JPH0791654B2 - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number: JPH0791654B2
Authority: JP; Japan
Prior art keywords: substrate; vacuum chamber; chamber; thin film; gas
Prior art date: 1985-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61141508A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61295377A (ja

Inventor

ベルクマンエーリヒ

フマーエルマー

Original Assignee

バルツエルスアクチエンゲゼルシヤフト

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-20

Filing date

1986-06-19

Publication date

1995-10-04

1986-06-19 Application filed by バルツエルスアクチエンゲゼルシヤフト filed Critical バルツエルスアクチエンゲゼルシヤフト

1986-12-26 Publication of JPS61295377A publication Critical patent/JPS61295377A/ja

1995-10-04 Publication of JPH0791654B2 publication Critical patent/JPH0791654B2/ja

2010-10-04 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000010409 thin film Substances 0.000 title claims description 27
238000000034 method Methods 0.000 title claims description 26
230000015572 biosynthetic process Effects 0.000 title description 6
238000006243 chemical reaction Methods 0.000 claims description 27
239000000758 substrate Substances 0.000 claims description 27
239000007789 gas Substances 0.000 claims description 21
238000010891 electric arc Methods 0.000 claims description 11
239000000126 substance Substances 0.000 claims description 11
239000012495 reaction gas Substances 0.000 claims description 10
239000000376 reactant Substances 0.000 claims description 8
238000000151 deposition Methods 0.000 claims description 5
150000002500 ions Chemical class 0.000 claims description 5
230000001681 protective effect Effects 0.000 claims description 4
238000005229 chemical vapour deposition Methods 0.000 claims description 3
230000005684 electric field Effects 0.000 claims description 2
239000010410 layer Substances 0.000 description 9
239000000463 material Substances 0.000 description 9
229910052751 metal Inorganic materials 0.000 description 9
239000002184 metal Substances 0.000 description 9
238000005530 etching Methods 0.000 description 8
239000010408 film Substances 0.000 description 7
238000000576 coating method Methods 0.000 description 5
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
150000001875 compounds Chemical class 0.000 description 4
230000008021 deposition Effects 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
239000012298 atmosphere Substances 0.000 description 3
238000004140 cleaning Methods 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000012545 processing Methods 0.000 description 3
239000007858 starting material Substances 0.000 description 3
229910052786 argon Inorganic materials 0.000 description 2
239000007795 chemical reaction product Substances 0.000 description 2
239000002826 coolant Substances 0.000 description 2
238000001816 cooling Methods 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000010574 gas phase reaction Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
150000002739 metals Chemical group 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
150000002902 organometallic compounds Chemical class 0.000 description 2
239000000843 powder Substances 0.000 description 2
229910000838 Al alloy Inorganic materials 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
230000004913 activation Effects 0.000 description 1
239000012300 argon atmosphere Substances 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
239000000498 cooling water Substances 0.000 description 1
150000001879 copper Chemical class 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
-1 for example Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
239000012535 impurity Substances 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
239000000155 melt Substances 0.000 description 1
229910001507 metal halide Inorganic materials 0.000 description 1
150000005309 metal halides Chemical class 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
229910021652 non-ferrous alloy Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
125000002524 organometallic group Chemical group 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
238000000197 pyrolysis Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
238000012552 review Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
238000003786 synthesis reaction Methods 0.000 description 1
238000005496 tempering Methods 0.000 description 1
238000000427 thin-film deposition Methods 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
230000001988 toxicity Effects 0.000 description 1
231100000419 toxicity Toxicity 0.000 description 1
238000010518 undesired secondary reaction Methods 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Physical Vapour Deposition (AREA)

JP61141508A 1985-06-20 1986-06-19 薄膜形成方法 Expired - Lifetime JPH0791654B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
CH2610/85A CH664768A5 (de)	1985-06-20	1985-06-20	Verfahren zur beschichtung von substraten in einer vakuumkammer.
CH2610/85-0		1985-06-20

Publications (2)

Publication Number	Publication Date
JPS61295377A JPS61295377A (ja)	1986-12-26
JPH0791654B2 true JPH0791654B2 (ja)	1995-10-04

