JPH0794769A - Solar cell manufacturing method - Google Patents
Solar cell manufacturing methodInfo
- Publication number
- JPH0794769A JPH0794769A JP5237821A JP23782193A JPH0794769A JP H0794769 A JPH0794769 A JP H0794769A JP 5237821 A JP5237821 A JP 5237821A JP 23782193 A JP23782193 A JP 23782193A JP H0794769 A JPH0794769 A JP H0794769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte
- solar cell
- cds
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】
【目的】 ＣｄＳ／ＣｄＴｅ太陽電池において、ＣｄＴ
ｅ膜の成膜法を改善することにより、生産性および光電
特性の優れた太陽電池製造法を提供する。
【構成】 ＣｄＳ／ＣｄＴｅ太陽電池において、ＣｄＴ
ｅ膜の成膜を、ＣｄＴｅペーストを塗布・乾燥すること
によりＣｄＴｅ乾燥膜を形成したガラス基板と、ＣｄＳ
膜を成膜したガラス基板とを、ＣｄＴｅ乾燥膜とＣｄＳ
膜が相対する向きに向かい合わせて密着させて熱処理す
ることにより行う。
(57) [Abstract] [Purpose] In CdS / CdTe solar cells, CdT
By improving the method for forming the e film, a method for manufacturing a solar cell having excellent productivity and photoelectric characteristics is provided. [Constitution] In the CdS / CdTe solar cell, CdT
The e film is formed by applying a CdTe paste and drying the glass substrate on which a CdTe dry film is formed, and a CdS film.
CdTe dry film and CdS
The heat treatment is performed by closely contacting the films so that they face each other.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣｄＳ膜を光入射側に
用い、ＣｄＴｅ膜を光吸収層とする太陽電池の製造法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solar cell in which a CdS film is used on the light incident side and a CdTe film is used as a light absorbing layer.
【０００２】[0002]
【従来の技術】従来、ＣｄＳ膜を窓層に用いＣｄＴｅ膜
を吸収層としている太陽電池のＣｄＴｅ膜の成膜は塗布
・焼結法、近接昇華法、真空蒸着法あるいはスパッタ法
などで行われていた。2. Description of the Related Art Conventionally, a CdTe film for a solar cell having a CdS film as a window layer and a CdTe film as an absorption layer is formed by a coating / sintering method, a proximity sublimation method, a vacuum evaporation method or a sputtering method. Was there.
【０００３】[0003]
【発明が解決しようとする課題】塗布・焼結法とは、Ｃ
ｄＳ膜上にＣｄＴｅ乾燥膜を形成後焼結を行うという製
法で、設備が安価で生産性も高く大面積化も容易であ
る。しかしＣｄＳ膜上に形成される緻密なＣｄＴｅ膜上
に高抵抗な多孔質ＣｄＴｅ膜も同時に形成されてしま
い、この高抵抗な多孔質ＣｄＴｅ膜が太陽電池の内部抵
抗を増大させ高効率化の妨げとなっていた。What is the coating / sintering method?
This is a manufacturing method in which a CdTe dry film is formed on the dS film and then sintered, and the equipment is inexpensive, the productivity is high, and the area can be easily increased. However, a high-resistance porous CdTe film is simultaneously formed on the dense CdTe film formed on the CdS film, and this high-resistance porous CdTe film increases the internal resistance of the solar cell and hinders high efficiency. It was.
【０００４】また、近接昇華法、真空蒸着法あるいはス
パッタ法などの真空成膜法では比較的高品質な膜を成膜
できるが、いずれの製法も設備費が高く生産性は低く大
面積化も難しいなど、低コスト化の妨げとなっていた。Further, although a relatively high quality film can be formed by a vacuum film forming method such as a proximity sublimation method, a vacuum vapor deposition method or a sputtering method, any of the manufacturing methods has high equipment cost, low productivity and large area. It was difficult, and it was an obstacle to cost reduction.
