JPH0733432B2 - Epoxy resin molding material for semiconductor encapsulation - Google Patents
Epoxy resin molding material for semiconductor encapsulationInfo
- Publication number
- JPH0733432B2 JPH0733432B2 JP1010424A JP1042489A JPH0733432B2 JP H0733432 B2 JPH0733432 B2 JP H0733432B2 JP 1010424 A JP1010424 A JP 1010424A JP 1042489 A JP1042489 A JP 1042489A JP H0733432 B2 JPH0733432 B2 JP H0733432B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- molding material
- moisture resistance
- semiconductor
- semiconductor encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 239000003822 epoxy resin Substances 0.000 title claims description 31
- 229920000647 polyepoxide Polymers 0.000 title claims description 31
- 238000005538 encapsulation Methods 0.000 title claims description 26
- 239000012778 molding material Substances 0.000 title claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 8
- 229920003986 novolac Polymers 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000005350 fused silica glass Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000013329 compounding Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、半導体封止用エポキシ樹脂成形材料に関す
るものである。さらに詳しくは、この発明は、成形性お
よび耐湿性に優れた半導体封止用エポキシ樹脂成形材料
に関するものである。Description: TECHNICAL FIELD The present invention relates to an epoxy resin molding material for semiconductor encapsulation. More specifically, the present invention relates to an epoxy resin molding material for semiconductor encapsulation which has excellent moldability and moisture resistance.
（従来の技術） 半導体素子の封止用成形材料としては、従来より耐湿
性、耐熱性等の性能や、価格などの点においてエポキシ
樹脂を主成分とするものが広く使用されているが、近年
では半導体素子の高密度化、高集積化によりパッケージ
の超小型化、薄型化が進み、樹脂成形材料の成形性、耐
湿性の向上が重要な課題となっている。(Prior Art) As a molding material for encapsulating a semiconductor element, a material containing an epoxy resin as a main component has been widely used from the viewpoint of performance such as moisture resistance and heat resistance and price. Therefore, the miniaturization and thinning of packages are progressing due to the high density and high integration of semiconductor elements, and improvement of moldability and moisture resistance of resin molding materials has become an important issue.
成形性としては、半導体封止の成形時にバリが生じない
こと等が要求され、この成形性の向上を図るために従来
よりリン系（TPP等）または第三級アミン系（DBU等）等
の硬化助剤が使用されてきている。As for moldability, it is required that burrs do not occur during molding of semiconductor encapsulation. In order to improve this moldability, phosphorus type (TPP etc.) or tertiary amine type (DBU etc.) etc. Curing aids have been used.
また、耐湿性の向上を図るためには、半導体素子と封止
樹脂との間に発生する熱応力を低減させることが必要で
あることから、膨脹係数や弾性率を低下させることが種
々の方法により試みられてきている。たとえば、官能基
としてエポキシ基を有する変性シリコーンオイル等のシ
リコーン系低応力改質剤を耐湿性付与剤として添加する
ことなどが試みられている。Further, in order to improve the moisture resistance, it is necessary to reduce the thermal stress generated between the semiconductor element and the sealing resin. Therefore, it is possible to reduce the expansion coefficient and the elastic modulus by various methods. Have been tried by. For example, it has been attempted to add a silicone-based low stress modifier such as a modified silicone oil having an epoxy group as a functional group as a moisture resistance-imparting agent.
（発明が解決しようとする課題） しかしながら、成形性と耐湿性の双方の向上を図るた
め、これまでの硬化助剤と耐湿性付与剤とを併用して
も、耐湿性については良好となるものの、成形性は十分
に向上したものとならず、成形時に多量のバリが発生し
ていた。そのため、これまでの封止用成形材料は、超ミ
ニパッケージ用の封止に十分に適用できるものとはなっ
ていないのが実情である。(Problems to be Solved by the Invention) However, in order to improve both moldability and moisture resistance, even if a conventional curing aid and moisture resistance-imparting agent are used in combination, the moisture resistance is good. However, the moldability was not sufficiently improved, and a large amount of burr was generated during molding. Therefore, the encapsulating molding materials heretofore have not been sufficiently applicable to encapsulation for ultra-mini packages.
