JPH0644557B2 - エピタキシー反応器 - Google Patents

エピタキシー反応器

Info

Publication number: JPH0644557B2
Authority: JP; Japan
Prior art keywords: reactor according; inductor; susceptor; bell; screens
Prior art date: 1984-07-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP60157106A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6136924A (ja

Inventor

ビツトリオ・ボツエツテイ

フランコ・プレテイ

ピエルジヨバンニ・ポツジ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

ERU PII II SpA

L P II SpA

Original Assignee

ERU PII II SpA

L P II SpA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-07-19

Filing date

1985-07-18

Publication date

1994-06-08

1985-07-18 Application filed by ERU PII II SpA, L P II SpA filed Critical ERU PII II SpA

1986-02-21 Publication of JPS6136924A publication Critical patent/JPS6136924A/ja

1994-06-08 Publication of JPH0644557B2 publication Critical patent/JPH0644557B2/ja

2009-06-08 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000000407 epitaxy Methods 0.000 title claims description 15
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
239000010453 quartz Substances 0.000 claims description 22
238000001816 cooling Methods 0.000 claims description 13
238000000576 coating method Methods 0.000 claims description 12
239000000758 substrate Substances 0.000 claims description 12
229910052751 metal Inorganic materials 0.000 claims description 11
239000002184 metal Substances 0.000 claims description 11
239000011248 coating agent Substances 0.000 claims description 10
230000003068 static effect Effects 0.000 claims description 8
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
239000000463 material Substances 0.000 claims description 7
229910052710 silicon Inorganic materials 0.000 claims description 7
239000010703 silicon Substances 0.000 claims description 7
238000004804 winding Methods 0.000 claims description 7
239000004020 conductor Substances 0.000 claims description 6
230000008878 coupling Effects 0.000 claims description 5
238000010168 coupling process Methods 0.000 claims description 5
238000005859 coupling reaction Methods 0.000 claims description 5
239000000203 mixture Substances 0.000 claims description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
239000003990 capacitor Substances 0.000 claims description 4
229910052802 copper Inorganic materials 0.000 claims description 4
239000010949 copper Substances 0.000 claims description 4
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
229910052737 gold Inorganic materials 0.000 claims description 4
239000010931 gold Substances 0.000 claims description 4
229910002804 graphite Inorganic materials 0.000 claims description 4
239000010439 graphite Substances 0.000 claims description 4
230000005672 electromagnetic field Effects 0.000 claims description 3
230000005674 electromagnetic induction Effects 0.000 claims description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
229910052782 aluminium Inorganic materials 0.000 claims description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
238000005267 amalgamation Methods 0.000 claims description 2
229910052804 chromium Inorganic materials 0.000 claims description 2
239000011651 chromium Substances 0.000 claims description 2
229910052759 nickel Inorganic materials 0.000 claims description 2
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
229910010271 silicon carbide Inorganic materials 0.000 claims description 2
238000007740 vapor deposition Methods 0.000 claims description 2
239000011810 insulating material Substances 0.000 claims 2
230000001419 dependent effect Effects 0.000 claims 1
230000005294 ferromagnetic effect Effects 0.000 claims 1
238000001771 vacuum deposition Methods 0.000 claims 1
239000007789 gas Substances 0.000 description 7
235000012431 wafers Nutrition 0.000 description 6
238000010438 heat treatment Methods 0.000 description 4
238000000034 method Methods 0.000 description 3
239000012071 phase Substances 0.000 description 3
230000005855 radiation Effects 0.000 description 3
239000011819 refractory material Substances 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
230000008901 benefit Effects 0.000 description 2
239000000498 cooling water Substances 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000012530 fluid Substances 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
230000008569 process Effects 0.000 description 2
238000011084 recovery Methods 0.000 description 2
239000007787 solid Substances 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
239000012809 cooling fluid Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
239000003302 ferromagnetic material Substances 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
239000012495 reaction gas Substances 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP60157106A 1984-07-19 1985-07-18 エピタキシー反応器 Expired - Fee Related JPH0644557B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
IT8421960A IT1209570B (it)	1984-07-19	1984-07-19	Perfezionamento nei reattori epitassiali.
IT21960A/84		1984-07-19

Publications (2)

Publication Number	Publication Date
JPS6136924A JPS6136924A (ja)	1986-02-21
JPH0644557B2 true JPH0644557B2 (ja)	1994-06-08

Family

ID=11189425

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60157106A Expired - Fee Related JPH0644557B2 (ja)	1984-07-19	1985-07-18	エピタキシー反応器

Country Status (6)