【０００５】そこで、本発明はＣｄＴｅ膜の成膜法を改
善することにより、生産性が高く大面積化も容易な方法
で、高効率な太陽電池を作製することを目的とするもの
である。Therefore, an object of the present invention is to improve the method of forming a CdTe film to produce a highly efficient solar cell by a method which has high productivity and is easy to increase the area.
【０００６】[0006]
【課題を解決するための手段】本発明は、ＣｄＳ膜上へ
のＣｄＴｅ膜の成膜を、ＣｄＴｅ乾燥膜を形成したガラ
ス基板とＣｄＳ膜を形成したガラス基板を、ＣｄＴｅ乾
燥膜とＣｄＳ膜が相対する向きに向かい合わせに密着さ
せて熱処理を加え、ＣｄＳ膜上に緻密なＣｄＴｅ膜のみ
を形成するというものである。According to the present invention, a CdTe film is formed on a CdS film by using a CdTe dry film-formed glass substrate and a CdS film-formed glass substrate as a CdTe dry film and a CdS film. Heat treatment is applied in close contact with each other in the opposite direction to form only a dense CdTe film on the CdS film.
【０００７】[0007]
【作用】この製造法では、塗布・焼結法で形成される高
抵抗な多孔質ＣｄＴｅ膜がＣｄＴｅ乾燥膜を形成した太
陽電池を作製しないガラス基板上にのみ形成され、Ｃｄ
Ｓ膜上には緻密なＣｄＴｅ膜のみが形成されるようにな
る。これにより太陽電池の内部抵抗が減少し、曲線因子
が向上する。In this manufacturing method, the high-resistance porous CdTe film formed by the coating / sintering method is formed only on the glass substrate on which the solar cell having the CdTe dry film is not manufactured, and CdTe is formed.
Only the dense CdTe film is formed on the S film. This reduces the internal resistance of the solar cell and improves the fill factor.
【０００８】さらには熱処理の際、ＣｄＴｅ乾燥膜を形
成したガラス基板とＣｄＳ膜を成膜したガラス基板を、
ＣｄＴｅ乾燥膜とＣｄＳ膜が相対する向きに向かい合わ
せに隙間を開けずに密着させることにより、設備コスト
が低く生産性の優れた大気圧での熱処理でも成膜速度を
落とさずに成膜することが可能となる。Further, at the time of heat treatment, a glass substrate having a CdTe dry film formed thereon and a glass substrate having a CdS film formed thereon are
By adhering the CdTe dry film and the CdS film to face each other in opposite directions without making a gap, it is possible to form a film without slowing the film formation rate even at a heat treatment at atmospheric pressure, which is low in equipment cost and excellent in productivity. Is possible.
【０００９】[0009]
【実施例】（実施例１）以下、本発明の一実施例につい
て説明する。まず、Ｃｄ粉末およびＴｅ粉末を粉砕する
ことにより作製したＣｄ，ＴｅおよびＣｄＴｅの微粉末
にプロピレングリコールを溶媒として加え、混練してＣ
ｄＴｅペーストを作製する。ガラス基板１上に前記Ｃｄ
Ｔｅペーストを塗布し、１２０℃で約１時間乾燥して膜
厚１５μｍのＣｄＴｅ乾燥膜２を得る。図１に示すよう
にＣｄＴｅ乾燥膜２を形成したガラス基板１と膜厚２０
μｍのＣｄＳ膜３を成膜している１０cm角ガラス（コー
ニング♯７０５９）基板４を前記ＣｄＴｅ乾燥膜とＣｄ
Ｓ膜が相対する向きに密着させる。そして大気圧下の窒
素雰囲気中で、保持温度６６０℃で６０分熱処理するこ
とによって、前記ＣｄＳ膜３上に緻密なＣｄＴｅ膜５を
形成する。その後、塗布・焼結法でカーボン電極７、Ａ
ｇ電極８、Ａｇ・Ｉｎ電極９を形成し、図２に示す構造
の太陽電池を作製した。EXAMPLE 1 An example of the present invention will be described below. First, propylene glycol is added as a solvent to a fine powder of Cd, Te and CdTe produced by crushing Cd powder and Te powder, and the mixture is kneaded to obtain C.
