JPH065507A - Developing apparatus in photolithographic process - Google Patents

Developing apparatus in photolithographic process

Info

Publication number
JPH065507A
JPH065507A JP4188796A JP18879692A JPH065507A JP H065507 A JPH065507 A JP H065507A JP 4188796 A JP4188796 A JP 4188796A JP 18879692 A JP18879692 A JP 18879692A JP H065507 A JPH065507 A JP H065507A
Authority
JP
Japan
Prior art keywords
work
chamber
developing
photoresist
waiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4188796A
Other languages
Japanese (ja)
Inventor
Hiroi Oketani
大亥 桶谷
Tomoo Yamamoto
智郎 山本
Makoto Yamada
真琴 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4188796A priority Critical patent/JPH065507A/en
Publication of JPH065507A publication Critical patent/JPH065507A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(57)【要約】 【目的】 基板上に形成したフォトレジストを露光させ
て得たワークを現像する場合、現像処理中に現像液ミス
トが待機中のワークのレジスト表面に付着し、これによ
り生じるワークの不良発生をなくすものである。 【構成】 待機室1と現像処理室5とを、シャッター6
を有する隔壁を介して隣接させると共に、各室1,5内
には夫々各室内に静置されたワークa,a'に吹き付ける
為の純水用ノズル4,4…と、現像液用ノズル7とを夫
々設けてなる。
(57) [Abstract] [Purpose] When developing a work obtained by exposing the photoresist formed on the substrate to light, the developer mist adheres to the resist surface of the waiting work during the development process, which causes This eliminates the occurrence of defective work. [Structure] The standby chamber 1 and the development processing chamber 5 are provided with a shutter 6
Nozzles 4, 4 ... For spraying the workpieces a, a ′, which are placed in the chambers 1 and 5, respectively, while being adjacent to each other via a partition having And, respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、液晶ディスプレイ(T
FT−LCD)或は半導体ウエハー等の微細加工技術で
用いられるフォトリソ工程(光露光技術)における現像装
置に関するものである。
The present invention relates to a liquid crystal display (T
The present invention relates to a developing device in a photolithography process (light exposure technique) used in a fine processing technique such as FT-LCD) or a semiconductor wafer.

【0002】[0002]

【従来の技術】従来、基板上に形成したフォトレジスト
の露光部について現像する装置は、図3に示すように送
入口2からローラ3,3…によってワークaを受け入
れ、予め設定したプログラムに従って一定時間待機させ
る待機室1と、該ワークaの進入路にあるシャッター6
を開いて受け入れると同時に、該ワークaを一定時間静
置し、これに現像液を吹きかける吐出ノズル7と、現像
液の劣化を防止するための窒素吐出ノズル8を備えた現
像処理室5と、シャッター6'を有する隔壁を介して設
けられ、且つ該現像処理室5にて処理されたワークa'
の上下面を水洗する上下の吐出ノズル11,11'を備え
た水洗室10と、水洗されたワークa'の水分を除去す
る為のエアーナイフ14,14'を備えた乾燥室13とか
らなる。
2. Description of the Related Art Conventionally, an apparatus for developing an exposed portion of a photoresist formed on a substrate, as shown in FIG. 3, receives a work a from an inlet 2 by rollers 3, 3, ... A waiting room 1 for waiting for a time and a shutter 6 on the approach path of the work a
At the same time as opening and receiving the work a, the work a is allowed to stand for a certain period of time and a developing solution is sprayed onto it, and a development processing chamber 5 is provided with a nitrogen discharge nozzle 8 for preventing the deterioration of the developing solution. Workpiece a'provided through a partition having a shutter 6'and processed in the development processing chamber 5
It comprises a washing chamber 10 having upper and lower discharge nozzles 11 and 11 'for washing the upper and lower surfaces with water, and a drying chamber 13 having air knives 14 and 14' for removing water from the washed workpiece a '. .

