JPH065936A - Superconducting transistor - Google Patents
Superconducting transistorInfo
- Publication number
- JPH065936A JPH065936A JP4156469A JP15646992A JPH065936A JP H065936 A JPH065936 A JP H065936A JP 4156469 A JP4156469 A JP 4156469A JP 15646992 A JP15646992 A JP 15646992A JP H065936 A JPH065936 A JP H065936A
- Authority
- JP
- Japan
- Prior art keywords
- film
- collector
- transistor
- metal
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 230000000295 complement effect Effects 0.000 claims abstract description 10
- 239000002887 superconductor Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 229910000431 copper oxide Inorganic materials 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 6
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
(57)【要約】
【目的】 超伝導トランジスタの製造が行われ易く、且
つ高速で低消費電力な超伝導トランジスタ構造を提供す
る。
【構成】 エミッタ・ベース・コレクタの少なくともコ
レクタを金属と成した超伝導トランジスタ、及びエミッ
タ・ベース・コレクタの少なくともベースを金属と成し
た超伝導トランジスタ、及びエミッタ・ベース・コレク
タの少なくともコレクタを金属と成した超伝導トランジ
スタとエミッタ・ベース・コレクタの少なくともベース
を金属と成した超伝導トランジスタとエミッタ・ベース
・コレクタの少なくともコレクタを金属と成した超伝導
トランジスタとを相補型に構成した超伝導トランジス
タ。
(57) [Abstract] [Purpose] To provide a superconducting transistor structure in which a superconducting transistor can be easily manufactured, and which has high speed and low power consumption. A superconducting transistor in which at least a collector of an emitter / base collector is made of metal, a superconducting transistor in which at least a base of an emitter / base collector is made of metal, and at least a collector of an emitter / base / collector is made of metal. A superconducting transistor in which a superconducting transistor made of a metal and a superconducting transistor in which at least a base of an emitter / base / collector is made of metal and a superconducting transistor in which at least a collector of an emitter / base / collector is made of metal are complementary.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超伝導トランジスタの
構造に関する。FIELD OF THE INVENTION This invention relates to the structure of superconducting transistors.
【０００２】[0002]
【従来の技術】従来、超伝導トランジスタは特開平ー３
０３７７０、特開平２ー１４４９７７、特開平２ー１９
１３８２及び特開平２ー１８１４８１等に示されている
如く、ベース及びコレクタは酸化物超伝導体か或は半導
体で構成されるのが通例であった。2. Description of the Related Art Conventionally, a superconducting transistor is disclosed in Japanese Patent Laid-Open No.
03770, JP-A-2-144977, JP-A-2-19
As shown in 1382 and Japanese Patent Laid-Open No. 2-181481, the base and collector are usually made of an oxide superconductor or a semiconductor.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
によると、必ずしも超伝導トランジスタが製造し易くな
いと云う課題や、高速化や低消費電力化が図れない場合
があると言う課題があった。However, according to the above-mentioned prior art, there are problems that a superconducting transistor is not always easy to manufacture, and that it may not be possible to achieve high speed and low power consumption. .
【０００４】本発明は、かかる従来技術の課題を解決
し、超伝導トランジスタの製造が行われ易く、且つ高速
で低消費電力な超伝導トランジスタ構造を提供する事を
目的とする。An object of the present invention is to solve the problems of the prior art and to provide a superconducting transistor structure in which a superconducting transistor can be easily manufactured, and which has high speed and low power consumption.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成する為に、本発明は、超伝導トランジスタに
関し、（１） エミッタ・ベース・コレクタの少なくと
もコレクタを金属と成す手段を取る事、及び（２） エ
ミッタ・ベース・コレクタの少なくともベースを金属と
成す手段を取る事、及び（３） エミッタ・ベース・コ
レクタの少なくともコレクタを金属と成した超伝導トラ
ンジスタとエミッタ・ベース・コレクタの少なくともベ
ースを金属と成した超伝導トランジスタとを相補型に構
成する手段を取る事、等の手段を取る。In order to solve the above problems and to achieve the above objects, the present invention relates to a superconducting transistor, (1) A means for forming at least the collector of an emitter / base / collector is made of metal. And (2) taking a means of forming at least the base of the emitter-base-collector with metal, and (3) forming a superconducting transistor and an emitter-base-collector with at least the collector of the emitter-base-collector made of metal. At least a means for forming a complementary type superconducting transistor having a metal base is used.
