold 41 using Ni as a barrier metal in order to connect to gold bumps 41 of the IC chip 30 described later. On the other hand, solder plating 42 is applied to the outer leads 23 in order to connect to the wiring on the substrate. Then, the IC chip 30 is attached to the plated lead 21 from the device hole 12 as shown in FIG. Thereafter, in order to protect the connection between the leads 21 and the bumps 31, a molding material 32 is injected, and the outer leads 23 are cut from the slit holes 13, whereby a semiconductor device in which the leads are mounted on the IC chip 30 can be manufactured. .

[0006]

Since the leads produced as described above are prevented from fluttering, bending, etc. by the reinforcing member, gang bonding can be performed easily and at the same time, the occurrence of defective bonding can be suppressed. It is possible. However, as shown in FIG. 11, since the plating in the vicinity of the joint between the reinforcing member and the lead is incomplete, the lead may be corroded. FIG. 15 is an enlarged view showing a joint between the lead and the reinforcing member of the semiconductor device manufactured as described above. As described above, the leads 21 are plated while being formed on the base film 10. Therefore, it is difficult to secure the plating thickness at the boundary with the base film 10.

Furthermore, the problem that the surface of the reinforcing member 17 formed of the base film 10 adhered to the leads 21 is not plated, and also in the joint portion 18 between the reinforcing member 17 and the leads 21, Gold-plated 41
There is also a problem that it is difficult to secure the thickness of the.
Even if the molding material 32 is injected by using the reinforcing member 17 as a mold so as to cover the non-plated portion and the portion where the thickness of the plating is secured, the moisture reaches the lead through the route shown by the arrow 19. There are many. Further, unlike the outer lead 23, the solder does not reflow at the joint portion 18 of the inner lead 23 during mounting on the substrate and does not fill the gap. Further, it is impossible to plate the surface where the reinforcing material 17 is bonded to the leads 21. Therefore, in the semiconductor device using the tape carrier method, the joint portion between the lead and the reinforcing member is one of the portions most susceptible to corrosion.

In the conventional semiconductor device, the thickness of the lead is secured to about 40 μm, and such corrosion often does not cause a problem. However, in recent years
Since the thickness of the lead has been reduced along with the miniaturization of the electrodes provided in the semiconductor device, a problem such as a disconnection due to corrosion can be considered. Therefore, there is an urgent need to take measures against such defects.

In view of the above problems, the present invention realizes a method of manufacturing a semiconductor device capable of performing plating with a uniform thickness over the entire lead while suppressing the flapping of the lead. Especially.

[0010]

In order to solve the above problems, in the present invention, a reinforcing member different from the film carrier is used, and the lead is plated before the bonding of the reinforcing member. . That is, in the method for manufacturing a semiconductor device in which the electrodes of the semiconductor chip are gang-bonded to the tape-shaped film carrier on which the lead group composed of a plurality of conductor leads according to the present invention is repeatedly formed, the conductor is formed before the gang-bonding. It is characterized by including a plating step of plating the manufactured leads and a reinforcing step of adhering a reinforcing member across at least two or more plated conductive leads of the lead group.

Therefore, it is not necessary to use a double-layer tape as the film carrier, but a single-layer tape made of a thin film conductor can be used. Further, as the plating step, an inner plating metal for plating the inner portion of the conductor lead in contact with the electrode of the semiconductor chip and an outer plating metal for plating the outer portion of the conductor lead extending from the inner portion to the outside of the semiconductor chip. You may use the two-color plating process which can be selected independently. In this case, when gold is used as the inner plating metal, the outer plating metal can be a metal selected from the group consisting of solder, tin, gold, and an alloy of tin and lead as the alloy, and the inner plating can be tin,
When gold is used, tin can be used as the outer plating metal. Furthermore, it is also possible to adopt a lead with a connecting protrusion having a connecting protrusion as the conductor lead.

