JPH07105366B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH07105366B2 JPH07105366B2 JP16925086A JP16925086A JPH07105366B2 JP H07105366 B2 JPH07105366 B2 JP H07105366B2 JP 16925086 A JP16925086 A JP 16925086A JP 16925086 A JP16925086 A JP 16925086A JP H07105366 B2 JPH07105366 B2 JP H07105366B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- semiconductor device
- electrode
- plating film
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体装置の製造方法に関する。The present invention relates to a method for manufacturing a semiconductor device.
［従来の技術］ 従来、半導体装置は、例えば第４図に示すような電解メ
ッキ槽を用いて半導体基板１の面に電極メッキ膜を形成
し、この電極メッキ膜をパターニングして所定の電極と
することにより製造されている。半導体基板１は、電解
メッキ槽２内の電解液３中に陰極として浸漬されてい
る。電解液３内には、半導体基板１の面に対向するよう
にして陽極４が浸漬されている。[Prior Art] Conventionally, in a semiconductor device, an electrode plating film is formed on the surface of the semiconductor substrate 1 by using an electrolytic plating bath as shown in FIG. 4, and the electrode plating film is patterned to form a predetermined electrode. It is manufactured by The semiconductor substrate 1 is immersed as a cathode in the electrolytic solution 3 in the electrolytic plating bath 2. An anode 4 is immersed in the electrolytic solution 3 so as to face the surface of the semiconductor substrate 1.
而して、クリップ５を介して電源６により半導体基板１
と陽極４間に所定の電圧を印加し、電解メッキによって
半導体基板１の面に金属を折出させて電極メッキ膜を形
成する。次いで、電極メッキ膜をパターニングして所定
の電極を形成することにより半導体装置を得る。Then, the semiconductor substrate 1 is powered by the power source 6 via the clip 5.
A predetermined voltage is applied between the positive electrode 4 and the positive electrode 4, and metal is extruded on the surface of the semiconductor substrate 1 by electrolytic plating to form an electrode plating film. Next, a semiconductor device is obtained by patterning the electrode plating film and forming predetermined electrodes.
［発明が解決しようとする問題点］ しかしながら、上述のようにして半導体装置を得るもの
では、半導体基板１の周辺領域で電流密度が大きくな
り、他の領域に比べて電極メッキ膜の膜厚が著しく大き
くなる。このような電極メッキ膜から作られた電極は、
当然その厚さが不均一である。また、このようにして形
成された電極と半導体基板１の膨張係数が異なるため、
電極が剥れたり或は半導体基板１に欠陥が発生したりし
易い。その結果、半導体装置の機械的特性及び電気的特
性を十分に向上できない問題があった。[Problems to be Solved by the Invention] However, in the semiconductor device obtained as described above, the current density is large in the peripheral region of the semiconductor substrate 1, and the film thickness of the electrode plating film is smaller than that in other regions. Noticeably larger. An electrode made from such an electrode plating film is
Naturally, the thickness is not uniform. In addition, since the expansion coefficient of the electrode thus formed and the semiconductor substrate 1 is different,
The electrodes are easily peeled off or a defect is generated in the semiconductor substrate 1. As a result, there is a problem that the mechanical and electrical characteristics of the semiconductor device cannot be sufficiently improved.
［問題点を解決するための手段］ 本発明は、所定の電解液中に半導体基板を陰極として浸
漬し、該半導体基板の面に対向するようにして陽極を浸
漬すると共に、該半導体基板を含む平面内に該半導体基
板と同心円状の配置で補助陰極を浸漬し、前記陽極と該
補助陰極及び該半導体基板間に所定の電圧を印加して該
半導体基板の面に電極メッキ膜を形成することを特徴と
する半導体装置の製造方法である。[Means for Solving Problems] The present invention includes immersing a semiconductor substrate as a cathode in a predetermined electrolytic solution, immersing an anode so as to face a surface of the semiconductor substrate, and including the semiconductor substrate. An auxiliary cathode is immersed in a plane in a concentric arrangement with the semiconductor substrate, and a predetermined voltage is applied between the anode, the auxiliary cathode and the semiconductor substrate to form an electrode plating film on the surface of the semiconductor substrate. And a method for manufacturing a semiconductor device.