【０００６】[0006]
【実施例】以下、実施例により本発明を詳述する。EXAMPLES The present invention will be described in detail below with reference to examples.
【０００７】図１は、本発明の一実施例を示す超伝導ト
ランジスタの断面図である。すなわち、石英やセラミッ
ク等から成る絶縁基板１０１上にイットリュウム・バリ
ュウム・銅酸化物等から成る酸化物超伝導体膜１０２を
スパッタ法や分子線エピタキシャル法等により形成して
正孔伝導型ｐのコレクタＣと成し、該酸化物超伝導体膜
１０２上にチタンー白金、アルミニュウム、チタンータ
ングステン、ニオビュウムあるいはその他の金属や合金
から成る金属膜１０３をスパッタ法や分子線エピタキシ
ャル法等により極めて薄く１ナノメータから１０ナノメ
ータ厚さに形成して電子伝導型ｎのベースＢと成し、該
金属膜１０３上にイットリュウム・バリュウム・銅酸化
物等から成る酸化物超伝導体膜１０４をスパッタ法や分
子線エピタキシャル法等により形成して正孔伝導型ｐの
エミッタＥと成し、ｐ−ｎ−ｐトランジスタを形成した
ものである。尚、エミッタあるいはコレクタのいずれか
一方が半導体膜で構成されても良い。FIG. 1 is a sectional view of a superconducting transistor showing an embodiment of the present invention. That is, an oxide superconductor film 102 made of yttrium, barium, copper oxide, etc. is formed on an insulating substrate 101 made of quartz, ceramics, or the like by a sputtering method, a molecular beam epitaxial method, or the like, and the hole conduction type p is formed. A metal film 103 made of a collector C and made of titanium-platinum, aluminum, titanium-tungsten, niobium, or other metal or alloy is formed on the oxide superconductor film 102 by a sputtering method, a molecular beam epitaxy method or the like to be extremely thin. An oxide superconducting film 104 made of yttrium, barium, copper oxide or the like is formed on the metal film 103 to form a base B of electron conduction type n by forming it to a thickness of 10 nanometers from nanometers by a sputtering method or a molecule. Formed by a line epitaxial method or the like to form a hole conduction type emitter E, and a p-n-p transistor is formed. Are those that form. Note that either the emitter or the collector may be made of a semiconductor film.
【０００８】図２は、本発明の他の実施例を示す超伝導
トランジスタの断面図である。すなわち、石英やセラミ
ック等から成る絶縁基板２０１上にイットリュウム・バ
リュウム・銅酸化物等から成る酸化物超伝導体膜２０２
をスパッタ法や分子線エピタキシャル法等により形成し
て正孔伝導型ｐのコレクタＣと成し、該酸化物超伝導体
膜２０２上に１ナノメータから５ナノメータ厚さ程度の
チタン酸ストロンチュウム膜やシリコン酸化膜や金属酸
化膜あるいはシリコン膜やガリュム・砒素膜等の半導体
膜等から成るトンネル膜又は量子井戸２０３を分子線エ
ピタキシャル法等により形成し、該トンネル膜又は量子
井戸２０３上にチタンー白金、アルミニュウム、チタン
ータングステン、ニオビュウムあるいはその他の金属や
合金から成る金属膜２０４をスパッタ法や分子線エピタ
キシャル法等により極めて薄く１ナノメータから１０ナ
ノメータ厚さに形成して電子伝導型ｎのベースＢと成
し、該金属膜２０４上に１ナノメータから５ナノメータ
厚さ程度のチタン酸ストロンチュウム膜やシリコン酸化
膜や金属酸化膜あるいはシリコン膜やガリュム・砒素膜
等の半導体膜等から成るトンネル膜又は量子井戸２０５
を分子線エピタキシャル法等により形成し、該トンネル
膜又は量子井戸２０５上にイットリュウム・バリュウム
・銅酸化物等から成る酸化物超伝導体膜２０６をスパッ
タ法や分子線エピタキシャル法等により形成して正孔伝
導型ｐのエミッタＥと成し、ｐ−ｎ−ｐトランジスタを
形成したものである。尚、トンネル膜又は量子井戸、２
０３及び２０５はいずれか一方のみであっても良い。更
に、エミッタあるいはコレクタのいずれか一方が半導体
膜で構成されても良い。FIG. 2 is a sectional view of a superconducting transistor showing another embodiment of the present invention. That is, an oxide superconductor film 202 made of yttrium, barium, copper oxide or the like is formed on an insulating substrate 201 made of quartz or ceramics.