In the semiconductor device manufactured by such a manufacturing method, a lead group including a plurality of conductor leads, a semiconductor chip gang-bonded to the conductor leads, and at least two or more conductor leads are provided. A semiconductor device having a reinforcing member adhered thereto, wherein the reinforcing member is an anticorrosive reinforcing member adhered onto a plating layer formed on a conductor lead.

[0013]

As described above, in the manufacturing method according to the present invention, since the plating step is performed prior to the reinforcing step of bonding the reinforcing member, the conductor lead is plated without the reinforcing member being bonded. . Therefore, plating is performed in the same state as the surface of the surrounding conductor lead at the joint portion with the reinforcing member, and a uniform plating layer is formed on the entire surface of the conductor lead. As described above, in the semiconductor device manufactured by the manufacturing method according to the present invention, the plating layer having a thickness necessary for the joint portion between the reinforcing member and the conductive lead, including the surface of the conductive lead to which the reinforcing member is bonded, is formed. Are formed.
Therefore, the anticorrosion treatment is applied to the entire conductor lead. Therefore, in the manufacturing method of this embodiment, the reinforcing member is bonded to such a conductor lead to prevent fluttering, bending, etc., and perform bonding. Therefore, by the manufacturing method according to the present invention,
It is possible to realize a highly reliable semiconductor device in which there are few problems such as poor connection and few breakage of conductor leads due to corrosion.

Further, since the reinforcing member may be adhered after the plating process, it is possible to use a single layer tape as the film carrier. Therefore, an expensive heat-resistant thin film such as polyimide is not required, and a conductive lead to which a reinforcing member is bonded can be realized by using an inexpensive film carrier made of a single thin-film conductor such as copper foil. Further, as the plating process, it is also possible to adopt two-color plating in which gold plating or the like having good bonding property to the electrode material of the semiconductor chip is applied to the inner lead, and solder plating used for wiring of the board is applied to the outer lead. It's easy.

[0015]

Embodiments of the present invention will be described below with reference to the drawings.

Example 1 FIGS. 1 and 2 show Example 1
9 shows a method of manufacturing a semiconductor device using the tape carrier method (TAB) as a mounting method. The process shown in FIG. 1 is a process of forming leads on a carrier film and gang-bonding a semiconductor chip to the formed leads. First, as shown in FIG. 1A, in the manufacturing method of this example, a carrier film having a thickness of 30
A single-layer tape 1 consisting of a single layer of copper foil of about μm is used. Then, the sprocket hole 11 and the lead group 20 are repeatedly formed on the carrier film 1 by using a photolithography method or a pressing method.

As shown in FIG. 1B, the lead group 20 of this example is formed so as to extend inside a rectangular opening 2 formed continuously in the approximate center of the film 1. The lead group 20 is composed of three leads 21 protruding from each side of the opening 2, that is, a total of 12 leads 21. These leads 21
The protrusions are formed in the direction of the center of the opening 2 so as to be perpendicular to the respective sides, and are formed so as to be connectable to the electrodes of the semiconductor chip mounted in the opening 2. Further, sprocket holes 11 for driving the film 1 are formed on both sides of the film 1.

Next, as shown in FIG. 1C, the carrier film 1 on which the plurality of lead groups 20 are formed is plated. In this example, of the leads 21, the inner leads 22 connected to the electrodes of the semiconductor chip are plated with Ni, which is the same material as the electrodes, as a barrier metal.
On the other hand, the outer leads 23 connected to the wiring of the board are solder-plated so that they can be mounted by reflow. The lead 21 plated with such two colors
Then, the substantially square reinforcing member 3 is bonded so as to connect the substantially midpoints 24 of the respective leads 21 forming the lead group 20. The reinforcing member 3 is formed of heat-resistant polyimide, and can suppress the bending and fluttering of the lead 21 in the bonding and molding described later. As a method of adhering the reinforcing member 3, a liquid adhesive may be used, or a sheet-shaped adhesive may be preliminarily stacked on the reinforcing member 3. It is also possible to heat bond.