Country	Link
JP (1)	JPH0644557B2 (it)
CH (1)	CH666140A5 (it)
DE (1)	DE3525870A1 (it)
FR (1)	FR2567921B1 (it)
IT (1)	IT1209570B (it)
NL (1)	NL8502087A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1215444B (it) *	1987-04-24	1990-02-14	L P E S P A	Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
JPS636725U (it) *	1986-07-01	1988-01-18
DE3827506C1 (en) *	1988-08-12	1990-01-11	Marino 8011 Baldham De Pradetto	Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state
IT1392068B1 (it) *	2008-11-24	2012-02-09	Lpe Spa	Camera di reazione di un reattore epitassiale

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3424298A (en) *	1967-03-22	1969-01-28	Price Wilson Ltd Price Wilson	Ammunition holder
US3699398A (en) *	1971-10-12	1972-10-17	Reed A Newmeyer	Sensor for vehicular traffic counters
DD96852A1 (it) *	1972-05-09	1973-04-12
US4284867A (en) *	1979-02-09	1981-08-18	General Instrument Corporation	Chemical vapor deposition reactor with infrared reflector
US4322592A (en) *	1980-08-22	1982-03-30	Rca Corporation	Susceptor for heating semiconductor substrates
JPS59111997A (ja) *	1982-12-14	1984-06-28	Kyushu Denshi Kinzoku Kk	エピタキシヤル成長装置
EP0147967B1 (en) *	1983-12-09	1992-08-26	Applied Materials, Inc.	Induction heated reactor system for chemical vapor deposition
DD221973A1 (de) *	1984-03-20	1985-05-08	Goerlitz Waggonbau Veb	Fussboden fuer schienenfahrzeuge, insbesondere trieb- und reisezugwagen

1984
- 1984-07-19 IT IT8421960A patent/IT1209570B/it active
1985
- 1985-06-28 CH CH2789/85A patent/CH666140A5/it not_active IP Right Cessation
- 1985-07-18 JP JP60157106A patent/JPH0644557B2/ja not_active Expired - Fee Related
- 1985-07-18 FR FR8510992A patent/FR2567921B1/fr not_active Expired
- 1985-07-19 DE DE19853525870 patent/DE3525870A1/de not_active Ceased
- 1985-07-19 NL NL8502087A patent/NL8502087A/nl not_active Application Discontinuation

Also Published As

Publication number	Publication date
NL8502087A (nl)	1986-02-17
DE3525870A1 (de)	1986-01-23
CH666140A5 (it)	1988-06-30
IT8421960A0 (it)	1984-07-19
FR2567921B1 (fr)	1988-04-15
FR2567921A1 (fr)	1986-01-24
IT1209570B (it)	1989-08-30
JPS6136924A (ja)	1986-02-21

Legal Events

Date	Code	Title	Description
2004-06-08	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
US4858557A (en)	1989-08-22	Epitaxial reactors
KR0173040B1 (ko)	1999-03-30	가열장치 및 그 제조방법 및 그것을 이용한 처리장치
US5119761A (en)	1992-06-09	Substrate heating apparatus for forming thin films on substrate surface
US4579080A (en)	1986-04-01	Induction heated reactor system for chemical vapor deposition
EP0147967B1 (en)	1992-08-26	Induction heated reactor system for chemical vapor deposition
JPH0645261A (ja)	1994-02-18	半導体気相成長装置
KR20050039709A (ko)	2005-04-29	물품을 제어가능하게 가열하는 방법 및 유도 가열 장치
JPS62205619A (ja)	1987-09-10	半導体の加熱方法及びその方法に使用されるサセプタ
TW201003815A (en)	2010-01-16	Apparatus for manufacturing semiconductor
JP2009295485A (ja)	2009-12-17	マイクロ波プラズマ処理装置
US6031211A (en)	2000-02-29	Zone heating system with feedback control
US6191390B1 (en)	2001-02-20	Heating element with a diamond sealing material
US3665139A (en)	1972-05-23	Device for epitactic precipitation of semiconductor material
JP2588578B2 (ja)	1997-03-05	エピタキシヤル反応炉
US4284867A (en)	1981-08-18	Chemical vapor deposition reactor with infrared reflector
US3898413A (en)	1975-08-05	Induction heat coil arrangement
JP3150027B2 (ja)	2001-03-26	プラズマ発生装置及びこのプラズマ発生装置を用いたプラズマ処理装置
JPS6136924A (ja)	1986-02-21	エピタキシー反応器
US3935412A (en)	1976-01-27	Induction heated vapor source
JPH04183871A (ja)	1992-06-30	マイクロ波プラズマｃｖｄ法による堆積膜形成装置
US3906892A (en)	1975-09-23	Plasma deposition of thin layers of substrated or the like
US3536892A (en)	1970-10-27	Device for thermal processing of semiconductor wafers
JPH07114188B2 (ja)	1995-12-06	半導体基板の熱処理方法及びそれに用いる熱処理装置
US3769484A (en)	1973-10-30	Apparatus and method for floating-zone melting of a semiconductor rod
CN210765582U (zh)	2020-06-16	用于碳化硅外延的加热装置