Is formed by a sputtering method or a molecular beam epitaxial method to form a hole conduction type collector C, and a strontium titanate film having a thickness of about 1 to 5 nanometers is formed on the oxide superconductor film 202. Or a silicon oxide film, a metal oxide film, a silicon film, a semiconductor film such as a gallium / arsenic film, or a tunnel film or a quantum well 203 is formed by a molecular beam epitaxial method or the like, and titanium-platinum is formed on the tunnel film or the quantum well 203. , A metal film 204 made of aluminum, titanium-tungsten, niobium, or other metal or alloy is formed extremely thin to a thickness of 1 nanometer to 10 nanometers by a sputtering method, a molecular beam epitaxial method, or the like to form a base B of electron conduction type n. Formed on the metal film 204 and having a thickness of about 1 to 5 nanometers. Toronchuumu film, a silicon oxide film or a metal oxide film or a tunnel film or quantum well 205 made of a silicon film and Garyumu arsenide semiconductor film such as
Is formed by a molecular beam epitaxial method or the like, and an oxide superconductor film 206 made of yttrium, barium, copper oxide or the like is formed on the tunnel film or the quantum well 205 by a sputtering method or a molecular beam epitaxial method. A p-n-p transistor is formed by forming a hole conduction type emitter E. In addition, tunnel film or quantum well, 2
Only one of 03 and 205 may be provided. Furthermore, either the emitter or the collector may be formed of a semiconductor film.
【０００９】図３は、本発明のその他の実施例を示す超
伝導トランジスタの断面図である。すなわち、石英やセ
ラミック等から成る絶縁基板３０１上にチタンー白金、
アルミニュウム、チタンータングステン、ニオビュウム
あるいはその他の金属や合金から成る金属膜３０２をス
パッタ法や分子線エピタキシャル法等により形成して電
子伝導型ｎのコレクタＣと成し、該金属膜３０２上にイ
ットリュウム・バリュウム・銅酸化物等から成る酸化物
超伝導体膜３０３をスパッタ法や分子線エピタキシャル
法等により１０ナノメータから１００ナノメータ厚さ程
度形成して正孔伝導型ｐのベースＢと成し、該酸化物超
伝導体膜３０３上にチタンー白金、アルミニュウム、チ
タンータングステン、ニオビュウムあるいはその他の金
属や合金から成る金属膜３０４をスパッタ法や分子線エ
ピタキシャル法等により形成して電子伝導型ｎのエミッ
タＥと成し、ｎーｐ−ｎトランジスタを形成したもので
ある。尚、エミッタは半導体膜で構成されても良い。FIG. 3 is a sectional view of a superconducting transistor showing another embodiment of the present invention. That is, titanium-platinum on an insulating substrate 301 made of quartz or ceramics,
A metal film 302 made of aluminum, titanium-tungsten, niobium, or other metal or alloy is formed by a sputtering method or a molecular beam epitaxial method to form an electron conduction type n collector C, and yttrium is formed on the metal film 302. An oxide superconductor film 303 made of barium / copper oxide or the like is formed to a thickness of 10 nanometers to 100 nanometers by a sputtering method or a molecular beam epitaxial method to form a hole-conducting p-type base B. A metal film 304 made of titanium-platinum, aluminum, titanium-tungsten, niobium, or another metal or alloy is formed on the oxide superconductor film 303 by a sputtering method, a molecular beam epitaxial method, or the like to form an electron-conducting n-type emitter E. And an npn transistor is formed. The emitter may be composed of a semiconductor film.