As shown in FIG. 2A, the semiconductor chip 30 is bonded to the lead 21 to which the reinforcing member 3 is bonded, from the same direction as the mounting direction of the reinforcing member 3, in this example, from below the film 1 in the drawing. To do. And each lead 2
1 and each electrode 31 of the semiconductor chip 30 are connected. Further, as shown in FIG. 2B, the molding material 32 is poured from the side opposite to the mounting direction of the semiconductor chip 30, that is, from above the film 1 to perform molding. In this example, the reinforcing member 3 adhered to the leads 21 is used as a formwork to perform molding from the connection surface 33 of the semiconductor chip 30 on which the electrodes 31 are formed to the side surface 34 of the semiconductor chip 30 to form the leads 21. The connection between the electrode and the electrode 32 is strengthened. The semiconductor device manufactured in this manner is cut along the sides of the opening 2 and attached to the substrate when mounted on the substrate after the molding is completed.

3 and 4 show a semiconductor device unit 5 manufactured by the manufacturing method of this embodiment. In the semiconductor device 5 of this example, the leads 21 are attached to the semiconductor chip 30 in which three electrodes 31 on each side are provided around the substantially square connection surface 33.
Are connected. In this lead 21, the inner lead 22 connected to the electrode 31 is plated with gold 41, and the outer lead 23 outside the inner lead 22 is plated with solder 42.
The intermediate portions 24 of the leads 21 are connected by the reinforcing member 3 bonded in the same direction as the semiconductor chip 30. Further, the connection surface 3 of the semiconductor chip 30
From 3 to the side surface 34, the molding material 32 is injected with the reinforcing member 3 as a frame.

FIG. 5 shows the leads 21 of the semiconductor device 5 of this example.
Are shown enlarged. In the lead 21 of the apparatus of this example, the inner lead 22 of the lead 21 is plated with gold 41
The outer lead 22 is solder-plated 42
Has been applied. The two-color plating overlaps at a substantially middle portion 24 of the lead 21.
The reinforcing member 3 is adhered to. Thus, in the device of this example, unlike the conventional semiconductor device, the lead 21
Since the lead 21 can be plated without the reinforcing member 3 being bonded to the lead 21, the plated layer is formed over the entire lead 21. Therefore, unlike the conventional device, it is difficult to secure the plating thickness of the connecting portion between the reinforcing member 32 and the gold plating 42, so that it is possible to prevent problems such as corrosion of the leads. Further, unlike the conventional device, the surface of the lead to which the reinforcing member 3 is adhered is also plated, and it can be said that the anticorrosion effect is high. Also, in the plating process, since the reinforcing member 32 is not adhered, a uniform plating layer can be formed on both surfaces of the lead, and deformation such as warpage and bending in the plating process can be suppressed. Further, since the entire surface of the lead 21 can be plated, it is possible to reduce the exposed portion of the lead 21 that causes the entire lead 21 to be covered with the plating and cause the peeling of the formed plating layer. Is.

In the semiconductor device of this embodiment, after the plating is applied, the reinforcing member 3 for connecting the leads 21 is bonded. Therefore, after the lead 21 is formed,
It is possible to prevent the tip of the lead from fluttering as shown in FIG. 6, which is likely to occur during storage or transportation of the semiconductor chip 30 up to the time of bonding, and bending of the lead. Therefore, according to the method for manufacturing a semiconductor device shown in this example, a semiconductor device in which the reinforcing member is bonded to the lead can be manufactured without using an expensive polyimide tape.
Further, since the surface of the lead to which the reinforcing member is bonded is also plated, it is possible to suppress problems such as corrosion.
Therefore, according to the manufacturing method of the present example, it is possible to inexpensively realize a highly reliable semiconductor device with less trouble such as disconnection of leads. In particular, in the present situation where the adoption of ultra-fine leads is being considered in order to deal with electrodes that have become finer, a manufacturing method capable of preventing such lead disconnection accidents is extremely important.