Family

ID=4237637

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61141508A Expired - Lifetime JPH0791654B2 (ja)	1985-06-20	1986-06-19	薄膜形成方法

Country Status (9)

Country	Link
US (1)	US4749587A (fr)
JP (1)	JPH0791654B2 (fr)
CH (1)	CH664768A5 (fr)
DE (1)	DE3614384A1 (fr)
ES (1)	ES8707311A1 (fr)
FR (1)	FR2583780B1 (fr)
GB (1)	GB2176808B (fr)
IT (1)	IT1189560B (fr)
SE (1)	SE463461B (fr)

Families Citing this family (39)

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GB2162207B (en) *	1984-07-26	1989-05-10	Japan Res Dev Corp	Semiconductor crystal growth apparatus
FR2604188B1 (fr) *	1986-09-18	1992-11-27	Framatome Sa	Element tubulaire en acier inoxydable presentant une resistance a l'usure amelioree
JPS6395200A (ja) *	1986-10-09	1988-04-26	Sumitomo Electric Ind Ltd	硬質窒化ホウ素膜の製造方法
EP0286306B1 (fr) *	1987-04-03	1993-10-06	Fujitsu Limited	Méthode et appareil de déposition en phase gazeuse de diamant
JPH089519B2 (ja) *	1987-05-11	1996-01-31	富士通株式会社	高圧相窒化ホウ素の気相合成法
US4854263B1 (en) *	1987-08-14	1997-06-17	Applied Materials Inc	Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JP2657810B2 (ja) *	1988-01-11	1997-09-30	フラマトメ	改良された耐摩耗性を有するステンレス鋼製管状要素
GB2215739A (en) *	1988-03-26	1989-09-27	Univ Hull	Ionisation assisted chemical vapour deposition
JPH0244738A (ja) *	1988-08-05	1990-02-14	Semiconductor Energy Lab Co Ltd	電子装置作製方法
US4992153A (en) *	1989-04-26	1991-02-12	Balzers Aktiengesellschaft	Sputter-CVD process for at least partially coating a workpiece
US5061513A (en) *	1990-03-30	1991-10-29	Flynn Paul L	Process for depositing hard coating in a nozzle orifice
US5360479A (en) *	1990-07-02	1994-11-01	General Electric Company	Isotopically pure single crystal epitaxial diamond films and their preparation
DE4029270C1 (fr) *	1990-09-14	1992-04-09	Balzers Ag, Balzers, Li
DE4029268C2 (de) *	1990-09-14	1995-07-06	Balzers Hochvakuum	Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
CA2065581C (fr)	1991-04-22	2002-03-12	Andal Corp.	Methode de deposition physique en phase vapeur activee par plasma, et appareil connexe
JPH04326725A (ja) *	1991-04-26	1992-11-16	Tokyo Electron Ltd	プラズマ装置
CA2077773A1 (fr) *	1991-10-25	1993-04-26	Thomas R. Anthony	Procede de deposition chimique en phase vapeur assistee par chauffage a micro-ondes, hf, ca ou cc
US5175929A (en) *	1992-03-04	1993-01-05	General Electric Company	Method for producing articles by chemical vapor deposition
GB2267733A (en) *	1992-05-13	1993-12-15	Gen Electric	Abrasion protective and thermal dissipative coating for jet engine component leading edges.
CH687111A5 (de) *	1992-05-26	1996-09-13	Balzers Hochvakuum	Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
ES2060539B1 (es) *	1993-01-22	1995-06-16	Tekniker	Proceso para la obtencion de recubrimientos de carbono y carbono-metal mediante deposicion fisica en fase vapor por arco metalico con catodo de grafito.
DE19526387C2 (de) *	1994-07-19	1998-12-10	Sumitomo Metal Mining Co	Doppelt beschichteter Stahlverbundgegenstand und Verfahren zu dessen Herstellung
EP0724026B1 (fr) *	1995-01-25	1999-10-13	Balzers Aktiengesellschaft	Procédé de dépÔt réactif
US5753045A (en) *	1995-01-25	1998-05-19	Balzers Aktiengesellschaft	Vacuum treatment system for homogeneous workpiece processing
CH690857A5 (de) *	1995-07-04	2001-02-15	Erich Bergmann	Anlage zur plasmaunterstützten physikalischen Hochvakuumbedampfung von Werkstücken mit verschleissfesten Schichten und Verfahren zur Durchführung in dieser Anlage
DE19621855C2 (de) *	1996-05-31	2003-03-27	Univ Dresden Tech	Verfahren zur Herstellung von Metallisierungen auf Halbleiterkörpern unter Verwendung eines gepulsten Vakuumbogenverdampfers
CH691717A5 (de) *	1997-03-08	2001-09-14	Comet Technik Ag	Kondensator mit kaltfliessgepressten Elektroden.
EP0988407B9 (fr) *	1997-06-13	2004-12-15	Unaxis Trading AG	Procede de fabrication de pieces enduites d'une couche de qualite pour epitaxie
US6110544A (en) *	1997-06-26	2000-08-29	General Electric Company	Protective coating by high rate arc plasma deposition
AU9410498A (en)	1997-11-26	1999-06-17	Vapor Technologies, Inc.	Apparatus for sputtering or arc evaporation
US5997705A (en) *	1999-04-14	1999-12-07	Vapor Technologies, Inc.	Rectangular filtered arc plasma source
CH694699A5 (de) *	1999-04-29	2005-06-15	Balzers Hochvakuum	Verfahren zur Herstellung von Silizium.
JP4806146B2 (ja) *	1999-07-13	2011-11-02	エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ	真空処理ないしは粉末製造のための装置および方法
DE10018143C5 (de) *	2000-04-12	2012-09-06	Oerlikon Trading Ag, Trübbach	DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
US20020160620A1 (en) *	2001-02-26	2002-10-31	Rudolf Wagner	Method for producing coated workpieces, uses and installation for the method
US7465210B2 (en) *	2004-02-25	2008-12-16	The Regents Of The University Of California	Method of fabricating carbide and nitride nano electron emitters
US7498587B2 (en) *	2006-05-01	2009-03-03	Vapor Technologies, Inc.	Bi-directional filtered arc plasma source
BRPI0811241B1 (pt) *	2007-05-25	2019-06-25	Oerlikon Trading Ag, Trübbach	Instalação e método de tratamento a vácuo
CN111647879A (zh) *	2020-04-20	2020-09-11	中国科学技术大学	一种化学气相沉积装置与方法

