JPH0765702A - Electron-emitting device and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [Object] To provide an electron-emitting device having a small temperature rise of the device, a small variation in electron-emitting devices, and a good electron-emitting efficiency, and a manufacturing method thereof. In an electron-emitting device having a conductive film between a pair of electrodes on an insulating substrate and having at least one crack portion in a high resistance state in the conductive film, the conductive film is different in type. An electron-emitting device comprising at least two layers of different substances and having cracks of at least two types of substances. It is preferable that the work function of the conductive film formed by laminating two or more layers becomes smaller as the distance from the insulating substrate increases. After forming a first type conductive film between a pair of electrodes on an insulating substrate and generating a cracked portion by electric heating,
A method of manufacturing an electron-emitting device, which comprises repeating a step of forming a second type conductive film on the conductive film and generating a crack by heating with electricity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device and a method for manufacturing an electron-emitting device capable of emitting electrons with high efficiency by a simple manufacturing method.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices are known, a thermoelectron source and a cold cathode electron source. The cold cathode electron source includes a field emission type (FE), a metal / insulating layer / metal type (hereinafter abbreviated as MIM), and a surface conduction electron emitting device (SC).
E) etc.

As an example of the field emission type (FE), W.
P. Dyke & W. W. Dolan, "Field e
"Mission", Advance in Elect
ronPhysics, 8, 89 (1956) and C.I. A. Spindt, "Physical prop
erties of thin film-field
Emission cathodes with mo
lybdenum cones ”, J. Appl. Ph.
ys. , 47, 5248 (1976) and the like are known.

An example of the MIM type is C.I. A. Mea
d, "The tunnel-emission am
plier, J. et al. Appl. Phys. , 32, 6
46 (1961) and the like are known.

As an example of the SCE type, M. I. Elin
son, Radio Eng. Electron P
ys. 10 (1965) and so on. The SCE utilizes a phenomenon in which electron emission occurs when a current is passed through a thin film having a small area formed on a substrate in parallel with the film surface.

As the surface conduction electron-emitting device (SCE), the one using the SnO ₂ thin film by the above-mentioned Erinson, the one using the Au thin film [G. Dittmer: "T
"Hin Solid Films", 9, 317 (19)
72)], by In ₂ O ₃ / SnO ₂ thin film [M.
Hartwell and C.I. G. Fonstad:
"IEEE Trans.ED Conf.", 519
(1975)], by a carbon thin film [Hiraki Araki
Others: Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like are reported.

As a typical element structure of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration is shown in FIG. FIG. 6A is a plan view of the element, and FIG. 6B is a sectional view taken along the line AA. In the figure, 1 is an insulating substrate. The electron emitting portion forming thin film 4a is formed of an H-shaped metal oxide thin film formed by sputtering, etc., and the electron emitting portion 5 is formed by an energization process called forming described later. 4a is a thin film including an electron emitting portion.

Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion forming thin film 4 is formed with an electron-emitting portion 5 in advance by an energization process called forming before the electron emission. . That is, the forming is performed by applying a voltage across both ends of the electron emitting portion forming thin film 4a to locally destroy, deform or alter the electron emitting portion forming thin film to make it into an electrically high resistance electron. That is, the emission part 5 is formed. In some cases, the electron emitting portion 5 has a crack in a part of the electron emitting portion forming thin film 4a, and the electron is emitted from the vicinity of the crack. Less than,
The electron emission part forming thin film including the electron emission part generated by forming is called a thin film including the electron emission part.

In the surface-conduction type electron-emitting device which has been subjected to the forming treatment, a voltage is applied to the thin film 4a including the above-mentioned electron-emitting portion, and a current is caused to flow on the surface of the device to cause the above-mentioned electron-emitting portion 5 to emit electrons. It is a thing.

[0010]

However, in the conventional surface conduction electron-emitting device as described above, the
In particular, the following reasons can be mentioned as problems that hinder practical application for applications in which a large number of electron-emitting devices are arranged, such as a display device.