この発明は以上の通りの事情に鑑みてなされたものであ
り、従来の半導体素子の封止用成形材料の欠点を改善
し、良好な耐湿性を有し、かつ、バリの発生量が極めて
少なく、成形性にも優れ、超ミニパッケージの封止にも
好適に使用することのできる半導体封止用成形材料を提
供することを目的としている。This invention has been made in view of the circumstances as described above, and improves the defects of the conventional molding material for encapsulating semiconductor elements, has good moisture resistance, and has a very small amount of burr. It is an object of the present invention to provide a molding material for semiconductor encapsulation, which has excellent moldability and can be suitably used for encapsulation of ultra-mini packages.
（課題を解決するための手段） この発明は、上記の課題を解決するものとして、エポキ
シ樹脂系成形材料であって、エポキシ樹脂とその硬化剤
としてのフェノールノボラック樹脂および結晶シリカも
しくは溶融シリカを含有する組成物について、硬化助剤
として６−ジブチルアミノ−1,8−ジアザビシクロ（5,
4,0）ウンデセン−７またはその誘導体を配合してなる
ことを特徴とする半導体封止用エポキシ樹脂成形材料を
提供する。(Means for Solving the Problems) As a solution to the above problems, the present invention is an epoxy resin-based molding material, which contains an epoxy resin and a phenol novolac resin as a curing agent thereof, and crystalline silica or fused silica. For the composition to be treated, 6-dibutylamino-1,8-diazabicyclo (5,
Provided is an epoxy resin molding material for semiconductor encapsulation, which comprises 4,0) undecene-7 or a derivative thereof.
すなわち、この発明の半導体封止用成形材料は、硬化助
剤として、６−ジブチルアミノ−1,8−ジアザビシクロ
（5,4,0）ウンデセン−７またはそのアルキル、アルケ
ニル、アミノ基置換等の誘導体を含有することにより耐
湿性と成形性の双方を向上させたものとなっている。That is, the molding compound for semiconductor encapsulation of the present invention comprises, as a curing aid, 6-dibutylamino-1,8-diazabicyclo (5,4,0) undecene-7 or a derivative thereof such as an alkyl group, an alkenyl group or an amino group-substituted group. By including the above, both the moisture resistance and the moldability are improved.
この６−ジブチルアミノ−1,8−ジアザビシクロ（5,4,
0）ウンデセン−７類（DBA−DBU）は、エポキシ樹脂の
硬化触媒としては公知（特開昭62−16484号公報）のも
のであるが、このものを半導体封止用エポキシ樹脂成形
材料に配合した例はなく、その使用に際しての諸要件に
ついては全く知られていないのが実情である。This 6-dibutylamino-1,8-diazabicyclo (5,4,
0) Undecene-7 compounds (DBA-DBU) are known as curing catalysts for epoxy resins (Japanese Patent Laid-Open No. 62-16484), but these are compounded in epoxy resin molding materials for semiconductor encapsulation. The fact is that the requirements for using it have not been known at all.
実際、半導体封止材は、優れた特性を有し、かつ、その
成形も精密さを要求されることから、たとえ公知の触媒
であったとしても、無条件にこれを使用することはでき
なかった。また、近年の超ミニパッケージ用の封止のた
めには、バリの発生のない優れた成形性が要求されてい
ることから、特有の配合成分との組合わせにおいて、こ
の硬化助剤としてのDBA−DBUの使用を適切なものとする
ことが必須ともなる。In fact, the semiconductor encapsulant has excellent properties, and its molding is required to be precise. Therefore, even if it is a known catalyst, it cannot be unconditionally used. It was In addition, since excellent moldability without burrs is required for the encapsulation of ultra-mini packages in recent years, in combination with a specific compounding component, DBA as this curing aid is required. -Proper use of DBU is also essential.
そのため、この発明においては、上記の通り、 １）エポキシ樹脂 ２）硬化剤としてのノボラック型フェノール樹脂 ３）充填材としての結晶シリカまたは溶融シリカ の使用が必須となる。Therefore, in the present invention, as described above, it is essential to use 1) epoxy resin 2) novolac type phenol resin as a curing agent 3) crystalline silica or fused silica as a filler.