Although the above description is based on the semiconductor device using the substantially square reinforcing member, as shown in FIG. 7, a reinforcing member 6 for connecting two or more leads to each other is adopted. Is also good. FIG. 7 and FIG. 8 show a state of the semiconductor device to which the reinforcing member 6 bonded to the three leads 21 on each side is attached. Further, unlike this embodiment, the reinforcing member may of course be adhered from the opposite direction to the semiconductor chip as in this device. Further, also in the range of molding, it may be limited to the connection surface of the semiconductor chip in which the electrodes are prepared.

Further, as shown in FIG. 9, as a reinforcing member, a reinforcing member 7 having a connecting portion 8 for connecting the reinforcing member and the carrier film 1 is adopted, and the reinforcement of the lead is further strengthened. It is also possible. As described above, as the reinforcing member, it is possible to adopt various shapes suitable for the shape of the lead, the mounting condition, and the like.

In this embodiment, a single-layer carrier film made of copper foil is used, but it is of course possible to adopt a double-layer carrier film in which a copper foil is adhered to a polyimide tape. In this case, in order to secure the plating over the entire lead, it is desirable to form a hole that exposes the entire lead larger than the conventional device hole. Furthermore, in this example, two-color plating consisting of gold plating and solder plating is adopted,
The entire surface of the lead may be plated with tin or an alloy of tin and lead, which has good adhesion between the gold bump electrode and the solder prepared on the substrate. To prevent tin whiskers,
When plating is performed using an alloy containing a small amount of lead, the amount of lead added is 1 to 2%, and 10% at the maximum. As described above, as the plated metal, various metals can be adopted depending on the material of the electrode, the mounting conditions, and the like.

[Embodiment 2] FIG. 10 shows a process for producing a carrier tape having a lead, which is called a B-tab, in which a projection for connection is formed at the tip of an inner lead. This manufacturing process is performed in accordance with the applicant's Japanese Patent Publication No. Sho 62-2119.
Although disclosed in detail in No. 30, the outline is as follows. The carrier tape 50 of this example uses a polyimide tape 51 as an insulating substrate, and a copper foil 52 which is a conductor is attached onto the polyimide tape 51. First, as shown in FIG. 10A, a copper foil 52 is attached to the polyimide tape 51 having the device holes 12 and the sprocket holes 11 formed therein. Photoresist 53 is applied to both surfaces of this copper foil 52. The surface of the copper foil 52 is 1
The unevenness of about 0 μm is formed, and this unevenness remains on the surface of the connection projection described later. Due to the unevenness, the aluminum oxide formed on the surface of the aluminum used as the electrode of the semiconductor chip is broken through,
It is possible to secure the bonding strength between the connection protrusion and the electrode.

Next, as shown in FIG. 10B, the copper foil 5
The photoresist 53 applied to 2 is patterned using a photomask. On the surface 52a side of the copper foil 52,
Back surface 5 with patterning corresponding to inner leads
Patterning corresponding to the connection protrusions 56 is performed on the 2b side. Then, in a state in which the patterning is performed, FIG.
As shown in (c), an etching solution is sprayed from both sides to perform half etching. At this time, the amount of half etching is adjusted by adjusting the spray pressure and the like so that the portions etched from both sides do not penetrate.

Next, as shown in FIG. 10D, the back surface 5
A protective resist 57 is applied to 2b by roll coating or spraying. Next, as shown in FIG. 10E, an etching solution is sprayed from the surface 52a side of the copper foil 52,
The unnecessary copper foil 52 left unetched in the step shown in FIG.
A lead 21 including is prepared. Then, as shown in FIG. 10F, the photoresist 53 and the protective resist 5
7 is peeled off using a dedicated peeling solution. As a result, it is possible to manufacture a lead in which the connection protrusion 58 is formed at the tip of the inner lead 22.