1) Even in the state where electrons are emitted, a part of the electric current flows in the insulating substrate 1, so that it may be a factor of generating Joule heat. 2) The current flowing through the insulating substrate 1 is greatly affected by impurities attached to the insulating substrate 1 or on the insulating substrate 1, so that variations among the elements increase. 3) The efficiency of electron emission is not very good. It is considered that this is due to the possibility that the current flowing through the substrate 1 is large. Due to the above problems, the surface conduction electron-emitting device has not been positively applied industrially, although it has the advantage that the device structure is simple.

The present invention has been made in order to solve the problems of the prior art as described above, and the temperature rise of the element is small even when the electron emission is performed, and the variation of the electron emission between the elements is small. It is an object of the present invention to provide an electron-emitting device having a small size and good electron emission efficiency, and a method for manufacturing the same.

[0013]

That is, the present invention has a conductive film between a pair of electrodes on an insulating substrate, and the conductive film has at least one crack portion in a high resistance state. In the electron-emitting device, the conductive film is composed of at least two layers made of different kinds of substances, and the crack is made of at least two kinds of substances.

Further, according to the present invention, a conductive film of the first type is formed between a pair of electrodes on an insulating substrate, and a cracked portion is generated by electric heating, and then a conductive film of the second type is formed thereon. A step of forming a conductive film and repeating a process of generating a crack by heating with electricity, wherein the conductive film is composed of at least two layers of different kinds of substances, and the crack has at least two kinds of substances. And a method of manufacturing an electron-emitting device including.

The present invention will be described in detail below. The present inventors have studied in view of the above problems, as a result, in order to remove the influence of the insulating substrate at the time of electron emission of the device as much as possible, a conductive thin film or island-shaped film of fine particles on the insulating substrate. In the surface conduction electron-emitting device having, the conductive film composed of the conductive thin film or the island-shaped film of fine particles is formed by laminating at least two kinds of substances having different work functions having cracks at the same site. An electron-emitting device having the above structure was found. It is preferable that the work function of the conductive film formed by stacking two or more layers is smaller as the distance from the insulating substrate increases.

The basic structure, manufacturing method, and characteristics of this novel electron-emitting device according to the present invention will be outlined.
FIG. 1 is a configuration diagram showing the configuration of a basic electron-emitting device according to the present invention. FIG. 1A is a plan view of the device, and FIG.
(B) is a BB line sectional view. In the figure, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 and 13 are thin films made of an electron emitting material, and 5 is an electron emitting portion. FIG. 1 shows an electron-emitting device in which the conductive thin film is formed by stacking two layers made of two different kinds of substances, and the crack portion is made of at least two kinds of substances.

A thin film 4 including an electron emitting portion in the present invention,
The electron emitting portion 5 of 13 is made of conductive fine particles having a particle diameter of several tens of liters, and the thin films 4 and 13 including the electron emitting portions other than the electron emitting portion 5 are made of fine particle films. Note that the fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (also in an island shape). Including) film. Separately from this, the thin films 4 and 13 including the electron emitting portion may be carbon thin films in which conductive fine particles are dispersed.

Pd, Ru, Ag, Au, Ti, In, and C are given as specific examples of the thin films 4 and 13 including the electron emitting portion.
Metals such as u, Cr, Fe, Zn, Sn, Ta, W and Pb, PdO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O
Oxides such as ₃ HfB ₂ , ZrB ₂ , LaB ₆ , CeB
Borides such as ₆ , YB ₄ , GdB ₄ , TiC, ZrC, H
Carbides such as fC, TaC, SiC, WC, TiN, Zr
Nitride such as N and HfN, semiconductor such as Si and Ge, carbon, AgMg, NiCu, Pb, Sn and the like. Further, it is desirable that the work function of the thin film 4 be smaller than the work function of the thin film 13.

Then, the thin films 4 and 13 including the electron emitting portion are formed by a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method or the like.

Next, a method of manufacturing the electron-emitting device of the present invention will be described. There are various methods for manufacturing the electron-emitting device having the electron-emitting portion 5 of the present invention, and an example of the manufacturing process is shown in FIG. Reference numerals 4 and 13 are electron emission portion forming thin films, and examples thereof include fine particle films.

The manufacturing method will be described below in order with reference to FIGS. 2 and 3. 1) After thoroughly cleaning the insulating substrate 1 with a detergent, pure water and an organic solvent, element electrodes 2 and 3 are formed on the surface of the insulating substrate 1 by a vacuum deposition technique and a photolithography technique (FIG. 2A). reference). Any material may be used as the material of the device electrodes as long as it has conductivity. For example, nickel metal may be used, and the device electrode spacing L1 may be used.
Is 2 μm, the device electrode length W1 is 300 μm, and the film thickness d of the device electrodes 2 and 3 is 1000 Å.

2) An organic metal solution is applied between the device electrodes 2 and 3 provided on the insulating substrate 1 so as to hang on the device electrodes 2 and 3, and allowed to stand. A metal film is formed by heat treatment or by a vacuum evaporation method.

Here, as the metal film, Pd, Ru, A
g, Au, Ti, In, Cu, Cr, Fe, Zn, S
n, Ta, W, Pd can be mentioned. After that, patterning is performed by lift-off, etching or the like to form a first electron emitting portion forming thin film (referred to as a first thin film) 13 (see FIG. 2B).

3) Subsequently, when an energization process called forming is applied by applying a voltage between the device electrodes 2 and 3 by the power source 7, a crack with a high resistance having a structural change is formed in a portion near the center of the first thin film 13. The portion 14 is formed (see FIG. 2C). By this energization treatment, the first thin film 13 is locally destroyed, deformed, or altered, and a portion whose structure is changed is called a crack portion 14. As described above, the present applicants have observed that the crack portion 14 is composed of fine metal particles.

4) The crack portion 14 formed by the above method has a crack in a part of the first thin film 13, and the inside of the crack is in a discontinuous state composed of metal fine particles. After this, an organometallic thin film is formed by applying an organometallic solution on the island structure of the first thin film 13 so as to cover the device electrodes 2 and 3 and leaving it to stand. The organometallic solution means Pd, Ru, Ag, Au,
Ti, In, Cu, Cr, Fe, Zn, Sn, Ta,
A solution of an organic compound containing a metal such as W or Pd as a main element is used. After that, the organic metal thin film is heated and baked, and is patterned by lift-off, etching or the like to form the electron emission portion forming thin film 4. (See Fig. 2 (d))

5) Further, when an energization process called forming is applied again by a power source 7 between the device electrodes 2 and 3, a structure near the center of the thin film 4 and the crack 14 is formed. The changed high-resistance electron emitting portion 5 is formed (see FIG. 2E).

The electron emission portion forming thin film 4 is locally destroyed, deformed or altered by this energization treatment, and a portion whose structure is changed is called an electron emission portion 5. As described above, the applicants have observed that the electron emitting portion 5 is composed of the organic metal used in the first thin film 13 and the fourth thin film 4, or the metal fine particles of the organic metal compound. ing.

The basic characteristics of the electron-emitting device according to the present invention produced by the above device structure and manufacturing method will be described with reference to FIGS.

FIG. 3 is a schematic block diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the electron-emitting device having the configuration shown in FIG. In FIG. 3, 1 is an insulating substrate, 2
Reference numerals 3 and 3 denote device electrodes, 13 denotes a first thin film, 4 denotes a second thin film, and 5 denotes an electron emitting portion. Further, 8 is a power source for applying an electron voltage Vf to the element, 9 is an ammeter for measuring the element current If flowing through the thin films 13 and 4 including the electron emission portion between the element electrodes 2 and 3, and 10 is the element. An anode electrode for capturing the emission current Ie emitted from the electron emission portion of the
Reference numeral 1 is a high-voltage power supply for applying a voltage to the anode electrode 10, and 12 is an ammeter for measuring the emission current Ie emitted from the electron emission portion 5 of the device.