【００１０】図４は、本発明の更にその他の実施例を示
す超伝導トランジスタの断面図である。すなわち、石英
やセラミック等から成る絶縁基板３０１上にチタンー白
金、アルミニュウム、チタンータングステン、ニオビュ
ウムあるいはその他の金属や合金から成る金属膜４０２
をスパッタ法や分子線エピタキシャル法等により形成し
て電子伝導型ｎのコレクタＣと成し、該金属膜４０２上
に１ナノメータから５ナノメータ厚さ程度のチタン酸ス
トロンチュウム膜やシリコン酸化膜や金属酸化膜あるい
はシリコン膜やガリュム・砒素膜等の半導体膜等から成
るトンネル膜又は量子井戸４０３を分子線エピタキシャ
ル法等により形成し、該トンネル膜又は量子井戸４０３
上にイットリュウム・バリュウム・銅酸化物等から成る
酸化物超伝導体膜４０４をスパッタ法や分子線エピタキ
シャル法等により１０ナノメータから１００ナノメータ
厚さ程度形成して正孔伝導型ｐのベースＢと成し、該酸
化物超伝導体膜４０４上に１ナノメータから５ナノメー
タ厚さ程度のチタン酸ストロンチュウム膜やシリコン酸
化膜や金属酸化膜あるいはシリコン膜やガリュム・砒素
膜等の半導体膜等から成るトンネル膜又は量子井戸４０
５を分子線エピタキシャル法等により形成し、該トンネ
ル膜又は量子井戸４０５上にチタンー白金、アルミニュ
ウム、チタンータングステン、ニオビュウムあるいはそ
の他の金属や合金から成る金属膜４０６をスパッタ法や
分子線エピタキシャル法等により形成して電子伝導型ｎ
のエミッタＥと成し、ｎーｐ−ｎトランジスタを形成し
たものである。尚、トンネル膜又は量子井戸、４０３及
び４０５はいずれか一方のみであっても良い。更に、エ
ミッタは半導体膜で構成されても良い。FIG. 4 is a sectional view of a superconducting transistor showing still another embodiment of the present invention. That is, a metal film 402 made of titanium-platinum, aluminum, titanium-tungsten, niobium, or another metal or alloy is formed on an insulating substrate 301 made of quartz or ceramics.
Is formed by a sputtering method or a molecular beam epitaxial method to form an electron-conducting n collector C, and a strontium titanate film or a silicon oxide film having a thickness of about 1 to 5 nanometers is formed on the metal film 402. A tunnel film or quantum well 403 formed of a metal oxide film, a silicon film, a semiconductor film such as a gallium / arsenic film, or the like is formed by a molecular beam epitaxial method or the like, and the tunnel film or quantum well 403 is formed.
An oxide superconductor film 404 made of yttrium, barium, copper oxide or the like is formed on the upper surface by a sputtering method or a molecular beam epitaxial method to a thickness of about 10 to 100 nanometers to form a hole-conducting p base B. Formed on the oxide superconductor film 404 from a semiconductor film such as a strontium titanate film, a silicon oxide film, a metal oxide film, a silicon film, a gallium / arsenic film, etc. having a thickness of about 1 to 5 nanometers. Tunnel film or quantum well 40
5 is formed by a molecular beam epitaxial method or the like, and a metal film 406 made of titanium-platinum, aluminum, titanium-tungsten, niobium or another metal or alloy is formed on the tunnel film or the quantum well 405 by a sputtering method, a molecular beam epitaxial method or the like. And electron conduction type n
And an emitter E of the above, and an npn transistor is formed. Note that only one of the tunnel film or the quantum wells 403 and 405 may be provided. Further, the emitter may be composed of a semiconductor film.
【００１１】図５は、本発明の相補型超伝導トランジス
タの一実施例を示す断面図である。すなわち、石英やセ
ラミック等から成る絶縁基板５０１上に、前記図１及び
図３の実施例に示すｐ−ｎ−ｐトランジスタとｎーｐ−
ｎトランジスタを相補型に組合せて構成したものであ
り、＋Ｖｃ1とーＶｃ2はコレクタｐ−ｎ−ｐトランジス
タとｎーｐ−ｎトランジスタ印加電圧とその極性を示し
たものであり、ｐ−ｎ−ｐトランジスタのエミッタＥは
酸化物超伝導体膜５０７、ベースＢは金属膜５０６、コ
レクタＣは酸化物超伝導体膜５０５で構成されて成り、
そしてｎーｐ−ｎトランジスタのエミッタＥは金属膜５
０４、ベースＢは酸化物超伝導体膜５０３、コレクタＣ
は金属膜５０２で構成されて成る。FIG. 5 is a sectional view showing an embodiment of the complementary superconducting transistor of the present invention. That is, the p-n-p transistor and the n-p-type shown in the embodiments of FIGS. 1 and 3 are provided on the insulating substrate 501 made of quartz, ceramics or the like.