Make a dTe paste. The Cd on the glass substrate 1
A Te paste is applied and dried at 120 ° C. for about 1 hour to obtain a CdTe dry film 2 having a film thickness of 15 μm. As shown in FIG. 1, a glass substrate 1 having a CdTe dry film 2 formed thereon and a film thickness 20
A 10 cm square glass (Corning # 7059) substrate 4 on which a CdS film 3 having a thickness of μm is formed is coated with the CdTe dry film and CdTe.
The S films are closely contacted in opposite directions. Then, a dense CdTe film 5 is formed on the CdS film 3 by heat treatment at a holding temperature of 660 ° C. for 60 minutes in a nitrogen atmosphere under atmospheric pressure. After that, the carbon electrode 7, A is applied by the coating and sintering method.
A g-electrode 8 and an Ag.In electrode 9 were formed to fabricate a solar cell having the structure shown in FIG.
【００１０】（比較例１）図３に示すように、前記ガラ
ス基板４に成膜した前記ＣｄＳ膜３上に、ＣｄＴｅペー
ストを塗布・乾燥する。アルミナ製の熱処理容器１１内
に前記ガラス基板４をＣｄＴｅ乾燥膜１０を形成してい
る面を上にして置き、石英の熱処理容器の蓋１２をかぶ
せ、窒素雰囲気中大気圧で保持温度６６０℃で６０分熱
処理し、ＣｄＳ膜上にＣｄＴｅ膜を得る。その後、塗布
・焼結法でカーボン電極７、Ａｇ電極８、Ａｇ・Ｉｎ電
極９を形成し、図２に示す構造の太陽電池を作製した。Comparative Example 1 As shown in FIG. 3, a CdTe paste is applied and dried on the CdS film 3 formed on the glass substrate 4. The glass substrate 4 is placed in a heat treatment container 11 made of alumina with the surface on which the CdTe dry film 10 is formed facing up, and the lid 12 of the heat treatment container made of quartz is covered, and the holding temperature is 660 ° C. in a nitrogen atmosphere at atmospheric pressure. Heat treatment is performed for 60 minutes to obtain a CdTe film on the CdS film. After that, a carbon electrode 7, an Ag electrode 8 and an Ag.In electrode 9 were formed by a coating / sintering method to fabricate a solar cell having a structure shown in FIG.
【００１１】（比較例２）図１に示すようにＣｄＴｅ乾
燥膜２を形成した前記ガラス基板１と前記ＣｄＳ膜３を
成膜している前記ガラス基板４をＣｄＴｅ乾燥膜とＣｄ
Ｓ膜が相対する向きに密着させる。そして窒素雰囲気中
大気圧で、保持温度７５０℃で６０分熱処理することに
よって、前記ＣｄＳ膜３上に緻密なＣｄＴｅ膜５を形成
する。その後、塗布・焼結法でカーボン電極７、Ａｇ電
極８、Ａｇ・Ｉｎ電極９を形成し、図２に示す構造と同
じ太陽電池を作製した。Comparative Example 2 As shown in FIG. 1, the glass substrate 1 on which the CdTe dry film 2 is formed and the glass substrate 4 on which the CdS film 3 is formed are the CdTe dry film and the CdTe film.
The S films are closely contacted in opposite directions. Then, a dense CdTe film 5 is formed on the CdS film 3 by performing a heat treatment at a holding temperature of 750 ° C. for 60 minutes in a nitrogen atmosphere at atmospheric pressure. After that, a carbon electrode 7, an Ag electrode 8 and an Ag.In electrode 9 were formed by a coating / sintering method to fabricate a solar cell having the same structure as shown in FIG.