To measure the device current If and the emission current Ie of the electron-emitting device, a power source 8 and an ammeter 9 are connected to the device electrodes 2 and 3, and a power source 11 is provided above the electron-emitting device.
The anode electrode 10 is connected to the ammeter 12 and the ammeter 12. Further, the present electron-emitting device and the anode electrode 10 are installed in a vacuum device, and the vacuum device is equipped with equipment necessary for the vacuum device such as an exhaust pump and a vacuum gauge, which are not shown, under a desired vacuum. This device can be measured and evaluated. The voltage of the anode electrode is 1 kV to 1
0 kV, the distance between the anode electrode and the electron-emitting device is 3 mm
It was measured in the range of ~ 8 mm.

FIG. 4 shows a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG. Note that FIG. 4 is shown in arbitrary units, and the emission current Ie is about 1/1000 of the device current If.

As is clear from FIG. 4, this electron-emitting device has three characteristics with respect to the emission current Ie. First of all, in the present device, the emission current Ie rapidly increases when a device voltage higher than a certain voltage (called a threshold voltage, Vth in FIG. 4) is applied, while the emission current Ie increases below the threshold voltage Vth. Almost no Ie is detected. That is, the emission current I
It is a non-linear element having a clear threshold voltage Vth with respect to e.

Second, since the emission current Ie depends on the element voltage Vf, the emission current Ie can be controlled by the element voltage Vf. Thirdly, the emitted charges captured by the anode electrode 10 depend on the time for which the device voltage Vf is applied. That is, the amount of charges captured by the anode electrode 10 can be controlled by the time for which the electronic voltage Vf is applied. Since the electron-emitting device according to the present invention has the above characteristics, it can be expected to be applied to various fields.

FIG. 4 shows an example of the characteristic (MI) in which the element current If monotonously increases with respect to the element voltage Vf. In addition to this, the element current If is a voltage control type with respect to the element voltage Vf. It may also exhibit negative resistance (VCNR) characteristics. Also in this case, the present electron-emitting device has the above-mentioned three characteristics.

A surface conduction electron-emitting device having conductive fine particles dispersed therein may be constructed by partially modifying the basic manufacturing method of the basic device structure of the present invention. . Further, as disclosed by the present inventors in US Pat. No. 5,066,883, a vertical type surface conduction electron device in which element electrodes are provided above and below a step on a substrate and a thin film including an electron emitting portion is arranged between the electrode electrodes. Similar characteristics can be obtained in the emitting element.

[0036]

In the above-described electron-emitting device of the present invention, by stacking electron-emitting materials having different work functions, it is possible to suppress variations in the electron current If and increase the efficiency of electron emission. Therefore, when a large number of electron-emitting devices of the present invention are arranged and used as an electron source of a display device, a great effect can be expected in improving the uniformity and reliability of the image of this display device.

[0037]

EXAMPLES The present invention will be specifically described below with reference to examples.

Example 1 An electron-emitting device of the type shown in FIG. 1 was prepared as the electron-emitting device of this example. FIG. 1A is a plan view of this device.
FIG.1 (b) has shown sectional drawing. Also, as shown in FIG.
In (b), 1 is an insulating substrate, 2 and 3 are device electrodes for applying a voltage to the device, 4 is a thin film including an electron emitting portion,
Reference numeral 5 indicates an electron emitting portion. In the figure, L1 is the device electrode 2
And the element electrode 3 between the element electrodes, W1 is the width of the element electrode, d
Is the thickness of the device electrode, W2 is the width of the first conductive thin film, W3
Represents the width of the second conductive thin film.

A method of manufacturing the electron-emitting device of this embodiment will be described with reference to FIG. 1) A quartz substrate was used as the insulating substrate 1, and after thoroughly washing it with an organic solvent, element electrodes 2 and 3 made of Ni were formed on the surface of the insulating substrate 1 (FIG. 2A). At this time, the element electrode interval L1 is 3 μm, and the element electrode width W1
Was 500 μm, and its thickness d was 1000 Å.