It is constructed by combining n-transistors in a complementary type, and + Vc1 and -Vc2 indicate applied voltages to the collector p-n-p transistor and n-p-n transistor and their polarities, and p-n-p The transistor E comprises an oxide superconductor film 507, a base B comprises a metal film 506, and a collector C comprises an oxide superconductor film 505.
The emitter E of the npn transistor is the metal film 5
04, base B is an oxide superconductor film 503, collector C
Is composed of a metal film 502.
【００１２】図６は、本発明の相補型超伝導トランジス
タの他の実施例を示す断面図である。すなわち、石英や
セラミック等から成る絶縁基板６０１上に、前記図２及
び図４の実施例に示すｐ−ｎ−ｐトランジスタとｎーｐ
−ｎトランジスタを相補型に組合せて構成したものであ
り、＋Ｖｃ1とーＶｃ2はコレクタｐ−ｎ−ｐトランジス
タとｎーｐ−ｎトランジスタ印加電圧とその極性を示し
たものであり、ｐ−ｎ−ｐトランジスタのエミッタＥは
酸化物超伝導体膜６１１、ベースＢは金属膜６０９、コ
レクタＣは酸化物超伝導体膜６０７で構成されて成り、
そしてｎーｐ−ｎトランジスタのエミッタＥは金属膜６
０６、ベースＢは酸化物超伝導体膜６０４、コレクタＣ
は金属膜６０２で構成されて成り、エミッタＥとベース
Ｂ間あるいはベースＢとコレクタＣ間にはトンネル膜又
は量子井戸６１０、６０８、６０５、あるいは６０３が
形成されて成る。FIG. 6 is a sectional view showing another embodiment of the complementary superconducting transistor of the present invention. That is, the p-n-p transistor and the n-p transistor shown in the embodiments of FIGS. 2 and 4 are provided on the insulating substrate 601 made of quartz, ceramics or the like.
It is configured by combining -n transistors in a complementary type, and + Vc1 and -Vc2 indicate applied voltages to the collector p-n-p transistor and n-p-n transistor and their polarities, and p-n- The emitter E of the p-transistor is composed of an oxide superconductor film 611, the base B is composed of a metal film 609, and the collector C is composed of an oxide superconductor film 607.
The emitter E of the npn transistor is the metal film 6
06, base B is an oxide superconductor film 604, collector C
Is formed of a metal film 602, and a tunnel film or quantum well 610, 608, 605, or 603 is formed between the emitter E and the base B or between the base B and the collector C.
【００１３】尚、本実施例ではｐ−ｎ−ｐあるいはｎー
ｐ−ｎトランジスタが縦型に形成されているが、ｐ−ｎ
−ｐあるいはｎーｐ−ｎトランジスタは横型すなわちラ
テラル・トランジスタであっても良く、更に、ｐ−ｎ−
ｐトランジスタとｎーｐ−ｎトランジスタを相補型に組
み合わせる場合に図１の実施例と図４の実施例との組合
せによる構成や図２の実施例と図４の実施例との組合せ
による構成を行っても良い事は言う迄も無い。。In this embodiment, the p-n-p or n-p-n transistor is formed vertically, but the p-n-p transistor is formed.
The -p or n-pn transistor may be a lateral or lateral transistor, and further p-n-
When the p-transistor and the npn transistor are combined in a complementary manner, a configuration obtained by combining the embodiment shown in FIG. 1 and the embodiment shown in FIG. 4 or a configuration obtained by combining the embodiment shown in FIG. 2 and the embodiment shown in FIG. It goes without saying that you can go. .
【００１４】[0014]
【発明の効果】本発明により、高速且つ低消費電力の超
伝導トランジスタの製造が行い易く成る効果がある。According to the present invention, there is an effect that a superconducting transistor of high speed and low power consumption can be easily manufactured.