【0003】上記装置においては、ガラスその他の基板
表面に設けたフォトレジスト(ポジレジスト)を紫外線照
射によって所定形状に露光させたものをワークaとな
し、送入口2から待機室1内に送入する。ここで、ワー
クaは現像処理室内にある先行ワークの現像所要時間だ
け予めプログラミングしたところに従って所定時間待機
し、その後シャッター6を開いてワークを現像処理室5
内に導き、ここで該ワークを静置して吐出ノズル7から
の現像液を浴びせ、ワークのフォトレジストの露光部分
を一定時間かけて除去し、所定形状のパターニングを行
い処理済みのワークa'を得るものである。次に前記に
おいて現像処理されたワークa'は更にシャッター6'が
開かれると同時に水洗室10内に送り込まれ、ここで上
下の吐出ノズル11,11'からリンス液(すすぎ水=純
水)をかけて残存する現像液を洗い落して現像の進行を
速やかに停止し、完全に洗浄が終了した時点でワーク
a'を乾燥室13内に送り、上下のエアーナイフ14,1
4'によってワークa'の表面に付着した水分を完全に飛
散させて、送出口2'からワークa'を取り出すようにし
ている。
In the above apparatus, a work (a) is made by exposing a photoresist (positive resist) provided on the surface of a glass or other substrate to a predetermined shape by irradiating ultraviolet rays, and the work a is fed into the waiting chamber 1 from the feeding port 2. To do. Here, the work a waits for a predetermined time according to a preprogrammed time required for the development of the preceding work in the development processing chamber, and then opens the shutter 6 to open the work in the development processing chamber 5.
Inside, where the work is allowed to stand still and the developer from the discharge nozzle 7 is bathed, the exposed portion of the photoresist of the work is removed over a certain period of time, and patterning of a predetermined shape is performed to complete the processed work a ′. Is what you get. Next, the work a'developed in the above is further fed into the washing chamber 10 at the same time when the shutter 6'is opened, and the rinsing liquid (rinsing water = pure water) is discharged from the upper and lower discharge nozzles 11 and 11 '. Then, the remaining developing solution is washed off to quickly stop the progress of development, and when the cleaning is completed, the work a'is sent into the drying chamber 13 and the upper and lower air knives 14, 1
The water attached to the surface of the work a'is completely scattered by 4 ', and the work a'is taken out from the delivery port 2'.

【0004】[0004]

【発明が解決しようとする課題】しかし上記従来の装置
においては、ワークが待機室1から現像処理室5内へ進
入する部分に間仕切りとしてシャッター6が設けられて
いて、待機室1内で次に供給されるワークaが待機中で
あっても隣室の現像室5内においては先行のワークにつ
いて現像処理がなされている為、その際に生じる現像液
ミストがシャッター6の僅少間隙を経て待機室1内に浸
入して待機中のワークのフォトレジストcに図4のよう
に直接結露eを生じる。この時の現像液ミストは現像処
理室内で吐出ノズル7から吐出している現像液より高い
濃度に濃縮された状態となってミスト化している為に、
フォトレジストの露光した部分或は露光されてない部分
の何れを問わず結露した部分のフォトレジストの膜cを
溶解し、その状態で現像処理室5内で現像されるので、
水洗及び乾燥して取出されたワークの状態は図5のよう
に、基板b上に形成した所定形状のパターンのうち正常
なパターン状のフォトレジストcのみでなく断線部c'
や欠損部c"をもった欠陥パターンが形成され不良ワー
クとなる。そこで、本発明装置は現像処理中にパターン
に上記欠陥を生じないようにした装置を提供しようとす
るものである。
However, in the above-mentioned conventional apparatus, the shutter 6 is provided as a partition at the portion where the work enters from the standby chamber 1 into the development processing chamber 5, and in the standby chamber 1 Even if the supplied work a is on standby, the preceding work is developed in the adjacent developing chamber 5, so that the developer mist generated at that time passes through the slight gap of the shutter 6 and the waiting chamber 1 Condensation e is directly generated on the photoresist c of the workpiece that has entered the inside and is waiting, as shown in FIG. Since the developer mist at this time is in a state of being concentrated to a higher concentration than the developer discharged from the discharge nozzle 7 in the development processing chamber, it becomes mist.
Regardless of whether the photoresist is exposed or unexposed, the dew condensation portion of the photoresist film c is dissolved, and development is performed in the development processing chamber 5 in that state.
As shown in FIG. 5, the state of the workpiece picked up by washing with water and drying is not only the normal pattern photoresist c among the patterns of the predetermined shape formed on the substrate b, but also the disconnection portion c ′.
A defective pattern having a defective portion c "and a defective portion is formed, resulting in a defective work. Therefore, the apparatus of the present invention is intended to provide an apparatus which prevents the above-mentioned defect from occurring in the pattern during the developing process.