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US679926A (en) *	1900-07-30	1901-08-06	Theron Clark Crawford	Manufacture of filaments for incandescing electric lamps.
US3573098A (en) *	1968-05-09	1971-03-30	Boeing Co	Ion beam deposition unit
US3625848A (en) *	1968-12-26	1971-12-07	Alvin A Snaper	Arc deposition process and apparatus
CH624817B (de) *	1979-09-04		Balzers Hochvakuum	Verfahren zur herstellung goldfarbener ueberzuege.
SU1040631A1 (ru) *	1980-06-25	1983-09-07	Предприятие П/Я В-8851	Вакуумно-дуговое устройство
JPS57188670A (en) *	1981-05-13	1982-11-19	Hitachi Ltd	Treatment of electrically conductive member
JPS57201527A (en) *	1981-06-01	1982-12-10	Toshiba Corp	Ion implantation method
US4443488A (en) *	1981-10-19	1984-04-17	Spire Corporation	Plasma ion deposition process
US4512867A (en) *	1981-11-24	1985-04-23	Andreev Anatoly A	Method and apparatus for controlling plasma generation in vapor deposition
IN160089B (fr) *	1982-07-14	1987-06-27	Standard Oil Co Ohio
US4540596A (en) *	1983-05-06	1985-09-10	Smith International, Inc.	Method of producing thin, hard coating
US4559121A (en) *	1983-09-12	1985-12-17	Vac-Tec Systems, Inc.	Method and apparatus for evaporation arc stabilization for permeable targets
US4622452A (en) *	1983-07-21	1986-11-11	Multi-Arc Vacuum Systems, Inc.	Electric arc vapor deposition electrode apparatus