この場合のDBA−DBUの配合量は、上記の成形組成物全体
量の0.05〜５重量％とするのが好ましい。In this case, the compounding amount of DBA-DBU is preferably 0.05 to 5% by weight based on the total amount of the molding composition.
添加配合量が少ないと、耐湿性が乏り、成形性も満足で
きるものとならない。過剰に添加しても大きな硬化はな
く不経済となる。If the addition amount is too small, the moisture resistance will be poor and the moldability will not be satisfactory. Even if added in excess, it will be uneconomical without significant curing.
この発明の半導体封止用成形材料において、ベース樹脂
としては、耐湿性、耐熱性等の性能の良好なものとして
知られている従来公知のエポキシ樹脂等を適宜使用する
ことができる。このようなエポキシ樹脂としては、たと
えば、ノボラック型エポキシ樹脂、ビスフェノールＡ型
エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、脂環
式エポキシ樹脂、ハロゲン化エポキシ樹脂などを例示す
ることができる。In the molding material for semiconductor encapsulation of the present invention, as the base resin, a conventionally known epoxy resin known to have good performance such as moisture resistance and heat resistance can be appropriately used. Examples of such epoxy resin include novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, alicyclic epoxy resin, halogenated epoxy resin and the like.
また、硬化剤としてのノボラック型フェノール樹脂も、
従来より使用されているものを用いることができるが、
特に、ノボラック型フェノール樹脂としては、１分子中
に２個以上のフェノール性水酸基を有するものを好適な
硬化剤として例示することができる。In addition, novolac type phenolic resin as a curing agent,
You can use the one that has been used conventionally,
In particular, as the novolac type phenol resin, one having two or more phenolic hydroxyl groups in one molecule can be exemplified as a suitable curing agent.
さらにこの発明においては、封止用樹脂には結晶性シリ
カもしくは溶融シリカ（通常のもの等の）を配合する。
このシリカの配合がない場合には、半導体封止用成形材
としてのこの発明の目的は実現することができない。も
ちろん、特性を損わない限り、他の充填剤、低応力改質
剤、難燃剤、硬化促進剤、離型剤、着色剤などを半導体
素子の種類、用途に応じて適宜配合することができる。Further, in this invention, crystalline silica or fused silica (such as ordinary one) is blended with the sealing resin.
Without this silica compounding, the object of the present invention as a molding material for semiconductor encapsulation cannot be realized. Of course, other fillers, low-stress modifiers, flame retardants, curing accelerators, release agents, colorants and the like can be appropriately blended according to the type and application of the semiconductor element as long as the characteristics are not impaired. .
また、この発明の半導体封止用成形材料を用いて半導体
を封止する方法としては、従来と同様の方法を封止する
半導体素子等に応じて適宜採用することができる。Moreover, as a method of sealing a semiconductor using the molding compound for semiconductor sealing of the present invention, a method similar to the conventional method can be appropriately adopted depending on a semiconductor element or the like.
エポキシ樹脂等の組成物の配合割合については、通常の
ものを基準とし、より好ましくは、エポキシ樹脂100重
量部に対し、硬化剤ノボラックフェノール樹脂30〜80重
量部、結晶シリカまたは溶融シリカ10〜100重量部程度
とする。Regarding the blending ratio of the composition such as epoxy resin, based on the usual one, more preferably, relative to 100 parts by weight of the epoxy resin, the curing agent novolac phenol resin 30 to 80 parts by weight, crystalline silica or fused silica 10 to 100. It is about parts by weight.
また、この発明の半導体封止用成形材料を用いて半導体
を封止する方法としては、従来と同様の方法を封止する
半導体素子等に応じて適宜採用することができる。Moreover, as a method of sealing a semiconductor using the molding compound for semiconductor sealing of the present invention, a method similar to the conventional method can be appropriately adopted depending on a semiconductor element or the like.
（作 用） この発明の半導体封止用成形材料は、特有の組成物に対
して、硬化助剤として、６−ジブチルアミノ−1,8−ジ
アザビシクロ（5,4,0）ウンデセン−７類を特定の割合
で配合するので、半導体素子の封止の耐湿性を優れたも
のにすると共に、その成形性も著しく向上させることが
できる。(Operation) The molding compound for semiconductor encapsulation of the present invention comprises 6-dibutylamino-1,8-diazabicyclo (5,4,0) undecene-7 as a curing aid for a unique composition. Since it is mixed in a specific ratio, the moisture resistance of the sealing of the semiconductor element can be made excellent and the moldability thereof can be remarkably improved.
