JPH02189331A - Epoxy resin molding material for semiconductor sealing - Google Patents
Epoxy resin molding material for semiconductor sealingInfo
- Publication number
- JPH02189331A JPH02189331A JP1042489A JP1042489A JPH02189331A JP H02189331 A JPH02189331 A JP H02189331A JP 1042489 A JP1042489 A JP 1042489A JP 1042489 A JP1042489 A JP 1042489A JP H02189331 A JPH02189331 A JP H02189331A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- molding material
- moisture resistance
- resin molding
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、半導体封止用エポキシ樹脂成形材料に関す
るものである。さらに詳しくは、この発明は、成形性お
よび耐湿性に優れた半導体封止用エポキシ樹脂成形材料
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an epoxy resin molding material for semiconductor encapsulation. More specifically, the present invention relates to an epoxy resin molding material for semiconductor encapsulation that has excellent moldability and moisture resistance.
（従来の技術）・
半導体素子の封止用成形材料としては、従来より耐湿性
、耐熱性等の性能や、価格などの点においてエポキシ樹
脂を主成分とするものが広く使用されているが、近年で
は半導体素子の高密度化、高集積化によりパッケージの
超小型化、薄型化が進み、樹脂成形材料の成形性、耐湿
性の向上が重要な課題となっている。(Prior art) - As a molding material for encapsulating semiconductor elements, epoxy resin-based materials have traditionally been widely used in terms of performance such as moisture resistance and heat resistance, as well as price. In recent years, as semiconductor devices have become more dense and highly integrated, packages have become ultra-small and thin, and improving the moldability and moisture resistance of resin molding materials has become an important issue.
成形性としては、半導体封止の成形時にパリが生じない
こと等が要求され、この成形性の向上を図るために従来
よりリン系（ＴＰＰ等）または第三級アミン系（ＤＢＵ
等）等の硬化助剤が使用されてきている。Regarding moldability, it is required that no flakes occur during molding of semiconductor encapsulation, and in order to improve this moldability, phosphorus-based (TPP, etc.) or tertiary amine-based (DBU)
etc.) have been used as curing aids.
また、耐湿性の向上を図るためには、半導体素子と封止
樹脂との間に発生する熱応力を低減させることが必要で
あることから、膨張係数や弾性率を低下させることが種
々の方法により試みられてきている。たとえば、官能基
としてエポキシ基を有する変性シリコーンオイル等のシ
リコーン系低応力改質剤を耐湿性付与剤として添加する
ことなどか試みられている。In addition, in order to improve moisture resistance, it is necessary to reduce the thermal stress generated between the semiconductor element and the sealing resin, so various methods are being used to reduce the coefficient of expansion and modulus of elasticity. has been attempted by For example, attempts have been made to add a silicone-based low stress modifier such as a modified silicone oil having an epoxy group as a functional group as a moisture resistance imparting agent.
（発明か解決しようとする課題）
しかしなから、成形性と耐湿性の双方の向上を図るため
、これまでの硬化助剤と耐湿性付与剤とを併用しても、
耐湿性は良好なものとなるが、成形性は十分に向上した
ものとならず、成形時に多量のパリが発生していた。そ
のため、これまでの封止用成形材料は、超ミニパッケー
ジ用の封止に十分に適用できるものとはなっていないの
が実状である。(Problem to be solved by the invention) However, in order to improve both moldability and moisture resistance, even if conventional curing aids and moisture resistance imparting agents are used together,
Although the moisture resistance was good, the moldability was not sufficiently improved and a large amount of flakes occurred during molding. Therefore, the current situation is that the molding materials for sealing so far cannot be sufficiently applied to sealing for ultra-mini packages.
この発明は以上の通りの事情に鑑みてなされたものであ
り、従来の半導体素子の封止用成形材料の欠点を改善し
、良好な耐湿性を有し、かつ、パリの発生量が極めて少
なく、成形性にも優れ、超ミニバッゲージの封止にも好
適に使用することのできる半導体封止用成形材料を提供
することを目的としている。This invention was made in view of the above-mentioned circumstances, and it improves the drawbacks of conventional molding materials for sealing semiconductor elements, has good moisture resistance, and produces an extremely low amount of paris. The object of the present invention is to provide a molding material for semiconductor encapsulation that has excellent moldability and can be suitably used for encapsulating ultra-mini bags.
