JPH0817141B2 - Conductive composition for ceramic capacitor terminal electrodes - Google Patents
Conductive composition for ceramic capacitor terminal electrodesInfo
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- JPH0817141B2 JPH0817141B2 JP18895888A JP18895888A JPH0817141B2 JP H0817141 B2 JPH0817141 B2 JP H0817141B2 JP 18895888 A JP18895888 A JP 18895888A JP 18895888 A JP18895888 A JP 18895888A JP H0817141 B2 JPH0817141 B2 JP H0817141B2
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は、セラミックコンデンサの端子電極を形成す
るための導電性組成物であり、特にチタン酸バリウム系
積層コンデンサの端子電極付近に生じるクラックを防止
した電極組成物に関する。TECHNICAL FIELD The present invention relates to a conductive composition for forming a terminal electrode of a ceramic capacitor, and particularly, to prevent cracks generated near the terminal electrode of a barium titanate-based multilayer capacitor. It relates to an electrode composition.
従来の技術 積層コンデンサ等、チップ状セラミックコンデンサの
端子電極は、銀、パラジウム、金、白金、銅、ニッケル
又はこれらの混合物などの導電性粉末と、ガラス質フリ
ット等の無機結合剤とを有機ビヒクルに分散させたペー
スト状の組成物を、チップ素体の端子部に塗布し、焼付
けすることによって形成される。2. Description of the Related Art The terminal electrode of a chip-shaped ceramic capacitor such as a multilayer capacitor is made of an organic vehicle including conductive powder such as silver, palladium, gold, platinum, copper, nickel or a mixture thereof and an inorganic binder such as a glass frit. It is formed by applying the paste composition dispersed in the above to the terminal portion of the chip element body and baking it.
コンデンサチップの回路基板への実装は、半田付けに
よって行うのが一般的であるが、電極中の導電成分が貴
金属のような半田に溶解し易い金属である場合は、耐半
田溶解性を高めるため電極表面に半田に溶解し難いニッ
ケル、銅などの金属の薄膜を電解メッキ等の手段によっ
て形成し、次いでその上に半田付性の良い錫や錫−鉛合
金などを被覆し、その後半田付処理を行っている。Mounting the capacitor chip on the circuit board is generally done by soldering, but if the conductive component in the electrode is a metal such as a noble metal that is easily dissolved in the solder, to improve the solder dissolution resistance. A thin film of nickel, copper, or other metal that is difficult to dissolve in solder is formed on the electrode surface by means such as electrolytic plating, and then tin or tin-lead alloy, which has good solderability, is coated on it, and then the soldering process is performed. It is carried out.
ところが、従来この種の導電性組成物は無機結合剤に
硼珪酸鉛系や硼珪酸ビスマス系のガラス質フリットを用
いているが、この組成物から形成された導電被膜に電解
メッキ処理を施したとき、端子とコンデンサ素体間の接
合強度が劣化する問題が生じ、このため電極材料、特に
電極に使用するガラス質フリットの改良がなされてき
た。例えば特公昭60−37562号は、鉛を含有しないZnO−
B2O3−SiO2ガラスを使用したペーストで酸処理、電解メ
ッキの可能な導体膜を形成するものである。又、特公昭
62−1662号には、アルカリ金属及びアルカリ土類金属を
含有する特定の組成の硼珪酸亜鉛系ガラス質フリットを
用いた導電塗料が記載されている。しかしこれらのガラ
スを使用することによって、電解メッキによる密着強度
の劣化はある程度改善されるものの、電極表面にガラス
が分布してメッキが一様に形成されず、このため半田の
付着性が不十分になる欠点がある。However, a conductive composition of this type has conventionally used a glass frit of lead borosilicate type or bismuth borosilicate type as an inorganic binder, but a conductive coating formed from this composition was subjected to electrolytic plating treatment. At this time, there arises a problem that the bonding strength between the terminal and the capacitor element body is deteriorated, and therefore, the electrode material, particularly the vitreous frit used for the electrode, has been improved. For example, Japanese Examined Patent Publication No. 60-37562 describes ZnO-containing no lead.
A paste using B 2 O 3 —SiO 2 glass is used to form a conductor film that can be subjected to acid treatment and electrolytic plating. Also,
No. 62-1662 describes a conductive coating material using a zinc borosilicate-based glassy frit having a specific composition containing an alkali metal and an alkaline earth metal. However, although the deterioration of the adhesion strength due to electrolytic plating is improved to some extent by using these glasses, the glass is distributed on the electrode surface and the plating is not formed uniformly, which results in insufficient solder adhesion. There is a drawback that becomes.
又従来、電解メッキ処理したコンデンサを半田付する
際、半田浴の温度が高温で300℃以上にも及ぶため、半
田浴にコンデンサチップを浸漬するときに急激な温度変
化が加わることになり、このため信頼性に問題を生ず
る。例えば積層セラミックコンデンサを製造する場合、
半田付時に加わるサーマルショックによりコンデンサ素
体にしばしばクラッチが発生し、コンデンサとして使用
できなくなることがある。このクラックは、半田付時の
他、コンデンサ製造工程において大きな機械的応力が加
わったときなどにも生ずることがある。このようなクラ
ックの発生は、特に内部電極材料にパラジウム系又は銀
−パラジウム系の金属を使用し、端子電極を銀−パラジ
ウム又は銀系で形成したときに多く、又機械的強度が比
較的弱いBaTiO3系の積層コンデンサで多発しており、大
きな問題となっている。In addition, when soldering a capacitor that has been electrolytically plated, the temperature of the solder bath has reached a high temperature of 300 ° C or higher, so a sharp temperature change is applied when the capacitor chip is immersed in the solder bath. Therefore, there arises a problem in reliability. For example, when manufacturing a monolithic ceramic capacitor,
A thermal shock applied at the time of soldering often causes a clutch to be generated in the capacitor element body, so that it cannot be used as a capacitor. This crack may occur not only when soldering but also when a large mechanical stress is applied in the capacitor manufacturing process. The occurrence of such cracks is particularly large when a palladium-based or silver-palladium-based metal is used for the internal electrode material and the terminal electrode is formed of silver-palladium or silver-based, and the mechanical strength is relatively weak. This is a big problem because it occurs frequently in BaTiO 3 -based multilayer capacitors.
発明が解決しようとする課題 本発明の目的は、セラミックコンデンサ端子電極のガ
ラス結合剤の改良により、端子とコンデンサ素体との接
合性及び半田付性を改善し、更に積層コンデンサの半田
付時の熱衝撃等によるクラックの発生を防止することに
ある。The object of the present invention is to improve the bondability and solderability between the terminal and the capacitor element body by improving the glass binder of the ceramic capacitor terminal electrode, and further to improve the solderability of the multilayer capacitor. This is to prevent the generation of cracks due to thermal shock.
課題を解決するための手段 本発明は、貴金属粉末100重量部と、ガラスを構成す
る各元素の合計が酸化物換算でそれぞれ B2O3 15〜35重量％ ZnO 35〜60重量％ SiO2 １〜15重量％ Al2O3 １〜15重量％ PbO 0.5〜12重量％ の比率となるような１種又は２種以上のガラス質フリッ
ト0.2〜20重量部とを有機ビヒクルに分散させてなるセ
ラミックコンデンサ端子電極用導電性組成物であり、又
第２の発明は貴金属粉末100重量部と、ガラスを構成す
る各元素の合計が酸化物換算でそれぞれ B2O3 15〜35重量％ ZnO 35〜60重量％ SiO2 １〜15重量％ Al2O3 １〜15重量％ PbO 0.5〜12重量％ BaO及びCaOから選ばれる少なくとも１種 ２〜28重量％ の比率となるような１種又は２種以上のガラス質フリッ
ト0.2〜20重量部とを有機ビヒクルに分散させてなるセ
ラミックコンデンサ端子電極用導電性組成物である。Means for Solving the Problems In the present invention, 100 parts by weight of a noble metal powder and the total of each element constituting glass are B 2 O 3 15 to 35% by weight in terms of oxide ZnO 35 to 60% by weight SiO 2 1 -15% by weight Al 2 O 3 1-15% by weight PbO 0.5-12% by weight 0.2-20 parts by weight of one or more glassy frits dispersed in an organic vehicle A second aspect of the present invention is a conductive composition for a capacitor terminal electrode, and the second invention is 100 parts by weight of noble metal powder and the total of each element constituting glass is B 2 O 3 15 to 35% by weight in terms of oxide ZnO 35 to 60 wt% SiO 2 1 to 15 wt% Al 2 O 3 1 to 15 wt% PbO 0.5 to 12 wt% At least one selected from BaO and CaO 2 to 28 wt% 1 or 2 types 0.2-20 parts by weight of the above glass frit is dispersed in an organic vehicle to form a ceramic capacitor terminal electrode. A use conductive composition.
作用 本発明の特定組成の硼珪酸鉛−亜鉛−アルミニウム系
ガラスを結合剤として使用した導電性組成物は、コンデ
ンサ素体に焼付けすることにより、コンデンサ素体との
接合強度が強く、電解メッキを施しても接合強度の劣化
がない端子電極が形成される。又電極表面にガラスの分
布が少なく、従ってメッキの付着性及び半田の付着性が
優れている。又積層コンデンサの実装時の半田付に際し
てのサーマルショックや、その他の機械的衝撃によるコ
ンデンサ素体へのクラックの発生が著しく減少する。Action The conductive composition using the lead borosilicate-zinc-aluminum-based glass of the specific composition of the present invention as a binder has a strong bonding strength with the capacitor body by baking, and electrolytic plating is performed. A terminal electrode is formed in which the bonding strength does not deteriorate even when applied. Further, the distribution of glass on the electrode surface is small, and therefore the adhesion of plating and the adhesion of solder are excellent. Further, the thermal shock at the time of soldering when mounting the multilayer capacitor and the occurrence of cracks in the capacitor body due to other mechanical shocks are significantly reduced.
積層コンデンサのクラックの発生機構については明確
には解っていないが、例えばパラジウム系の内部電極を
用いた積層セラミックコンデンサに、銀系の端子電極組
成物を塗布し、焼成すると、パラジウムと銀の拡散速度
の違いから、端子中の銀が、端子に直接結合している内
部電極中に拡散し、端子近くの内部電極が体積膨脹を起
こして周囲のセラミック誘電体層を圧迫する。このため
コンデンサ素体の内部電極が露出していない側面部に引
張り応力の集中が起こり、その結果セラミック誘電体層
に内部歪み、或いは極めて微細な亀裂を生じさせるもの
と考えられる。そして端子部に電解メッキを行なった
後、実装工程で高温の半田浴へ浸漬する際、急激な昇温
によってこの歪み又は微細な亀裂が拡大され、特に機械
的強度があまり強くないBaTiO3のようなセラミック誘電
体の場合、大きくクラックに至ると考えられる。Although the mechanism of crack generation in a multilayer capacitor is not clearly understood, for example, when a silver-based terminal electrode composition is applied to a multilayer ceramic capacitor using a palladium-based internal electrode and fired, diffusion of palladium and silver occurs. Due to the difference in speed, silver in the terminals diffuses into the internal electrodes that are directly bonded to the terminals, causing the internal electrodes near the terminals to expand in volume and squeeze the surrounding ceramic dielectric layer. Therefore, it is considered that the tensile stress is concentrated on the side surface where the internal electrodes of the capacitor body are not exposed, and as a result, internal strain or extremely fine cracks are generated in the ceramic dielectric layer. Then, after electroplating the terminals, when immersed in a high temperature solder bath during the mounting process, this strain or minute cracks expand due to a sudden rise in temperature, especially when BaTiO 3 is not very strong in mechanical strength. In the case of such a ceramic dielectric, it is thought that it will lead to large cracks.
本発明においてガラスを前記の組成とすると、端子電
極とコンデンサ素体との界面に強靭な結晶化ガラスの薄
い層が形成され、この層が形成されるとクラックが発生
しにくくなることが判明した。この層は分析の結果、亜
鉛系の結晶化ガラス中にZnOとTiO2を主成分とする結晶
が析出したものであるが、これは端子電極の焼成時、軟
化したガラスをフラックスとしてコンデンサ素体の一部
が分解され、端子電極のガラスの構成成分であるZnOと
反応したものではないかと推定される。この素体の分解
と反応層が生成する現象に伴って、前述の内部電極の膨
脹に起因するセラミックの内部歪み、及び半田付時の急
激な温度変化による歪みが緩和され、加えてクラック発
生箇所の機械的強度が増大するため、種々の熱衝撃や機
械的衝撃を受けてもクラックの発生が抑制されると考え
られる。It has been found that when the glass has the above composition in the present invention, a thin layer of tough crystallized glass is formed at the interface between the terminal electrode and the capacitor body, and cracks are less likely to occur when this layer is formed. . As a result of analysis, this layer is a crystal of Zn-based crystallized glass with ZnO and TiO 2 as the main components.This is because the softened glass was used as a flux during the firing of the terminal electrode to form a capacitor element body. It is presumed that some of the metal was decomposed and reacted with ZnO, which is a constituent component of the glass of the terminal electrode. Due to the decomposition of the element body and the phenomenon of generation of the reaction layer, the internal strain of the ceramic due to the expansion of the internal electrode and the strain due to the rapid temperature change at the time of soldering are alleviated. It is considered that the occurrence of cracks is suppressed even when subjected to various thermal shocks and mechanical shocks, because the mechanical strength of the steel is increased.
更にガラス質フリットとコンデンサ素体とが反応して
接着しているため、端子とコンデンサ素体間の接合強度
も著しく改善され、電解メッキ後も強度の劣化が起こら
ないと考えられる。Further, since the glass frit and the capacitor element body react and adhere to each other, the bonding strength between the terminal and the capacitor element body is significantly improved, and it is considered that the strength does not deteriorate even after electrolytic plating.
第二の発明においては、第一の発明の硼珪酸鉛−亜鉛
−アルミニウムガラスにBaO及び／又はCaOを特定量添加
するが、この添加により素体との接合強度が更に大きく
なり、又膜の緻密性が改善される。焼成膜の膜密度が向
上すると、メッキ工程でメッキ液の浸入が防止され、従
ってメッキ液の滲込みに起因する絶縁抵抗の低下や、メ
ッキ後の高温加熱時閉込められた水分が膨脹、破裂する
いわゆるポップコーン現象が防止されるので、信頼性が
向上する。In the second invention, a specific amount of BaO and / or CaO is added to the lead borosilicate-zinc-aluminum glass of the first invention, but this addition further increases the bonding strength with the element body, and The compactness is improved. When the film density of the fired film is improved, the penetration of the plating solution is prevented in the plating process, so the insulation resistance is reduced due to the penetration of the plating solution, and the moisture trapped during high temperature heating after plating expands and bursts. Since the so-called popcorn phenomenon is prevented, the reliability is improved.
ガラスの組成を限定した理由は次の通りである。 The reason for limiting the composition of glass is as follows.
B2O3は10重量％未満ではガラス化が困難であり、35重
量％を越えると軟化温度が高くなり、又失透するので望
ましくない。If B 2 O 3 is less than 10% by weight, vitrification is difficult, and if it exceeds 35% by weight, the softening temperature becomes high and devitrification occurs, which is not desirable.
ZnOはコンデンサ成分と反応して、素体との密着強度
を改善するとともにクラックを防止すると考えられる
が、35重量％より少ないと反応層の形成が不十分で効果
がなく、又60重量％を越えるとガラス化が困難になる。It is considered that ZnO reacts with the capacitor component to improve the adhesion strength with the element body and prevent cracks, but if it is less than 35% by weight, the formation of the reaction layer is insufficient and there is no effect. If it exceeds, vitrification becomes difficult.
SiO2は、１重量％未満では耐酸性が低く、15重量％よ
り多いと軟化温度が高くなりすぎるので望ましくない。If SiO 2 is less than 1% by weight, the acid resistance is low, and if it exceeds 15% by weight, the softening temperature becomes too high, which is not desirable.
Al2O3はガラスを安定化させるために配合する。配合
量が１重量％未満では失透が起こり易く、素体とガラス
との反応が均一に起こりにくくなって強度等が低下す
る。15重量％を越えるとガラスの流動性が損なわれる。Al 2 O 3 is added to stabilize the glass. If the blending amount is less than 1% by weight, devitrification is likely to occur, the reaction between the element body and the glass is difficult to occur uniformly, and the strength and the like decrease. If it exceeds 15% by weight, the fluidity of glass is impaired.
PbOは0.5重量％より少ないとガラス化が困難であり、
又12重量％を越えると軟化温度が低下し、流動性が大き
くなりすぎて使用に適さない。特にガラス成分にBaO、C
aOが含まれない場合は0.5〜９重量％の範囲が好適であ
る。If PbO is less than 0.5% by weight, vitrification is difficult,
On the other hand, if it exceeds 12% by weight, the softening temperature is lowered and the fluidity becomes too large, which is not suitable for use. Especially for glass components BaO, C
When aO is not contained, the range of 0.5 to 9% by weight is suitable.
BaO、CaOは必ずしも配合されなくてもよいが、上記の
硼珪酸鉛−亜鉛−アルミニウムガラスガラスに添加する
ことによって接合強度が更に改善されるとともに、膜密
度が大きくなるので膜へのメッキ液の滲込みが防止さ
れ、信頼性が向上する。BaO、CaOの合計量が２重量％よ
り少ないとこれらの特性改善にあまり効果がなく、28重
量％を越えると前述の反応層の形成が困難になり、クラ
ックの発生が多くなる。BaO, CaO may not necessarily be blended, but by adding to the above-mentioned lead borosilicate-zinc-aluminum glass glass, the bonding strength is further improved, and the film density increases, so that the plating solution Seepage is prevented and reliability is improved. If the total amount of BaO and CaO is less than 2% by weight, there is little effect on the improvement of these characteristics, and if it exceeds 28% by weight, it becomes difficult to form the above reaction layer and cracks increase.
ガラス質フリットとしては単一のガラス質フリットを
使用してもよいが、２種以上のフリットの混合物で、各
成分酸化物の合計が前記の比率となるものを用いてもよ
い。A single vitreous frit may be used as the vitreous frit, but a mixture of two or more types of frit in which the sum of the component oxides is in the above ratio may be used.
本発明にはガラス質フリットの他に、無機結合剤とし
て通常使用される酸化ビスマス、酸化銅、酸化亜鉛等の
添加剤を併用してもよい。In the present invention, in addition to the glassy frit, additives such as bismuth oxide, copper oxide, and zinc oxide which are commonly used as an inorganic binder may be used in combination.
導電性粉末としては銀、パラジウム、白金、金などの
貴金属や、これらの合金或いは混合物が使用される。As the conductive powder, a noble metal such as silver, palladium, platinum, gold, etc., or an alloy or mixture thereof is used.
有機ビヒクルは特に制限はなく、通常この種の導電性
組成物に使用されるものでよい。The organic vehicle is not particularly limited and may be one normally used in this type of conductive composition.
導電性粉末とガラス質フリットの比率は、導電性粉末
100重量部に対してガラス質フリット0.2〜20重量部の範
囲で使用される。これより少ないと電極の接合強度が充
分でなく、多すぎると電極の表層部に存在するガラスが
多くなるために、均一なメッキ膜の形成が困難になるの
で望ましくない。又有機ビヒクルは導電性粉末100重量
部に対し10〜40重量部程度が適当である。The ratio of conductive powder to vitreous frit is
It is used in the range of 0.2 to 20 parts by weight of glassy frit per 100 parts by weight. If it is less than this, the bonding strength of the electrode is not sufficient, and if it is too large, the amount of glass present in the surface layer portion of the electrode increases, and it becomes difficult to form a uniform plated film, which is not desirable. Further, it is suitable that the organic vehicle is 10 to 40 parts by weight with respect to 100 parts by weight of the conductive powder.
本発明の導電性組成物は、特にBaTiO3系の積層コンデ
ンサに対して特に効果が大きいが、TiO2系その他の積層
コンデンサや、単板形のコンデンサの端子電極形成用に
も用いることができるのはもちろんである。更にメッキ
を行わず直接半田付けするタイプの端子電極にも使用す
ることができる。The conductive composition of the present invention is particularly effective for BaTiO 3 -based multilayer capacitors, but can also be used for forming terminal electrodes of TiO 2 -based and other multilayer capacitors and single-plate capacitors. Of course. Further, it can be used for a terminal electrode of a type which is directly soldered without plating.
実施例 実施例１ 銀粉末100重量部に対して下記組成のガラス質フリッ
ト６重量部と、有機ビヒクルとしてエチルセルロースの
テルピネオール溶液30重量部を混合し、ペースト状の導
電性組成物を得た。Example 1 6 parts by weight of a glass frit having the following composition and 30 parts by weight of a terpineol solution of ethyl cellulose as an organic vehicle were mixed with 100 parts by weight of silver powder to obtain a paste-like conductive composition.
B2O3 29重量％ ZnO 49重量％ SiO2 ８重量％ Al2O3 ２重量％ PbO 12重量％ このペーストを、内部電極にパラジウムを用いたBaTi
O3系積層セラミックコンデンサ（層数30層）の端子部即
ち内部電極端部の露出した側面に塗布し、150℃で10分
間乾燥した後、最高温度800℃で焼成し、端子電極被膜
を形成した。B 2 O 3 29% by weight ZnO 49% by weight SiO 2 8% by weight Al 2 O 3 2% by weight PbO 12% by weight This paste was mixed with BaTi using palladium for internal electrodes.
Apply to the exposed side of the terminal part of the O 3 -based monolithic ceramic capacitor (30 layers), that is, the exposed end of the internal electrode, dry at 150 ° C for 10 minutes, and then bake at a maximum temperature of 800 ° C to form a terminal electrode film. did.
次いで端子部にニッケル及び錫を順次電解メッキし
た。メッキ処理の前後で電極とセラミック素体間の接合
強度を測定したところ、それぞれ4.1kg、3.9kgであっ
た。Next, nickel and tin were sequentially electrolytically plated on the terminals. When the bonding strength between the electrode and the ceramic body was measured before and after the plating treatment, they were 4.1 kg and 3.9 kg, respectively.
又メッキ処理したコンデンサを300℃の錫／鉛共晶半
田浴に１秒間浸漬し、その後、光学顕微鏡でセラミック
素体を観察したところ、クラックの発生は見られなかっ
た。半田の付着性は極めて良好であった。When the plated capacitor was immersed in a tin / lead eutectic solder bath at 300 ° C. for 1 second and then the ceramic body was observed with an optical microscope, no cracks were found. The adhesion of the solder was very good.
実施例２〜７ 表１に示したガラス質フリットを使用する以外は実施
例１と同様にして、端子電極を形成した。同様にメッキ
前後の接合強度及びクラックの発生状況、半田付性、膜
密度を調べ、結果を表１に併せて示した。Examples 2 to 7 Terminal electrodes were formed in the same manner as in Example 1 except that the glassy frit shown in Table 1 was used. Similarly, the bonding strength before and after plating, the occurrence of cracks, solderability, and film density were examined, and the results are also shown in Table 1.