Next, as shown in FIG. 11A, the lead group 20 including a plurality of leads is plated. In this example, tin plating 60 is applied to both of the inner leads 22 connected to the electrodes of the semiconductor chip and the outer leads 23 connected to the wiring of the substrate among the leads 21. Then, as shown in FIG. 11B, the lead group 20 is attached to the lead 21 plated with such a plating 60.
The strip-shaped reinforcing member 3 is bonded so as to connect the substantially midpoints 24 of the respective leads 21 constituting the above. This reinforcing member 3
Is often made of heat-resistant polyimide,
When the semiconductor chip is bonded and molded, the lead 21 can be prevented from bending and fluttering. As a method of adhering the reinforcing member 3, a liquid adhesive may be used, or a sheet-shaped adhesive may be preliminarily stacked on the reinforcing member 3. It is also possible to heat bond.

As shown in FIG. 12, the semiconductor chip 30 is inserted into the device hole 12 in which such a lead group 20 is formed, and a molding material 32 is poured so as to cover the whole and molding is performed. The semiconductor devices manufactured after molding are individually manufactured by the carrier tape 50.
It is cut from and attached to the board.

The semiconductor device of this example is a semiconductor device provided with a lead having a connection protrusion, and like the first embodiment, the reinforcing member 3 for connecting the lead 21 after plating is applied.
Is glued. Therefore, after the formation of the leads 21, it is possible to prevent fluttering of the tip ends of the leads, which tends to occur during storage or transportation of the semiconductor chip 30 up to the time of bonding, and bending of the leads. At the same time, the reinforcing member is bonded. Since the lead surface is also plated, problems such as corrosion can be suppressed. Therefore, while it is possible to obtain a strong electrical connection, the problems of positional accuracy and strength retention of the lead, which are required when using a lead provided with a connection protrusion that requires high positional accuracy, are simultaneously solved. be able to. In particular, in order to respond to electrodes that have become finer,
In the present situation where the use of ultra-fine leads is being considered, such leads are very useful because they can prevent accidents such as disconnection.

Although the lead having the connection protrusion is manufactured by the photolithography method in the above, it is of course possible to manufacture it by pressing. In addition, these leads are generally gag-bonded by pulse heat or constant heat (normal heating) using a tool, but each lead is bonded one point at a time or by a laser beam. In addition, various joining methods can be adopted.

[0033]

As described above, in the method of manufacturing a semiconductor device according to the present invention, the conductor lead is plated before the reinforcing step of adhering the reinforcing member for reinforcing the conductor lead. The plating process is carried out. Therefore, in the semiconductor device manufactured by the manufacturing method of this example, it is possible to perform the same plating on the surface of the other conductor lead even at the portion of the conductor lead to which the reinforcing member is bonded. . Therefore, in the semiconductor device of the present example, it is possible to prevent corrosion that is conventionally caused by defective plating of the portion to which the reinforcing member of the conductor lead is bonded.

In particular, in the case of a semiconductor device using a conductive lead having a connection protrusion that requires high positional accuracy and strength of the lead while having a high connection strength, the method of manufacturing a semiconductor device according to the present invention is used. It is very useful in that it is possible to prevent disconnection due to defective plating and to suppress variations in the tips of the conductor leads.

As described above, according to the manufacturing method of this embodiment, in a semiconductor device which employs a conductor lead whose sectional area tends to become smaller as the electrodes of the semiconductor chip become finer, the conductor lead is broken due to corrosion. It is possible to prevent the occurrence of such a defect and manufacture a highly reliable device.

[Brief description of drawings]

FIG. 1 is a perspective view showing steps (a) to (c) of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

2 is a perspective view showing steps (a) and (b) of the method of manufacturing the semiconductor device according to the first embodiment of the present invention, which is continued from FIG. 1;

FIG. 3 is a plan view showing a semiconductor device manufactured by the manufacturing method shown in FIGS. 1 and 2;

FIG. 4 is a cross-sectional view showing a cross section of the semiconductor device shown in FIG.

5 is an enlarged view showing the leads of the semiconductor device shown in FIG. 4 in an enlarged manner.

FIG. 6 is an explanatory diagram showing fluttering of the tip of the lead.