【００１２】（比較例３）図１に示すように前記ＣｄＴ
ｅ乾燥膜２を形成した前記ガラス基板１と前記ＣｄＳ膜
３を成膜している前記ガラス基板４をＣｄＴｅ乾燥膜と
ＣｄＳ膜が相対する向きに密着させる。そして大気圧下
の窒素雰囲気中で、保持温度４５０℃で６０分熱処理す
ることによって、前記ＣｄＳ膜３上に緻密なＣｄＴｅ膜
５を形成する。その後、塗布・焼結法でカーボン電極
７、Ａｇ電極８、Ａｇ・Ｉｎ電極９を形成して図２に示
す構造と同じ太陽電池を作製した。(Comparative Example 3) As shown in FIG.
The glass substrate 1 on which the e dry film 2 is formed and the glass substrate 4 on which the CdS film 3 is formed are adhered to each other so that the CdTe dry film and the CdS film face each other. Then, a dense CdTe film 5 is formed on the CdS film 3 by heat treatment at a holding temperature of 450 ° C. for 60 minutes in a nitrogen atmosphere under atmospheric pressure. After that, a carbon electrode 7, an Ag electrode 8, and an Ag.In electrode 9 were formed by a coating / sintering method to fabricate a solar cell having the same structure as shown in FIG.
【００１３】（比較例４）図４に示すように前記ＣｄＴ
ｅ乾燥膜２を形成した前記ガラス基板１と前記ＣｄＳ膜
３を成膜している前記ガラス基板４をＣｄＴｅ乾燥膜と
ＣｄＳ膜が相対する向きに１mmの隙間をあけて配置す
る。そして大気圧下の窒素雰囲気中で、保持温度６６０
℃で６０分熱処理することによって、前記ＣｄＳ膜３上
に緻密なＣｄＴｅ膜５を形成する。その後、塗布・焼結
法でカーボン電極７、Ａｇ電極８、Ａｇ・Ｉｎ電極９を
形成して図２に示す構造と同じ太陽電池を作製した。(Comparative Example 4) As shown in FIG.
The glass substrate 1 on which the e dry film 2 is formed and the glass substrate 4 on which the CdS film 3 is formed are arranged with a gap of 1 mm in a direction in which the CdTe dry film and the CdS film face each other. Then, in a nitrogen atmosphere under atmospheric pressure, a holding temperature of 660
A dense CdTe film 5 is formed on the CdS film 3 by heat treatment at 60 ° C. for 60 minutes. After that, a carbon electrode 7, an Ag electrode 8, and an Ag.In electrode 9 were formed by a coating / sintering method to fabricate a solar cell having the same structure as shown in FIG.
【００１４】これらの各太陽電池の諸特性の比較を表１
に示す。Table 1 shows a comparison of various characteristics of these solar cells.
Shown in.
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【発明の効果】以上のように本発明の太陽電池では、Ｃ
ｄＴｅ膜の成膜をＣｄＴｅ乾燥膜を形成したガラス基板
とＣｄＳ膜を形成したガラス基板を、ＣｄＴｅ乾燥膜と
ＣｄＳ膜が相対する向きに向かい合わせて密着させ、熱
処理を加えることによりＣｄＳ膜上にＣｄＴｅ膜を成膜
するという方法で行っているため、生産性に優れ緻密な
ＣｄＴｅ膜のみを成膜できる。しかも従来の塗布・焼結
法に比べ、高抵抗な多孔質ＣｄＴｅ膜は存在しないの
で、セル特性は内部抵抗の減少により曲線因子が向上し
た。この方法は近接昇華法、真空蒸着法あるいはスパッ
タ法などの真空成膜と比べると、設備費が安く大面積化
も行いやすいなど低コスト化が容易である。As described above, in the solar cell of the present invention, C
The dTe film is formed by adhering a CdTe dry film-formed glass substrate and a CdS film-formed glass substrate so that the CdTe dry film and the CdS film face each other in opposite directions, and heat treatment is applied to the CdS film on the CdS film. Since the method is such that the CdTe film is formed, only the dense CdTe film can be formed with excellent productivity. Moreover, since there is no porous CdTe film having a high resistance as compared with the conventional coating / sintering method, the fill factor is improved in the cell characteristics due to the decrease in the internal resistance. Compared with vacuum deposition such as the proximity sublimation method, vacuum deposition method or sputtering method, this method is easy to reduce the cost, such as low equipment cost and large area.