2) Next, a gold (Au) thin film 13 is formed between the device electrodes 2 and 3 by a lift-off method and a vacuum evaporation method.
It is formed to a thickness of 00Å (Fig. 2 (b)).

3) Next, as shown in FIG. 2 (c), when a voltage was applied between the device electrodes 2 and 3 by a pulsed power source 7 to perform energization, a crack was formed on the gold thin film 13 site. The part 14 was formed. The cracked portion 14 had a width of about 2000 liters and was formed between the device electrodes 2 and 3 just near the center.

4) Next, a solution containing organopalladium (manufactured by Okuno Chemical Industries Co., Ltd., ccp-4230) was applied onto the gold thin film 13, and then heat-treated at 300 ° C. for 10 minutes to form palladium oxide ( PdO) fine particles (particle size: 8 to 120Å,
A fine particle film having an average particle diameter of 70Å) was formed to form an electron emission portion forming thin film 4 ((d) of FIG. 2). Here, the electron emission portion forming thin film 4 has a width (element width) W of 300
The device electrodes 2 and 3 are arranged at approximately the center.

The film thickness of the electron emission portion forming thin film 4 was 100Å and the sheet resistance value was 5 × 10 ⁴ Ω / cm ² . The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state where the fine particles are individually dispersed and arranged but also in a state where the fine particles are adjacent to each other or overlap each other (island shape). (Including also)), and the particle size of the fine particles of 8 to 120Å means the diameter of the fine particles in which the particle formation can be recognized in the above-mentioned state.

3) Finally, as shown in FIG. 2 (e), when a voltage was applied between the device electrodes 2 and 3 to carry out an energization process, an electron emitting portion 5 was formed at the site of the fine particle film 4. did it. The electron emitting portion 5 could be formed in the crack portion 14 of the gold thin film. This part is finely divided by palladium (Pd) fine particles (particle size: 8 to 120Å, average particle size 2
It seems that the 0Å) film is formed and serves as an electron emitting portion. As shown in FIG. 2E, the electron emitting portion 5 was formed by applying a voltage between the device electrodes 2 and 3 and subjecting the electron emitting portion forming thin film 4 to an energization process (forming process). FIG. 5 shows the voltage waveform of the forming process.

In FIG. 5, TI and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 millisecond,
T2 is 10 milliseconds, the peak value of the triangular wave (peak voltage during forming) is 5V, and the forming process is about 1
It was performed for 60 seconds in a vacuum atmosphere of × 10 ^-6 torr. In the electron-emitting portion 3 thus produced, fine particles containing palladium element as a main component were dispersed and arranged, and the average particle diameter of the fine particles was 30Å.

The electron emission characteristics of the device manufactured as described above were measured. FIG. 3 shows a schematic configuration diagram of the measurement / evaluation apparatus.

Also in FIG. 3, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 and 13 are thin films including electron emitting parts, 5 is an electron emitting part, and 8 is for applying a voltage to the device. Power source, 9 is an ammeter for measuring the device current If, 10 is an anode electrode for measuring the emission current Ie generated from the device, 11 is a high voltage source for applying a voltage to the anode electrode 10, and 12 is an emission An ammeter for measuring current. To measure the device current If and the emission current Ie of the electron-emitting device, the power source 8 and the ammeter 9 are connected to the device electrodes 2 and 3.
And an anode electrode 10 connected to a power source 11 and an ammeter 12 are arranged above the electron-emitting device. Further, the present electron-emitting device and the anode electrode 10 are installed in a vacuum device, and the vacuum device is provided with equipment necessary for the vacuum device such as an exhaust pump and a vacuum gauge (not shown), so that a desired vacuum can be obtained. The device can be measured and evaluated below. In this embodiment, the distance between the anode electrode and the electron-emitting device is 4 mm, the potential of the anode electrode is 1 kV,
The degree of vacuum in the vacuum device at the time of measuring electron emission characteristics is 1 × 10 ^-6
It was set to torr.