【0005】[0005]

【課題を解決するための手段】基板上にフォトレジスト
膜を設け、露光処理を施したワークを受け入れて時間待
ちする待機室と、該ワークの露光部分を現像する処理室
等からなる現像装置において、前記待機室内に待機中の
ワークにたいして純水を吹き付ける吐出ノズルを設けて
なる。
In a developing apparatus, which comprises a waiting chamber for providing a photoresist film on a substrate and receiving an exposed workpiece and waiting for a time, a processing chamber for developing an exposed portion of the workpiece, and the like. A discharge nozzle for spraying pure water onto the waiting work is provided in the waiting chamber.

【0006】[0006]

【作用】待機室内で待機中のワークのフォトレジスト表
面を純水にて湿潤させておくことにより、該フォトレジ
スト表面上に純水の薄い膜が形成され、隣室の現像処理
室から浸入して来る現像液ミストは、この純水薄膜上に
かかることになり、フォトレジストとの直接接触が妨げ
られ、現像液ミストによるフォトレジストの浸蝕を防止
する。
The thin film of pure water is formed on the surface of the photoresist by moistening the surface of the photoresist of the workpiece waiting in the standby chamber with pure water. The coming developer mist will be impinged on this pure water thin film, which prevents direct contact with the photoresist and prevents erosion of the photoresist by the developer mist.

【0007】[0007]

【実施例】以下本発明について図面に示す実施例により
詳細に説明すると、本発明の最も要旨とする処は、図1
に示すように挿入口2からローラ3,3…によって送り
込まれるワークaを予めコンピュータのメモリー回路で
プログラミングした時間だけ待機させるようにした待機
室1内に、該ワークaのフォトレジスト面に純水を吹き
付ける吐出ノズル4,4…を設けた点である。このよう
に構成された待機室1の側部に隣接して現像処理室5を
設け、該現像処理室5と前記待機室1との隔壁部のワー
ク進入路にはシャッター6を設けて両室を互いに遮断す
るようにしており、現像処理室内には送り込まれたワー
クに現像液を吹き付けるための吐出ノズル7と現像液の
劣化を防止するための窒素吐出ノズル8とを備え下方
に、排液管9を設けている。又、該現像処理室5の他側
には前記同様にワークの進路にシャッター6'を設けた
隔壁を介して水洗室10を設置し、その内部にはワーク
の上下両面を同時に水洗する純水即ちリンス液を吐出す
る為の吐出ノズル11,11'を備え、該室下部に排水管
12を設け、更に、該水洗室10の側部に隔壁を介して
乾燥室13を設け、その内部に送り込まれて来たワーク
の上下両面の水分を除去するエアーカッタ14,14'を
設置し、他方の側壁に設けた送出口2'から順次処理済
ワークを取り出すように構成している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the embodiments shown in the drawings. The most gist of the present invention is shown in FIG.
As shown in FIG. 2, the work a fed by the rollers 3, 3, ... From the insertion port 2 is made to stand by for the time programmed in advance by the memory circuit of the computer, and the pure water is applied to the photoresist surface of the work a. The point is that the discharge nozzles 4, 4, ... A developing processing chamber 5 is provided adjacent to a side portion of the standby chamber 1 thus configured, and a shutter 6 is provided in a work entrance path of a partition wall portion between the developing processing chamber 5 and the waiting chamber 1 so that both chambers are provided. Are shut off from each other, and a discharge nozzle 7 for spraying the developing solution onto the work sent into the developing processing chamber and a nitrogen discharge nozzle 8 for preventing the deterioration of the developing solution are provided, and the discharge liquid is provided below. A tube 9 is provided. A water washing chamber 10 is installed on the other side of the development processing chamber 5 through a partition wall provided with a shutter 6'in the same way as described above, and pure water for washing the upper and lower surfaces of the work simultaneously is installed therein. That is, the discharge nozzles 11 and 11 ′ for discharging the rinse liquid are provided, the drain pipe 12 is provided at the lower part of the chamber, and the drying chamber 13 is provided at the side of the washing chamber 10 via a partition wall, and the inside thereof is provided. Air cutters 14 and 14 'for removing water on the upper and lower surfaces of the delivered work are installed, and the processed works are sequentially taken out from a delivery port 2'provided on the other side wall.