［作用］ 本発明に係る半導体装置の製造方法によれば、電解メッ
キ槽内に陰極である半導体基板と同心円状に補助陰極を
配置して陽極間に所定の電圧を印加し、半導体基板の面
に電極メッキ膜を形成する。この電極メッキ膜をパター
ニングして所定の電極とするので、得られた電極は極め
て均一な膜厚を有する。その結果、機械的特性及び電気
的特性に優れた半導体装置を容易に得ることができる。[Operation] According to the method for manufacturing a semiconductor device of the present invention, the auxiliary cathode is arranged concentrically with the semiconductor substrate, which is the cathode, in the electrolytic plating tank, and a predetermined voltage is applied between the anodes, so that the surface of the semiconductor substrate is An electrode plating film is formed on. Since the electrode plating film is patterned to form a predetermined electrode, the obtained electrode has an extremely uniform film thickness. As a result, a semiconductor device having excellent mechanical characteristics and electrical characteristics can be easily obtained.
［実施例］ 以下、本発明の実施例について図面を参照して説明す
る。第１図は、本発明方法にて使用する電解メッキ槽の
構成を示す説明図である。なお、この実施例は、本発明
を整流素子からなる半導体装置の製造に適用したもので
ある。図中11は、電解メッキ槽12内の電解液13中に陰極
として浸漬された半導体基板である。半導体基板11は、
直径2.5インチ、比抵抗15〜20Ω−cm、厚さ250μのＮ形
シリコン基板で形成されている。半導体基板11内には所
定の深さで接合が形成されている。電解液13は、硫酸ニ
ッケルアンモニウム10重量部、ホウ酸１重量部、塩化ア
ンモニウム１重量部に純水88重量部の比率で混合した水
溶液から構成されている。電解液13内には、半導体基板
11の面に対向してNi板からなる陽極14が浸漬されてい
る。また、電解液13内には、第２図に示すようなリング
状の補助陰極15が、半導体基板11を含む平面内に半導体
基板11を同心円状の配置で浸漬されている。補助陰極15
は、半導体基板11と同質の比抵抗が15〜20Ω−cmのシリ
コンで形成され、肉厚ｔが1mm、内径Ｄ1が66mm、外径Ｄ
2が76mmに設定され、半導体基板11との間に約2mmの隙間
を設けて浸漬されている。半導体基板11及び補助陰極15
と陽極14間には、電源16a,16bにより所定の電圧が印加
されるようになっている。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view showing the constitution of an electrolytic plating bath used in the method of the present invention. In this embodiment, the present invention is applied to manufacture of a semiconductor device including a rectifying element. Reference numeral 11 in the drawing denotes a semiconductor substrate immersed as a cathode in an electrolytic solution 13 in an electrolytic plating tank 12. The semiconductor substrate 11 is
The N-type silicon substrate has a diameter of 2.5 inches, a specific resistance of 15 to 20 Ω-cm, and a thickness of 250 μ. A bond is formed in the semiconductor substrate 11 at a predetermined depth. The electrolytic solution 13 is composed of an aqueous solution obtained by mixing 10 parts by weight of nickel ammonium sulfate, 1 part by weight of boric acid, and 1 part by weight of ammonium chloride in a ratio of 88 parts by weight of pure water. In the electrolytic solution 13, the semiconductor substrate
An anode 14 made of a Ni plate is immersed so as to face the surface of 11. A ring-shaped auxiliary cathode 15 as shown in FIG. 2 is immersed in the electrolytic solution 13 in a concentric arrangement of the semiconductor substrate 11 in a plane including the semiconductor substrate 11. Auxiliary cathode 15
Is formed of silicon having the same specific resistance as the semiconductor substrate 11 and 15 to 20 Ω-cm. The thickness t is 1 mm, the inner diameter D 1 is 66 mm, and the outer diameter D is
2 is set to 76 mm, and it is dipped in the semiconductor substrate 11 with a gap of about 2 mm. Semiconductor substrate 11 and auxiliary cathode 15
A predetermined voltage is applied between the anode 14 and the anode 14 by power supplies 16a and 16b.
而して、陽極14と半導体基板11間に１〜4Aの電流を約２
分間通電し、半導体基板11の面に電解メッキにより厚さ
0.5μのNiを折出させ電極メッキ膜を形成した。次い
で、電極メッキ膜を形成した半導体基板11を電解メッキ
槽12から取出し、周知の写真食刻法にて電極メッキ膜を
パターニングして電極を形成し、半導体装置を得た。こ
の場合、電極メッキ膜の膜厚は第３図に特性線Ｉにて示
す如く、半導体基板11の面全面に亘って極めて均一なも
のであった。得られた半導体装置の電極の厚さも均一な
ものであり、半導体装置は機械的特性及び電気的特性に
優れたものであることが実験的に確認された。Thus, a current of 1 to 4 A between the anode 14 and the semiconductor substrate 11 is about 2
Energize for a minute, and the thickness of the surface of the semiconductor substrate 11 is electrolytically plated.
