JPH065485A - Manufacture of semiconductor device - Google Patents

Abstract

(57) [Summary] [Purpose] To alleviate internal stress during device formation. [Structure] 1 is a wafer substrate which constitutes a semiconductor device, and devices are formed on the wafer substrate 1. This wafer substrate 1 is formed in advance according to the internal stress of the device with respect to the surface of the wafer substrate 1. That is, when the device has internal stress in the compression direction, the wafer substrate 1
Is curved in advance as shown in FIG. When the device has internal stress in the tensile direction, the wafer substrate 1 is curved in advance as shown in FIG. If there is no internal stress, it is flattened as shown in FIG.
Thereby, the internal stress is corrected by the curved portion.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, and more particularly to a wafer manufacturing method.

[0002]

2. Description of the Related Art FIG. 5 is an overall perspective view of a conventional semiconductor device wafer, and FIG. 6 is an overall perspective view of a conventional semiconductor device.
In these figures, 1 is a wafer substrate, which is shown in FIG.
As shown in (c), the bending direction and the bending rate are variously varied in the manufacturing process. Reference numeral 2 is a thin film formed on the wafer substrate 1. In addition, the arrow in the figure indicates the bending direction of the wafer substrate 1.

Next, a case will be described in which a thin film 2 having different internal stress is formed on a wafer substrate 1 having various variations in the bending direction and the bending rate. First, when the thin film 2 in which the internal stress of the thin film 2 is compressed on the surface of the wafer substrate 1 is formed on the wafer substrate 1, as shown in FIGS.
The wafer substrate 1 which is curved as shown in FIG.
It deforms as shown in (c), (e), and (b). In this case, the stronger the internal stress of the thin film 2, the more the wafer substrate 1 is curved in the direction shown in (e). Next, when the thin film 2 in which the internal stress of the thin film 2 is in the tensile direction with respect to the surface of the wafer substrate 1 is formed on the wafer substrate 1, the thin film 2 is curved as shown in FIGS. The wafer substrate 1 is shown in FIG.
It deforms as shown in (c) and (a). In this case, the stronger the internal stress of the thin film 2 is, the more curved the wafer substrate 1 is (d).
It becomes the direction shown in.

[0004]

As described above, in the conventional semiconductor device, since the bending direction and the bending rate of the wafer substrate are variously varied, devices having different internal stresses are formed on the wafer substrate. Then, the bending direction and the bending rate of the wafer substrate are varied, and there is a problem that a deviation occurs at the time of exposure and a crack occurs when the internal stress is large. The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device in which internal stress of a device is relaxed during device formation.

[0005]

In order to achieve this object, the present invention is a method for manufacturing a semiconductor device in which a device is formed on a wafer, wherein the internal stress is previously set in accordance with the internal stress of the device. The wafer is curved in a direction of relaxation.

[0006]

In the present invention, the internal stress of the device is relieved by the curved formation of the wafer, so that the curvature rate of the wafer is always constant and small.

[0007]

An embodiment of the present invention will be described below with reference to the drawings. 1 is an overall perspective view of a wafer substrate in a method for manufacturing a semiconductor device according to the present invention, FIG. 2 is an overall perspective view of the same semiconductor device, FIG. 3 is a side view showing the same method for manufacturing a wafer substrate, and FIG. It is a side view which shows the 2nd example of the manufacturing method of a board | substrate. The feature of the present invention resides in that the wafer substrate 1 is previously curved in a certain direction according to the direction and strength of the internal stress of the device formed on the wafer substrate 1. That is, when the internal stress of the thin film 2 as a device is in the tensile direction with respect to the surface of the wafer substrate 1, the wafer substrate 1 is preliminarily curved as shown in FIG. When the thin film 2 is formed on the wafer substrate 1, the internal stress of the thin film 2 is relieved by the bending of the wafer substrate 1, and the bending of the wafer substrate 1 is corrected by the internal stress of the thin film 2 to form the semiconductor device as shown in FIG. Becomes flat. When the internal stress of the thin film 2 is in the compression direction with respect to the surface of the wafer substrate 1, if the wafer substrate 1 is preliminarily curved as shown in FIG. Similarly, the semiconductor device becomes flat as shown in FIG. If no internal stress is generated in the thin film 2, the wafer substrate 1 may be formed flat as shown in FIG. 1 (c).

Next, a method of manufacturing the wafer substrate 1 will be described. In FIG. 3, 3 is a pair of pressure plates.
The pressure surfaces 3a having a certain constant and the same curvature are formed on the surfaces facing each other. By heating the pressure plate 3 and sandwiching the wafer substrate 1 between the pair of pressure surfaces 3 a, the wafer substrate 1 can be curved. The curvature rate of the wafer substrate 1 is determined by the curvature of the pressure surface 3a of the pressure plate 3. FIG. 4 shows a second embodiment of the method for manufacturing the wafer substrate 1. In this embodiment, the thick wafer substrate 1 is polished by the polishing plate 4 having the polishing surface 4a having a certain constant and the same curvature. To form.

[0009]

As described above, according to the present invention, the wafer substrate is preliminarily curved in a direction for relaxing the internal stress of the device according to the direction and strength of the internal stress of the device. Is alleviated by the curved formation of the wafer, which can prevent the occurrence of cracks or the like during the manufacturing of the semiconductor device. In addition, since the curvature of the wafer substrate is corrected by the internal stress, if the curvature ratio of the wafer substrate is selected according to the strength of the internal stress of the device, the wafer substrate can always be kept at a constant curvature ratio. There is an effect of preventing a shift at the time of exposure.

[Brief description of drawings]

FIG. 1 is an overall perspective view of a wafer substrate in a method of manufacturing a semiconductor device according to the present invention.

FIG. 2 is an overall perspective view of a semiconductor device according to the present invention.

FIG. 3 is a side view showing a method for manufacturing a wafer in the method for manufacturing a semiconductor device according to the present invention.

FIG. 4 is a side view showing a second embodiment of the wafer manufacturing method in the semiconductor device manufacturing method according to the present invention.

FIG. 5 is an overall perspective view of a conventional semiconductor device wafer.

FIG. 6 is an overall perspective view of a conventional semiconductor device.

[Explanation of symbols]

 1 Wafer substrate 2 Thin film 3 Pressure plate 4 Polishing plate

Claims (1)

[Claims] 1. A method of manufacturing a semiconductor device in which a device is formed on a wafer, wherein the wafer is curvedly formed in advance in a direction to alleviate the internal stress of the device according to the internal stress of the device. Manufacturing method.