【図１】本発明の実施例における太陽電池素子の製法を
示す構造断面図FIG. 1 is a structural cross-sectional view showing a method for manufacturing a solar cell element according to an embodiment of the present invention.
【図２】本発明および比較例における太陽電池の構造断
面図FIG. 2 is a structural cross-sectional view of a solar cell according to the present invention and a comparative example.
【図３】比較例１における素子の製法を示す構造断面図FIG. 3 is a structural cross-sectional view showing a method for manufacturing an element in Comparative Example 1.
【図４】比較例４における素子の製法を示す構造断面図FIG. 4 is a structural cross-sectional view showing a method for manufacturing an element in Comparative Example 4.
１ ガラス基板 ２ ＣｄＴｅ乾燥膜 ３ ＣｄＳ膜 ４ ガラス基板 1 Glass Substrate 2 CdTe Dry Film 3 CdS Film 4 Glass Substrate
Claims (3)
を光吸収層とする太陽電池において、前記ＣｄＴｅ膜を
形成する際Ｃｄ，Ｔｅ，ＣｄＴｅおよび有機溶媒からな
るペーストをガラス上に塗布・乾燥することにより得た
ＣｄＴｅ乾燥膜を形成したガラス基板と前記ＣｄＳ膜を
形成したガラス基板を、前記ＣｄＴｅ乾燥膜と前記Ｃｄ
Ｓ膜が相対する向きに向かい合わせて密着させ熱処理す
ることにより前記ＣｄＳ膜上にＣｄＴｅ膜を形成するこ
とを特徴とする太陽電池の製造法。1. In a solar cell using a CdS film on the light incident side and a CdTe film as a light absorbing layer, a paste containing Cd, Te, CdTe and an organic solvent is applied onto glass when the CdTe film is formed. The glass substrate on which the CdTe dry film obtained by drying and the glass substrate on which the CdS film were formed are replaced with the CdTe dry film and the CdTe film.
A method for manufacturing a solar cell, comprising forming a CdTe film on the CdS film by closely contacting and facing each other in an opposite direction and heat-treating.
℃での熱処理である請求項１記載の太陽電池の製造法。2. The heat treatment is at least 500-700.
The method for producing a solar cell according to claim 1, wherein the heat treatment is at a temperature of ° C.
で行われる請求項１記載の太陽電池の製造法。3. The method for manufacturing a solar cell according to claim 1, wherein the heat treatment is performed in an inert atmosphere under atmospheric pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5237821A JPH0794769A (en) | 1993-09-24 | 1993-09-24 | Solar cell manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5237821A JPH0794769A (en) | 1993-09-24 | 1993-09-24 | Solar cell manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0794769A true JPH0794769A (en) | 1995-04-07 |
Family
ID=17020905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5237821A Pending JPH0794769A (en) | 1993-09-24 | 1993-09-24 | Solar cell manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0794769A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997045880A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Battery Industrial Co., Ltd. | METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM |
| CN102339903A (en) * | 2011-07-26 | 2012-02-01 | 友达光电股份有限公司 | Method for forming photoelectric conversion layer |
-
1993
- 1993-09-24 JP JP5237821A patent/JPH0794769A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997045880A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Battery Industrial Co., Ltd. | METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM |
| US5994642A (en) * | 1996-05-28 | 1999-11-30 | Matsushita Battery Industrial Co., Ltd. | Method for preparing CdTe film and solar cell using the same |
| EP0853345A4 (en) * | 1996-05-28 | 1999-12-08 | Matsushita Battery Ind Co Ltd | PROCESS FOR FORMING A CADMIUM TELLIDE FILM AND A PHOTOPILE USING THE SAME |
| CN102339903A (en) * | 2011-07-26 | 2012-02-01 | 友达光电股份有限公司 | Method for forming photoelectric conversion layer |
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