（課題を解決するための手段）
この発明は、上記の課題を解決するしのとして、エポキ
シ樹脂系成形材料であって、硬化助剤として６−ジブチ
ルアミノ−１，８−ジアザビシクロ（５，４，０）ウン
デセン−７またはその誘導体を配合してなることを特徴
とする半導体封止用エポキシ樹脂成形材料を提供する。(Means for Solving the Problems) The present invention solves the above problems by providing an epoxy resin molding material in which 6-dibutylamino-1,8-diazabicyclo (5,4 , 0) An epoxy resin molding material for semiconductor encapsulation is provided, which is characterized by containing undecene-7 or a derivative thereof.
以下、この発明の半導体封止用成形材料について詳関１
に説明する。The details of the molding material for semiconductor encapsulation of the present invention will be explained below.
Explain.
この発明の半導体封止用成形材料は、硬化助剤として、
６−ジブチルアミノ−１．８−ジアザビシクロ（５，４
，０）ウンデセンづまたはそのアルキル、アルケニル、
アミノ基置換等の誘導体を含有することにより耐湿性と
成形性の双方を向上させたものとなっている。The molding material for semiconductor encapsulation of the present invention contains, as a curing aid,
6-dibutylamino-1,8-diazabicyclo(5,4
,0) undecene or its alkyl, alkenyl,
By containing derivatives such as those substituted with amino groups, both moisture resistance and moldability are improved.
この６−ジブチルアミノ−１．８−ジアザビシクロ（５
，４，０）ウンデセン−７類の半導体封止用成形材料に
対する添加量は触媒量でよく、その成形材料全体量の０
．０２〜１（ｈｖｔ％ 、さらには０．０５〜５ｗｔ％
とするのが好ましい。０．０２ｖｔ％未満であると、添
加効果か少なく、また、１０ｗｔ％を超えて添加しても
大きな効果はなく不経済となる。This 6-dibutylamino-1,8-diazabicyclo(5
, 4, 0) The amount of undecene-7 added to the molding material for semiconductor encapsulation may be a catalytic amount, and the amount of undecene-7 added to the molding material for semiconductor encapsulation may be 0% of the total amount of the molding material.
．． 02-1 (hvt%, even 0.05-5wt%
It is preferable that If it is less than 0.02 wt%, the effect of addition will be small, and if it is added in excess of 10 wt%, there will be no significant effect and it will be uneconomical.
この発明の半導体封止用成形材料において、ベース樹脂
としては、耐湿性、耐熱性等の性能の良好なものとして
知られている従来公知のエポキシ樹脂等を適宜使用する
ことができる。このようなエポキシ樹脂としては、たと
えば、ノボラック型エポキシ樹脂、ビスフェノールＡ型
エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、脂環
式エポキシ樹脂、ハロゲン化エポキシ樹脂などを例示す
ることができる。In the molding material for semiconductor encapsulation of the present invention, as the base resin, conventionally known epoxy resins known to have good performance such as moisture resistance and heat resistance can be used as appropriate. Examples of such epoxy resins include novolak epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, alicyclic epoxy resins, and halogenated epoxy resins.
また、硬化剤としてもノボラック型フェノール樹脂など
従来より使用されているものを用いることができる。特
に、ノボラック型フェノール樹脂としては、１分子中に
２個以上のフェノール性水酸基を有するものを好適な硬
化剤として例示することができる。Further, as a curing agent, a conventionally used curing agent such as a novolak type phenol resin can be used. In particular, as the novolak type phenolic resin, those having two or more phenolic hydroxyl groups in one molecule can be exemplified as suitable curing agents.
さらに封止用樹脂としての特性を損なわない限り他の種
々の充填剤や添加剤を含有することができる。たとえば
、結晶性シリカや溶融シリカ等の充填剤、低応力改質剤
、難燃剤、硬化促進剤、離型剤、着色剤などを半導体素
子の種類、用途に応じて適宜配合することができる。Furthermore, various other fillers and additives can be contained as long as the properties as a sealing resin are not impaired. For example, fillers such as crystalline silica and fused silica, low stress modifiers, flame retardants, hardening accelerators, mold release agents, colorants, etc. can be appropriately blended depending on the type and use of the semiconductor element.
また、この発明の半導体封止用成形材料を用いて半導体
を封止する方法としては、従来と同様の方法を封止する
半導体素子等に応じて適宜採用することができる。Further, as a method for encapsulating a semiconductor using the molding material for semiconductor encapsulation of the present invention, a conventional method can be appropriately employed depending on the semiconductor element to be encapsulated.