【0008】次に本発明の一連動作について述べると、
先ず待機室1の送入口2へ供給されるワークaは、ガラ
スその他の基板b上に前記従来例でも述べたように、こ
こではポジタイプのフォトレジストcを施したものを例
示し、該フォトレジストcに紫外線照射によって所定形
状に露光させたものをワークaとなし、送入口2から待
機室1内に送り込まれるものとする。この時待機室1内
には吐出ノズル4,4…から純水が噴出しており、常に
待機中にあるワークaの表面に純水膜を形成していて、
前記ワークaは現像処理室5内にある先行ワークの現像
処理所要時間だけ予めプログラミングした所の時間だけ
待機室1内において待機し、その後現像処理が終了した
時点でシャッター6は開かれ待機中にあったワークaを
現像処理室5内へ導く、この時先行ワークの現像処理の
際に生じて現像処理室内に充満している現像液ミストが
待機室1内に流れ込んで未だ待機中にあるワークaの表
面に付着しようとする。しかし待機中のワークaの表面
は吐出ノズル4,4…からの純水によって常に水膜(1〜
10μm)によって掩われているために現像液ミストの結
露eを生じても図2に示すように水膜d上に載った状態
となり、しかも水膜によって希釈されると共に、該水膜
dが吐出ノズル4から吐出する純水の連結供給によって
流動している為忽ち流失し、フォトレジストcの面を保
護し乍ら現像処理室5内へ送り込まれる。
Next, a series of operations of the present invention will be described.
First, the work a supplied to the inlet 2 of the standby chamber 1 is exemplified by a positive type photoresist c provided on a substrate b made of glass or the like as described in the conventional example. It is assumed that a work a is obtained by exposing c to a predetermined shape by irradiating ultraviolet rays, and is sent into the standby chamber 1 from the inlet 2. At this time, pure water is ejected from the discharge nozzles 4, 4 ... into the standby chamber 1, and a pure water film is always formed on the surface of the workpiece a which is on standby.
The work a waits in the waiting chamber 1 for a predetermined programming time of the preceding work in the development chamber 5, and then the shutter 6 is opened at the time of completion of the development process to wait. The existing work a is introduced into the development processing chamber 5. At this time, the developer mist that is generated during the development processing of the preceding work and is filled in the development processing chamber flows into the waiting chamber 1 and is still waiting. Attempt to adhere to the surface of a. However, the surface of the workpiece a in the standby state is always covered with a water film (1 to 1) by pure water from the discharge nozzles 4, 4.
Even if dew condensation e of the developer mist occurs, it remains on the water film d as shown in FIG. 2 and is diluted by the water film, and the water film d is discharged. Since the pure water discharged from the nozzle 4 is flowing and is flowing, the pure water is washed away, and the surface of the photoresist c is protected and fed into the development processing chamber 5.

【0009】そこでワークは予め設定した現像処理所要
時間だけ静止状態に保持され、ノズル7から噴出する現
像液によりフォトレジストの面は露光された形に従って
パターニングが進行し、処理室5内の液は排液管9を経
て他方で集められ精製して再利用に供され、処理が終了
した処理済ワークa'は次の水洗室10へ送られる。そ
こで前記水洗室10内においては上下のリンス液(すす
ぎ用の純水)を各吐出ノズル11,11'から処理済みワ
ークa'に向かって吹き付けることにより速やかに現像
液を洗い落として現像の進行を停止させ、使用済の水は
下部の排水管12によって集められ再利用される。
Therefore, the work is held stationary for a preset developing treatment time, and the surface of the photoresist is patterned by the developing solution ejected from the nozzle 7 according to the exposed shape, and the solution in the processing chamber 5 is removed. The treated work a ′, which has been collected by the other via the drainage pipe 9, purified, reused, and treated, is sent to the next washing chamber 10. Therefore, in the water washing chamber 10, the upper and lower rinse liquids (pure water for rinsing) are sprayed from the respective discharge nozzles 11 and 11 'toward the processed work a', so that the developing liquid is quickly washed off and the development progresses. The stopped and used water is collected and reused by the lower drain pipe 12.

【0010】水洗が終了したワークa'は乾燥室13に
送られ、ここでエアーナイフ14,14'によって該ワー
クa'の両面に付着水分を完全に水切りして完成品とし
て該乾燥室13の送出口2'から送り出され総べての一
連動作は終了する。
The work a'which has been washed with water is sent to the drying chamber 13, where the water knives 14 'are used to completely drain off the water adhering to both sides of the work a'and the finished product in the drying chamber 13' is dried. All the series of operations that have been sent out from the outlet 2'end.

