JPH08958B2 - Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element - Google Patents

Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element

Info

Publication number
JPH08958B2
JPH08958B2 JP60231881A JP23188185A JPH08958B2 JP H08958 B2 JPH08958 B2 JP H08958B2 JP 60231881 A JP60231881 A JP 60231881A JP 23188185 A JP23188185 A JP 23188185A JP H08958 B2 JPH08958 B2 JP H08958B2
Authority
JP
Japan
Prior art keywords
heat treatment
wire
bonding
manufacturing
copper wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60231881A
Other languages
Japanese (ja)
Other versions
JPS6289853A (en
Inventor
康夫 福井
保彦 吉永
信次 白川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP60231881A priority Critical patent/JPH08958B2/en
Publication of JPS6289853A publication Critical patent/JPS6289853A/en
Publication of JPH08958B2 publication Critical patent/JPH08958B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01551Changing the shapes of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本願は、シリコンチップ電極と外部リード部とを接続
するために使用するボンディング用仕上熱処理銅線の製
造方法に関するものである。
Description: TECHNICAL FIELD The present application relates to a method for manufacturing a finish heat-treated copper wire for bonding, which is used for connecting a silicon chip electrode and an external lead portion.

(従来の技術とその問題点) 従来はボンディング用線として、もっぱら金(Au)線
或いはアルミニウム(Al)線が使用されているが、最近
金線の代替として経済性に有利な銅線の使用が試みられ
ている。
(Prior art and its problems) Conventionally, gold (Au) wire or aluminum (Al) wire has been mainly used as the bonding wire, but recently, the use of copper wire, which is economically advantageous, as a substitute for the gold wire. Is being attempted.

しかし、一般に使用されている銅線の純度は99.9〜9
9.99wt%迄であり、金線に比べて引張強度は大きいもの
の硬すぎるためにチップ割れ及びネック切れ等を生じる
原因となっていた。
However, the purity of commonly used copper wire is 99.9-9
It is up to 9.99 wt% and has a higher tensile strength than a gold wire, but is too hard, which causes chip cracking and neck breakage.

そこで、銅線の純度を上げることが考えられるが、単
に銅(Cu)線の純度を上げただけでは、ボンディング用
線としては必要な所定の抗張力及び伸び率が得られな
い。
Therefore, it is conceivable to increase the purity of the copper wire, but merely increasing the purity of the copper (Cu) wire cannot obtain the predetermined tensile strength and elongation required for the bonding wire.

すなわち、抗張力が過大、伸び率が過少の場合は、銅
線が硬くなり第2ボンディング(リード側のボンディン
グ)の接着不良の原因となり、又伸び率が過大の場合は
ループ不安定及びテール残りの原因となると共に機械的
強度に劣るという問題があった。
That is, if the tensile strength is too high and the elongation is too low, the copper wire becomes hard and causes defective adhesion of the second bonding (bonding on the lead side). There was a problem that it was a cause and was inferior in mechanical strength.

(発明が解決しようとする技術的課題) 以上の問題を解決しようとする本発明の技術的課題
は、銅線の製造工程に於いて99.999wt%以上の高純度銅
を一方向凝固となるように処理し加工率と熱処理とを適
性に行うことにより、一定の抗張力、伸び率及び優れた
機械的特性を持った銅線を得ることである。
(Technical problem to be solved by the invention) The technical problem to be solved by the present invention is to unidirectionally solidify 99.999 wt% or more of high-purity copper in the copper wire manufacturing process. By appropriately performing the processing rate and the heat treatment, it is possible to obtain a copper wire having a constant tensile strength, elongation and excellent mechanical properties.

(技術的課題を達成するための技術的手段) 以上の技術的課題を達成するための本発明の技術的手
段は、99.999wt%以上の高純度銅を一方向凝固となるよ
うに処理し、それを中間加工率が99%以上となるように
線引加工を行った後、中間熱処理を100〜300℃で行い、
然る後、仕上加工率が80〜95%となるように線引加工を
行い、仕上熱処理を100〜300℃で行うことである。99.9
99wt%以上の高純度銅を一方向凝固となるように処理し
ない時は初期の特性が得られず、99.999wt%以上の高純
度銅を一方向凝固となるように処理した場合でも前記中
間加工率が99%未満だと、中間熱処理工程を経ても所期
の特性が得られず、また中間熱処理が100℃未満、300℃
を越えると前記と同様に所期の特性が得られない。
(Technical means for achieving the technical problem) The technical means of the present invention for achieving the above technical problems, 99.999 wt% or more of high-purity copper is processed to be unidirectionally solidified, After performing wire drawing processing so that the intermediate processing rate will be 99% or more, intermediate heat treatment is performed at 100 to 300 ° C,
After that, wire drawing is performed so that the finish processing rate is 80 to 95%, and the finish heat treatment is performed at 100 to 300 ° C. 99.9
The initial characteristics cannot be obtained unless 99% by weight or more of high-purity copper is processed so that it is unidirectionally solidified. If the rate is less than 99%, the desired characteristics cannot be obtained even after the intermediate heat treatment process, and the intermediate heat treatment is less than 100 ° C and 300 ° C.
If it exceeds, the desired characteristics cannot be obtained as in the above case.

更に、仕上加工率が80%未満、95%以上だと仕上熱処
理後に所定の抗張力及び伸び率が得られない。また、仕
上熱処理が100℃未満、300℃を越える場合も所期の機械
的特性が得られない。
Further, if the finish processing ratio is less than 80% and 95% or more, the predetermined tensile strength and elongation cannot be obtained after the finish heat treatment. Further, if the finish heat treatment is less than 100 ° C or more than 300 ° C, desired mechanical properties cannot be obtained.

(発明の効果) 本発明は以上の様な製造方法により銅細線の製造工程
に於いて20〜32kgf/mm2の抗張力及び16〜28%の伸び率
を持たせることができるのでループ形状の安定化、ボン
ディング後の接着強度の強化及び引張強さの強化等のボ
ンディング特性の向上を図ることができる。
(Effect of the invention) The present invention can provide a tensile strength of 20 to 32 kgf / mm 2 and an elongation of 16 to 28% in the manufacturing process of a copper thin wire by the above manufacturing method, so that the loop shape is stable. It is possible to improve bonding characteristics such as improvement in adhesive strength after bonding and tensile strength.

(実施例) 本発明の実施例は、電解精製を2回、帯溶解精製を5
回行うことによって得た99.9995wt%の銅を酸化やガス
吸蔵を防止するため真空中で高周波溶解し、一方向凝固
となるように直径20mmの鋳塊に鋳造した。
(Example) In the example of the present invention, electrolytic refining is performed twice, and zone dissolution refining is performed five times.
The copper of 99.9995 wt% obtained by repeating the process was subjected to high frequency melting in a vacuum to prevent oxidation and gas occlusion, and cast into a 20 mm diameter ingot so as to be directionally solidified.

その後、この鋳塊を中間加工率99%以上となるように
線加工と中間熱処理(真空中に於いて200℃で1時間)
を繰返し、線径0.1mmの線をつくった。
After that, this ingot is subjected to wire processing and intermediate heat treatment (in vacuum, at 200 ° C for 1 hour) so that the intermediate processing rate is 99% or more.
Was repeated to make a wire with a diameter of 0.1 mm.

更に線径30μmまで線引加工し(仕上加工率91%)、
最終処理として仕上熱処理(真空中に於いて200℃で1
時間)を行ない、所定の極細線に加工した。次表
(1),(2),(3)は99.9995wt%、99.9999wt%、
99.99995wt%の純度で本発明の製造方法によって製造さ
れた線径30μmの銅線の抗張力及び伸び率の試験結果を
示したものである。
Furthermore, wire drawing is performed up to a wire diameter of 30 μm (finishing rate 91%),
Final heat treatment as final treatment (1 at 200 ° C in vacuum)
Time) and processed into a predetermined ultrafine wire. The following table (1), (2), (3) shows 99.9995wt%, 99.9999wt%,
2 shows the test results of tensile strength and elongation of a copper wire having a wire diameter of 30 μm manufactured by the manufacturing method of the present invention with a purity of 99.99995 wt%.

また、表(4),(5),(6)は前記製造方法によ
り製造された抗張力20〜32kgf/mm2、伸び率16〜28%を
有する銅線のボンディング特性の試験結果を示したもの
である。
Tables (4), (5) and (6) show the test results of the bonding characteristics of the copper wire having the tensile strength of 20 to 32 kgf / mm 2 and the elongation of 16 to 28% manufactured by the above manufacturing method. Is.

表(7)は、一方向凝固に変えて普通の凝固となるよ
うに処理した事以外は実施例と同様にして極細線に加工
した銅線の抗張力及び伸び率の試験結果を示したもので
ある。
Table (7) shows the test results of the tensile strength and elongation of the copper wire processed into an ultrafine wire in the same manner as in the Example except that the unidirectional solidification was changed to the normal solidification. is there.

この結果、以上の表(1)〜(6)から明らかなよう
に本発明の製造によって99.999wt%以上の高純度銅を20
〜32kgf/mm2の抗張力及び16〜28%の伸び率を持った銅
細線を製造することができるのでループ形状の安定化、
ボンディング後の接着強度の強化及び引張り強さの強化
等のボンディング特性の向上を図ることができるという
本発明の効果を確認することができた。
As a result, as is clear from the above Tables (1) to (6), high purity copper of 99.999 wt% or more was produced by the production of the present invention.
Stabilization of loop shape because it is possible to manufacture copper thin wire with tensile strength of ~ 32 kgf / mm 2 and elongation of 16 to 28%,
It was possible to confirm the effect of the present invention that it is possible to improve the bonding characteristics such as the enhancement of the adhesive strength after the bonding and the enhancement of the tensile strength.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−20858(JP,A) 特開 昭60−125357(JP,A) 特開 昭60−125358(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP 62-20858 (JP, A) JP 60-125357 (JP, A) JP 60-125358 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】99.999wt%以上の高純度銅を一方向凝固と
なるように処理し、それを中間加工率が99%以上となる
ように線引加工を行った後、中間熱処理を100〜300℃で
行い、然る後、仕上加工率が80〜95%となるように線引
加工を行い、仕上熱処理を100〜300℃で行うことを特徴
とする半導体素子のボンディング用仕上熱処理銅線の製
造方法。
1. A high-purity copper of 99.999 wt% or more is processed so as to be unidirectionally solidified, and wire drawing is performed so that the intermediate processing rate is 99% or more, and then an intermediate heat treatment is performed for 100 to 100%. Finished heat-treated copper wire for bonding of semiconductor elements, characterized in that it is carried out at 300 ° C., after which wire drawing is carried out so that the finishing processing rate is 80-95%, and finishing heat treatment is carried out at 100-300 ° C. Manufacturing method.
JP60231881A 1985-10-16 1985-10-16 Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element Expired - Fee Related JPH08958B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60231881A JPH08958B2 (en) 1985-10-16 1985-10-16 Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60231881A JPH08958B2 (en) 1985-10-16 1985-10-16 Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element

Publications (2)

Publication Number Publication Date
JPS6289853A JPS6289853A (en) 1987-04-24
JPH08958B2 true JPH08958B2 (en) 1996-01-10

Family

ID=16930484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60231881A Expired - Fee Related JPH08958B2 (en) 1985-10-16 1985-10-16 Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element

Country Status (1)

Country Link
JP (1) JPH08958B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617554B2 (en) * 1986-09-16 1994-03-09 タツタ電線株式会社 Method for manufacturing fine copper wire with excellent ultrasonic bondability
JPS644444A (en) * 1987-06-26 1989-01-09 Nippon Mining Co Copper wire for sound and its production
US6197134B1 (en) 1997-01-08 2001-03-06 Dowa Mining Co., Ltd. Processes for producing fcc metals
CN105568193B (en) * 2016-01-12 2017-05-17 天津理工大学 Method for machining high-strength copper wire

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0694587B2 (en) * 1983-12-10 1994-11-24 住友電気工業株式会社 Method for manufacturing conductor for image display device and audio device
JPH0715138B2 (en) * 1983-12-10 1995-02-22 住友電気工業株式会社 Method for manufacturing conductors for image display equipment and audio equipment
JPS6220858A (en) * 1985-07-19 1987-01-29 Hitachi Ltd Bonding wire, its production and semiconductor device using said wire

Also Published As

Publication number Publication date
JPS6289853A (en) 1987-04-24

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