（作 用）
この発明の半導体封止用成形材料は、硬化助剤として、
６−ジブチルアミノ−１，８−ジアザビシクロ（５，４
，０）ウンデセン−７を含有するので、半導体素子の封
止の耐湿性を優れたものにすると共に、その成形性ら著
しく向上させることができる。(Function) The molding material for semiconductor encapsulation of the present invention contains, as a curing aid,
6-dibutylamino-1,8-diazabicyclo(5,4
.
（実施例）
以下、実施例を示して、この発明の半導体封止用成形材
料を具体的に説明する。(Example) Hereinafter, the molding material for semiconductor encapsulation of the present invention will be specifically explained with reference to Examples.
実施例１
クレーゾールノボラック型エポキシ樹脂にフェノールノ
ボラック系硬化剤、結晶シリカ、その他添加剤を配合し
、これに硬化助剤として、６−ジブチルアミノ−１，８
−ジアザビシクロ（５，４，０）ウンデセンづ（以下、
ＤＢＡ−ＤＢＵと略記する）を１ｖ４ｔ％添加して半導
体封止用エポキシ樹脂成形材料を製造しな。Example 1 A phenol novolak curing agent, crystalline silica, and other additives were blended with a cresol novolac type epoxy resin, and 6-dibutylamino-1,8 was added as a curing aid.
-Diazabicyclo(5,4,0) undecene (hereinafter referred to as
An epoxy resin molding material for semiconductor encapsulation is manufactured by adding 1v4t% of DBA-DBU (abbreviated as DBA-DBU).
得られた半導体封止用エポキシ樹脂成形材料により半導
体素子を封止し、成形性と耐湿性を評価した。この場合
、複合耐湿性と成形性を評価する半導体素子としては、
耐湿性評価用の標準素子を用い、成形性は２０μｍのス
リットをしみ出ずバリの最大距離（ｎｎ）によって評価
し、また、耐湿性はＰＯＴテスト（２ａｔｉ、 １５ｗ
ｔ°Ｃ、１００１’ｔ１１％、 ５００時間）の不良数
によって評価した。A semiconductor element was encapsulated with the obtained epoxy resin molding material for semiconductor encapsulation, and moldability and moisture resistance were evaluated. In this case, as a semiconductor element to evaluate composite moisture resistance and moldability,
Using a standard element for moisture resistance evaluation, formability was evaluated by the maximum distance (nn) of burrs without seepage through a 20 μm slit, and moisture resistance was evaluated using a POT test (2ati, 15w).
The evaluation was based on the number of defects at t°C, 1001't11%, 500 hours).
これらの評価結果は表１に示す通りであった。The results of these evaluations are shown in Table 1.
後述の比較例との対比から明らかなように、この実施例
の封止は、これまでにない優れたパリ特性と十分な耐湿
性を示した。As is clear from the comparison with the comparative example described below, the sealing of this example showed unprecedented excellent Paris properties and sufficient moisture resistance.
実施例２
硬化助剤としてＤＢＡ−ＤＢＵを４ｖｔ％添加し、実施
例１と同様に半導体封止用エポキシ樹脂成形材料を製造
し、半導体素子を封止してその性質を評価した。Example 2 An epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1 by adding 4vt% of DBA-DBU as a curing aid, and a semiconductor element was encapsulated and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この実施例の封止においても、実施の１１と同様に、極
めて優れたパリ特性と耐湿性を示した。Similar to Example 11, the sealing of this Example also showed extremely excellent Paris characteristics and moisture resistance.
比較例１
硬化助剤としてＴＰＰを使用し、実施例１と同様に半導
体封止用エポキシ樹脂成形材料を製造し、半導体素子を
封止してその性質を評価した。Comparative Example 1 Using TPP as a curing aid, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1, a semiconductor element was encapsulated, and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封正においては、耐湿性が著しく低下して
おり、また、パリ特性も実施例に比べて劣っていた。In the seal of this comparative example, the moisture resistance was significantly lowered, and the Paris property was also inferior to that of the example.
比較例２
硬化助剤としてＤＢＵを使用し、実施例１と同様に半導
体封止用エポキシ樹脂成形材料を製造し、半導体素子を
封止してその性質を評価しな。Comparative Example 2 Using DBU as a curing aid, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1, a semiconductor element was encapsulated, and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止においても耐湿性が著しく低下してお
り、また、パリ特性も十分なものではなかった。In the sealing of this comparative example, the moisture resistance was also significantly reduced, and the sealing properties were also not sufficient.
