JPH0660644A - メモリーデバイス - Google Patents

メモリーデバイス

Info

Publication number: JPH0660644A
Authority: JP; Japan
Prior art keywords: transistor; base; collector; emitter; memory device
Prior art date: 1992-08-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP4229260A

Other languages

English (en)

Japanese (ja)

Inventor

Uonwarauipatsuto Uiwatsuto

ウィワット・ウォンワラウィパット

Ikou You

維康楊

Kokuriyou Kotobuki

国梁寿

Sunao Takatori

直高取

Makoto Yamamoto

山本　　誠

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

TAKAYAMA KK

Sharp Corp

Original Assignee

TAKAYAMA KK

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-08-05

Filing date

1992-08-05

Publication date

1994-03-04

1992-08-05 Application filed by TAKAYAMA KK, Sharp Corp filed Critical TAKAYAMA KK

1992-08-05 Priority to JP4229260A priority Critical patent/JPH0660644A/ja

1993-08-02 Priority to US08/100,176 priority patent/US5477483A/en

1993-08-02 Priority to KR1019930014939A priority patent/KR940004647A/ko

1993-08-04 Priority to EP93112518A priority patent/EP0582294A2/en

1994-03-04 Publication of JPH0660644A publication Critical patent/JPH0660644A/ja

1995-03-01 Priority to US08/396,618 priority patent/US5537348A/en

Status Pending legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)

JP4229260A 1992-08-05 1992-08-05 メモリーデバイス Pending JPH0660644A (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP4229260A JPH0660644A (ja)	1992-08-05	1992-08-05	メモリーデバイス
US08/100,176 US5477483A (en)	1992-08-05	1993-08-02	Memory device
KR1019930014939A KR940004647A (ko)	1992-08-05	1993-08-02	메모리장치
EP93112518A EP0582294A2 (en)	1992-08-05	1993-08-04	Memory device
US08/396,618 US5537348A (en)	1992-08-05	1995-03-01	Memory device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4229260A JPH0660644A (ja)	1992-08-05	1992-08-05	メモリーデバイス

Publications (1)

Publication Number	Publication Date
JPH0660644A true JPH0660644A (ja)	1994-03-04

Family

ID=16889331

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4229260A Pending JPH0660644A (ja)	1992-08-05	1992-08-05	メモリーデバイス

Country Status (4)

Country	Link
US (2)	US5477483A (2)
EP (1)	EP0582294A2 (2)
JP (1)	JPH0660644A (2)
KR (1)	KR940004647A (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IL140183A (en) *	2000-12-07	2007-03-08	Rafael Advanced Defense Sys	Method of operation of an air-to-air missile and a compatible missile with autonomous or semi-autonomous activity
US6781459B1 (en)	2003-04-24	2004-08-24	Omega Reception Technologies, Inc.	Circuit for improved differential amplifier and other applications
US9269422B2 (en) *	2013-09-30	2016-02-23	Simon Peter Tsaoussis	Two transistor ternary random access memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3473149A (en) *	1966-05-02	1969-10-14	Sylvania Electric Prod	Memory drive circuitry
JPS51120141A (en) *	1975-04-15	1976-10-21	Toshiba Corp	Memory circuit
WO1980000761A1 (fr) *	1978-10-03	1980-04-17	Tokyo Shibaura Electric Co	Systeme de memoire a semi-conducteur
US4387445A (en) *	1981-02-24	1983-06-07	International Business Machines Corporation	Random access memory cell
US4455625A (en) *	1981-02-24	1984-06-19	International Business Machines Corporation	Random access memory cell
JPS6083291A (ja) *	1983-10-13	1985-05-11	Nec Corp	半導体メモリ
US4675846A (en) *	1984-12-17	1987-06-23	International Business Machines Corporation	Random access memory
WO1986007487A1 (en) *	1985-06-07	1986-12-18	Anamartic Limited	Electrical data storage elements
US4943740A (en) *	1988-04-12	1990-07-24	Zdzislaw Gulczynski	Ultra fast logic
US4922411A (en) *	1988-12-27	1990-05-01	Atmel Corporation	Memory cell circuit with supplemental current
US5117391A (en) *	1990-06-04	1992-05-26	Motorola, Inc.	Bipolar memory cell array biasing technique with forward active PNP load cell

1992
- 1992-08-05 JP JP4229260A patent/JPH0660644A/ja active Pending
1993
- 1993-08-02 US US08/100,176 patent/US5477483A/en not_active Expired - Fee Related
- 1993-08-02 KR KR1019930014939A patent/KR940004647A/ko not_active Withdrawn
- 1993-08-04 EP EP93112518A patent/EP0582294A2/en not_active Withdrawn
1995
- 1995-03-01 US US08/396,618 patent/US5537348A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0582294A2 (en)	1994-02-09
US5537348A (en)	1996-07-16
US5477483A (en)	1995-12-19
EP0582294A3 (2)	1994-04-06
KR940004647A (ko)	1994-03-15

Publication	Publication Date	Title
EP0344894A3 (en)	1992-04-08	Memory cell
KR960042752A (ko)	1996-12-21	낮은 전원전압 동작에서도 빠르고 안정된 동작이 가능한 스태틱형 반도체기억장치
JPH07109864B2 (ja)	1995-11-22	スタティックｒａｍ
GB1535859A (en)	1978-12-13	Semiconductor memory cells
GB1065702A (en)	1967-04-19	Storage cell and memory incorporating such cells
EP0019381A1 (en)	1980-11-26	Semiconductor memory device with address signal level setting
JPH0660644A (ja)	1994-03-04	メモリーデバイス
KR850002636A (ko)	1985-05-15	전하전송형 전압증폭부를 가진 반도체 메모리
JPS5870493A (ja)	1983-04-26	半導体メモリ装置
JPS5855597B2 (ja)	1983-12-10	双安定半導体メモリセル
JPS582435B2 (ja)	1983-01-17	キオクカイロ
JPS61165882A (ja)	1986-07-26	半導体メモリ回路
JP3071434B2 (ja)	2000-07-31	半導体メモリ
JPH06164331A (ja)	1994-06-10	ラッチ回路
RU1791849C (ru)	1993-01-30	Элемент пам ти
JPS6225797Y2 (2)	1987-07-01
JPS5827918B2 (ja)	1983-06-13	メモリ・セル回路
JPS6252787A (ja)	1987-03-07	記憶装置
JPS62145598A (ja)	1987-06-29	記憶装置
KR0182011B1 (ko)	1999-04-15	출력 데이타 안정화를 위한 라이트 드라이버
JPS61110393A (ja)	1986-05-28	半導体記憶装置の記憶保持回路
JPS6079597A (ja)	1985-05-07	半導体メモリ装置
JPS6220634B2 (2)	1987-05-08
SU1064318A1 (ru)	1983-12-30	Элемент пам ти дл накопител с произвольной выборкой
JPH0465741A (ja)	1992-03-02	携帯型記憶装置