1985
- 1985-06-20 CH CH2610/85A patent/CH664768A5/de not_active IP Right Cessation
1986
- 1986-04-28 DE DE19863614384 patent/DE3614384A1/de not_active Ceased
- 1986-05-13 ES ES554902A patent/ES8707311A1/es not_active Expired
- 1986-06-16 IT IT20793/86A patent/IT1189560B/it active
- 1986-06-18 SE SE8602715A patent/SE463461B/sv not_active IP Right Cessation
- 1986-06-19 JP JP61141508A patent/JPH0791654B2/ja not_active Expired - Lifetime
- 1986-06-19 FR FR868608855A patent/FR2583780B1/fr not_active Expired - Lifetime
- 1986-06-19 US US06/876,274 patent/US4749587A/en not_active Expired - Lifetime
- 1986-06-20 GB GB8615066A patent/GB2176808B/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
IT8620793A1 (it)	1987-12-16
IT1189560B (it)	1988-02-04
SE8602715D0 (sv)	1986-06-18
ES554902A0 (es)	1987-07-16
GB2176808B (en)	1990-03-21
FR2583780A1 (fr)	1986-12-26
IT8620793A0 (it)	1986-06-16
CH664768A5 (de)	1988-03-31
US4749587A (en)	1988-06-07
SE8602715L (fr)	1986-12-21
SE463461B (sv)	1990-11-26
DE3614384A1 (de)	1987-01-02
GB2176808A (en)	1987-01-07
ES8707311A1 (es)	1987-07-16
GB8615066D0 (en)	1986-07-23
FR2583780B1 (fr)	1991-08-23
JPS61295377A (ja)	1986-12-26

Legal Events

Date	Code	Title	Description
2004-10-05	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-10-04	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-06-19	EXPY	Cancellation because of completion of term

Publication	Publication Date	Title
JPH0791654B2 (ja)	1995-10-04	薄膜形成方法
US4992153A (en)	1991-02-12	Sputter-CVD process for at least partially coating a workpiece
RU2114210C1 (ru)	1998-06-27	Способ формирования углеродного алмазоподобного покрытия в вакууме
US20180247797A1 (en)	2018-08-30	Reactors For Plasma-Assisted Processes And Associated Methods
JPS61201769A (ja)	1986-09-06	酸化物、窒化物、酸化窒化物および炭化物からなる層の反応的蒸着法
US20180240656A1 (en)	2018-08-23	Hybrid Filtered Arc-Magnetron Deposition Method, Apparatus And Applications Thereof
JPH05275345A (ja)	1993-10-22	プラズマｃｖｄ方法およびその装置
AU2002332200B2 (en)	2007-08-09	Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
US5902649A (en)	1999-05-11	Vacuum treatment system for homogeneous workpiece processing
JPH0259862B2 (fr)	1990-12-13
US6490993B2 (en)	2002-12-10	Rotating device for plasma immersion supported treatment of substrates
US20230234160A1 (en)	2023-07-27	Diffusion bonding of pure metal bodies
JPH06112133A (ja)	1994-04-22	透明誘電体膜を基体上に被覆する方法
JPH04228566A (ja)	1992-08-18	スパッターイオンめっきによる導電性繊維被覆方法および装置
JPH031377B2 (fr)	1991-01-10
Tyunkov et al.	2023	Analysis of formation and composition of boron-based protective coatings obtained by electron-beam deposition at fore-vacuum pressures
JPH0445580B2 (fr)	1992-07-27
RU2463382C2 (ru)	2012-10-10	Способ и устройство для получения многослойно-композиционных наноструктурированных покрытий и материалов
JPH0377870B2 (fr)	1991-12-11
GB2108533A (en)	1983-05-18	Ion plating
JPS58185418A (ja)	1983-10-29	厚いカ−ボン膜の成膜方法
JPS63118075A (ja)	1988-05-23	グロ−放電による被覆方法
JPH0515788B2 (fr)	1993-03-02
JP2831169B2 (ja)	1998-12-02	Ｃｂｎ膜の形成装置
JP3683044B2 (ja)	2005-08-17	静電チャック板とその製造方法