（実施例） 以下、実施例を示して、この発明の半導体封止用成形材
料を具体的に説明する。(Example) Hereinafter, the molding material for semiconductor encapsulation of the present invention will be specifically described with reference to examples.
実施例１ クレーゾールノボラック型エポキシ樹脂100重量部にフ
ェノールノボラック系硬化剤50重量部、結晶シリカ40重
量部を配合し、これに硬化助剤として、６−ジブチルア
ミノ−1,8−ジアザビシクロ（5,4,0）ウンデセン−７
（DBA−DBU）をその全体量の1wt％添加して半導体封止
用エポキシ樹脂成形材料を製造した。Example 1 100 parts by weight of a cresol novolac type epoxy resin was mixed with 50 parts by weight of a phenol novolac-based curing agent and 40 parts by weight of crystalline silica, and 6-dibutylamino-1,8-diazabicyclo (5 , 4,0) Undecen-7
(DBA-DBU) was added at 1 wt% of the total amount to manufacture an epoxy resin molding material for semiconductor encapsulation.
得られた半導体封止用エポキシ樹脂成形材料により半導
体素子を封止し、成形性と耐湿性を評価した。この場
合、複合耐湿性と成形性を評価する半導体素子として
は、耐湿性評価用の標準素子を用い、成形性は20μｍの
スリットをしみ出すバリの最大距離（mm）によって評価
し、また、耐湿性はPCTテスト（2atm,151℃,100RH％,50
0時間）の不良数によって評価した。A semiconductor element was sealed with the obtained epoxy resin molding material for semiconductor sealing, and moldability and moisture resistance were evaluated. In this case, a standard element for moisture resistance evaluation is used as the semiconductor element for evaluating the composite moisture resistance and the moldability, and the moldability is evaluated by the maximum distance (mm) of the burr exuding the slit of 20 μm. PCT test (2atm, 151 ℃, 100RH%, 50
It was evaluated by the number of defects in 0 hours.
これらの評価結果は表１に示す通りであった。The evaluation results are shown in Table 1.
後述の比較例との対比から明らかなように、この実施例
の封止材は、これまでにない優れたバリ特性と十分な耐
湿性を示した。As is clear from a comparison with Comparative Examples described below, the encapsulant of this example exhibited unprecedented excellent burr characteristics and sufficient moisture resistance.
実施例２ 硬化助剤としてDBA−DBUを4wt％添加し、実施例１と同
様に半導体封止用エポキシ樹脂成形材料を製造し、半導
体素子を封止してその性質を評価した。Example 2 4 wt% of DBA-DBU was added as a curing aid, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1, a semiconductor element was encapsulated, and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この実施例の封止材についても、実施例１と同様に、極
めて優れたバリ特性と耐湿性を示した。The sealing material of this example also showed extremely excellent burr characteristics and moisture resistance, as in Example 1.
実施例３ 実施例１において結晶シリカの代わりに溶融シリカを配
合した。同様に優れた特性が得られた。Example 3 Instead of crystalline silica in Example 1, fused silica was blended. Excellent properties were obtained as well.
比較例１ 硬化助剤としてTPPを使用し、実施例１と同様に半導体
封止用エポキシ樹脂成形材料を製造し、半導体素子を封
止してその性質を評価した。Comparative Example 1 Using TPP as a curing aid, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1, and a semiconductor element was encapsulated to evaluate its properties.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止材においては、耐湿性が著しく低下し
ており、また、バリ特性も実施例に比べて劣っていた。In the sealing material of this comparative example, the moisture resistance was remarkably reduced, and the burr characteristics were also inferior to those of the examples.
比較例２ 硬化助剤としてDBUを使用し、実施例１と同様に半導体
封止用エポキシ樹脂成形材料を製造し、半導体素子を封
止してその性質を評価した。Comparative Example 2 Using DBU as a curing aid, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1, and a semiconductor element was encapsulated to evaluate its properties.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止材においても耐湿性が著しく低下して
おり、また、バリ特性も十分なものではなかった。Also in the sealing material of this comparative example, the moisture resistance was remarkably reduced, and the burr characteristics were not sufficient.