【0011】[0011]

【発明の効果】本発明は上述のように構成されているの
で待機中に隣接する現像処理室からの現像液ミストは水
膜によって遮ぎられるからワークaのフォトレジストは
現像処理前に浸蝕されることがなくなり高品質のパター
ニング処理ができ、著しく製品歩留まりが向上する。
又、例え現像液が水膜を介して間接的にフォトレジスト
の面に接触したとしても現像液は水膜によって著しく希
釈されるから殆ど影響はない。
Since the present invention is constructed as described above, the developer mist from the adjacent developing processing chamber is blocked by the water film during standby, so that the photoresist of the work a is eroded before the developing processing. The high-quality patterning process can be performed and the product yield is significantly improved.
Further, even if the developer indirectly contacts the surface of the photoresist through the water film, the developer is significantly diluted by the water film, so that there is almost no effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明装置の概要を示す縦断側面図である。FIG. 1 is a vertical sectional side view showing an outline of a device of the present invention.

【図2】同上装置により現像される時のワークの状態を
示す側面略図である。
FIG. 2 is a schematic side view showing a state of a work when being developed by the same apparatus.

【図3】従来例の装置における縦断側面図である。FIG. 3 is a vertical side view of a conventional device.

【図4】同上装置により現像される時のワークの状態を
示す側面略図である。
FIG. 4 is a schematic side view showing a state of a work when being developed by the same apparatus.

【図5】図3によるワークの欠陥例を示す平面図であ
る。
5 is a plan view showing a defect example of the work according to FIG. 3. FIG.

【符号の説明】[Explanation of symbols]

1 待機室 5 現像処理室 6 シャッター 7 現像液用吐出ノズル a ワーク 1 Standby chamber 5 Development processing chamber 6 Shutter 7 Discharge nozzle for developer a Work

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ワークの待機室と、該待機室から送り込
まれるワークの現像処理室等からなる現像装置におい
て、前記待機室内にワーク上に設けた露光済フォトレジ
スト表面に純水を吹き付ける吐出ノズルを設けたことを
特徴とするフォトリソ工程における現像装置。
1. A developing device comprising a work waiting chamber, a work developing chamber for feeding the work from the waiting chamber, and the like, and a discharge nozzle for spraying pure water onto the exposed photoresist surface provided on the work in the waiting chamber. And a developing device in a photolithography process.
JP4188796A 1992-06-22 1992-06-22 Developing apparatus in photolithographic process Pending JPH065507A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4188796A JPH065507A (en) 1992-06-22 1992-06-22 Developing apparatus in photolithographic process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4188796A JPH065507A (en) 1992-06-22 1992-06-22 Developing apparatus in photolithographic process

Publications (1)

Publication Number Publication Date
JPH065507A true JPH065507A (en) 1994-01-14

Family

ID=16229955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4188796A Pending JPH065507A (en) 1992-06-22 1992-06-22 Developing apparatus in photolithographic process

Country Status (1)

Country Link
JP (1) JPH065507A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04335645A (en) * 1991-05-13 1992-11-24 Kyodo Printing Co Ltd Method and device for developing photoresist

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04335645A (en) * 1991-05-13 1992-11-24 Kyodo Printing Co Ltd Method and device for developing photoresist

Similar Documents

Publication Publication Date Title
US6017663A (en) Method of processing resist utilizing alkaline component monitoring
JPS6235668B2 (en)
WO2003105201A1 (en) Substrate processing device, substrate processing method, and developing device
TW202230042A (en) Developing method and substrate treatment system
JPH10163104A (en) Developing device for manufacturing semiconductor device and method of manufacturing the same
CN1841213B (en) Developing method and method of manufacturing a semiconductor device
JP2000223458A (en) Substrate processing equipment
JPH065507A (en) Developing apparatus in photolithographic process
JP3151957B2 (en) Chemical reaction apparatus and its reaction control method, chemical liquid disposal method, and chemical liquid supply method
KR100367991B1 (en) Apparatus for treating surface of boards
JPH06333899A (en) Chemical treatment method and treatment device therefor
JP4365192B2 (en) Transport type substrate processing equipment
JP4409901B2 (en) Residual liquid removal device
JP3453022B2 (en) Developing device
KR101151777B1 (en) Wet scrubber
JP6648248B2 (en) Substrate processing method
JP2005005587A (en) Resist stripping device
JPH11238716A (en) Substrate treatment apparatus
JP3341949B2 (en) Semiconductor substrate cleaning equipment
JPH11290800A (en) Chemical treatment apparatus, chemical treatment method and substrate cleaning method
KR100646060B1 (en) Developing method and developing apparatus
JP3447890B2 (en) Substrate processing equipment
JP3582003B2 (en) Development processing equipment
JPH10199791A (en) Semiconductor device manufacturing method and manufacturing apparatus
JP3238834B2 (en) Method for forming thin film pattern and chemical reaction apparatus