比較例３
硬化助剤としてＴＰＰを使用し、さらに耐湿性付与剤と
してエポキシ変性シリコンオイルを添加して実施例１と
同様に半導体封止用エポキシ樹脂成形材料を製造し、半
導体素子を封止してその性質を評価しな。Comparative Example 3 An epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1 using TPP as a curing aid and further adding epoxy-modified silicone oil as a moisture resistance imparting agent, and a semiconductor element was encapsulated. Evaluate its nature.
結果を表１に示す。The results are shown in Table 1.
この比較例の封正においては、耐湿性は良好であったが
、パリ特性か著しく劣っていた。In the seal of this comparative example, the moisture resistance was good, but the Paris property was significantly poor.
比較例４
硬化助剤として０８ｔｌを使用し、さらに耐湿性付与剤
としてエポキシ変性シリコンオイルを添加して実施例１
と同様に半導体封止用エポキシ樹脂成形材料を製造し、
半導体素子を封止してその性質を評価した。Comparative Example 4 Using 08tl as a curing aid and further adding epoxy modified silicone oil as a moisture resistance imparting agent, Example 1
Similarly, we manufacture epoxy resin molding materials for semiconductor encapsulation,
The semiconductor device was sealed and its properties were evaluated.
結果を表１に示す。The results are shown in Table 1.
この比較例の封止においても、耐湿性は良好であったが
、パリ特性が著しく劣っていた。Although the sealing of this comparative example also had good moisture resistance, the sealing properties were significantly poor.
（発明の効果）
この発明の半導体素子封止用エポキシ樹脂成形材料によ
れば、封止樹脂の耐湿性を向上させ、かつ、成形性も著
しく向上させることができ、特に、パリの発生量を極め
て少なくすることができる。(Effects of the Invention) According to the epoxy resin molding material for encapsulating semiconductor elements of the present invention, the moisture resistance of the encapsulating resin and the moldability can be significantly improved, and in particular, the amount of paris generated can be improved. It can be made extremely small.
このため、この発明の半導体封止用エポキシ樹脂成形材
料を用いることにより、パワートランジスタデバイスや
高＠積化ＬＳＩの超ミニパッケージに対しても樹脂封止
を良好に行うことが可能となる。Therefore, by using the epoxy resin molding material for semiconductor encapsulation of the present invention, it is possible to perform good resin encapsulation even in ultra-mini packages of power transistor devices and high-density LSIs.
Claims (2)
ジアザビシクロ（５、４、０）ウンデセン−７またはそ
の誘導体を配合してなることを特徴とする半導体封止用
エポキシ樹脂成形材料。(1) 6-dibutylamino-1,8- as a curing aid
An epoxy resin molding material for semiconductor encapsulation, characterized in that it contains diazabicyclo(5,4,0)undecene-7 or a derivative thereof.
５、４、０）ウンデセン−７またはそのアルキル誘導体
を０．０５〜５ｗｔ％配合した請求項（１）記載の半導
体封止用エポキシ樹脂成形材料。(2) 6-dibutylamino-1,8-diazabicyclo(
5,4,0) The epoxy resin molding material for semiconductor encapsulation according to claim (1), which contains 0.05 to 5 wt% of undecene-7 or its alkyl derivative.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010424A JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010424A JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02189331A true JPH02189331A (en) | 1990-07-25 |
| JPH0733432B2 JPH0733432B2 (en) | 1995-04-12 |
Family
ID=11749773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1010424A Expired - Fee Related JPH0733432B2 (en) | 1989-01-19 | 1989-01-19 | Epoxy resin molding material for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0733432B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216484A (en) * | 1985-07-15 | 1987-01-24 | Sanapuro Kk | Novel amidine, production and use thereof |
-
1989
- 1989-01-19 JP JP1010424A patent/JPH0733432B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216484A (en) * | 1985-07-15 | 1987-01-24 | Sanapuro Kk | Novel amidine, production and use thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495270B1 (en) | 1998-02-19 | 2002-12-17 | Hitachi Chemical Company, Ltd. | Compounds, hardening accelerator, resin composition, and electronic part device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0733432B2 (en) | 1995-04-12 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |