JPH0811355B2 - Polishing equipment - Google Patents
Polishing equipmentInfo
- Publication number
- JPH0811355B2 JPH0811355B2 JP4206424A JP20642492A JPH0811355B2 JP H0811355 B2 JPH0811355 B2 JP H0811355B2 JP 4206424 A JP4206424 A JP 4206424A JP 20642492 A JP20642492 A JP 20642492A JP H0811355 B2 JPH0811355 B2 JP H0811355B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- chamber
- hard
- dry
- dish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、ダイヤモンドやサファ
イヤ等の硬脆材を研磨皿を用いて乾式で研磨するの研磨
装置に関するものである。
【０００２】
【従来の技術】従来、ダイヤモンドやサファイヤ等の硬
脆材の研磨加工のうち、ごく微小部分の研磨加工にＳｉ
Ｏ2等の硬質膜を研磨材層とした研磨皿を用いていた。
【０００３】
【発明が解決しようとする課題】硬質膜厚、研磨荷重に
より異なるが、通常の大気中でのダイヤモンドの研磨能
率（単位研磨距離あたりの研磨体積）は０．０３〜０．
０６μｍ3／ｍ程度であった。そのため、容量型ビデオ
ディスクプレーヤ用のダイヤモンド製スタイラス１本あ
たりの先端研磨に４００〜５００ｍの研磨距離を必要と
していたため、研磨皿寿命が短く、コストが高い欠点が
あった。
【０００４】本発明の目的は、上記従来技術の欠点をな
くし、ＳｉＯ2，Ａｌ2Ｏ3，ＳｉＣ，Ｓｉ3Ｎ4，Ｔｉ
Ｃ，ＴｉＮ，ＢＮ等の硬質膜の研磨材層を有する研磨皿
を用いてダイヤモンドやサファイヤ等の硬脆材の被加工
物を乾式で研磨する際、研磨能率を向上させて、研磨皿
の寿命を向上させると共にダイヤモンドやサファイヤ等
の被加工物のコスト低減をはかった研磨装置を提供する
ことにある。
【０００５】
【課題を解決するための手段】本発明は、上記目的を達
成するために、硬脆材の被加工物と硬質膜の研磨材層を
有する研磨皿とを、外気と遮断された研磨雰囲気を形成
した研磨室内に設置し、乾燥空気或いは乾燥したガスを
前記研磨室内に導入又は前記研磨室内を真空排気して前
記研磨室内の研磨雰囲気の湿度を３５％以下になるよう
に乾燥空気或いは乾燥したガス導入手段又は真空排気手
段を前記研磨室内に接続し、前記硬脆材の被加工物と前
記研磨皿とを相対的に運動させる運動手段を備え、該運
動手段で相対的に運動させて前記硬質膜の研磨材層によ
り前記硬脆材の被加工物を乾式で研磨するように構成し
たことを特徴とする研磨装置である。
【０００６】
【作用】前記構成により、ＳｉＯ2，Ａｌ2Ｏ3，Ｓｉ
Ｃ，Ｓｉ3Ｎ4，ＴｉＣ，ＴｉＮ，ＢＮ等の硬質膜の研磨
材層を有する研磨皿による乾式のダイヤモンドやサファ
イヤ等の被加工物の研磨能率を著しく向上させることが
でき、その結果、研磨皿の寿命を向上させると共にダイ
ヤモンドやサファイヤ等の被加工物の大幅なコスト低減
をはかることができる。
【０００７】
【実施例】本発明に係る研磨装置の一実施例を、図１を
参照して説明する。研磨装置は、架台８に取付けられた
スピンドル４にて保持され、表面にＳｉＯ2硬質膜を研
磨材層とした研磨皿１により、送り装置３にて支持され
たダイヤモンドである被加工物２を乾式にて研磨するも
のである。そして、これら研磨皿１、イヤモンドである
被加工物２及び送り装置３を内部に設置した研磨室は、
カバー９にて外気と遮断され、後述するように導入口１
０より乾燥空気或いは乾燥した種々のガスを導入する乾
燥空気或いは乾燥した種々のガス導入手段または真空ポ
ンプにより真空排気する真空排気手段を接続し、研磨室
内の研磨雰囲気を３５％以下の１５％の低湿度まで制御
するものである。
【０００８】研磨室内の湿度を制御する方法は、乾燥空
気或いは乾燥した種々のガス導入手段により導入口１０
から乾燥空気、或いは乾燥した種々のガスを導入して行
なう。また、研磨室内を真空ポンプ（真空排気手段）に
より真空排気して湿度を低下させてもよい。乾燥空気を
研磨室内に導入したときの経過時間と研磨室内の湿度と
の関係は、図２にしめすように極めて速く、湿度がほぼ
１５％まで低下することが分る。研磨室内の研磨雰囲気
の湿度を低くすると、図３に示すように研磨能率（単位
研磨距離あたりの研磨量）が向上することを見いだし
た。同図のように通常の大気中の湿度５０〜６０％で
は、研磨能率が０．１μｍ3／ｍ程度であるのに対し、
本発明の研磨装置を用い、研磨室内の湿度を１５％にす
ると、研磨能率は０．６μｍ3／ｍ以上に向上する。こ
の現象は、研磨皿と被加工物の動摩擦係数は湿度が低い
ほど大きいことからも説明できるものである。以上は、
ダイヤモンドをＳｉＯ2硬質膜で研磨した実施例である
が、同様に吸湿性をもったＡｌ2Ｏ3，ＳｉＣ，Ｓｉ
3Ｎ4，ＴｉＣ，ＴｉＮ，ＢＮ等の硬質膜で、ダイヤモン
ドを研磨する場合でも、同様の低湿度の効果が確認する
ことができる。更にダイヤモンド以外のサファイヤ、Ｃ
ＢＮ（立方晶窒化珪素）、ジルコニアなどの硬脆材に対
して、上記硬質膜を用いても同様な効果が得られる。
【０００９】
【発明の効果】本発明によれば、ダイヤモンドやサファ
イヤ等の高脆材の被加工物とＳｉＯ2，Ａｌ2Ｏ3，Ｓｉ
Ｃ，Ｓｉ3Ｎ4，ＴｉＣ，ＴｉＮ，ＢＮ等の硬質膜の研磨
材層を有する研磨皿とを設置した研磨室内の研磨雰囲気
の湿度を３５％以下になるように構成したことにより、
研磨能率を大幅に向上させることができ、その結果、研
磨皿の寿命を向上させると共にダイヤモンド、サファイ
ヤ、ＣＢＮ（立方晶窒化珪素）、ジュルコニア等の高脆
材の被加工物の大幅なコスト低減をはかることができる
効果を奏する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for dry-polishing hard and brittle materials such as diamond and sapphire using a polishing dish. 2. Description of the Related Art Conventionally, among the polishing processing of hard and brittle materials such as diamond and sapphire, Si is used for polishing a very small portion.
A polishing dish having a hard film of O 2 or the like as an abrasive layer was used. The polishing efficiency of diamond in the ordinary atmosphere (polishing volume per unit polishing distance) is 0.03 to 0.
It was about 06 μm 3 / m. Therefore, since the polishing distance of 400 to 500 m is required for polishing the tip of one diamond stylus for the capacity type video disc player, the polishing plate has a short life and the cost is high. The object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to make SiO 2 , Al 2 O 3 , SiC, Si 3 N 4 and Ti.
Improves the polishing efficiency when dry-processing a hard-brittle workpiece such as diamond or sapphire using a polishing dish having a hard film polishing layer such as C, TiN, BN, etc. It is an object of the present invention to provide a polishing apparatus which improves the cost and reduces the cost of a workpiece such as diamond or sapphire. According to the present invention, in order to achieve the above object, a work piece made of a hard and brittle material and a polishing dish having a hard film abrasive layer are isolated from the outside air. It is installed in a polishing chamber in which a polishing atmosphere is formed, and dry air or a dry gas is introduced into the polishing chamber or the polishing chamber is evacuated to dry air so that the humidity of the polishing atmosphere in the polishing chamber is 35% or less. Alternatively, a dry gas introducing means or a vacuum evacuation means is connected to the polishing chamber, and a moving means for relatively moving the work piece of the hard and brittle material and the polishing dish is provided, and the moving means relatively moves. In this case, the polishing apparatus is configured to dry-process the hard brittle material to be processed by the abrasive layer of the hard film. With the above structure, SiO 2 , Al 2 O 3 , Si
It is possible to remarkably improve the polishing efficiency of a dry diamond or sapphire workpiece by using a polishing dish having a hard film abrasive layer such as C, Si 3 N 4 , TiC, TiN, and BN. It is possible to improve the life of the plate and to significantly reduce the cost of the workpiece such as diamond and sapphire. An embodiment of a polishing apparatus according to the present invention will be described with reference to FIG. The polishing apparatus is held by a spindle 4 mounted on a pedestal 8, and a workpiece 2 which is a diamond supported by a feeding apparatus 3 is supported by a polishing dish 1 having an SiO 2 hard film as an abrasive layer on its surface. It is a dry type. Then, the polishing chamber in which the polishing dish 1, the workpiece 2 that is an earmond, and the feeding device 3 are installed is
The cover 9 shields the air from the outside air and introduces the inlet 1 as described later.
From 0 to dry air or various dry gas is introduced. Connected to dry air or various dry gas introduction means or vacuum exhaust means to evacuate by a vacuum pump, and the polishing atmosphere in the polishing chamber is 35% or less of 15% or less. It controls to low humidity. The method of controlling the humidity in the polishing chamber is carried out by introducing an inlet port 10 by means of dry air or various dry gas introducing means.
From which dry air or various dry gases are introduced. Further, the polishing chamber may be evacuated by a vacuum pump (vacuum evacuation means) to reduce the humidity. It can be seen that the relationship between the elapsed time when the dry air is introduced into the polishing chamber and the humidity inside the polishing chamber is extremely fast as shown in FIG. 2, and the humidity drops to almost 15%. It was found that when the humidity of the polishing atmosphere in the polishing chamber is lowered, the polishing efficiency (the polishing amount per unit polishing distance) is improved as shown in FIG. As shown in the figure, while the normal atmospheric humidity is 50 to 60%, the polishing efficiency is about 0.1 μm 3 / m, while
By using the polishing apparatus of the present invention and setting the humidity in the polishing chamber to 15%, the polishing efficiency is improved to 0.6 μm 3 / m or more. This phenomenon can also be explained by the fact that the coefficient of dynamic friction between the polishing dish and the work piece increases as the humidity decreases. The above is
This is an example in which diamond is polished with a SiO 2 hard film, but Al 2 O 3 , SiC, Si which also have hygroscopicity.
Even when diamond is polished with a hard film of 3 N 4 , TiC, TiN, BN, etc., the same effect of low humidity can be confirmed. Furthermore, sapphire other than diamond, C
Similar effects can be obtained by using the above hard film for hard and brittle materials such as BN (cubic silicon nitride) and zirconia. According to the present invention, a highly brittle material to be processed such as diamond or sapphire and SiO 2 , Al 2 O 3 or Si are processed.
By configuring the humidity of the polishing atmosphere in the polishing chamber in which the polishing dish having the hard film abrasive layer such as C, Si 3 N 4 , TiC, TiN, and BN is set to 35% or less,
The polishing efficiency can be significantly improved, and as a result, the life of the polishing dish can be improved and the cost of the workpiece of highly brittle materials such as diamond, sapphire, CBN (cubic silicon nitride), and zirconia can be significantly reduced. The effect that can be measured is produced.
【図面の簡単な説明】
【図１】本発明に係る研磨装置の一実施例を示す断面
図。
【図２】研磨室内に乾燥空気を導入した場合の時間と湿
度の関係を示すグラフ。
【図３】研磨雰囲気湿度の研磨能率への影響を示す図。
【符号の説明】
１…研磨皿、
２…被加工物、
３…送り装置、
９…カバー。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing an embodiment of a polishing apparatus according to the present invention. FIG. 2 is a graph showing the relationship between time and humidity when dry air is introduced into the polishing chamber. FIG. 3 is a diagram showing the influence of polishing atmosphere humidity on polishing efficiency. [Explanation of Codes] 1 ... Polishing dish, 2 ... Workpiece, 3 ... Feeding device, 9 ... Cover.
Claims (1)
皿とを、外気と遮断された研磨雰囲気を形成した研磨室
内に設置し、乾燥空気或いは乾燥したガスを前記研磨室
内に導入又は前記研磨室内を真空排気して前記研磨室内
の研磨雰囲気の湿度を３５％以下になるように乾燥空気
或いは乾燥したガス導入手段又は真空排気手段を前記研
磨室内に接続し、前記硬脆材の被加工物と前記研磨皿と
を相対的に運動させる運動手段を備え、該運動手段で相
対的に運動させて前記硬質膜の研磨材層により前記硬脆
材の被加工物を乾式で研磨するように構成したことを特
徴とする研磨装置。[Claims] 1. Polishing with hard brittle material and hard film abrasive layer
A polishing chamber that creates a polishing atmosphere that isolates the dish from the outside air.
Installed inside, dry air or dry gas is supplied to the polishing chamber.
Introduced into the chamber or evacuated the polishing chamber to evacuate the polishing chamber.
Dry air so that the humidity of the polishing atmosphere is less than 35%
Alternatively, dry gas introduction means or vacuum exhaust means may be used for the above-mentioned polishing.
Connected to the polishing chamber, the workpiece of the hard and brittle material and the polishing dish
And a movement means for relatively moving the
The abrasive layer of the hard film is moved in opposite directions to cause the hard brittleness.
The feature is that it is configured to dry-process the work piece of the material.
Polishing equipment to collect .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4206424A JPH0811355B2 (en) | 1992-08-03 | 1992-08-03 | Polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4206424A JPH0811355B2 (en) | 1992-08-03 | 1992-08-03 | Polishing equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21540382A Division JPS59107847A (en) | 1982-12-10 | 1982-12-10 | Method and device for grinding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05185356A JPH05185356A (en) | 1993-07-27 |
| JPH0811355B2 true JPH0811355B2 (en) | 1996-02-07 |
Family
ID=16523150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4206424A Expired - Lifetime JPH0811355B2 (en) | 1992-08-03 | 1992-08-03 | Polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0811355B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111251133B (en) * | 2020-02-25 | 2025-07-01 | 中国地质大学（北京） | Diamond grinding and polishing processing equipment and processing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834254B2 (en) * | 1974-09-30 | 1983-07-26 | 株式会社日立製作所 | Kenmasouchi |
-
1992
- 1992-08-03 JP JP4206424A patent/JPH0811355B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05185356A (en) | 1993-07-27 |
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