尚、表１において半田付性は、試料10個中、半田がは
じかれ均一に付着しなかったものの個数で示した。膜密
度は顕微鏡写真により判定し、実施例１の焼成膜を基準
にして、ほぼ同等のものは○、より緻密なものは◎とし
た。In Table 1, the solderability is shown by the number of 10 samples which were repelled and did not adhere uniformly. The film density was judged by a micrograph, and based on the baked film of Example 1, a film having almost the same quality was marked with ◯, and a film having higher density was marked with ⊚.
比較例１〜５ 表１に示した組成のガラス質フリットを使用する以外
は実施例と同様にして、端子電極を形成し、接合強度、
クラックの発生、半田付性及び膜密度を調べた。結果を
表１に併せて示した。Comparative Examples 1 to 5 Terminal electrodes were formed in the same manner as in Examples except that the glass frit having the composition shown in Table 1 was used, and the bonding strength,
The generation of cracks, solderability and film density were examined. The results are also shown in Table 1.
表１から明らかなように、本発明の組成物ではクラッ
クが全く発生せず、接合強度、半田付性及び膜密度とも
に優れているが、本発明外の組成のガラスを用いるもの
では、比較例１〜３、５では多数のクラックが発生し
た。比較例４、５では、半田濡れ性が悪いが、これは電
極膜にガラスが多く存在し、ニッケルメッキが均一に付
着しないためと考えられる。また比較例１、３〜５では
強度も弱い。尚、ガラスにBaO、CaOを含む実施例５〜７
では膜密度が非常に優れていた。 As is clear from Table 1, in the composition of the present invention, cracks were not generated at all, and the bonding strength, solderability and film density were excellent. In 1 to 3, many cracks were generated. In Comparative Examples 4 and 5, the solder wettability is poor, which is considered to be because the electrode film contains a large amount of glass and the nickel plating does not adhere uniformly. Further, in Comparative Examples 1 and 3 to 5, the strength is weak. Incidentally, Examples 5 to 7 in which glass contains BaO and CaO
The film density was very good in.
実施例８ 銀粉末100重量部、実施例６と同一組成のガラス質フ
リット３重量部及びBi2O3粉末５重量部をエチルセルロ
ースのテルピネオール溶液30重量部に混合分散し、ペー
スト状の導電性組成物を得た。このペーストを、BaTiO3
系積層セラミックコンデンサの端子部に塗布し、乾燥
後、最高温度750℃で焼成し、端子電極被膜を形成し
た。メッキ処理を行わない端子の接合強度は5.2kgであ
り、優れた密着性を示した。又半田付性は良好であっ
た。Example 8 100 parts by weight of silver powder, 3 parts by weight of glassy frit having the same composition as in Example 6 and 5 parts by weight of Bi 2 O 3 powder were mixed and dispersed in 30 parts by weight of a terpineol solution of ethyl cellulose to form a paste-like conductive composition. I got a thing. Add this paste to BaTiO 3
It was applied to the terminal portion of a system-type multilayer ceramic capacitor, dried, and then fired at a maximum temperature of 750 ° C. to form a terminal electrode coating film. The joint strength of the non-plated terminal was 5.2 kg, indicating excellent adhesion. The solderability was good.
発明の効果 本発明の特定組成のガラスを無機結合剤として使用す
る電極用組成物により、コンデンサ素体との接合強度が
強く、電解メッキにも耐える優れた端子電極が形成さ
れ、かつ実装時の半田付に際してのサーマルショックや
その他の機械的衝撃によるクラックの発生のない、信頼
性が極めて高いセラミックコンデンサを得ることができ
る。Effects of the Invention The composition for electrodes using the glass of the specific composition of the present invention as the inorganic binder, has a strong bonding strength with the capacitor element body, and an excellent terminal electrode that can withstand electrolytic plating is formed, and at the time of mounting. It is possible to obtain a highly reliable ceramic capacitor which is free from cracks due to thermal shock or other mechanical shocks during soldering.
フロントページの続き (72)発明者 能勢 直樹 東京都青梅市末広町２丁目９番地３ 昭栄 化学工業株式会社内 (72)発明者 真島 浩 東京都青梅市末広町２丁目９番地３ 昭栄 化学工業株式会社内Front Page Continuation (72) Inventor Naoki Nose 2-9-3 Suehiro-cho, Ome-shi, Tokyo Within Shoei Chemical Industry Co., Ltd. (72) Inventor Hiroshi Mashima 2-9-3 Suehiro-cho, Ome-shi, Tokyo Shoei Chemical Industry Co., Ltd. In the company
Claims (3)
る各元素の合計が酸化物換算でそれぞれ下記比率となる
ような１種又は２種以上のガラス質フリット0.2〜20重
量部とを、有機ビヒクルに分散させてなるセラミックコ
ンデンサ端子電極用導電性組成物。 B2O3 15〜35重量％ ZnO 35〜60重量％ SiO2 １〜15重量％ Al2O3 １〜15重量％ PbO 0.5〜12重量％1. A noble metal powder of 100 parts by weight and 0.2 to 20 parts by weight of one or more kinds of glassy frit such that the total of each element constituting glass has the following ratio in terms of oxide. A conductive composition for a ceramic capacitor terminal electrode, which is dispersed in an organic vehicle. B 2 O 3 15-35 wt% ZnO 35-60 wt% SiO 2 1-15 wt% Al 2 O 3 1-15 wt% PbO 0.5-12 wt%
る各元素の合計が酸化物換算でそれぞれ下記比率となる
ような１種又は２種以上のガラス質フリット0.2〜20重
量部とを、有機ビヒクルに分散させてなるセラミックコ
ンデンサ端子電極用導電性組成物。 B2O3 15〜35重量％ ZnO 35〜60重量％ SiO2 １〜15重量％ Al2O3 １〜15重量％ PbO 0.5〜12重量％ BaO及びCaOから選ばれる少なくとも１種 ２〜28重量％2. 100 parts by weight of noble metal powder and 0.2 to 20 parts by weight of one or more kinds of glassy frit such that the total of each element constituting the glass has the following ratio in terms of oxide. A conductive composition for a ceramic capacitor terminal electrode, which is dispersed in an organic vehicle. At least one 2 to 28 weight selected from B 2 O 3 15 to 35 wt% ZnO 35 to 60 wt% SiO 2 1 to 15 wt% Al 2 O 3 1~15 wt% PbO 0.5 to 12 wt% BaO and CaO %
又は２記載のセラミックコンデンサ端子電極用導電性組
成物。3. A bismuth oxide powder is further added.
Or the conductive composition for a ceramic capacitor terminal electrode according to 2 above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18895888A JPH0817141B2 (en) | 1988-07-28 | 1988-07-28 | Conductive composition for ceramic capacitor terminal electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18895888A JPH0817141B2 (en) | 1988-07-28 | 1988-07-28 | Conductive composition for ceramic capacitor terminal electrodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0239411A JPH0239411A (en) | 1990-02-08 |
| JPH0817141B2 true JPH0817141B2 (en) | 1996-02-21 |
Family
ID=16232905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18895888A Expired - Lifetime JPH0817141B2 (en) | 1988-07-28 | 1988-07-28 | Conductive composition for ceramic capacitor terminal electrodes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0817141B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07161223A (en) * | 1993-12-10 | 1995-06-23 | Murata Mfg Co Ltd | Conductive paste and multilayer ceramic capacitor |
| JP3152065B2 (en) * | 1994-06-20 | 2001-04-03 | 株式会社村田製作所 | Conductive paste and multilayer ceramic capacitors |
| JPH08148029A (en) * | 1994-11-24 | 1996-06-07 | Murata Mfg Co Ltd | Conductive paste and external electrode of electronic part formed by using this conductive paste |
| JP3908426B2 (en) | 1999-12-24 | 2007-04-25 | 日本碍子株式会社 | Ceramic capacitor electrode forming paste |
-
1988
- 1988-07-28 JP JP18895888A patent/JPH0817141B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0239411A (en) | 1990-02-08 |
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