A device voltage was applied between the device electrodes 2 and 3 of the electron-emitting device of the present invention by using the above measuring and evaluating apparatus, and the device current If and the emission current Ie flowing at that time were measured. The current-voltage characteristics as shown in (4) were obtained. In this device, the emission current Ie rapidly increases from the device voltage of about 8 V, the device current If becomes 2.2 mA and the emission current Ie becomes 11 uA at the device voltage of 16 V, and the electron emission efficiency η = Ie / If (%) is 0. It was 0.08%.

The same measurement was carried out on several hundreds of devices produced at the same time. In all, the device voltage was 16V.
There was no big difference in the value of the device current and the emission current when kept at. It was also confirmed that the temperature of the device was lowered and the reliability when the electron-emitting device was operated for a long time was improved.

Comparative Example 1 In Example 1, a solution containing an organic palladium (manufactured by Okuno Chemical Industries Co., Ltd., ccp-4230) was used as in Example 1 without forming the gold thin film 13 on the surface of the insulating substrate 1. As a result, an electron-emitting device in which a palladium oxide (PdO) fine particle film was formed to form an electron-emitting portion was obtained.

As in Example 1, when a device voltage was applied between the device electrodes of this electron-emitting device and the device current If and emission current Ie flowing at that time were measured, the electron emission efficiency η = Ie / If (% ) Was 0.05%.

In the embodiment described above, when forming the electron-emitting portion, the forming process is performed by applying the triangular wave pulse between the electrodes of the element, but the waveform applied between the electrodes of the element is limited to the triangular wave. Alternatively, a desired waveform such as a rectangular wave may be used, and the crest value, the pulse width, the pulse interval, etc. are not limited to the above values, and a desired value may be obtained as long as the electron emitting portion is well formed. Can be selected.

[0053]

As described above, according to the present invention, even when the electron emission is performed, the temperature rise of the element is small, the variation in the electron emission between the elements is small, and the efficiency of the electron emission is good. A different electron-emitting device can be obtained. Further, according to the manufacturing method of the present invention, it is possible to easily obtain the electron-emitting device having the above-mentioned excellent characteristics.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a configuration of a basic electron-emitting device according to the present invention.

FIG. 2 is a process drawing showing an example of a method for manufacturing an electron-emitting device of the present invention.

FIG. 3 is an explanatory view showing a measuring unit for measuring electron emission characteristics of the electron emitting device of the present invention.

FIG. 4 is a graph showing current-voltage characteristics of the electron-emitting device of the present invention.

FIG. 5 is a graph showing a voltage waveform of a forming process of the electron-emitting device of Example 1.

FIG. 6 is a configuration diagram of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2, 3 Element electrode 4 Thin film (2nd thin film) 4a Thin film 5 Electron emission part 7 Pulsed power supply for generating cracks 8 Power supply for passing current to electron emission element 9 Element current If Ammeter for measurement 10 Anode electrode 11 High voltage power supply for applying high voltage to the anode electrode 12 Ammeter for measuring emission current Ie 13 Thin film (first thin film) 14 Crack part

Front page continuation (72) Inventor Hideyuki Sugioka 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Shigeki Matsutani 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Yoshiyuki Nagata 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (4)

[Claims] 1. An electron-emitting device having a conductive film between a pair of electrodes on an insulating substrate, wherein the conductive film has at least one crack portion in a high resistance state. An electron-emitting device comprising a laminate of at least two layers made of different kinds of substances, and a crack portion made of at least two kinds of substances. 2. The electron-emitting device according to claim 1, wherein the work function of the conductive film formed by stacking two or more layers is smaller with increasing distance from the insulating substrate. 3. A conductive film of the first type is formed between a pair of electrodes on an insulating substrate, and a crack is generated by heating by energization, and then a conductive film of the second type is formed thereon. Electron emission consisting of at least two layers made of different kinds of substances, and repeating the steps of forming and causing cracks by electric heating, and the cracks made of at least two kinds of substances Device manufacturing method. 4. The method of manufacturing an electron-emitting device according to claim 3, wherein the work function of the conductive film formed by stacking two or more layers is smaller with increasing distance from the insulating substrate.