【図１】 本発明の一実施例を示す超伝導トランジスタ
の断面図。FIG. 1 is a cross-sectional view of a superconducting transistor showing an embodiment of the present invention.
【図２】 本発明の他の実施例を示す超伝導トランジス
タの断面図。FIG. 2 is a sectional view of a superconducting transistor showing another embodiment of the present invention.
【図３】 本発明のその他の実施例を示す超伝導トラン
ジスタの断面図。FIG. 3 is a sectional view of a superconducting transistor showing another embodiment of the present invention.
【図４】 本発明の更にその他の実施例を示す超伝導ト
ランジスタの断面図。FIG. 4 is a sectional view of a superconducting transistor showing still another embodiment of the present invention.
【図５】 本発明の相補型超伝導トランジスタの一実施
例を示す断面図。FIG. 5 is a sectional view showing an embodiment of a complementary superconducting transistor of the present invention.
【図６】 本発明の相補型超伝導トランジスタの他の実
施例を示す断面図。FIG. 6 is a cross-sectional view showing another embodiment of the complementary superconducting transistor of the present invention.
１０１、２０１、３０１、４０１、５０１・・・絶縁基
板 １０２、１０４、２０２、２０６、３０３、４０４、５
０３、５０５、５０７、６０４、６０７、６１１・・・
酸化物超伝導体膜 １０３、２０４、３０２、３０４、４０２、４０６、５
０２、５０４、５０６、６０２、６０６、６０９・・・
金属膜 ２０３、２０５、４０３、４０５、６０２、６０５、６
０８、６１０・・・トンネル膜又は量子井戸 Ｅ・・・エミッタ Ｂ・・・ベース Ｃ・・・コレクタ ｎ・・・電子伝導型 ｐ・・・正孔伝導型 ＋Ｖｃ1・・・ｐ−ｎ−ｐトランジスタのコレクタ正印
加電圧 ーＶｃ2・・・ｎーｐ−ｎトランジスタのコレクタ負印
加電圧101, 201, 301, 401, 501 ... Insulating substrate 102, 104, 202, 206, 303, 404, 5
03, 505, 507, 604, 607, 611 ...
Oxide superconductor film 103, 204, 302, 304, 402, 406, 5
02, 504, 506, 602, 606, 609 ...
Metal film 203, 205, 403, 405, 602, 605, 6
08, 610 ... Tunnel film or quantum well E ... Emitter B ... Base C ... Collector n ... Electron conduction type p ... Hole conduction type + Vc1 ... P-n-p Transistor collector positive applied voltage-Vc2 ... npn Negative collector collector applied voltage
Claims (3)
もコレクタを金属と成す事を特徴とする超伝導トランジ
スタ。1. A superconducting transistor characterized in that at least the collector of the emitter-base collector is made of metal.
もベースを金属と成す事を特徴とする超伝導トランジス
タ。2. A superconducting transistor characterized in that at least the base of the emitter-base-collector is made of metal.
もコレクタを金属と成す事を特徴とする超伝導トランジ
スタとエミッタ・ベース・コレクタの少なくともベース
を金属と成す事を特徴とする超伝導トランジスタとを相
補型に構成した事を特徴とする超伝導トランジスタ。3. A complementary type superconducting transistor characterized in that at least the collector of the emitter-base-collector is made of metal and a superconducting transistor characterized in that at least the base of the emitter-base-collector is made of metal. A superconducting transistor characterized by being configured as.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4156469A JPH065936A (en) | 1992-06-16 | 1992-06-16 | Superconducting transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4156469A JPH065936A (en) | 1992-06-16 | 1992-06-16 | Superconducting transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH065936A true JPH065936A (en) | 1994-01-14 |
Family
ID=15628433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4156469A Pending JPH065936A (en) | 1992-06-16 | 1992-06-16 | Superconducting transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065936A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403765C (en) * | 2001-02-09 | 2008-07-16 | 佳能株式会社 | Information processing apparatus and its control method, computer program and storage medium |
-
1992
- 1992-06-16 JP JP4156469A patent/JPH065936A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403765C (en) * | 2001-02-09 | 2008-07-16 | 佳能株式会社 | Information processing apparatus and its control method, computer program and storage medium |
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