比較例３ 硬化助剤としてTPPを使用し、さらに耐湿性付与剤とし
てエポキシ変性シリコンオイルを添加して実施例１と同
様に半導体封止用エポキシ樹脂成形材料を製造し、半導
体素子を封止してその性質を評価した。Comparative Example 3 TPP was used as a curing aid, and epoxy-modified silicone oil was added as a moisture resistance-imparting agent to produce an epoxy resin molding material for semiconductor encapsulation in the same manner as in Example 1, and encapsulating a semiconductor element. The property was evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止材においては、耐湿性は良好であった
が、バリ特性が著しく劣っていた。The encapsulant of this comparative example had good moisture resistance, but was significantly inferior in burr characteristics.
比較例４ 硬化助剤としてDBUを使用し、さらに耐湿性付与剤とし
てエポキシ変性シリコンオイルを添加して実施例１と同
様に半導体封止用エポキシ樹脂成形材料を製造し、半導
体素子を封止してその性質を評価した。 Comparative Example 4 A DBU was used as a curing aid, and an epoxy-modified silicone oil was added as a moisture resistance-imparting agent to produce an epoxy resin molding material for semiconductor encapsulation in the same manner as in Example 1 to encapsulate a semiconductor element. The property was evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止材においても、耐湿性は良好であった
が、バリ特性が著しく劣っていた。The encapsulant of this comparative example also had good moisture resistance, but was significantly inferior in burr characteristics.
比較例５ 実施例１において、結晶シリカを配合せずに水酸化アル
ミニウムとタルクを50:50で配合した。Comparative Example 5 In Example 1, aluminum hydroxide and talc were blended at 50:50 without blending crystalline silica.
封止後の特性は著しく劣っていた。The characteristics after sealing were extremely poor.
（発明の効果） この発明の半導体封止用エポキシ樹脂成形材料によれ
ば、封止樹脂の耐湿性を向上させ、かつ、成形性も著し
く向上させることができ、特に、バリの発生量を極めて
少なくすることができる。このため、この発明の半導体
封止用エポキシ樹脂成形材料を用いることにより、パワ
ートランジスタデバイスや高集積化LSIの超ミニパッケ
ージに対しても樹脂封止を良好に行うことが可能とな
る。(Effects of the Invention) According to the epoxy resin molding material for semiconductor encapsulation of the present invention, it is possible to improve the moisture resistance of the encapsulation resin and also significantly improve the moldability, and particularly, the amount of burr generated is extremely high. Can be reduced. Therefore, by using the epoxy resin molding material for semiconductor encapsulation of the present invention, resin encapsulation can be satisfactorily performed even for power transistor devices and ultra-mini packages of highly integrated LSI.
Claims (1)
ールノボラック樹脂および結晶シリカもしくは溶融シリ
カを含有する組成物に、硬化助剤として６−ジブチルア
ミノ−1,8−ジアザビシクロ（5,4,0）ウンデセン−７ま
たはその誘導体を配合してなることを特徴とする半導体
封止用エポキシ樹脂成形材料。1. A composition containing an epoxy resin, a phenol novolac resin as a curing agent therefor, and crystalline silica or fused silica, and 6-dibutylamino-1,8-diazabicyclo (5,4,0) as a curing aid. An epoxy resin molding material for semiconductor encapsulation, comprising an undecene-7 or a derivative thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010424A JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010424A JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02189331A JPH02189331A (en) | 1990-07-25 |
| JPH0733432B2 true JPH0733432B2 (en) | 1995-04-12 |
Family
ID=11749773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1010424A Expired - Fee Related JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0733432B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100516409B1 (en) | 1998-02-19 | 2005-09-23 | 히다치 가세고교 가부시끼가이샤 | Novel compounds, hardening accelerator, resin composition, and electronic part device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH066590B2 (en) * | 1985-07-15 | 1994-01-26 | サンアプロ株式会社 | New amidine, its production and use |
-
1989
- 1989-01-19 JP JP1010424A patent/JPH0733432B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02189331A (en) | 1990-07-25 |
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