0.5 μ of Ni was projected to form an electrode plating film. Next, the semiconductor substrate 11 having the electrode plating film formed thereon was taken out from the electrolytic plating bath 12, and the electrode plating film was patterned by a well-known photo-etching method to form electrodes, thereby obtaining a semiconductor device. In this case, the film thickness of the electrode plating film was extremely uniform over the entire surface of the semiconductor substrate 11, as indicated by the characteristic line I in FIG. It was experimentally confirmed that the thickness of the electrodes of the obtained semiconductor device was also uniform, and the semiconductor device had excellent mechanical properties and electrical properties.
因みに、第４図に示した従来の方法にて形成された電極
メッキ膜の膜厚は第３図に特性線IIにて併記したよう
に、半導体基板１の周辺領域で著しく厚肉のものになっ
ていることが判った。Incidentally, the thickness of the electrode plating film formed by the conventional method shown in FIG. 4 is remarkably thick in the peripheral region of the semiconductor substrate 1 as shown in FIG. 3 along the characteristic line II. It turns out that it has become.
なお、補助陰極15は、銅やニッケル等の金属で形成して
も良く、又、その形状は半導体基板11の性状等に応じて
適宜設定するのが好ましい。The auxiliary cathode 15 may be formed of a metal such as copper or nickel, and its shape is preferably set appropriately according to the properties of the semiconductor substrate 11 and the like.
［発明の効果］ 以上説明した如く、本発明に係る半導体装置の製造方法
によれば、半導体基板上に極めて均一な膜厚で電極を形
成して機械的特性及び電気的特性に優れた半導体装置を
容易に得ることができるものである。[Effects of the Invention] As described above, according to the method for manufacturing a semiconductor device of the present invention, a semiconductor device having excellent mechanical properties and electrical properties by forming electrodes with a very uniform film thickness on a semiconductor substrate. Can be easily obtained.
第１図は、本発明方法にて使用する電解メッキ槽の構成
を示す説明図、第２図は、補助陰極を示す説明図、第３
図は、電極メッキ膜の厚さと半導体基板上の位置との関
係を示す特性図、第４図は、従来の方法にて使用する電
解メッキ槽の構成を示す説明図である。 11……半導体基板、12……電解メッキ槽、13……電解
液、14……陽極、15……補助陰極、16a,16b……電源。FIG. 1 is an explanatory view showing the constitution of an electrolytic plating bath used in the method of the present invention, FIG. 2 is an explanatory view showing an auxiliary cathode, and FIG.
FIG. 4 is a characteristic diagram showing the relationship between the thickness of the electrode plating film and the position on the semiconductor substrate, and FIG. 4 is an explanatory diagram showing the configuration of the electrolytic plating bath used in the conventional method. 11 …… Semiconductor substrate, 12 …… Electrolytic plating bath, 13 …… Electrolyte, 14 …… Anode, 15 …… Auxiliary cathode, 16a, 16b …… Power supply.
Claims (1)
浸漬し、該半導体基板の面に対向するようにして陽極を
浸漬すると共に、該半導体基板を含む平面内に該半導体
基板と同心円状の配置で補助陰極を浸漬し、前記陽極と
該補助陰極及び該半導体基板間に所定の電圧を印加して
該半導体基板の面に電極メッキ膜を形成することを特徴
とする半導体装置の製造方法。1. A semiconductor substrate is immersed as a cathode in a predetermined electrolytic solution, and an anode is immersed so as to face the surface of the semiconductor substrate, and the semiconductor substrate is concentric with a plane including the semiconductor substrate. A method of manufacturing a semiconductor device, comprising immersing an auxiliary cathode in the above arrangement and applying a predetermined voltage between the anode, the auxiliary cathode and the semiconductor substrate to form an electrode plating film on the surface of the semiconductor substrate. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16925086A JPH07105366B2 (en) | 1986-07-18 | 1986-07-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16925086A JPH07105366B2 (en) | 1986-07-18 | 1986-07-18 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6325919A JPS6325919A (en) | 1988-02-03 |
| JPH07105366B2 true JPH07105366B2 (en) | 1995-11-13 |
Family
ID=15883026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16925086A Expired - Lifetime JPH07105366B2 (en) | 1986-07-18 | 1986-07-18 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105366B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4936812B2 (en) * | 2006-07-21 | 2012-05-23 | 株式会社日本色材工業研究所 | Cosmetic molding apparatus and molding method |
-
1986
- 1986-07-18 JP JP16925086A patent/JPH07105366B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325919A (en) | 1988-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |