JPH07509351A - 回路ダイスをウエーハから分離するための方法および装置 - Google Patents
回路ダイスをウエーハから分離するための方法および装置Info
- Publication number
- JPH07509351A JPH07509351A JP6504502A JP50450294A JPH07509351A JP H07509351 A JPH07509351 A JP H07509351A JP 6504502 A JP6504502 A JP 6504502A JP 50450294 A JP50450294 A JP 50450294A JP H07509351 A JPH07509351 A JP H07509351A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wafer
- die
- dice
- station
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
- H10W46/507—Located in dummy chips or in reference chips
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.第1の側に構成要素を含む複数のダイスを含み、該ダイスを相互に分ける少 なくとも1つのストリートを含むウェーハから個々のマイクロ回路を分離する方 法において、 (1)前記ウェーハの前記第1の側を保護担体の第1の側に固定し、(2)前記 少なくとも1つのストリートに沿って前記ウェーハを裁断することにより、前記 ダイスの少なくとも1つが前記ウェーハにおける他のダイスの全てから取外され 、 (3)前記少なくとも1つの取外されたダイスを前記保護フィルムから取外すス テップを含む方法。 2.前記ステップ(1)が、 前記ウェーハの前記第1の側を、接着剤を含むプラスチック・フィルムの第1の 側に接触させることを含み、前記フィルムが前記担体を含む請求の範囲第1項記 載の方法。 3.ステップ(1)に先立ち、前記フィルムおよび接着剤が接触しないことが要 求される前記ウェーハ上の指定された構成要素の位置と対応して前記フィルムに ホールを配置するステップを更に含む請求の範囲第2項記載の方法。 4.ステップ(2)に先立ち、第2のフィルムを前記保護フィルムの第2の側に 取付けるステップを更に含み、前記第2の側が前記第1の側とは反対側である請 求の範囲第3項記載の方法。 5.ステップ(2)が、 鋸が前記ウェーハを完全に裁断するが、前記保護フィルムは裁断することなく切 れ目を入れるに過ぎないように、前記ウェーハを前記の少なくとも1つのストリ ートに沿って裁断することを含む請求の範囲第1項、第3項、第4項のいす°れ かに記載の方法。 6.ステップ(3)が、 (3.1)前記保護フィルムを変形させることにより前記ダイスが前記ウェーハ により規定される面から引きはがされるように、前記ダイスにおける1つの点に おける前記保護フィルムを介して前記の少なくとも1つの取外されたダイスに対 して圧力を加えるステップと、 (3.2)第1の把持具を用いて、前記第1の側と反対側の第2の側の前記ダイ スを拾上げ、かつ前記ダイスを前記フィルムから引きはがすステップとを含む請 求の範囲第1項記載の方法。 7.(4)前記ダイスの前記第1の側が反対方向に向くように該ダイスを裏返し 、(5)前記ダイスを指定されたステーションへ移送し、(6)前記ダイスを解 放するステップを更に含む請求の範囲第1項または第6項に記載の方法。 8.ステップ(4)が、 (4.1)前記ダイスを前記第1の把持具から、前記第1の側の前記ダイスを把 持する第2の把持具へ移送し、 (4.2)前記第2の把持具を裏返すステップを含む請求の範囲第7項記載の方 法。 9.ステップ(2)に先立ち、前記ウェーハが前記保護フィルムに取付けられる 時に前記の少なくとも1つのストリートの場所を示す少なくとも1つの指標を前 記保護フィルム上に置くステップを更に含む請求の範囲第1項、第3項、第4項 、第6項のいす°れかに記載の方法。 10.前記ウェーハが前記保護フィルムに取付けられる時、前記指標が前記ウェ ーハの周囲の外側になるように配置された少なくとも2つのホールを含み、該ホ ールが1本の線を画成する請求の範囲第9項記載の方法。 11.前記ウェーハが前記保護フィルムに取付けられる時、前記指標が前記ウェ ーハの前記周囲の外側になるように配置された少なくとも第1および第2の組の ホールを含み、前記第1および第2の組のホールがそれぞれ第1および第2の直 交線を画成する請求の範囲第10項記載の方法。 12.前記ウェーハが前記保護フィルムに取付けられる時、前記指標が前記ウェ ーハの周囲の外側になるように配置された少なくとも2つのインク点である請求 の範囲第9項記載の方法。 13.前記ウェーハが前記保護フィルムに取付けられる時に前記の指定された構 成要素が前記ホールと整合するように、前記ウェーハを前記ホールに正確に整合 させるステップを更に含む請求の範囲第3項または第4項に記載の方法。 14.前記ウェーハにおけるどのダイスが受入れ得るかを示す前記ウェーハのマ ップを生成し、 前記の受入れ得るクイズのみを前記ウェーハから取除くステップを更に含む請求 の範囲第1項、第3項、第4項、第6項のいす°れかに記載の方法。 15.ウェーハおよびダイスの第1の側における複数の構成要素を支持するダイ スと、前記ダイスを個々のクイズに分けるダイス間の複数のストリートとを含む ウェーハを分ける装置において、 第1のフィルム層を載置したフィルム・フレームを含むフィルム・フレーム組立 体と、 前記ウェーハの前記第1の側が前記フィルムに固定されるように前記フィルムに 対して前記ウェーハを取付ける支持ステーションと、前記ダイスを相互に取外す ように前記ウェーハを前記ストリートに沿って裁断する裁断ステーションと、 前記の取外されたダイスを前記フィルムから取外す拾上げ定置ステーションとを 備える装置。 16.前記ウェーハを前記フィルムに固定することに先立ち、フィルムの前記第 1の層に前記ダイス上の構成要素と対応する予め定めたパターンで穿孔するホー ル穿孔ステーションを更に備え、 前記ホールが予め定めた関係で前記ダイス上の構成要素と整合するように、前記 支持ステーションが更に、前記ウェーハを前記第1のフィルム層に整合するため の整合装置を更に含む、請求の範囲第15項記載の装置。 17.第2のフィルム層を前記第1のフィルム層に固定するためのフィルム支持 ステーションを更に備える請求の範囲第16項記載の装置。 18.前記拾上げ定置ステーションが、前記フィルム屑を介して前記ウエーハへ 移送される前記第2のフィルム層に作用力を及ぼすためのニードル束を含み、該 作用力が前記フィルムを変形してダイスを前記フィルムから部分的に分けるよう 引上げさせ、 前記第1の側と反対側の前記ダイスの第2の側の前記ダイスを引上げて該ダイス を前記フィルムから取外すための真空プローブと、前記第1の側が反転されるよ うに前記ダイスを裏返し、該ダイスを指定された場所へ移送する手段とを含む請 求の範囲第15項記載の装置。 19.前記の裏返し移送する手段が、前記ダイスを前記第1の真空プローブから 受取り、前記ダイスの前記第1の側へ取付けるための第2の真空プローブを含む 請求の範囲第18項記載の装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/918,665 US5362681A (en) | 1992-07-22 | 1992-07-22 | Method for separating circuit dies from a wafer |
| US918,665 | 1992-07-22 | ||
| PCT/US1993/006422 WO1994002299A1 (en) | 1992-07-22 | 1993-07-08 | Method and apparatus for separating circuit dies from a wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07509351A true JPH07509351A (ja) | 1995-10-12 |
| JP3386126B2 JP3386126B2 (ja) | 2003-03-17 |
Family
ID=25440755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50450294A Expired - Lifetime JP3386126B2 (ja) | 1992-07-22 | 1993-07-08 | 回路ダイスをウエーハから分離するための方法および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5362681A (ja) |
| EP (1) | EP0651693B1 (ja) |
| JP (1) | JP3386126B2 (ja) |
| DE (1) | DE69329529T2 (ja) |
| WO (1) | WO1994002299A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508110A (ja) * | 2004-08-09 | 2008-03-21 | アナログ デバイシス, インコーポレイテッド | Memsデバイスの製造方法 |
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-
1992
- 1992-07-22 US US07/918,665 patent/US5362681A/en not_active Expired - Lifetime
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- 1993-07-08 EP EP93917023A patent/EP0651693B1/en not_active Expired - Lifetime
- 1993-07-08 DE DE69329529T patent/DE69329529T2/de not_active Expired - Lifetime
- 1993-07-08 JP JP50450294A patent/JP3386126B2/ja not_active Expired - Lifetime
- 1993-07-08 WO PCT/US1993/006422 patent/WO1994002299A1/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008508110A (ja) * | 2004-08-09 | 2008-03-21 | アナログ デバイシス, インコーポレイテッド | Memsデバイスの製造方法 |
| JP4809838B2 (ja) * | 2004-08-09 | 2011-11-09 | アナログ デバイシス, インコーポレイテッド | Memsデバイスの製造方法 |
| US8343369B2 (en) | 2004-08-09 | 2013-01-01 | Analog Devices, Inc. | Method of producing a MEMS device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69329529T2 (de) | 2001-03-08 |
| US5362681A (en) | 1994-11-08 |
| JP3386126B2 (ja) | 2003-03-17 |
| EP0651693A1 (en) | 1995-05-10 |
| DE69329529D1 (de) | 2000-11-09 |
| EP0651693B1 (en) | 2000-10-04 |
| WO1994002299A1 (en) | 1994-02-03 |
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