FIG. 7 is a plan view of a semiconductor device to which a reinforcing member different from that of the semiconductor device shown in FIG. 3 is bonded.

8 is a cross-sectional view of the semiconductor device shown in FIG.

9 is a plan view of a semiconductor device to which a reinforcing member different from that of the semiconductor device shown in FIG. 7 is bonded.

FIG. 10 is a cross-sectional view showing steps (a) to (f) of manufacturing the lead group of the semiconductor device according to the second embodiment of the invention.

11 is a cross-sectional view showing steps (a) and (b) of adhering a reinforcing member to the lead group of the semiconductor device shown in FIG.

12 is a cross-sectional view showing a semiconductor device manufactured by using the lead group shown in FIG.

FIG. 13 is a process (a) of a conventional method for manufacturing a semiconductor device.
It is sectional drawing which shows (c).

FIG. 14 is a cross-sectional view showing the manufacturing steps (a) to (d) of the conventional semiconductor device, following FIG. 13;

FIG. 15 is an enlarged view showing an enlarged lead of a conventional semiconductor device.

[Explanation of symbols]

 1 ... Carrier tape 2 ... Opening 3, 6, 7 ... Reinforcing member 5 ... Semiconductor device 8 ... Connection part 10 ... Polyimide tape 11 ... Sprocket hole 12 ... Device Hole 13 ... Slit hole 14 ... Adhesive 15 ... Adhesive layer 16 ... Copper foil 17 ... Reinforcing member 18 ... Joining portion 19 ... Moisture entry path 20 ... Lead Group 21 ... Lead 22 ... Inner lead 23 ... Outer lead 24 ... Intermediate portion of lead 30 ... Semiconductor chip 31 ... Electrode 32 ... Mold material 33 ... Connection surface 34・ ・ ・ Side 41 ・ ・ ・ Gold plated layer 42 ・ ・ ・ Solder plated layer 50 ・ ・ ・ Carrier tape 51 ・ ・ ・ Polyimide tape 52 ・ ・ ・ Copper foil 53 ・ ・ ・ Photoresist 6 ... connection projection 57 ... protective resist

Claims (8)

[Claims] 1. A method of manufacturing a semiconductor device, wherein electrodes of a semiconductor chip are gang-bonded to a tape-shaped film carrier on which a lead group composed of a plurality of conductor leads is repeatedly formed. A method of manufacturing a semiconductor device, comprising: a plating step of plating a manufactured lead; and a reinforcing step of adhering a reinforcing member over at least two or more conductor-made plated leads of the lead group. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the film carrier is a single layer tape made of a thin film conductor. 3. The plating step according to claim 1, wherein the plating step includes an inner plating metal for plating an inner portion of the conductor lead in contact with an electrode of the semiconductor chip, and extending from the inner portion to the outside of the semiconductor chip. A method of manufacturing a semiconductor device, which is a two-color plating process in which an outer plating metal for plating the outer portion of the conductor lead can be independently selected. 4. The inner plating metal according to claim 3, wherein the inner plating metal is gold, and the outer plating metal is a metal selected from the group consisting of solder, tin, gold, and an alloy of tin and lead. A method for manufacturing a characteristic semiconductor device. 5. The method of manufacturing a semiconductor device according to claim 3, wherein the inner plating metal is tin and the outer plating metal is tin. 6. The method according to any one of claims 1 to 5,
The method for manufacturing a semiconductor device, wherein the conductor-made lead is a lead with a connection protrusion having a connection protrusion. 7. A semiconductor device having a lead group composed of a plurality of conductor leads, a semiconductor chip gang-bonded to the conductor leads, and a reinforcing member adhered over at least two conductor leads. 2. The semiconductor device according to claim 1, wherein the reinforcing member is an anticorrosive reinforcing member adhered on a plated layer formed on the conductor lead. 8. The semiconductor device according to claim 7, wherein the lead made of a conductor is a lead with a connection protrusion having a connection protrusion.