JPH0834337B2 - 半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子の製造方法

Info

Publication number
JPH0834337B2
JPH0834337B2 JP2087714A JP8771490A JPH0834337B2 JP H0834337 B2 JPH0834337 B2 JP H0834337B2 JP 2087714 A JP2087714 A JP 2087714A JP 8771490 A JP8771490 A JP 8771490A JP H0834337 B2 JPH0834337 B2 JP H0834337B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
laser device
face
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2087714A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03285380A (ja
Inventor
修 山本
秀典 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2087714A priority Critical patent/JPH0834337B2/ja
Priority to EP91302860A priority patent/EP0450902B1/fr
Priority to US07/678,834 priority patent/US5180685A/en
Priority to DE69110726T priority patent/DE69110726T2/de
Publication of JPH03285380A publication Critical patent/JPH03285380A/ja
Publication of JPH0834337B2 publication Critical patent/JPH0834337B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2087714A 1990-04-02 1990-04-02 半導体レーザ素子の製造方法 Expired - Fee Related JPH0834337B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2087714A JPH0834337B2 (ja) 1990-04-02 1990-04-02 半導体レーザ素子の製造方法
EP91302860A EP0450902B1 (fr) 1990-04-02 1991-04-02 Méthode pour la production d'un laser à semi-conducteur
US07/678,834 US5180685A (en) 1990-04-02 1991-04-02 Method for the production of a semiconductor laser device
DE69110726T DE69110726T2 (de) 1990-04-02 1991-04-02 Verfahren zur Herstellung eines Halbleiterlasers.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2087714A JPH0834337B2 (ja) 1990-04-02 1990-04-02 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPH03285380A JPH03285380A (ja) 1991-12-16
JPH0834337B2 true JPH0834337B2 (ja) 1996-03-29

Family

ID=13922572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2087714A Expired - Fee Related JPH0834337B2 (ja) 1990-04-02 1990-04-02 半導体レーザ素子の製造方法

Country Status (4)

Country Link
US (1) US5180685A (fr)
EP (1) EP0450902B1 (fr)
JP (1) JPH0834337B2 (fr)
DE (1) DE69110726T2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260231A (en) * 1989-02-03 1993-11-09 Sharp Kabushiki Kaisha Method for the production of a semiconductor laser
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
DE19536434C2 (de) * 1995-09-29 2001-11-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
JPH09298339A (ja) * 1996-04-30 1997-11-18 Rohm Co Ltd 半導体レーザの製法
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10242557A (ja) * 1997-02-21 1998-09-11 Sony Corp 半導体発光装置の製造方法
JP3444536B2 (ja) * 1999-10-25 2003-09-08 松下電器産業株式会社 半導体レーザー素子の製造方法および劈開装置
JP2003023209A (ja) * 2001-07-06 2003-01-24 Furukawa Electric Co Ltd:The 半導体素子の製造方法および半導体素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
DE102011054954A1 (de) 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
US10732349B2 (en) 2016-02-08 2020-08-04 Skorpios Technologies, Inc. Broadband back mirror for a III-V chip in silicon photonics
EP3414609A4 (fr) * 2016-02-08 2020-02-19 Skorpios Technologies, Inc. Émetteur optique à haute vitesse doté d'un substrat de silicium
JP6939120B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6939119B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6911567B2 (ja) 2017-06-22 2021-07-28 住友電気工業株式会社 量子カスケード半導体レーザ
US10608412B2 (en) * 2017-06-19 2020-03-31 Sumitomo Electric Industries, Ltd. Quantum cascade laser, light emitting apparatus
US10476237B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476235B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10404038B2 (en) * 2017-06-22 2019-09-03 Sumitomo Electric Industries, Ltd. Quantum cascade laser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527474A (en) * 1978-08-19 1980-02-27 Arata Kogyosho:Kk Manufacture of spherical head for use of oiler or the like of diesel engine
JPS5766688A (en) * 1980-10-14 1982-04-22 Fujitsu Ltd Manufacture of semiconductor laser element
JPS57170585A (en) * 1981-04-14 1982-10-20 Nec Corp Semiconductor laser device
JPS5844787A (ja) * 1981-09-11 1983-03-15 Sanyo Electric Co Ltd 半導体レ−ザ
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
JPS59121989A (ja) * 1982-12-28 1984-07-14 Nec Corp 半導体レ−ザ
JPS59181082A (ja) * 1983-03-30 1984-10-15 Nec Corp 半導体レ−ザとその製造方法
JPS603182A (ja) * 1983-06-21 1985-01-09 Mitsubishi Electric Corp 半導体レ−ザ素子の製造方法
JPS60113983A (ja) * 1983-11-26 1985-06-20 Mitsubishi Electric Corp 半導体発光装置およびその製造方法
JPH0716077B2 (ja) * 1985-10-11 1995-02-22 三菱電機株式会社 半導体レーザ装置の製造方法
JPH07109924B2 (ja) * 1989-03-13 1995-11-22 シャープ株式会社 半導体レーザ装置及びその製造方法

Also Published As

Publication number Publication date
US5180685A (en) 1993-01-19
EP0450902A3 (en) 1992-02-12
EP0450902B1 (fr) 1995-06-28
DE69110726T2 (de) 1996-07-18
DE69110726D1 (de) 1995-08-03
JPH03285380A (ja) 1991-12-16
EP0450902A2 (fr) 1991-10-09

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